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1N60价格
参考价格:¥0.1674
型号:1N6002B-TP 品牌:Micro 备注:这里有1N60多少钱,2024年最近7天走势,今日出价,今日竞价,1N60批发/采购报价,1N60行情走势销售排行榜,1N60报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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1N60 | GOLDBONDEDGERMANIUMDIODE GermaniumGlassDiode Features •GermaniumGlassDiode •RoHSCompliance | ETCList of Unclassifed Manufacturers 未分类制造商 | ||
1N60 | SiliconAvalancheDiodes-1500WattMetalAxialLeadedTransientVoltageSuppressors FEATURES •Hermeticallysealed •Breakdownvoltagerange6.8-200volts •Glasspassivatedjunction •Excellentclampingcapability •Lowzenerimpedance •100surgetested •-55°Cto+150°C •Bi-directional MAXIMUMRATING •PeakPulsePower(Ppk):15000Watts(10x1000µs)@25°C(seedi | LittelfuseLittelfuse Inc. 力特力特公司 | ||
1N60 | SchottkyBarrierDiode Features 1.Highreliability 2.Lowreversecurrentandlowforwardvoltage Applications Lowcurrentrectificationandhighspeedswitching Construction Siliconepitaxialplanar | FORMOSAFormosa MS 美丽微半导体美丽微半导体股份有限公司 | ||
1N60 | JEDECDO-7PACKAGE JEDECDO-7PACKAGE | ETC1List of Unclassifed Manufacturers 未分类制造商 | ||
1N60 | 1.2Amps,600VoltsN-CHANNELMOSFET DESCRIPTION TheUTC1N60isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinpow | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | ||
1N60 | GERMANIUMDIODES Features ·Metalsiliconjunction,majoritycarrierconduction ·Highcurrentcapability,Lowforwardvoltagedrop ·ExtremelylowreversecurrentlR ·Ultraspeedswitchingcharacteristics ·Smalltemperaturecoefficientofforwardcharacteristics ·SatisfactoryWavedetectione | DAESAN Daesan Electronics Corp. | ||
1N60 | SMALLSIGNALSCHOTTKYDIODE VOLTAGERANGE:40V CURRENT:0.03A FEATURES Metalsilliconjunctionmajoritycarrierconduction Highcurrentcapability,lowforwardvoltagedrop ExtremelylowreversecurrentIR Ultraspeedswitchingcharacteristics Smalltemperaturecoefficientofforwardcharacteristics | BILINGalaxy Semi-Conductor Holdings Limited 世纪微电子常州银河世纪微电子股份有限公司 | ||
1N60 | SchottkyBarrierDiodesSMALLSIGNALSCHOTTKYDIODES30m/50mAMPERES40/45VOLTS Features: *HighReliability *LowReverseCurrentandLowForwardVoltage Applications: *LowCurrentRectificationandHighSpeedSwitching | WEITRONWEITRON 威堂電子科技 | ||
1N60 | 600VN-ChannelMOSFET Features •HighReliability •LowReverseCurrentandLowForwardVoltage ·Marking:Cathodebandandtypenumber •MoistureSensitivity:Level1perJ-STD-020C MaximumRatings •Storage&OperatingJunctionTemperature:-65℃to+125℃ | TGS Tiger Electronic Co.,Ltd | ||
1N60 | SchottkyBarrierRectifier Features •HighReliability •LowReverseCurrentandLowForwardVoltage ·Marking:Cathodebandandtypenumber •MoistureSensitivity:Level1perJ-STD-020C MaximumRatings •Storage&OperatingJunctionTemperature:-65℃to+125℃ | TGS Tiger Electronic Co.,Ltd | ||
1N60 | SMALLSIGNALSCHOTTKYDIODES FEATURES •Metal-on-siliconjunction,majoritycarrierconduction •Highcurrentcapability,Lowforwardvoltagedrop •ExtremelylowreversecurrentIR •Ultraspeedswitchingcharacteristics •Smalltemperaturecoefficientofforwardcharacteristics •Satisfactorywavedetectionefficiency | JINANJINGHENGJinan Jingheng (Group) Co.,Ltd 晶恒集团济南晶恒电子有限责任公司 | ||
