IRFP450价格

参考价格:¥38.0561

型号:IRFP450 品牌:Vishay 备注:这里有IRFP450多少钱,2024年最近7天走势,今日出价,今日竞价,IRFP450批发/采购报价,IRFP450行情走势销售排行榜,IRFP450报价。
型号 功能描述 生产厂家&企业 LOGO 操作
IRFP450

14A,500V,0.400Ohm,N-ChannelPowerMOSFET

ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil
IRFP450

N-CHANNEL500V-0.33ohm-14A-TO-247PowerMESH]MOSFET

DESCRIPTION ThispowerMOSFETisdesignedusingthecompany’sconsolidatedstriplayout-basedMESHOVERLAYprocess.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvarioussources. ■TYPICALRDS(on)=0.33Ω ■EXTREMELYHIGHdv/dtCAPABILITY ■100AVALA

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS
IRFP450

N-CHANNELPOWERMOSFETS

SamsungSamsung Group

三星三星半导体

Samsung
IRFP450

StandardPowerMOSFET-N-ChannelEnhancementMode

N-ChannelEnhancementMode Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Lowpackageinductance(

IXYS

IXYS Integrated Circuits Division

IXYS
IRFP450

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247packageispreferredforcommercial-industrialapplicationswherehigherpowerlevelsprecludet

VishayVishay Siliconix

威世科技

Vishay
IRFP450

PowerMOSFET(Vdss=500V,Rds(on)=0.40ohm,Id=14A)

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRFP450

iscN-ChannelMOSFETTransistor

DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneralpurposeapplications. FEATURES •DrainCurrent–ID=14A@TC=25℃ •DrainSourceVoltage- :VDSS=500V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max) •FastSwitching

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
IRFP450

N-CHANNEL500V-0.33Q-14A-TO-247PowerMESH??MOSFET

DESCRIPTION ThispowerMOSFETisdesignedusingthecompanysconsolidatedstriplayout-basedMESHOVERLAY1process.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvarioussources. .TYPICALRDS(on)=0.33Ω .EXTREMELYHIGHdv/dtCAPABILITY .100AVALANC

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
IRFP450

N-CHANNELPowerMESHMOSFET

文件:410.95 Kbytes Page:7 Pages

ARTSCHIP

ARTSCHIP ELECTRONICS CO.,LMITED.

ARTSCHIP
IRFP450

PowerMOSFET

文件:883.54 Kbytes Page:11 Pages

VishayVishay Siliconix

威世科技

Vishay
IRFP450

SEMICONDUCTORS

文件:2.43533 Mbytes Page:31 Pages

etc2List of Unclassifed Manufacturers

etc2未分类制造商

etc2

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=14A@TC=25℃ ·DrainSourceVoltage:VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance:RDS(on)=0.4Ω(Max) ·FastSwitching

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

PowerMOSFET

FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS)

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET(Vdss=500V,Rds(on)max=0.40ohm,Id=14A)

Benefits ●LowGateChargeQgresultsinSimpleDriveRequirement ●ImprovedGate,AvalancheandDynamicdv/dtRuggedness ●FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ●EffectiveCossSpecified(SeeAN1001) Applications ●SwitchModePowerSupply(SMPS) ●Uninterr

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

PowerMOSFET

FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS)

VishayVishay Siliconix

威世科技

Vishay

HEXFET짰PowerMOSFET

Benefits ●LowGateChargeQgresultsinSimpleDriveRequirement ●ImprovedGate,AvalancheandDynamicdv/dtRuggedness ●FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ●EffectiveCossSpecified(SeeAN1001) ●Lead-Free Applications ●SwitchModePowerSupply(SMPS

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

500VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredto minimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

PowerMOSFET(Vdss=500V,Rds(on)=0.40ohm,Id=14A)

VDSS=500V RDS(on)=0.40Ω ID=14A Description ThisnewseriesofLowChargeHEXFETPowerMOSFETsachievesignificantlylowergatechargeoverconventionalMOSFETs.UtilizingadvancedHexfettechnologythedeviceimprovementsallowforreducedgatedriverequirements,fasterswitchingspeeds

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

PowerMOSFET

VDS(V)500 RDS(on)(Ω)VGS=10V0.40 Qg(Max.)(nC)74 Qgs(nC)19 Qgd(nC)35 ConfigurationSingle DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargeoverconventionalMOSFETs.UtilizingadvancedPowerMOSFETtechnologythedeviceimprovement

VishayVishay Siliconix

威世科技

Vishay

HEXFETPowerMOSFET

VDSS=500V RDS(on)=0.40Ω ID=14A Description ThisnewseriesofLowChargeHEXFETPowerMOSFETsachievesignificantlylowergatechargeoverconventionalMOSFETs.UtilizingadvancedHexfettechnologythedeviceimprovementsallowforreducedgatedriverequirements,fasterswitchingspeeds

