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IRFR9220TR价格
参考价格：￥3.4408
型号：IRFR9220TRLPBF 品牌：Vishay / Semiconductor 备注：这里有IRFR9220TR多少钱，2024年最近7天走势，今日出价，今日竞价，IRFR9220TR批发/采购报价，IRFR9220TR行情走势销售排行榜，IRFR9220TR报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFR9220TR | PowerMOSFET DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis | VishayVishay Siliconix 威世科技威世科技半导体 |  |   |
IRFR9220TR | DynamicdV/dtRating DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis | KERSEMI Kersemi Electronic Co., Ltd. |  | |
PowerMOSFET DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis | KERSEMI Kersemi Electronic Co., Ltd. | | | |
PowerMOSFET DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
DynamicdV/dtRating DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis | KERSEMI Kersemi Electronic Co., Ltd. | | | |
PowerMOSFET DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis | KERSEMI Kersemi Electronic Co., Ltd. | | | |
PowerMOSFET DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
DynamicdV/dtRating DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis | KERSEMI Kersemi Electronic Co., Ltd. | | | |
PowerMOSFET DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis | KERSEMI Kersemi Electronic Co., Ltd. | | | |
DynamicdV/dtRating DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis | KERSEMI Kersemi Electronic Co., Ltd. | | | |
PowerMOSFET DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
PowerMOSFET DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis | KERSEMI Kersemi Electronic Co., Ltd. | | | |
PowerMOSFET DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
DynamicdV/dtRating DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis | KERSEMI Kersemi Electronic Co., Ltd. | | | |
PowerMOSFET DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis | KERSEMI Kersemi Electronic Co., Ltd. | | | |
PowerMOSFET 文件：785.7 Kbytes Page：13 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
PowerMOSFET 文件：785.7 Kbytes Page：13 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
PowerMOSFET 文件：785.7 Kbytes Page：13 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
PowerMOSFET 文件：785.7 Kbytes Page：13 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Complete12-Bit1.5/3.0/10.0MSPSithicA/DConverters GENERALDESCRIPTION TheAD9221,AD9223,andAD9220areagenerationofhighperformance,singlesupply12-bitanalog-to-digitalconverters.Eachdeviceexhibitstrue12-bitlinearityandtemperaturedriftperformance1aswellas11.5-bitorbetteracperformance.2TheAD9221/AD9223/AD9220sharet | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 |  | | |
Complete12-Bit1.5/3.0/10.0MSPSMonolithicA/DConverters GENERALDESCRIPTION TheAD9221,AD9223,andAD9220areagenerationofhighperformance,singlesupply12-bitanalog-to-digitalconverters.Eachdeviceexhibitstrue12-bitlinearityandtemperaturedriftperformance1aswellas11.5-bitorbetteracperformance.2TheAD9221/AD9223/AD9220sharet | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | | | |
ProgrammableRambusTMXDRTMClockGenerator 文件：192.16 Kbytes Page：16 Pages | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 |  | | |
ProgrammableRambusTMXDRTMClockGenerator 文件：192.16 Kbytes Page：16 Pages | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | | | |
Complete12-Bit1.5/3.0/10.0MSPSolithicA/DConverters 文件：412.8 Kbytes Page：32 Pages | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | | |
IRFR9220TR产品属性
- 类型
描述
- 型号
IRFR9220TR
- 功能描述
MOSFET P-Chan 200V 3.6 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
NA |
20000 |
全新原装假一赔十 |
|||
IR |
2020+ |
TO252 |
8000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
IR |
23+ |
NA/ |
1505 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
IR/INFINEON |
24+23+ |
TO-252-2 |
12580 |
16年电子元件现货供应商 终端BOM表可配单提供样品 |
|||
进口 |
23+ |
TO-263 |
8890 |
价格优势/原装现货/客户至上/欢迎广大客户来电查询 |
|||
VISHAY |
23+ |
SOT-252 |
65400 |
||||
VISHAY SEMICONDUCTOR |
23+ |
SMD |
918000 |
明嘉莱只做原装正品现货 |
|||
Vishay Siliconix |
23+ |
TO2523 DPak (2 Leads + Tab) SC |
9000 |
原装正品，支持实单 |
|||
IR |
2020+ |
TO-252 |
9500 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
IR |
18+ |
TO252 |
9862 |
全新原装现货/假一罚百! |
IRFR9220TR芯片相关品牌
IRFR9220TR规格书下载地址
IRFR9220TR参数引脚图相关
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- jumper
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- isd1420
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- IRFS840
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瀚佳科技(深圳）有限公司： 专业销售集成电路IC.单片机.内存闪存.二三级管模块等电子元器件。
2018-12-30
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