1N60 | SMALLSIGNALSCHOTTKYDIODES ReverseVoltage-40to45Volts ForwardCurrent-0.03/0.05Amperes FEATURES Fastswitchingforhighefficiency Lowreverseleakage Highforwardsurgecurrentcapability Hightemperaturesolderingguaranteed 250C/10seconds,0.375”(9.5mm)leadlength,5lbs.(2.3kg)tension | SYChangzhou Shunye Electronics Co.,Ltd. 顺烨电子江苏顺烨电子有限公司 | ||
1N60 | SMALLSIGNALSCHOTTKYDIODE FEATURES ●Metal-on-siliconjunction,majoritycarrierconduction ●Highcurrentcapability,Lowforwardvoltagedrop ●ExtremelylowreversecurrentIr ●Ultraspeedswitchingcharacteristics ●Smalltemperaturecoefficientofforwardcharacteristics ●SatisfactoryWavedetectio | DIOTECH Diotech Company. | ||
1N60 | SchottkyBarrierRectifier Features •HighReliability •LowReverseCurrentandLowForwardVoltage ·Marking:Cathodebandandtypenumber •LeadFreeFinish/RohsCompliant(Note1)(PSuffixdesignatesCompliant.Seeorderinginformation) •MoistureSensitivityLevel1 MaximumRatings •Storage& | MCCMicro Commercial Components 美微科美微科半导体公司 | ||
1N60 | Lowforwardvoltagedrop-lowpowerconsumption FEATURES Lowforwardvoltagedrop -lowpowerconsumption Thirtyyearsofprovenreliability -onemillionhoursmeantimebetweenfailures(MTBF) Verylownoiselevel Metallurgicallybonded | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | ||
1N60 | N-CHANNELMOSFET DESCRIPTION 1N601N65isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinpowersu | ZSELECZibo Seno Electronic Engineering Co.,Ltd 淄博圣诺电子淄博圣诺电子工程有限公司 | ||
1N60 | N-Channel650V(D-S)MOSFET FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •ComplianttoRoHSdirective2002/95/EC | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | ||
1N60 | N-ChannelPowerMOSFET DESCRIPTION Theyaredesignedforuseinapplicationssuchasswitchedmodepowersupplies,DCtoDCconverters,PWMmotorcontrols,bridgecircuitsandgeneralpurposeswitchingapplications. TheNell1N60isathree-terminalsilicondevicewithcurrentconductioncapabilityof1.2A,fastswitc | NELLSEMINell Semiconductor Co., Ltd 尼爾半導體尼爾半導體股份有限公司 | ||
1N60 | SmallSignalSchottkyDiodes VOLTAGERANGE:40V CURRENT:0.03A DO-35(GLASS) FEATURES Metalsilliconjunctionmajoritycarrierconduction Highcurrentcapability,lowforwardvoltagedrop ExtremelylowreversecurrentIR Ultraspeedswitchingcharacteristics Smalltemperaturecoefficientofforward | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司 | ||
1N60 | FastSwitching •DESCRITION •Designedforhighefficiencyswitchmodepowersupply. •FEATURES •DrainCurrent–ID=1A@TC=25℃ •DrainSourceVoltage- :VDSS=600V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=8Ω(Max) •AvalancheEnergySpecified •FastSwitching •SimpleDriveRequireme | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ||
1N60 | SMALLSIGNALSCHOTTKYDIODE FEATURES ◇Metalsiliconjunctionmajoritycarrierconduction ◇Highcurrentcapability,lowforwardvoltagedrop ◇ExtremelylowreversecurrentIR ◇Ultraspeedswitchingcharacteristics ◇Smalltemperaturecoefficientofforwardcharacteristics ◇Satisfactorywavedetectionefficiency ◇F | DSK Diode Semiconductor Korea | ||
1N60 | SMALLSIGNALSCHOTTKYDIODES FEATURES •Metal-on-siliconjunction,majoritycarrierconduction •Highcurrentcapability,Lowforwardvoltagedrop •ExtremelylowreversecurrentIR •Ultraspeedswitchingcharacteristics •Smalltemperaturecoefficientofforwardcharacteristics •Satisfactorywavedetectionefficiency | GXELECTRONICSShandong Xinghe Minghui Electronics Co., Ltd 星合明辉电子山东星合明辉电子有限公司 | ||
