INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=2.1V,@Vge=15V,Ic=25A)

ShortCircuitRatedUltraFastIGBT Features •ShortCircuitRatedUltraFast:Optimizedforhighoperatingfrequencies>5.0kHz,andShortCircuitRatedto10µs@125°C,VGE=15V •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •IGBT

FitRate/EquivalentDeviceHours

文件：98.39 Kbytes Page：35 Pages

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.32V,@Vge=15V,Ic=31A)

StandardSpeedIGBT Features •Standard:Optimizedforminimumsaturationvoltageandlowoperatingfrequencies(

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

封装/外壳：TO-247-3 包装：管件 描述：IGBT 600V 42A 160W TO247AC 分立半导体产品 晶体管 - UGBT、MOSFET - 单

封装/外壳：TO-247-3 包装：卷带（TR） 描述：IGBT 600V 42A 160W TO247AC 分立半导体产品 晶体管 - UGBT、MOSFET - 单

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

文件：326.65 Kbytes Page：11 Pages

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

文件：326.65 Kbytes Page：11 Pages

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.1.72V,@Vge=15V,Ic=20A)

Benefits •Generation4IGBTsofferhighestefficiencyavailable •IGBTsoptimizedforspecifiedapplicationconditions •Designedtobeadrop-inreplacementforequivalent industry-standardGeneration3IRIGBTs Features •UltraFast:Optimizedforhighoperating frequencies8-40kHz

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.05V,@Vge=15V,Ic=20A)

Benefits •Lowerswitchinglossesallowmorecost-effective operationthanpowerMOSFETsupto150kHz (hardswitchedmode) •Ofparticularbenefittosingle-endedconvertersand boostPFCtopologies150Wandhigher •Lowconductionlossesandminimalminority-carrier recombinat

InsulatedGateBipolarTransistor

文件：395.49 Kbytes Page：10 Pages

InsulatedGateBipolarTransistor

文件：1.2552 Mbytes Page：9 Pages