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IRFU420价格
参考价格:¥4.5624
型号:IRFU420APBF 品牌:VISHAY 备注:这里有IRFU420多少钱,2024年最近7天走势,今日出价,今日竞价,IRFU420批发/采购报价,IRFU420行情走势销售排行榜,IRFU420报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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IRFU420 | PowerMOSFET(Vdss=500V,Rds(on)=3.0ohm,Id=2.4A) Description ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheD-PAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thes | IRFInternational Rectifier 英飞凌英飞凌科技公司 | ||
IRFU420 | 2.5A,500V,3.000Ohm,N-ChannelPowerMOSFETs 2.5A,500V,3.000Ohm,N-ChannelPowerMOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.Allofthesepow | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | ||
IRFU420 | PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | VishayVishay Siliconix 威世科技 | ||
IRFU420 | PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | KERSEMI Kersemi Electronic Co., Ltd. | ||
IRFU420 | DynamicdV/dtRating DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | KERSEMI Kersemi Electronic Co., Ltd. | ||
IRFU420 | iscN-ChannelMOSFETTransistor DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneralpurposeapplications. FEATURES •DrainCurrent–ID=2.4A@TC=25℃ •DrainSourceVoltage-:VDSS=500V(Min) •StaticDrain-SourceOn-Resistance:RDS(on)=3.0Ω(Max) •100avalanchetested •MinimumLot-to-Lotvariation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ||
IRFU420 | PowerMOSFET FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Surface-mount(IRFR420,SiHFR420) •Straightlead(IRFU420,SiHFU420) •Availableintapeandreel •Fastswitching •Easeofparalleling •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?9 | VishayVishay Siliconix 威世科技 | ||
IRFU420 | DynamicdV/dtRating 文件:4.27854 Mbytes Page:7 Pages | KERSEMI Kersemi Electronic Co., Ltd. | ||
PowerMOSFET FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS) | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowe | KERSEMI Kersemi Electronic Co., Ltd. | |||
SMPSMOSFET HEXFET®PowerMOSFET Applications •SwitchModePowerSupply(SMPS) •UninterruptiblePowerSupply •Highspeedpowerswitching Benefits •LowGateChargeQgresultsinSimpleDriveRequirement •ImprovedGate,Avalancheanddynamicdv/dtRuggedness •FullyCharacterize | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
PowerMOSFET FEATURES •LowgateChargeQgresultsinsimpledrive requirement •Improvedgate,avalancheanddynamicdV/dt ruggedness •Fullycharacterizedcapacitanceand avalanchevoltageandcurrent •EffectiveCossspecified •Materialcategorization:fordefinitionsofcompliance pleaseseewww. | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowe | KERSEMI Kersemi Electronic Co., Ltd. | |||
PowerMOSFET FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS) | VishayVishay Siliconix 威世科技 | |||
HEXFETPowerMOSFET(VDSS=500V,RDS(on)max=3.0廓,ID=3.3A) SMPSMOSFET Benefits •LowGateChargeQgresultsinSimpleDriveRequirement •ImprovedGate,Avalancheanddynamicdv/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCOSSspecified(SeeAN1001) Applications •SwitchModePowerSupply(SMPS) | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
500VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
500VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
DynamicdV/dtRating DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | KERSEMI Kersemi Electronic Co., Ltd. | |||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | KERSEMI Kersemi Electronic Co., Ltd. | |||
PowerMOSFET FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Surface-mount(IRFR420,SiHFR420) •Straightlead(IRFU420,SiHFU420) •Availableintapeandreel •Fastswitching •Easeofparalleling •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?9 | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET 文件:2.68622 Mbytes Page:7 Pages | KERSEMI Kersemi Electronic Co., Ltd. | |||
iscN-ChannelMOSFETTransistor 文件:345.43 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
PowerMOSFET 文件:2.68622 Mbytes Page:7 Pages | KERSEMI Kersemi Electronic Co., Ltd. | |||
PowerMOSFET 文件:267.92 Kbytes Page:13 Pages | VishayVishay Siliconix 威世科技 | |||
DynamicdV/dtRating 文件:4.27854 Mbytes Page:7 Pages | KERSEMI Kersemi Electronic Co., Ltd. | |||
HEXFETPOWERMOSFET(VDSS=500V,RDS(on)=3.0廓,ID=2.4A) 文件:857.33 Kbytes Page:10 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
NPNSiliconRFTransistor DESCRIPTION TheSTART420isamemberoftheSTARTfamilythatprovidemarketwiththestateoftheartofRFsiliconprocess.ManufacturatedinthethirdgenerationofSTproprietarybipolarprocess,itoffersthebestmixofgainandNFforgivenbreakdownvoltage(BVceo). Itreachesperform | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
SURFACEMOUNTFUSES Features •Heatresistantceramichousing •Forlineorlowvoltageapplications •Lowvoltagedrop •Internationallyapproved •Highpulseresistance •Alsoavailableasholdersystem425withmountedfuse420 | LittelfuseLittelfuse Inc. 力特力特公司 | |||
SupportingtheIntelCeleronprocessor 文件:1.3709 Mbytes Page:100 Pages | IntelIntel Corporation(Integrated Electronics Corporation) 英特尔英特尔(集成电子公司) | |||
CeleronMProcessoron65nmProcess 文件:1.93023 Mbytes Page:71 Pages | IntelIntel Corporation(Integrated Electronics Corporation) 英特尔英特尔(集成电子公司) | |||
420LEDwire-to-boardconnector 文件:307.61 Kbytes Page:1 Pages | DBLECTRODB Lectro Inc 迪贝电子迪贝电子(上海)有限公司 |
IRFU420产品属性
- 类型
描述
- 型号
IRFU420
- 功能描述
MOSFET N-Chan 500V 2.4 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS(导通)
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
Infineon/英飞凌 |
21+ |
TO-251(I-PAK) |
6000 |
原装现货正品 |
|||
FAIRCHILD/仙童 |
23+ |
NA/ |
25162 |
原装现货,当天可交货,原型号开票 |
|||
IR |
2016+ |
TO251 |
1000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
IR |
2020+ |
TO-251 |
8000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
ir |
22+ |
500000 |
行业低价,代理渠道 |
||||
IR |
2020+ |
TO-251 |
16800 |
绝对原装进口现货,假一赔十,价格优势!? |
|||
VISHAY/威世 |
22+ |
100000 |
代理渠道/只做原装/可含税 |
||||
FAIRCHILD |
23+ |
TO-251 |
9526 |
||||
HARRIS(哈利斯) |
23+ |
TO251AA |
6000 |
||||
VISHAY/威世 |
24+ |
TO-251 |
860000 |
明嘉莱只做原装正品现货 |
IRFU420规格书下载地址
IRFU420参数引脚图相关
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- IRFU224
- IRFU220PBF
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- IRFU220
- IRFU214
- IRFU210
- IRFU120
- IRFU110
- IRFU024
- IRFU020
- IRFU014
- IRFU012
- IRFU010
- IRFS840
- IRFS830
- IRFS750
- IRFS740
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二三极管、连接器、模块、光耦、电容电阻、单片机、处理器、晶振、传感器、逻辑芯片、电源芯片、放大器、
2019-11-1
DdatasheetPDF页码索引
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