1N60 | HermeticallySealedGlassCasePointContactGermaniumDiode PRODUCTFEATURE 1N60isapointcontactdiodeemployingN-fromGermaniumandgivesanefficientandexcellentlinearitywhenusedinTVimagedetection,FMdetection,radio,AMdetection,etc. | THINKISEMIThinki Semiconductor Co., Ltd. 思祁半导体思祁半导体有限公司 | ||
1N60 | 45VDetectionswitchtube 文件:365.394 Kbytes Page:2 Pages | |||
1N60 | SMALLSIGNALSCHOTTKYDIODES 文件:365.313 Kbytes Page:2 Pages | |||
1N60 | 1.2Amps,600/650VoltsN-CHANNELMOSFET 文件:275.21 Kbytes Page:6 Pages | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | ||
1N60 | N-CHANNELMOSFET 文件:395.7 Kbytes Page:8 Pages | ARTSCHIP ARTSCHIP ELECTRONICS CO.,LMITED. | ||
1N60 | SmallSignalSchottkyDiodes 文件:123.63 Kbytes Page:2 Pages | YANGJIEYangzhou yangjie electronic co., ltd 扬州扬杰电子扬州扬杰电子科技股份有限公司 | ||
1N60 | SMALLSIGNALSCHOTTKYDIODES 文件:1.03992 Mbytes Page:2 Pages | SHUNYEShunye Enterprise 顺烨电子江苏顺烨电子有限公司 | ||
1N60 | SMALLSIGNALSCHOTTKYDIODES 文件:56.61 Kbytes Page:2 Pages | JINGHENG Jinan Jing Heng Electronics Co., Ltd. | ||
1N60 | 1.2A,600VN-CHANNELPOWERMOSFET 文件:282.69 Kbytes Page:6 Pages | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | ||
500mWZENERDIODES MAXIMUMRATINGS OperatingandStorageTemperature-65to+175°C DCPowerDissipation@25°C LeadLength3/8”500mW Derateabove50°C3.33mW/°C ForwardVoltage@200mA1.1V | DIGITRON Digitron Semiconductors | |||
Axial-Leaded500mWZenerDiodes DESCRIPTION Thepopular1N5985thru1N6031seriesof0.5wattZenerVoltageRegulatorsprovidesaselectionfrom2.4to200voltsinstandard5or10tolerancesaswellastightertolerancesidentifiedbydifferentsuffixlettersonthepartnumber.Theseglassaxial-leadedDO-35Zenersarealso | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
500MILLIWATTGLASSZENERDIODES 500MILLIWATTGLASSZENERDIODES | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
Axial-Leaded500mWZenerDiodes DESCRIPTION Thepopular1N5985thru1N6031seriesof0.5wattZenerVoltageRegulatorsprovidesaselectionfrom2.4to200voltsinstandard5or10tolerancesaswellastightertolerancesidentifiedbydifferentsuffixlettersonthepartnumber.Theseglassaxial-leadedDO-35Zenersareals | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
Axial-Leaded500mWZenerDiodes DESCRIPTION Thepopular1N5985thru1N6031seriesof0.5wattZenerVoltageRegulatorsprovidesaselectionfrom2.4to200voltsinstandard5or10tolerancesaswellastightertolerancesidentifiedbydifferentsuffixlettersonthepartnumber.Theseglassaxial-leadedDO-35Zenersareals | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
ZENERDIODES VZ:2.4-200V PD:500mW FEATURES: *Extensiveselectionfrom2.0Vto200V *Standardzenervoltagetoleranceis±10. *Othertolerancesareavailableuponrequest. *Pb/RoHSFree | SYNSEMI SynSemi,Inc. | |||
500mWZenerDiode2.4??47Volts Features •LeadFreeFinish/RohsCompliant(Note1)(PSuffixdesignatesCompliant.Seeorderinginformation) •HighReliability •VerySharpReverseCharacteristic •VZ–tolerance±5 •MoistureSensitivity:Level1 •Marking:Cathodebandandtypenumber | MCCMicro Commercial Components 美微科美微科半导体公司 | |||
Zeners Zeners | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
500mWDO-35HermeticallySealedGlassZenerVoltageRegulators SpecificationFeatures •ZenerVoltageRange=2.4Vto110V •ESDRatingofClass3(>16KV)perHumanBodyModel •DO-35Package(DO-204AH) •DoubleSlugTypeConstruction •MetallurgicalBonding | YEASHINYea Shin Technology Co., Ltd 亞昕科技亞昕科技股份有限公司 | |||
