位置：首页 > IC中文资料第1088页 > IRFR1N60ATRRPBF
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFR1N60ATRRPBF | PowerMOSFET FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •Materialcategorization:Fordefinitionsofcompliancepleaseseewww.vishay.com/doc?99912 APPLICATIO | VishayVishay Siliconix 威世科技 |  |   |
GOLDBONDEDGERMANIUMDIODE GermaniumGlassDiode Features •GermaniumGlassDiode •RoHSCompliance | ETCList of Unclassifed Manufacturers 未分类制造商 |  | | |
SiliconAvalancheDiodes-1500WattMetalAxialLeadedTransientVoltageSuppressors FEATURES •Hermeticallysealed •Breakdownvoltagerange6.8-200volts •Glasspassivatedjunction •Excellentclampingcapability •Lowzenerimpedance •100surgetested •-55°Cto+150°C •Bi-directional MAXIMUMRATING •PeakPulsePower(Ppk):15000Watts(10x1000µs)@25°C(seedi | LittelfuseLittelfuse Inc. 力特力特公司 |  | | |
SchottkyBarrierDiode Features 1.Highreliability 2.Lowreversecurrentandlowforwardvoltage Applications Lowcurrentrectificationandhighspeedswitching Construction Siliconepitaxialplanar | FORMOSAFormosa MS 美丽微半导体美丽微半导体股份有限公司 |  | | |
JEDECDO-7PACKAGE JEDECDO-7PACKAGE | ETC1List of Unclassifed Manufacturers 未分类制造商 |  | | |
1.2Amps,600VoltsN-CHANNELMOSFET DESCRIPTION TheUTC1N60isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinpow | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 |  | |
IRFR1N60ATRRPBF产品属性
- 类型
描述
- 型号
IRFR1N60ATRRPBF
- 功能描述
MOSFET N-Chan 600V 1.4 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
17+ |
TO252 |
792 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
Vishay Siliconix |
21+ |
TO2523 DPak (2 Leads + Tab) SC |
13880 |
公司只售原装,支持实单 |
|||
IR |
23+ |
TO252 |
90000 |
只做原厂渠道价格优势可提供技术支持 |
|||
IR |
23+ |
65480 |
|||||
IR |
23+ |
NA/ |
4042 |
原装现货,当天可交货,原型号开票 |
|||
VISHAY-威世 |
24+25+/26+27+ |
TO-252-3 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
Vishay Siliconix |
22+ |
TO2523 DPak (2 Leads + Tab) SC |
9000 |
原厂渠道,现货配单 |
|||
IR |
TO252 |
6000 |
原装现货,长期供应,终端可账期 |
||||
IR |
23+ |
TO252 |
50000 |
全新原装正品现货,支持订货 |
|||
Vishay |
23+ |
DPAK |
33500 |
全新原装真实库存含13点增值税票! |
IRFR1N60ATRRPBF芯片相关品牌
IRFR1N60ATRRPBF规格书下载地址
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IRFR1N60ATRRPBF数据表相关新闻
IRFR15N20DTRPBF
表面贴装型N通道200V17A（Tc）3W（Ta），140W（Tc）D-PAK（TO-252AA）
2022-10-19IRFR13N20DTRPBF
联系人张生电话19926428992QQ1924037095
2021-10-12IRFR13N20DTRPBF
属性参数值 商品目录场效应管(MOSFET) 漏源电压(Vdss)200V 连续漏极电流(Id)13A 功率(Pd)110W 导通电阻(RDS(on)@Vgs，Id)235mΩ10V，8A 阈值电压(Vgs(th)@Id)5.5V250μA 类型N沟道
2021-10-12IRFR320TRPBF深圳原装进口无铅现货
焕盛达竭诚为广大客户提供一站式配套服务，解决您的BOM表采购之痛，让您采购无忧！
2021-1-26IRFR320TRPBF深圳原装无铅现货
焕盛达竭诚为广大客户提供一站式配套服务，解决您的BOM表采购之痛，让您采购无忧！
2020-12-24IRFR2405PDF资料原装正品供应商
IRFR2405PDF资料
2019-1-28
DdatasheetPDF页码索引
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