INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

文件：217.89 Kbytes Page：12 Pages

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.10V,@Vge=15V,Ic=2.0A)

文件：217.3 Kbytes Page：12 Pages

封装/外壳：TO-262-3，长引线，I²Pak，TO-262AA 包装：管件 描述：IGBT 600V 14A 38W TO262 分立半导体产品 晶体管 - UGBT、MOSFET - 单

封装/外壳：TO-262-3，长引线，I²Pak，TO-262AA 包装：管件 描述：IGBT 600V 14A 38W TO262 分立半导体产品 晶体管 - UGBT、MOSFET - 单

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

文件：313.31 Kbytes Page：12 Pages

ShortCircuitRatedUltraFastIGBT

ShortCircuitRatedUltraFastIGBT Features •ShortCircuitRatedUltraFast:Optimizedforhighoperatingfrequencies>5.0kHz,andShortCircuitRatedto10µs@125°C,VGE=15V •Generation4IGBTdesignprovideshigherefficiencythanGeneration3 •IndustrystandardTO-220ABpackage Bene

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.2.39V,@Vge=15V,Ic=5.0A)

ShortCircuitRatedUltraFastIGBT Features •Highshortcircuitratingoptimizedformotorcontrol,tsc=10µs,@360VVCE(start),TJ=125°C,VGE=15V •Combineslowconductionlosseswithhighswitchingspeed •Tighterparameterdistributionandhigherefficiencythanpreviousgenerations

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features •Highshortcircuitratingoptimizedformotorcontrol, tsc=10µs,@360VVCE(start),TJ=125°C, VGE=15V •Combineslowconductionlosseswithhigh switchingspeed •Tighterparameterdistributionandhigherefficiency thanpreviousgenerations •IGBTco-packagedw

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

ShortCircuitRatedUltraFastIGBT Features •Highshortcircuitratingoptimizedformotorcontrol,tsc=10µs,@360VVCE(start),TJ=125°C,VGE=15V •Combineslowconductionlosseswithhighswitchingspeed •Tighterparameterdistributionandhigherefficiencythanpreviousgenerations

Highshortcircuitratingoptimizedformotorcontrol

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