SurfaceMount500mWZenerDiodes DESCRIPTION Thepopular1N5985BUR-1thru1N6031BUR-1seriesof0.5wattZenervoltageregulatorsprovidesaselectionfrom2.4to200voltsin10,5,2and1tolerances.TheseglasssurfacemountDO-213AAZenersarealsoavailableinvariousmilitaryequivalentscreeninglevelsbyaddingaprefix | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
SurfaceMount500mWZenerDiodes DESCRIPTION Thepopular1N5985BUR-1thru1N6031BUR-1seriesof0.5wattZenervoltageregulatorsprovidesaselectionfrom2.4to200voltsin10,5,2and1tolerances.TheseglasssurfacemountDO-213AAZenersarealsoavailableinvariousmilitaryequivalentscreeninglevelsbyaddingaprefix | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
SILICON500mWZENERDIODES DESCRIPTION Thepopular1N5985thru1N6031seriesof0.5wattZenerVoltageRegulatorsprovidesaselectionfrom2.4to200voltsinstandard5or10tolerancesaswellastightertolerancesidentifiedbydifferentsuffixlettersonthepartnumber.Theseglassaxial-leadedDO-35Zenersareals | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
Axial-Leaded500mWZenerDiodes DESCRIPTION Thepopular1N5985thru1N6031seriesof0.5wattZenerVoltageRegulatorsprovidesaselectionfrom2.4to200voltsinstandard5or10tolerancesaswellastightertolerancesidentifiedbydifferentsuffixlettersonthepartnumber.Theseglassaxial-leadedDO-35Zenersareals | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
500mWZENERDIODES MAXIMUMRATINGS OperatingandStorageTemperature-65to+175°C DCPowerDissipation@25°C LeadLength3/8”500mW Derateabove50°C3.33mW/°C ForwardVoltage@200mA1.1V | DIGITRON Digitron Semiconductors | |||
Axial-Leaded500mWZenerDiodes DESCRIPTION Thepopular1N5985thru1N6031seriesof0.5wattZenerVoltageRegulatorsprovidesaselectionfrom2.4to200voltsinstandard5or10tolerancesaswellastightertolerancesidentifiedbydifferentsuffixlettersonthepartnumber.Theseglassaxial-leadedDO-35Zenersarealso | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
500MILLIWATTGLASSZENERDIODES 500MILLIWATTGLASSZENERDIODES | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
ZENERDIODES VZ:2.4-200V PD:500mW FEATURES: *Extensiveselectionfrom2.0Vto200V *Standardzenervoltagetoleranceis±10. *Othertolerancesareavailableuponrequest. *Pb/RoHSFree | SYNSEMI SynSemi,Inc. | |||
Axial-Leaded500mWZenerDiodes DESCRIPTION Thepopular1N5985thru1N6031seriesof0.5wattZenerVoltageRegulatorsprovidesaselectionfrom2.4to200voltsinstandard5or10tolerancesaswellastightertolerancesidentifiedbydifferentsuffixlettersonthepartnumber.Theseglassaxial-leadedDO-35Zenersareals | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
Zeners Zeners | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
500mWZenerDiode2.4??47Volts Features •LeadFreeFinish/RohsCompliant(Note1)(PSuffixdesignatesCompliant.Seeorderinginformation) •HighReliability •VerySharpReverseCharacteristic •VZ–tolerance±5 •MoistureSensitivity:Level1 •Marking:Cathodebandandtypenumber | MCCMicro Commercial Components 美微科美微科半导体公司 | |||
500mWDO-35HermeticallySealedGlassZenerVoltageRegulators SpecificationFeatures •ZenerVoltageRange=2.4Vto110V •ESDRatingofClass3(>16KV)perHumanBodyModel •DO-35Package(DO-204AH) •DoubleSlugTypeConstruction •MetallurgicalBonding | YEASHINYea Shin Technology Co., Ltd 亞昕科技亞昕科技股份有限公司 | |||
