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IRFP450价格
参考价格:¥38.0561
型号:IRFP450 品牌:Vishay 备注:这里有IRFP450多少钱,2024年最近7天走势,今日出价,今日竞价,IRFP450批发/采购报价,IRFP450行情走势销售排行榜,IRFP450报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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IRFP450 | 14A,500V,0.400Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | ||
IRFP450 | N-CHANNEL500V-0.33ohm-14A-TO-247PowerMESH]MOSFET DESCRIPTION ThispowerMOSFETisdesignedusingthecompany’sconsolidatedstriplayout-basedMESHOVERLAYprocess.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvarioussources. ■TYPICALRDS(on)=0.33Ω ■EXTREMELYHIGHdv/dtCAPABILITY ■100AVALA | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | ||
IRFP450 | N-CHANNELPOWERMOSFETS
| SamsungSamsung Group 三星三星半导体 | ||
IRFP450 | StandardPowerMOSFET-N-ChannelEnhancementMode N-ChannelEnhancementMode Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Lowpackageinductance( | IXYS IXYS Integrated Circuits Division | ||
IRFP450 | PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247packageispreferredforcommercial-industrialapplicationswherehigherpowerlevelsprecludet | VishayVishay Siliconix 威世科技 | ||
IRFP450 | PowerMOSFET(Vdss=500V,Rds(on)=0.40ohm,Id=14A)
| IRFInternational Rectifier 英飞凌英飞凌科技公司 | ||
IRFP450 | iscN-ChannelMOSFETTransistor DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneralpurposeapplications. FEATURES •DrainCurrent–ID=14A@TC=25℃ •DrainSourceVoltage- :VDSS=500V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max) •FastSwitching | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ||
IRFP450 | N-CHANNEL500V-0.33Q-14A-TO-247PowerMESH??MOSFET DESCRIPTION ThispowerMOSFETisdesignedusingthecompanysconsolidatedstriplayout-basedMESHOVERLAY1process.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvarioussources. .TYPICALRDS(on)=0.33Ω .EXTREMELYHIGHdv/dtCAPABILITY .100AVALANC | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | ||
IRFP450 | N-CHANNELPowerMESHMOSFET 文件:410.95 Kbytes Page:7 Pages | ARTSCHIP ARTSCHIP ELECTRONICS CO.,LMITED. | ||
IRFP450 | PowerMOSFET 文件:883.54 Kbytes Page:11 Pages | VishayVishay Siliconix 威世科技 | ||
IRFP450 | SEMICONDUCTORS 文件:2.43533 Mbytes Page:31 Pages | etc2List of Unclassifed Manufacturers etc2未分类制造商 | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=14A@TC=25℃ ·DrainSourceVoltage:VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance:RDS(on)=0.4Ω(Max) ·FastSwitching | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
PowerMOSFET FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS) | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET(Vdss=500V,Rds(on)max=0.40ohm,Id=14A) Benefits ●LowGateChargeQgresultsinSimpleDriveRequirement ●ImprovedGate,AvalancheandDynamicdv/dtRuggedness ●FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ●EffectiveCossSpecified(SeeAN1001) Applications ●SwitchModePowerSupply(SMPS) ●Uninterr | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
PowerMOSFET FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS) | VishayVishay Siliconix 威世科技 | |||
HEXFET짰PowerMOSFET Benefits ●LowGateChargeQgresultsinSimpleDriveRequirement ●ImprovedGate,AvalancheandDynamicdv/dtRuggedness ●FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ●EffectiveCossSpecified(SeeAN1001) ●Lead-Free Applications ●SwitchModePowerSupply(SMPS | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
500VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredto minimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
PowerMOSFET(Vdss=500V,Rds(on)=0.40ohm,Id=14A) VDSS=500V RDS(on)=0.40Ω ID=14A Description ThisnewseriesofLowChargeHEXFETPowerMOSFETsachievesignificantlylowergatechargeoverconventionalMOSFETs.UtilizingadvancedHexfettechnologythedeviceimprovementsallowforreducedgatedriverequirements,fasterswitchingspeeds | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
PowerMOSFET VDS(V)500 RDS(on)(Ω)VGS=10V0.40 Qg(Max.)(nC)74 Qgs(nC)19 Qgd(nC)35 ConfigurationSingle DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargeoverconventionalMOSFETs.UtilizingadvancedPowerMOSFETtechnologythedeviceimprovement | VishayVishay Siliconix 威世科技 | |||
HEXFETPowerMOSFET VDSS=500V RDS(on)=0.40Ω ID=14A Description ThisnewseriesofLowChargeHEXFETPowerMOSFETsachievesignificantlylowergatechargeoverconventionalMOSFETs.UtilizingadvancedHexfettechnologythedeviceimprovementsallowforreducedgatedriverequirements,fasterswitchingspeeds | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