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

PowerMOSFET

VDS(V)500 RDS(on)(Ω)VGS=10V0.40 Qg(Max.)(nC)74 Qgs(nC)19 Qgd(nC)35 ConfigurationSingle DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargeoverconventionalMOSFETs.UtilizingadvancedPowerMOSFETtechnologythedeviceimprovement

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-free APPLICATIONS •SwitchModePowerSupply(SMPS) •Uninter

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET(Vdss=500V,Rds(on)max=0.37ohm,Id=14A)

Benefits ●LowGateChargeQgresultsinSimpleDriveRequirement ●ImprovedGate,AvalancheandDynamicdv/dtRuggedness ●FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ●EffectiveCossSpecified(SeeAN1001) Applications ●SwitchModePowerSupply(SMPS) ●Uninterrupt

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

HEXFET짰PowerMOSFET

Benefits ●LowGateChargeQgresultsinSimpleDriveRequirement ●ImprovedGate,AvalancheandDynamicdv/dtRuggedness ●FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ●EffectiveCossSpecified(SeeAN1001) Applications ●SwitchModePowerSupply(SMPS) ●Uninterrupt

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

PowerMOSFET

FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-free APPLICATIONS •SwitchModePowerSupply(SMPS) •Uninter

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247packageispreferredforcommercial-industrialapplicationswherehigherpowerlevelsprecludet

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

文件:883.54 Kbytes Page:11 Pages

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

文件:315.26 Kbytes Page:9 Pages

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

文件:354.64 Kbytes Page:11 Pages

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

文件:315.26 Kbytes Page:9 Pages

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

文件:354.64 Kbytes Page:11 Pages

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

文件:354.64 Kbytes Page:11 Pages

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

文件:1.62434 Mbytes Page:11 Pages

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

文件:1.62434 Mbytes Page:11 Pages

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

文件:1.62434 Mbytes Page:11 Pages

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

文件:883.54 Kbytes Page:11 Pages

VishayVishay Siliconix

威世科技

Vishay

HEXFETPOWERMOSFET

文件:877.49 Kbytes Page:8 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

iscN-ChannelMOSFETTransistor

文件:67.82 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

HEADERSTRIPS.100??GridSolderTailDoubleRow

文件:129.169 Kbytes Page:1 Pages

MILL-MAX

Mill-Max Manufacturing Corp.

MILL-MAX

SupportingtheIntelCeleronprocessor

文件:1.3709 Mbytes Page:100 Pages

IntelIntel Corporation(Integrated Electronics Corporation)

英特尔英特尔(集成电子公司)

Intel

CeleronMProcessoron65nmProcess

文件:1.93023 Mbytes Page:71 Pages

IntelIntel Corporation(Integrated Electronics Corporation)

英特尔英特尔(集成电子公司)

Intel

Industrial15/16(24mm)diameter1/2wattcompositionvariableresistor

文件:65.84 Kbytes Page:2 Pages

CTSCTS Electronic Components

西迪斯西迪斯公司

CTS

Ultra-Ripple,Long-life,InverterGrade,RadialLeadedTheUltimateinRippleforPlug-in

文件:270 Kbytes Page:4 Pages

CDE

Cornell Dubilier Electronics

CDE

IRFP450产品属性

  • 类型

    描述

  • 型号

    IRFP450

  • 功能描述

    MOSFET N-Chan 500V 14 Amp

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2024-4-26 17:13:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
VISHAY/威世
23+
TO-247
22000
原装现货假一罚十
VISHYA
22+
原厂封装
15850
原装正品,实单请联系
FAIRCHILD
2024+
TO-247
32560
原装优势绝对有货
VISHAY/威世
21+
TO247
1326
全新、原装
VISHAY
23+
TO247
20540
保证进口原装现货假一赔十
VISHAY/威世
21+
TO-247
60000
原装正品进口现货
VISHAY/威世
22+
TO-247
517
只做原装进口 免费送样!!
VISHAY
23+
TO-3P
2800
原厂原装正品
VISHAY
2021+
TO-247AC
9450
原装现货。
IR
22+
TO-247
8145
绝对原装现货,价格低,欢迎询购!

IRFP450芯片相关品牌

  • ANACHIP
  • BOTHHAND
  • EUROQUARTZ
  • Honeywell
  • MOLEX8
  • MPS
  • nichicon
  • nxp
  • POWERBOX
  • RECTRON
  • TAI-TECH
  • Winbond

IRFP450数据表相关新闻