SurfaceMount500mWZenerDiodes DESCRIPTION Thepopular1N5985BUR-1thru1N6031BUR-1seriesof0.5wattZenervoltageregulatorsprovidesaselectionfrom2.4to200voltsin10,5,2and1tolerances.TheseglasssurfacemountDO-213AAZenersarealsoavailableinvariousmilitaryequivalentscreeninglevelsbyaddingaprefix | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
SurfaceMount500mWZenerDiodes DESCRIPTION Thepopular1N5985BUR-1thru1N6031BUR-1seriesof0.5wattZenervoltageregulatorsprovidesaselectionfrom2.4to200voltsin10,5,2and1tolerances.TheseglasssurfacemountDO-213AAZenersarealsoavailableinvariousmilitaryequivalentscreeninglevelsbyaddingaprefix | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
Axial-Leaded500mWZenerDiodes DESCRIPTION Thepopular1N5985thru1N6031seriesof0.5wattZenerVoltageRegulatorsprovidesaselectionfrom2.4to200voltsinstandard5or10tolerancesaswellastightertolerancesidentifiedbydifferentsuffixlettersonthepartnumber.Theseglassaxial-leadedDO-35Zenersareals | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
500MILLIWATTGLASSZENERDIODES 500MILLIWATTGLASSZENERDIODES | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
500mWZENERDIODES MAXIMUMRATINGS OperatingandStorageTemperature-65to+175°C DCPowerDissipation@25°C LeadLength3/8”500mW Derateabove50°C3.33mW/°C ForwardVoltage@200mA1.1V | DIGITRON Digitron Semiconductors | |||
Axial-Leaded500mWZenerDiodes DESCRIPTION Thepopular1N5985thru1N6031seriesof0.5wattZenerVoltageRegulatorsprovidesaselectionfrom2.4to200voltsinstandard5or10tolerancesaswellastightertolerancesidentifiedbydifferentsuffixlettersonthepartnumber.Theseglassaxial-leadedDO-35Zenersarealso | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
SILICON500mWZENERDIODES DESCRIPTION Thepopular1N5985thru1N6031seriesof0.5wattZenerVoltageRegulatorsprovidesaselectionfrom2.4to200voltsinstandard5or10tolerancesaswellastightertolerancesidentifiedbydifferentsuffixlettersonthepartnumber.Theseglassaxial-leadedDO-35Zenersareals | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
ZENERDIODES VZ:2.4-200V PD:500mW FEATURES: *Extensiveselectionfrom2.0Vto200V *Standardzenervoltagetoleranceis±10. *Othertolerancesareavailableuponrequest. *Pb/RoHSFree | SYNSEMI SynSemi,Inc. |
1N60产品属性
- 类型
描述
- 型号
1N60
- 制造商
JINANJINGHENG
- 制造商全称
Jinan Jingheng(Group) Co.,Ltd
- 功能描述
SMALL SIGNAL SCHOTTKY DIODES
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
UTC |
23/22+ |
SOT223 |
20000 |
20年老代理.原厂技术支持 |
|||
UTC/友顺 |
22+ |
SOT-223 |
2600 |
只做原装进口 免费送样!! |
|||
NS/国半 |
21+ |
CAN |
8080 |
原装现货实单必成 只做原装! |
|||
Fairchild Semiconductor |
23+ |
SOIC-24 |
6000 |
15年原装正品企业 |
|||
JF |
1940+ |
DIODE |
35500 |
JF专营!正规代理,错过是损失! |
|||
UTC/友顺 |
22+ |
SOT-89 |
50000 |
有挂就有货,只做原装免费送样-可BOM配单 |
|||
LL34 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
UNIZON |
DIODE |
85 |
|||||
友顺 UTC |
23+ |
SOT-223 |
41330 |
原装正品,实单请联系 |
|||
BILIN |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
1N60规格书下载地址
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- 1N5989B-TP
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- 1N5987B
- 1N5986B
- 1N5969
- 1N5968
- 1N5956BRLG/BKN
- 1N5956BRLG
- 1N5956BG
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DdatasheetPDF页码索引
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