PowerMOSFET VDS(V)500 RDS(on)(Ω)VGS=10V0.40 Qg(Max.)(nC)74 Qgs(nC)19 Qgd(nC)35 ConfigurationSingle DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargeoverconventionalMOSFETs.UtilizingadvancedPowerMOSFETtechnologythedeviceimprovement | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-free APPLICATIONS •SwitchModePowerSupply(SMPS) •Uninter | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET(Vdss=500V,Rds(on)max=0.37ohm,Id=14A) Benefits ●LowGateChargeQgresultsinSimpleDriveRequirement ●ImprovedGate,AvalancheandDynamicdv/dtRuggedness ●FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ●EffectiveCossSpecified(SeeAN1001) Applications ●SwitchModePowerSupply(SMPS) ●Uninterrupt | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
HEXFET짰PowerMOSFET Benefits ●LowGateChargeQgresultsinSimpleDriveRequirement ●ImprovedGate,AvalancheandDynamicdv/dtRuggedness ●FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ●EffectiveCossSpecified(SeeAN1001) Applications ●SwitchModePowerSupply(SMPS) ●Uninterrupt | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
PowerMOSFET FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-free APPLICATIONS •SwitchModePowerSupply(SMPS) •Uninter | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247packageispreferredforcommercial-industrialapplicationswherehigherpowerlevelsprecludet | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET 文件:883.54 Kbytes Page:11 Pages | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET 文件:315.26 Kbytes Page:9 Pages | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET 文件:354.64 Kbytes Page:11 Pages | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET 文件:315.26 Kbytes Page:9 Pages | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET 文件:354.64 Kbytes Page:11 Pages | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET 文件:354.64 Kbytes Page:11 Pages | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET 文件:1.62434 Mbytes Page:11 Pages | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET 文件:1.62434 Mbytes Page:11 Pages | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET 文件:1.62434 Mbytes Page:11 Pages | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET 文件:883.54 Kbytes Page:11 Pages | VishayVishay Siliconix 威世科技 | |||
HEXFETPOWERMOSFET 文件:877.49 Kbytes Page:8 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
iscN-ChannelMOSFETTransistor 文件:67.82 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
HEADERSTRIPS.100??GridSolderTailDoubleRow 文件:129.169 Kbytes Page:1 Pages | MILL-MAX Mill-Max Manufacturing Corp. | |||
SupportingtheIntelCeleronprocessor 文件:1.3709 Mbytes Page:100 Pages | IntelIntel Corporation(Integrated Electronics Corporation) 英特尔英特尔(集成电子公司) | |||
CeleronMProcessoron65nmProcess 文件:1.93023 Mbytes Page:71 Pages | IntelIntel Corporation(Integrated Electronics Corporation) 英特尔英特尔(集成电子公司) | |||
Industrial15/16(24mm)diameter1/2wattcompositionvariableresistor 文件:65.84 Kbytes Page:2 Pages | CTSCTS Electronic Components 西迪斯西迪斯公司 | |||
Ultra-Ripple,Long-life,InverterGrade,RadialLeadedTheUltimateinRippleforPlug-in 文件:270 Kbytes Page:4 Pages | CDE Cornell Dubilier Electronics |
IRFP450产品属性
- 类型
描述
- 型号
IRFP450
- 功能描述
MOSFET N-Chan 500V 14 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS(导通)
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
VISHAY/威世 |
23+ |
TO-247 |
22000 |
原装现货假一罚十 |
|||
VISHYA |
22+ |
原厂封装 |
15850 |
原装正品,实单请联系 |
|||
FAIRCHILD |
2024+ |
TO-247 |
32560 |
原装优势绝对有货 |
|||
VISHAY/威世 |
21+ |
TO247 |
1326 |
全新、原装 |
|||
VISHAY |
23+ |
TO247 |
20540 |
保证进口原装现货假一赔十 |
|||
VISHAY/威世 |
21+ |
TO-247 |
60000 |
原装正品进口现货 |
|||
VISHAY/威世 |
22+ |
TO-247 |
517 |
只做原装进口 免费送样!! |
|||
VISHAY |
23+ |
TO-3P |
2800 |
原厂原装正品 |
|||
VISHAY |
2021+ |
TO-247AC |
9450 |
原装现货。 |
|||
IR |
22+ |
TO-247 |
8145 |
绝对原装现货,价格低,欢迎询购! |
IRFP450规格书下载地址
IRFP450参数引脚图相关
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- IRFP4868PBF
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- IRFP462
- IRFP460PBF
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- IRFP460BPBF
- IRFP460APBF
- IRFP460A
- IRFP460
- IRFP4568PBF
- IRFP453
- IRFP452
- IRFP451
- IRFP450PBF
- IRFP450LCPBF
- IRFP450APBF
- IRFP450A
- IRFP448PBF
- IRFP448
- IRFP4468PBF
- IRFP4410ZPBF
- IRFP440PBF
- IRFP440
- IRFP4368PBF
- IRFP4332PBF
- IRFP4321PBF
- IRFP4310ZPBF
- IRFP4232PBF
- IRFP4229PBF
- IRFP4227PBF
- IRFP4137PBF
- IRFP4127PBF
- IRFP4110PBF
- IRFP4004PBF
- IRFP3710PBF
- IRFP3703PBF
- IRFP362
- IRFP360PBF
- IRFP360LCPBF
- IRFP360
- IRFP354
- IRFP353
- IRFP352
- IRFP351
- IRFP350
- IRFP344
- IRFP340
- IRFP264
- IRFP260
- IRFP257
- IRFP256
- IRFP255
- IRFP254
- IRFP253
- IRFP252
- IRFP251
IRFP450数据表相关新闻
IRFP4468PBF原装现货
IRFP4468PBF原装正品
2021-8-10IRFP460PBF
IRFP460PBF
2021-5-20IRFP4227PBF
骏思创达科技有限公司
2021-4-22IRFP460 VISHAY/威世 TO-247 MOS(场效应管) 原装正品
原装正品现货供应0755-28892389/13713856319;QQ:2639752116;微信:13713856319;
2021-3-24IRFP4468
IRFP4468,当天发货0755-82732291全新原装现货或门市自取.
2020-9-20IRFP4568
IRFP4568,TO-247,当天发货0755-82732291全新原装现货或门市自取.
2020-9-20
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