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IRFP45价格
参考价格:¥38.0561
型号:IRFP450 品牌:Vishay 备注:这里有IRFP45多少钱,2024年最近7天走势,今日出价,今日竞价,IRFP45批发/采购报价,IRFP45行情走势销售排行榜,IRFP45报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
N - CHANNEL 500V - 0.33ohm - 14A - TO-247 PowerMESH] MOSFET DESCRIPTION ThispowerMOSFETisdesignedusingthecompany’sconsolidatedstriplayout-basedMESHOVERLAYprocess.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvarioussources. ■TYPICALRDS(on)=0.33Ω ■EXTREMELYHIGHdv/dtCAPABILITY ■100AVALA | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
N-CHANNEL POWER MOSFETS
| SamsungSamsung Group 三星三星半导体 | |||
14A, 500V, 0.400 Ohm, N-Channel Power MOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | |||
Standard Power MOSFET - N-Channel Enhancement Mode N-ChannelEnhancementMode Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Lowpackageinductance( | IXYS IXYS Integrated Circuits Division | |||
Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247packageispreferredforcommercial-industrialapplicationswherehigherpowerlevelsprecludet | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Power MOSFET(Vdss=500V, Rds(on)=0.40ohm, Id=14A)
| IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
isc N-Channel MOSFET Transistor DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneralpurposeapplications. FEATURES •DrainCurrent–ID=14A@TC=25℃ •DrainSourceVoltage- :VDSS=500V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max) •FastSwitching | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
N - CHANNEL 500V - 0.33Q - 14A - TO-247 PowerMESH??MOSFET DESCRIPTION ThispowerMOSFETisdesignedusingthecompanysconsolidatedstriplayout-basedMESHOVERLAY1process.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvarioussources. .TYPICALRDS(on)=0.33Ω .EXTREMELYHIGHdv/dtCAPABILITY .100AVALANC | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
Power MOSFET(Vdss=500V, Rds(on)max=0.40ohm, Id=14A) Benefits ●LowGateChargeQgresultsinSimpleDriveRequirement ●ImprovedGate,AvalancheandDynamicdv/dtRuggedness ●FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ●EffectiveCossSpecified(SeeAN1001) Applications ●SwitchModePowerSupply(SMPS) ●Uninterr | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
Power MOSFET FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS) | VishayVishay Siliconix 威世科技威世科技半导体 | |||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent–ID=14A@TC=25℃ ·DrainSourceVoltage:VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance:RDS(on)=0.4Ω(Max) ·FastSwitching | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
HEXFET짰Power MOSFET Benefits ●LowGateChargeQgresultsinSimpleDriveRequirement ●ImprovedGate,AvalancheandDynamicdv/dtRuggedness ●FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ●EffectiveCossSpecified(SeeAN1001) ●Lead-Free Applications ●SwitchModePowerSupply(SMPS | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
Power MOSFET FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS) | VishayVishay Siliconix 威世科技威世科技半导体 | |||
500V N-Channel MOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredto minimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
Power MOSFET(Vdss=500V, Rds(on)=0.40ohm, Id=14A) VDSS=500V RDS(on)=0.40Ω ID=14A Description ThisnewseriesofLowChargeHEXFETPowerMOSFETsachievesignificantlylowergatechargeoverconventionalMOSFETs.UtilizingadvancedHexfettechnologythedeviceimprovementsallowforreducedgatedriverequirements,fasterswitchingspeeds | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
Power MOSFET VDS(V)500 RDS(on)(Ω)VGS=10V0.40 Qg(Max.)(nC)74 Qgs(nC)19 Qgd(nC)35 ConfigurationSingle DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargeoverconventionalMOSFETs.UtilizingadvancedPowerMOSFETtechnologythedeviceimprovement | VishayVishay Siliconix 威世科技威世科技半导体 | |||
