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IRFR9220价格
参考价格:¥5.0979
型号:IRFR9220PBF 品牌:VISHAY 备注:这里有IRFR9220多少钱,2024年最近7天走势,今日出价,今日竞价,IRFR9220批发/采购报价,IRFR9220行情走势销售排行榜,IRFR9220报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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IRFR9220 | 3.6A,200V,1.500Ohm,P-ChannelPowerMOSFETs TheseareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecificlevelofenergyintheavalanchebreakdownmodeofoperation.TheseareP-Channelenhancement-modesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switching | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | ||
IRFR9220 | PowerMOSFET(Vdss=-200V,Rds(on)=1.5ohm,Id=-3.6A) DESCRIPTION TheHEXFEtechnologyisthekeytoInternationalRectifiersadvancedlineofpowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingoftheHEXFETdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. FEATURES • | IRFInternational Rectifier 英飞凌英飞凌科技公司 | ||
IRFR9220 | PowerMOSFET DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis | VishayVishay Siliconix 威世科技 | ||
IRFR9220 | PowerMOSFET DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis | KERSEMI Kersemi Electronic Co., Ltd. | ||
IRFR9220 | DynamicdV/dtRating DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis | KERSEMI Kersemi Electronic Co., Ltd. | ||
IRFR9220 | PowerMOSFET DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis | KERSEMI Kersemi Electronic Co., Ltd. | ||
IRFR9220 | PowerMOSFET FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Surface-mount(IRFR9220,SiHFR9220) •Straightlead(IRFUFU9220,SiHFU9220) •Availableintapeandreel •P-channel •Fastswitching •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 | VishayVishay Siliconix 威世科技 | ||
PowerMOSFET DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis | KERSEMI Kersemi Electronic Co., Ltd. | |||
DynamicdV/dtRating DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis | KERSEMI Kersemi Electronic Co., Ltd. | |||
PowerMOSFET DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis | VishayVishay Siliconix 威世科技 | |||
DynamicdV/dtRating DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis | KERSEMI Kersemi Electronic Co., Ltd. | |||
PowerMOSFET DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis | KERSEMI Kersemi Electronic Co., Ltd. | |||
DynamicdV/dtRating DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis | KERSEMI Kersemi Electronic Co., Ltd. | |||
PowerMOSFET DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis | KERSEMI Kersemi Electronic Co., Ltd. | |||
DynamicdV/dtRating DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis | KERSEMI Kersemi Electronic Co., Ltd. | |||
PowerMOSFET DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis | KERSEMI Kersemi Electronic Co., Ltd. | |||
PowerMOSFET DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis | VishayVishay Siliconix 威世科技 | |||
DynamicdV/dtRating DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis | KERSEMI Kersemi Electronic Co., Ltd. | |||
PowerMOSFET DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis | KERSEMI Kersemi Electronic Co., Ltd. | |||
PowerMOSFET DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis | VishayVishay Siliconix 威世科技 | |||
DynamicdV/dtRating DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis | KERSEMI Kersemi Electronic Co., Ltd. | |||
PowerMOSFET DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis | KERSEMI Kersemi Electronic Co., Ltd. | |||
PowerMOSFET 文件:785.7 Kbytes Page:13 Pages | VishayVishay Siliconix 威世科技 | |||
HEXFET짰PowerMOSFET 文件:1.08269 Mbytes Page:10 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
PowerMOSFET 文件:785.7 Kbytes Page:13 Pages | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET 文件:785.7 Kbytes Page:13 Pages | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET 文件:785.7 Kbytes Page:13 Pages | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET 文件:785.7 Kbytes Page:13 Pages | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET 文件:785.7 Kbytes Page:13 Pages | VishayVishay Siliconix 威世科技 | |||
Complete12-Bit1.5/3.0/10.0MSPSithicA/DConverters GENERALDESCRIPTION TheAD9221,AD9223,andAD9220areagenerationofhighperformance,singlesupply12-bitanalog-to-digitalconverters.Eachdeviceexhibitstrue12-bitlinearityandtemperaturedriftperformance1aswellas11.5-bitorbetteracperformance.2TheAD9221/AD9223/AD9220sharet | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | |||
Complete12-Bit1.5/3.0/10.0MSPSMonolithicA/DConverters GENERALDESCRIPTION TheAD9221,AD9223,andAD9220areagenerationofhighperformance,singlesupply12-bitanalog-to-digitalconverters.Eachdeviceexhibitstrue12-bitlinearityandtemperaturedriftperformance1aswellas11.5-bitorbetteracperformance.2TheAD9221/AD9223/AD9220sharet | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | |||
ProgrammableRambusTMXDRTMClockGenerator 文件:192.16 Kbytes Page:16 Pages | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | |||
ProgrammableRambusTMXDRTMClockGenerator 文件:192.16 Kbytes Page:16 Pages | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | |||
Complete12-Bit1.5/3.0/10.0MSPSolithicA/DConverters 文件:412.8 Kbytes Page:32 Pages | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 |
IRFR9220产品属性
- 类型
描述
- 型号
IRFR9220
- 功能描述
MOSFET P-Chan 200V 3.6 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS(导通)
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
Vishay Siliconix |
24+ |
D-Pak |
30000 |
晶体管-分立半导体产品-原装正品 |
|||
IR |
2020+ |
TO252 |
8000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
IR |
12+ |
TO-252(DPAK) |
15000 |
全新原装,绝对正品,公司现货供应。 |
|||
IR |
23+ |
PLCC-44 |
18000 |
||||
IR |
23+ |
TO-252 |
9980 |
价格优势/原装现货/客户至上/欢迎广大客户来电查询 |
|||
IR |
2020+ |
TO-252 |
9500 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
VISHAY/威世 |
22+ |
DPAK |
9800 |
只做原装正品假一赔十!正规渠道订货! |
|||
VISHAY SEMICONDUCTOR |
23+ |
SMD |
918000 |
明嘉莱只做原装正品现货 |
|||
VISHAY/威世 |
22+ |
TO-252 |
1450 |
原装正品实单价格可谈 |
|||
IR |
2021+ |
N/A |
6800 |
只有原装正品 |
IRFR9220规格书下载地址
IRFR9220参数引脚图相关
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- l100
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- jumper
- jtag接口
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- j111
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- isd1420
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- IRFS840
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瀚佳科技(深圳)有限公司: 专业销售集成电路IC.单片机.内存闪存.二三级管模块等电子元器件。
2018-12-30
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