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IRFR110价格
参考价格:¥1.4470
型号:IRFR110PBF 品牌:VISHAY 备注:这里有IRFR110多少钱,2024年最近7天走势,今日出价,今日竞价,IRFR110批发/采购报价,IRFR110行情走势销售排行榜,IRFR110报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
IRFR110 | 4.7A,100V,0.540Ohm,N-ChannelPowerMOSFETs 4.7A,100V,0.540Ohm,N-ChannelPowerMOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.TheseadvancedpowerMOSFETsaredesignedforuse | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | ||
IRFR110 | PowerMOSFET DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Power | VishayVishay Siliconix 威世科技威世科技半导体 | ||
IRFR110 | DynamicdV/dtRatingRepetitiveAvalancheRated DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | KERSEMI Kersemi Electronic Co., Ltd. | ||
IRFR110 | PowerMOSFET FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Surface-mount(IRFR110,SiHFR110) •Availableintapeandreel •Fastswitching •Easeofparalleling •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdgeneration | VishayVishay Siliconix 威世科技威世科技半导体 | ||
IRFR110 | iscN-ChannelMOSFETTransistor 文件:321.33 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ||
PowerMOSFET FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Surface-mount(IRFR110,SiHFR110) •Availableintapeandreel •Fastswitching •Easeofparalleling •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdgeneration | VishayVishay Siliconix 威世科技威世科技半导体 | |||
AdvancedPowerMOSFET FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■LowerLeakageCurrent:10μA(Max.)@VDS=100V ■LowerRDS(ON):0.289Ω(Typ.) | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
PowerMOSFET DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Power | VishayVishay Siliconix 威世科技威世科技半导体 | |||
HEXFET짰PowerMOSFET DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD-Pakisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechni | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
DynamicdV/dtRatingRepetitiveAvalancheRated DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | KERSEMI Kersemi Electronic Co., Ltd. | |||
DynamicdV/dtRatingRepetitiveAvalancheRated DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | KERSEMI Kersemi Electronic Co., Ltd. | |||
PowerMOSFET DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Power | VishayVishay Siliconix 威世科技威世科技半导体 | |||
PowerMOSFET DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Power | VishayVishay Siliconix 威世科技威世科技半导体 | |||
DynamicdV/dtRatingRepetitiveAvalancheRated DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | KERSEMI Kersemi Electronic Co., Ltd. | |||
DynamicdV/dtRatingRepetitiveAvalancheRated DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | KERSEMI Kersemi Electronic Co., Ltd. | |||
PowerMOSFET DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Power | VishayVishay Siliconix 威世科技威世科技半导体 | |||
PowerMOSFET DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Power | VishayVishay Siliconix 威世科技威世科技半导体 | |||
DynamicdV/dtRatingRepetitiveAvalancheRated DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | KERSEMI Kersemi Electronic Co., Ltd. | |||
PowerMOSFET DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Power | VishayVishay Siliconix 威世科技威世科技半导体 | |||
DynamicdV/dtRatingRepetitiveAvalancheRated DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | KERSEMI Kersemi Electronic Co., Ltd. | |||
iscN-ChannelMOSFETTransistor 文件:373.66 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
AdvancedPowerMOSFET 文件:257.57 Kbytes Page:7 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
PowerMOSFET 文件:782.87 Kbytes Page:13 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | |||
PowerMOSFET 文件:782.87 Kbytes Page:13 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | |||
PowerMOSFET 文件:782.87 Kbytes Page:13 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | |||
PowerMOSFET 文件:782.87 Kbytes Page:13 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | |||
N-Channel100V(D-S)MOSFET 文件:979.63 Kbytes Page:7 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
PowerMOSFET 文件:782.87 Kbytes Page:13 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | |||
PowerMOSFET 文件:782.87 Kbytes Page:13 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | |||
1.3WattsAxialLeadedZenerDiodes VOLTAGERANGE:2.4-200VPOWER:1.3Watts Features ●CompleteVoltageRange2.4to200Volts ●Highpeakreversepowerdissipation ●Highreliability ●Lowleakagecurrent | SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司 | |||
Commercial3/4inch(19mm)Diameter,11/2and2wattWirewoundVariableResistor 文件:957.05 Kbytes Page:3 Pages | CTSCTS Electronic Components 西迪斯西迪斯公司 | |||
PCboardmountinganddirectinsertmountingavailable 文件:1.60394 Mbytes Page:3 Pages | HUAXINANHuaXinAn Electronics CO.,LTD 华兴安深圳市华兴安电子有限公司 | |||
3PhaseHi-TorqueDCBrushlessMotor 文件:125.59 Kbytes Page:1 Pages | MOTIONKING MotionKing Motor Industry Co.,Ltd. | |||
BrushlessDCMotor 文件:306.73 Kbytes Page:1 Pages | PROMOCO promoco-motors.com |
IRFR110产品属性
- 类型
描述
- 型号
IRFR110
- 功能描述
MOSFET N-Chan 100V 4.3 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS(导通)
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
VISHAY |
2020+ |
TO-252 |
8000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
FAIRCHILD/仙童 |
24+ |
TO 252 |
155816 |
明嘉莱只做原装正品现货 |
|||
IR |
1822+ |
TO-252 |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
|||
IR |
23+ |
TO252 |
8653 |
全新原装优势 |
|||
IR |
23+ |
TO-252 |
35890 |
||||
IR |
23+ |
TO-252 |
5000 |
原装正品,假一罚十 |
|||
IR |
21+ |
TO-252 |
5587 |
原装现货库存 |
|||
IR |
23+ |
TO252D-PA |
12300 |
全新原装真实库存含13点增值税票! |
|||
IOR |
22+23+ |
SO-252 |
39197 |
绝对原装正品全新进口深圳现货 |
|||
IR/VISHAY |
2022 |
SOT252 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
IRFR110规格书下载地址
IRFR110参数引脚图相关
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- IRFR120ZTRPBF
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- IRFR120ZPBF
- IRFR120TRPBF-CUTTAPE
- IRFR120TRPBF
- IRFR120PBF
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- IRFR120NTRLPBF-CUTTAPE
- IRFR120NTRLPBF
- IRFR120NPBF
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- IRFR110TRPBF-CUTTAPE
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- IRFR1010ZPBF
- IRFR024TRPBF-CUTTAPE
- IRFR024TRPBF
- IRFR024PBF
- IRFR024NTRPBF-CUTTAPE
- IRFR024NTRPBF
- IRFR024NTRLPBF
- IRFR024NPBF
- IRFR024
- IRFR020TRPBF
- IRFR020PBF
- IRFR020
- IRFR014TRPBF
- IRFR014PBF
- IRFR014
- IRFR012
- IRFR010PBF
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- IRFQ110
- IRFPS43N50KPBF
- IRFPS40N60KPBF
- IRFPS40N50LPBF
- IRFPS38N60LPBF
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- IRFPG40
- IRFPG30
- IRFPF50
- IRFPF40
- IRFPF30
- IRFPE50
- IRFPE40
- IRFPE30
- IRFPC60
- IRFPC50
- IRFPC48
- IRFPC40
- IRFPC30
IRFR110数据表相关新闻
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属性参数值 商品目录场效应管(MOSFET) 漏源电压(Vdss)200V 连续漏极电流(Id)13A 功率(Pd)110W 导通电阻(RDS(on)@Vgs,Id)235mΩ10V,8A 阈值电压(Vgs(th)@Id)5.5V250μA 类型N沟道
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IRFP460PBF原装现货供应0755-2889238913713856319QQ:2639752116
2021-3-12
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