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IRFR110TR价格
参考价格：￥1.7173
型号：IRFR110TRLPBF 品牌：Vishay 备注：这里有IRFR110TR多少钱，2024年最近7天走势，今日出价，今日竞价，IRFR110TR批发/采购报价，IRFR110TR行情走势销售排行榜，IRFR110TR报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFR110TR | PowerMOSFET DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Power | VishayVishay Siliconix 威世科技威世科技半导体 |  |   |
IRFR110TR | DynamicdV/dtRatingRepetitiveAvalancheRated DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | KERSEMI Kersemi Electronic Co., Ltd. |  | |
PowerMOSFET DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Power | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
DynamicdV/dtRatingRepetitiveAvalancheRated DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | KERSEMI Kersemi Electronic Co., Ltd. | | | |
DynamicdV/dtRatingRepetitiveAvalancheRated DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | KERSEMI Kersemi Electronic Co., Ltd. | | | |
PowerMOSFET DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Power | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
DynamicdV/dtRatingRepetitiveAvalancheRated DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | KERSEMI Kersemi Electronic Co., Ltd. | | | |
PowerMOSFET DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Power | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
PowerMOSFET DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Power | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
DynamicdV/dtRatingRepetitiveAvalancheRated DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | KERSEMI Kersemi Electronic Co., Ltd. | | | |
PowerMOSFET 文件：782.87 Kbytes Page：13 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
PowerMOSFET 文件：782.87 Kbytes Page：13 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
N-Channel100V(D-S)MOSFET 文件：979.63 Kbytes Page：7 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | | |
PowerMOSFET 文件：782.87 Kbytes Page：13 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
PowerMOSFET 文件：782.87 Kbytes Page：13 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
1.3WattsAxialLeadedZenerDiodes VOLTAGERANGE:2.4-200VPOWER:1.3Watts Features ●CompleteVoltageRange2.4to200Volts ●Highpeakreversepowerdissipation ●Highreliability ●Lowleakagecurrent | SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司 |  | | |
Commercial3/4inch(19mm)Diameter,11/2and2wattWirewoundVariableResistor 文件：957.05 Kbytes Page：3 Pages | CTSCTS Electronic Components 西迪斯西迪斯公司 |  | | |
PCboardmountinganddirectinsertmountingavailable 文件：1.60394 Mbytes Page：3 Pages | HUAXINANHuaXinAn Electronics CO.,LTD 华兴安深圳市华兴安电子有限公司 |  | | |
3PhaseHi-TorqueDCBrushlessMotor 文件：125.59 Kbytes Page：1 Pages | MOTIONKING MotionKing Motor Industry Co.,Ltd. |  | | |
BrushlessDCMotor 文件：306.73 Kbytes Page：1 Pages | PROMOCO promoco-motors.com |  | |
IRFR110TR产品属性
- 类型
描述
- 型号
IRFR110TR
- 功能描述
MOSFET N-Chan 100V 4.3 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
SMD-DPAK |
9888 |
专做原装正品,假一罚百! |
|||
VISHAY/威世 |
24+ |
TO-252 |
5715 |
只做原装 有挂有货 假一罚十 |
|||
VISHAY/威世 |
21+ |
TO-252 |
60000 |
原装正品进口现货 |
|||
IR/VISH |
23+ |
TO-252 |
8560 |
受权代理!全新原装现货特价热卖! |
|||
VISHAY |
23+ |
TO-252-3 (DPAK) |
14000 |
原装现货支持送检 |
|||
VISHAY/威世 |
23+ |
DPAK |
10000 |
公司只做原装正品 |
|||
IR |
05+ |
原厂原装 |
381 |
只做全新原装真实现货供应 |
|||
IR/VISHAY |
2016+ |
TO-252 |
6528 |
房间原装进口现货假一赔十 |
|||
ir |
dc03 |
原厂封装 |
1830 |
INSTOCK:2000/tr/dpak |
|||
Vishay Siliconix |
22+ |
TO2523 DPak (2 Leads + Tab) SC |
9000 |
原厂渠道,现货配单 |
IRFR110TR芯片相关品牌
IRFR110TR规格书下载地址
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IRFR110TR数据表相关新闻
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属性参数值 商品目录场效应管(MOSFET) 漏源电压(Vdss)200V 连续漏极电流(Id)13A 功率(Pd)110W 导通电阻(RDS(on)@Vgs，Id)235mΩ10V，8A 阈值电压(Vgs(th)@Id)5.5V250μA 类型N沟道
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2021-3-12
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