IRFR9220价格

参考价格:¥5.0979

型号:IRFR9220PBF 品牌:VISHAY 备注:这里有IRFR9220多少钱,2024年最近7天走势,今日出价,今日竞价,IRFR9220批发/采购报价,IRFR9220行情走势销售排行榜,IRFR9220报价。
型号 功能描述 生产厂家&企业 LOGO 操作
IRFR9220

3.6A,200V,1.500Ohm,P-ChannelPowerMOSFETs

TheseareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecificlevelofenergyintheavalanchebreakdownmodeofoperation.TheseareP-Channelenhancement-modesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switching

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil
IRFR9220

PowerMOSFET(Vdss=-200V,Rds(on)=1.5ohm,Id=-3.6A)

DESCRIPTION TheHEXFEtechnologyisthekeytoInternationalRectifiersadvancedlineofpowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingoftheHEXFETdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. FEATURES •

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRFR9220

PowerMOSFET

DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis

VishayVishay Siliconix

威世科技

Vishay
IRFR9220

PowerMOSFET

DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI
IRFR9220

DynamicdV/dtRating

DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI
IRFR9220

PowerMOSFET

DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI
IRFR9220

PowerMOSFET

FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Surface-mount(IRFR9220,SiHFR9220) •Straightlead(IRFUFU9220,SiHFU9220) •Availableintapeandreel •P-channel •Fastswitching •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

DynamicdV/dtRating

DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

PowerMOSFET

DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis

VishayVishay Siliconix

威世科技

Vishay

DynamicdV/dtRating

DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

PowerMOSFET

DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

DynamicdV/dtRating

DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

PowerMOSFET

DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

DynamicdV/dtRating

DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

PowerMOSFET

DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

PowerMOSFET

DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis

VishayVishay Siliconix

威世科技

Vishay

DynamicdV/dtRating

DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

PowerMOSFET

DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

PowerMOSFET

DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis

VishayVishay Siliconix

威世科技

Vishay

DynamicdV/dtRating

DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

PowerMOSFET

DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

PowerMOSFET

文件:785.7 Kbytes Page:13 Pages

VishayVishay Siliconix

威世科技

Vishay

HEXFET짰PowerMOSFET

文件:1.08269 Mbytes Page:10 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

PowerMOSFET

文件:785.7 Kbytes Page:13 Pages

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

文件:785.7 Kbytes Page:13 Pages

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

文件:785.7 Kbytes Page:13 Pages

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

文件:785.7 Kbytes Page:13 Pages

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

文件:785.7 Kbytes Page:13 Pages

VishayVishay Siliconix

威世科技

Vishay

Complete12-Bit1.5/3.0/10.0MSPSithicA/DConverters

GENERALDESCRIPTION TheAD9221,AD9223,andAD9220areagenerationofhighperformance,singlesupply12-bitanalog-to-digitalconverters.Eachdeviceexhibitstrue12-bitlinearityandtemperaturedriftperformance1aswellas11.5-bitorbetteracperformance.2TheAD9221/AD9223/AD9220sharet

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD

Complete12-Bit1.5/3.0/10.0MSPSMonolithicA/DConverters

GENERALDESCRIPTION TheAD9221,AD9223,andAD9220areagenerationofhighperformance,singlesupply12-bitanalog-to-digitalconverters.Eachdeviceexhibitstrue12-bitlinearityandtemperaturedriftperformance1aswellas11.5-bitorbetteracperformance.2TheAD9221/AD9223/AD9220sharet

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD

ProgrammableRambusTMXDRTMClockGenerator

文件:192.16 Kbytes Page:16 Pages

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT

ProgrammableRambusTMXDRTMClockGenerator

文件:192.16 Kbytes Page:16 Pages

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT

Complete12-Bit1.5/3.0/10.0MSPSolithicA/DConverters

文件:412.8 Kbytes Page:32 Pages

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD

IRFR9220产品属性

  • 类型

    描述

  • 型号

    IRFR9220

  • 功能描述

    MOSFET P-Chan 200V 3.6 Amp

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2024-5-16 23:38:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Vishay Siliconix
24+
D-Pak
30000
晶体管-分立半导体产品-原装正品
IR
2020+
TO252
8000
只做自己库存,全新原装进口正品假一赔百,可开13%增
IR
12+
TO-252(DPAK)
15000
全新原装,绝对正品,公司现货供应。
IR
23+
PLCC-44
18000
IR
23+
TO-252
9980
价格优势/原装现货/客户至上/欢迎广大客户来电查询
IR
2020+
TO-252
9500
百分百原装正品 真实公司现货库存 本公司只做原装 可
VISHAY/威世
22+
DPAK
9800
只做原装正品假一赔十!正规渠道订货!
VISHAY SEMICONDUCTOR
23+
SMD
918000
明嘉莱只做原装正品现货
VISHAY/威世
22+
TO-252
1450
原装正品实单价格可谈
IR
2021+
N/A
6800
只有原装正品

IRFR9220芯片相关品牌

  • ALLIED
  • DIODES
  • EATON
  • etc2
  • HARTING
  • Littelfuse
  • MERITEK
  • MOLEX1
  • NSC
  • RALTRON
  • SUMIDA
  • TEC

IRFR9220数据表相关新闻