IRFU420价格

参考价格:¥4.5624

型号:IRFU420APBF 品牌:VISHAY 备注:这里有IRFU420多少钱,2024年最近7天走势,今日出价,今日竞价,IRFU420批发/采购报价,IRFU420行情走势销售排行榜,IRFU420报价。
型号 功能描述 生产厂家&企业 LOGO 操作
IRFU420

PowerMOSFET(Vdss=500V,Rds(on)=3.0ohm,Id=2.4A)

Description ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheD-PAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thes

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRFU420

2.5A,500V,3.000Ohm,N-ChannelPowerMOSFETs

2.5A,500V,3.000Ohm,N-ChannelPowerMOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.Allofthesepow

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil
IRFU420

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

VishayVishay Siliconix

威世科技

Vishay
IRFU420

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI
IRFU420

DynamicdV/dtRating

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI
IRFU420

iscN-ChannelMOSFETTransistor

DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneralpurposeapplications. FEATURES •DrainCurrent–ID=2.4A@TC=25℃ •DrainSourceVoltage-:VDSS=500V(Min) •StaticDrain-SourceOn-Resistance:RDS(on)=3.0Ω(Max) •100avalanchetested •MinimumLot-to-Lotvariation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
IRFU420

PowerMOSFET

FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Surface-mount(IRFR420,SiHFR420) •Straightlead(IRFU420,SiHFU420) •Availableintapeandreel •Fastswitching •Easeofparalleling •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?9

VishayVishay Siliconix

威世科技

Vishay
IRFU420

DynamicdV/dtRating

文件:4.27854 Mbytes Page:7 Pages

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

PowerMOSFET

FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS)

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowe

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

SMPSMOSFET

HEXFET®PowerMOSFET Applications •SwitchModePowerSupply(SMPS) •UninterruptiblePowerSupply •Highspeedpowerswitching Benefits •LowGateChargeQgresultsinSimpleDriveRequirement •ImprovedGate,Avalancheanddynamicdv/dtRuggedness •FullyCharacterize

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

PowerMOSFET

FEATURES •LowgateChargeQgresultsinsimpledrive requirement •Improvedgate,avalancheanddynamicdV/dt ruggedness •Fullycharacterizedcapacitanceand avalanchevoltageandcurrent •EffectiveCossspecified •Materialcategorization:fordefinitionsofcompliance pleaseseewww.

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowe

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

PowerMOSFET

FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS)

VishayVishay Siliconix

威世科技

Vishay

HEXFETPowerMOSFET(VDSS=500V,RDS(on)max=3.0廓,ID=3.3A)

SMPSMOSFET Benefits •LowGateChargeQgresultsinSimpleDriveRequirement •ImprovedGate,Avalancheanddynamicdv/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCOSSspecified(SeeAN1001) Applications •SwitchModePowerSupply(SMPS)

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

500VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

500VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

DynamicdV/dtRating

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

PowerMOSFET

FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Surface-mount(IRFR420,SiHFR420) •Straightlead(IRFU420,SiHFU420) •Availableintapeandreel •Fastswitching •Easeofparalleling •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?9

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

文件:2.68622 Mbytes Page:7 Pages

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

iscN-ChannelMOSFETTransistor

文件:345.43 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

PowerMOSFET

文件:2.68622 Mbytes Page:7 Pages

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

PowerMOSFET

文件:267.92 Kbytes Page:13 Pages

VishayVishay Siliconix

威世科技

Vishay

DynamicdV/dtRating

文件:4.27854 Mbytes Page:7 Pages

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

HEXFETPOWERMOSFET(VDSS=500V,RDS(on)=3.0廓,ID=2.4A)

文件:857.33 Kbytes Page:10 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

NPNSiliconRFTransistor

DESCRIPTION TheSTART420isamemberoftheSTARTfamilythatprovidemarketwiththestateoftheartofRFsiliconprocess.ManufacturatedinthethirdgenerationofSTproprietarybipolarprocess,itoffersthebestmixofgainandNFforgivenbreakdownvoltage(BVceo). Itreachesperform

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

SURFACEMOUNTFUSES

Features •Heatresistantceramichousing •Forlineorlowvoltageapplications •Lowvoltagedrop •Internationallyapproved •Highpulseresistance •Alsoavailableasholdersystem425withmountedfuse420

LittelfuseLittelfuse Inc.

力特力特公司

Littelfuse

SupportingtheIntelCeleronprocessor

文件:1.3709 Mbytes Page:100 Pages

IntelIntel Corporation(Integrated Electronics Corporation)

英特尔英特尔(集成电子公司)

Intel

CeleronMProcessoron65nmProcess

文件:1.93023 Mbytes Page:71 Pages

IntelIntel Corporation(Integrated Electronics Corporation)

英特尔英特尔(集成电子公司)

Intel

420LEDwire-to-boardconnector

文件:307.61 Kbytes Page:1 Pages

DBLECTRODB Lectro Inc

迪贝电子迪贝电子(上海)有限公司

DBLECTRO

IRFU420产品属性

  • 类型

    描述

  • 型号

    IRFU420

  • 功能描述

    MOSFET N-Chan 500V 2.4 Amp

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2024-5-3 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Infineon/英飞凌
21+
TO-251(I-PAK)
6000
原装现货正品
FAIRCHILD/仙童
23+
NA/
25162
原装现货,当天可交货,原型号开票
IR
2016+
TO251
1000
只做原装,假一罚十,公司可开17%增值税发票!
IR
2020+
TO-251
8000
只做自己库存,全新原装进口正品假一赔百,可开13%增
ir
22+
500000
行业低价,代理渠道
IR
2020+
TO-251
16800
绝对原装进口现货,假一赔十,价格优势!?
VISHAY/威世
22+
100000
代理渠道/只做原装/可含税
FAIRCHILD
23+
TO-251
9526
HARRIS(哈利斯)
23+
TO251AA
6000
VISHAY/威世
24+
TO-251
860000
明嘉莱只做原装正品现货

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