HEXFET Power MOSFET VDSS=500V RDS(on)=0.40Ω ID=14A Description ThisnewseriesofLowChargeHEXFETPowerMOSFETsachievesignificantlylowergatechargeoverconventionalMOSFETs.UtilizingadvancedHexfettechnologythedeviceimprovementsallowforreducedgatedriverequirements,fasterswitchingspeeds | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
Power MOSFET VDS(V)500 RDS(on)(Ω)VGS=10V0.40 Qg(Max.)(nC)74 Qgs(nC)19 Qgd(nC)35 ConfigurationSingle DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargeoverconventionalMOSFETs.UtilizingadvancedPowerMOSFETtechnologythedeviceimprovement | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Power MOSFET(Vdss=500V, Rds(on)max=0.37ohm, Id=14A) Benefits ●LowGateChargeQgresultsinSimpleDriveRequirement ●ImprovedGate,AvalancheandDynamicdv/dtRuggedness ●FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ●EffectiveCossSpecified(SeeAN1001) Applications ●SwitchModePowerSupply(SMPS) ●Uninterrupt | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
Power MOSFET FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-free APPLICATIONS •SwitchModePowerSupply(SMPS) •Uninter | VishayVishay Siliconix 威世科技威世科技半导体 | |||
HEXFET짰Power MOSFET Benefits ●LowGateChargeQgresultsinSimpleDriveRequirement ●ImprovedGate,AvalancheandDynamicdv/dtRuggedness ●FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ●EffectiveCossSpecified(SeeAN1001) Applications ●SwitchModePowerSupply(SMPS) ●Uninterrupt | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
Power MOSFET FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-free APPLICATIONS •SwitchModePowerSupply(SMPS) •Uninter | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247packageispreferredforcommercial-industrialapplicationswherehigherpowerlevelsprecludet | VishayVishay Siliconix 威世科技威世科技半导体 | |||
N-CHANNEL POWER MOSFETS
| SamsungSamsung Group 三星三星半导体 | |||
N-CHANNEL POWER MOSFETS
| SamsungSamsung Group 三星三星半导体 | |||
N-CHANNEL POWER MOSFETS
| SamsungSamsung Group 三星三星半导体 | |||
N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=171A@TC=25℃ ·DrainSourceVoltage-VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=5.9mΩ(Max)@VGS=10V APPLICATIONS ·HighEfficiencySynchronousRectificationinSMPS ·UninterruptiblePowerSupply ·HighSpeedPowerSwitching ·HardSwitchedAnd | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
Power MOSFET 文件:883.54 Kbytes Page:11 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | |||
SEMICONDUCTORS 文件:2.43533 Mbytes Page:31 Pages | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | |||
N-CHANNEL PowerMESH MOSFET 文件:410.95 Kbytes Page:7 Pages | ARTSCHIP ARTSCHIP ELECTRONICS CO.,LMITED. | |||
Power MOSFET 文件:883.54 Kbytes Page:11 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Power MOSFET 文件:315.26 Kbytes Page:9 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Power MOSFET 文件:354.64 Kbytes Page:11 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Power MOSFET 文件:315.26 Kbytes Page:9 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Power MOSFET 文件:354.64 Kbytes Page:11 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Power MOSFET 文件:354.64 Kbytes Page:11 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Power MOSFET 文件:1.62434 Mbytes Page:11 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Power MOSFET 文件:1.62434 Mbytes Page:11 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Power MOSFET 文件:1.62434 Mbytes Page:11 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Power MOSFET 文件:883.54 Kbytes Page:11 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | |||
HEXFET POWER MOSFET 文件:877.49 Kbytes Page:8 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
isc N-Channel MOSFET Transistor 文件:67.82 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
isc N-Channel MOSFET Transistor 文件:67.82 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
isc N-Channel MOSFET Transistor 文件:170.65 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
isc N-Channel MOSFET Transistor 文件:67.79 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
isc N-Channel MOSFET Transistor 文件:170.22 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
isc N-Channel MOSFET Transistor 文件:67.82 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SEMICONDUCTORS 文件:2.43533 Mbytes Page:31 Pages | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | |||
isc N-Channel MOSFET Transistor 文件:170.82 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
N-Channel MOSFET Transistor 文件:336.26 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
HEXFETPower MOSFET 文件:325.31 Kbytes Page:8 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
High Efficiency Synchronous Rectification in SMPS 文件:325.31 Kbytes Page:8 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
Isc N-Channel MOSFET Transistor 文件:326.5 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
High Efficiency Synchronous Rectification in SMPS 文件:325.31 Kbytes Page:8 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
High Efficiency Synchronous Rectification in SMPS 文件:325.31 Kbytes Page:8 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |
IRFP45产品属性
- 类型
描述
- 型号
IRFP45
- 功能描述
MOSFET N-Chan 500V 14 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS(导通)
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
24+ |
TO 3P |
155709 |
明嘉莱只做原装正品现货 |
|||
INFINEON/英飞凌 |
22+ |
TO-247 |
1515 |
专营INFINEON/英飞凌全新原装进口正品 |
|||
VISHAY/威世 |
22+ |
TO-247 |
7500 |
只做原装正品假一赔十!正规渠道订货! |
|||
VISHAY/威世 |
21+ |
TO-247 |
60000 |
原装正品进口现货 |
|||
VISHAY |
23+ |
TO247 |
20540 |
保证进口原装现货假一赔十 |
|||
IR |
23+ |
TO247AC |
56000 |
||||
VISHAY/威世 |
2024+实力库存 |
TO-247 |
517 |
只做原厂渠道 可追溯货源 |
|||
VISHAY/威世 |
24+ |
TO-247 |
5715 |
只做原装 有挂有货 假一罚十 |
|||
IR |
2021+ |
TO-247 |
5980 |
只做原装,优势渠道,可全系列订货开增值税票 |
|||
IR |
22+ |
TO-247 |
8145 |
绝对原装现货,价格低,欢迎询购! |
IRFP45规格书下载地址
IRFP45参数引脚图相关
- l101
- l100
- ku波段
- kt250
- kse13005
- ks20
- km710
- ka5q1265rf
- k9f1208
- k310
- k2698
- k233
- k2055
- k2010
- jumper
- jtag接口
- jk触发器
- j111
- j108
- isd1420
- IRFPG40
- IRFPG30
- IRFPF50
- IRFPF40
- IRFPF30
- IRFPE50
- IRFPE40
- IRFPE30
- IRFPC60
- IRFPC50
- IRFPC48
- IRFPC40
- IRFPC30
- IRFP7718PBF
- IRFP7537PBF
- IRFP7530PBF
- IRFP7430PBF
- IRFP4868PBF
- IRFP4768PBF
- IRFP4710PBF
- IRFP470
- IRFP4668PBF
- IRFP462
- IRFP460PBF
- IRFP460LCPBF
- IRFP460BPBF
- IRFP460APBF
- IRFP460A
- IRFP460
- IRFP4568PBF
- IRFP453
- IRFP452
- IRFP451
- IRFP450PBF
- IRFP450LCPBF
- IRFP450APBF
- IRFP450A
- IRFP450
- IRFP448PBF
- IRFP448
- IRFP4468PBF
- IRFP4410ZPBF
- IRFP440PBF
- IRFP440
- IRFP4368PBF
- IRFP4332PBF
- IRFP4321PBF
- IRFP4310ZPBF
- IRFP4232PBF
- IRFP4229PBF
- IRFP4227PBF
- IRFP4137PBF
- IRFP4127PBF
- IRFP4110PBF
- IRFP4004PBF
- IRFP3710PBF
- IRFP3703PBF
- IRFP362
- IRFP360PBF
- IRFP360LCPBF
- IRFP360
- IRFP354
- IRFP353
- IRFP352
- IRFP351
- IRFP350
- IRFP344
- IRFP340
- IRFP264
- IRFP260
- IRFP257
- IRFP256
- IRFP255
- IRFP254
- IRFP253
- IRFP252
- IRFP251
IRFP45数据表相关新闻
IRFP4468PBF原装现货
IRFP4468PBF原装正品
2021-8-10IRFP460PBF
IRFP460PBF
2021-5-20IRFP4227PBF
骏思创达科技有限公司
2021-4-22IRFP460 VISHAY/威世 TO-247 MOS(场效应管) 原装正品
原装正品现货供应0755-28892389/13713856319;QQ:2639752116;微信:13713856319;
2021-3-24IRFP4468
IRFP4468,当天发货0755-82732291全新原装现货或门市自取.
2020-9-20IRFP4568
IRFP4568,TO-247,当天发货0755-82732291全新原装现货或门市自取.
2020-9-20
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