IRFP45价格

参考价格:¥38.0561

型号:IRFP450 品牌:Vishay 备注:这里有IRFP45多少钱,2024年最近7天走势,今日出价,今日竞价,IRFP45批发/采购报价,IRFP45行情走势销售排行榜,IRFP45报价。
型号 功能描述 生产厂家&企业 LOGO 操作

N - CHANNEL 500V - 0.33ohm - 14A - TO-247 PowerMESH] MOSFET

DESCRIPTION ThispowerMOSFETisdesignedusingthecompany’sconsolidatedstriplayout-basedMESHOVERLAYprocess.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvarioussources. ■TYPICALRDS(on)=0.33Ω ■EXTREMELYHIGHdv/dtCAPABILITY ■100AVALA

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

N-CHANNEL POWER MOSFETS

SamsungSamsung Group

三星三星半导体

Samsung

14A, 500V, 0.400 Ohm, N-Channel Power MOSFET

ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

Standard Power MOSFET - N-Channel Enhancement Mode

N-ChannelEnhancementMode Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Lowpackageinductance(

IXYS

IXYS Integrated Circuits Division

IXYS

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247packageispreferredforcommercial-industrialapplicationswherehigherpowerlevelsprecludet

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

Power MOSFET(Vdss=500V, Rds(on)=0.40ohm, Id=14A)

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

isc N-Channel MOSFET Transistor

DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneralpurposeapplications. FEATURES •DrainCurrent–ID=14A@TC=25℃ •DrainSourceVoltage- :VDSS=500V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max) •FastSwitching

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

N - CHANNEL 500V - 0.33Q - 14A - TO-247 PowerMESH??MOSFET

DESCRIPTION ThispowerMOSFETisdesignedusingthecompanysconsolidatedstriplayout-basedMESHOVERLAY1process.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvarioussources. .TYPICALRDS(on)=0.33Ω .EXTREMELYHIGHdv/dtCAPABILITY .100AVALANC

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

Power MOSFET(Vdss=500V, Rds(on)max=0.40ohm, Id=14A)

Benefits ●LowGateChargeQgresultsinSimpleDriveRequirement ●ImprovedGate,AvalancheandDynamicdv/dtRuggedness ●FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ●EffectiveCossSpecified(SeeAN1001) Applications ●SwitchModePowerSupply(SMPS) ●Uninterr

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

Power MOSFET

FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS)

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=14A@TC=25℃ ·DrainSourceVoltage:VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance:RDS(on)=0.4Ω(Max) ·FastSwitching

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

HEXFET짰Power MOSFET

Benefits ●LowGateChargeQgresultsinSimpleDriveRequirement ●ImprovedGate,AvalancheandDynamicdv/dtRuggedness ●FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ●EffectiveCossSpecified(SeeAN1001) ●Lead-Free Applications ●SwitchModePowerSupply(SMPS

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

Power MOSFET

FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS)

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

500V N-Channel MOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredto minimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

Power MOSFET(Vdss=500V, Rds(on)=0.40ohm, Id=14A)

VDSS=500V RDS(on)=0.40Ω ID=14A Description ThisnewseriesofLowChargeHEXFETPowerMOSFETsachievesignificantlylowergatechargeoverconventionalMOSFETs.UtilizingadvancedHexfettechnologythedeviceimprovementsallowforreducedgatedriverequirements,fasterswitchingspeeds

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

Power MOSFET

VDS(V)500 RDS(on)(Ω)VGS=10V0.40 Qg(Max.)(nC)74 Qgs(nC)19 Qgd(nC)35 ConfigurationSingle DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargeoverconventionalMOSFETs.UtilizingadvancedPowerMOSFETtechnologythedeviceimprovement

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

HEXFET Power MOSFET

VDSS=500V RDS(on)=0.40Ω ID=14A Description ThisnewseriesofLowChargeHEXFETPowerMOSFETsachievesignificantlylowergatechargeoverconventionalMOSFETs.UtilizingadvancedHexfettechnologythedeviceimprovementsallowforreducedgatedriverequirements,fasterswitchingspeeds

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

Power MOSFET

VDS(V)500 RDS(on)(Ω)VGS=10V0.40 Qg(Max.)(nC)74 Qgs(nC)19 Qgd(nC)35 ConfigurationSingle DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargeoverconventionalMOSFETs.UtilizingadvancedPowerMOSFETtechnologythedeviceimprovement

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

Power MOSFET(Vdss=500V, Rds(on)max=0.37ohm, Id=14A)

Benefits ●LowGateChargeQgresultsinSimpleDriveRequirement ●ImprovedGate,AvalancheandDynamicdv/dtRuggedness ●FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ●EffectiveCossSpecified(SeeAN1001) Applications ●SwitchModePowerSupply(SMPS) ●Uninterrupt

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

Power MOSFET

FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-free APPLICATIONS •SwitchModePowerSupply(SMPS) •Uninter

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

HEXFET짰Power MOSFET

Benefits ●LowGateChargeQgresultsinSimpleDriveRequirement ●ImprovedGate,AvalancheandDynamicdv/dtRuggedness ●FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ●EffectiveCossSpecified(SeeAN1001) Applications ●SwitchModePowerSupply(SMPS) ●Uninterrupt

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

Power MOSFET

FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-free APPLICATIONS •SwitchModePowerSupply(SMPS) •Uninter

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247packageispreferredforcommercial-industrialapplicationswherehigherpowerlevelsprecludet

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

N-CHANNEL POWER MOSFETS

SamsungSamsung Group

三星三星半导体

Samsung

N-CHANNEL POWER MOSFETS

SamsungSamsung Group

三星三星半导体

Samsung

N-CHANNEL POWER MOSFETS

SamsungSamsung Group

三星三星半导体

Samsung

N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=171A@TC=25℃ ·DrainSourceVoltage-VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=5.9mΩ(Max)@VGS=10V APPLICATIONS ·HighEfficiencySynchronousRectificationinSMPS ·UninterruptiblePowerSupply ·HighSpeedPowerSwitching ·HardSwitchedAnd

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

Power MOSFET

文件:883.54 Kbytes Page:11 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

SEMICONDUCTORS

文件:2.43533 Mbytes Page:31 Pages

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

etc2

N-CHANNEL PowerMESH MOSFET

文件:410.95 Kbytes Page:7 Pages

ARTSCHIP

ARTSCHIP ELECTRONICS CO.,LMITED.

ARTSCHIP

Power MOSFET

文件:883.54 Kbytes Page:11 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

Power MOSFET

文件:315.26 Kbytes Page:9 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

Power MOSFET

文件:354.64 Kbytes Page:11 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

Power MOSFET

文件:315.26 Kbytes Page:9 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

Power MOSFET

文件:354.64 Kbytes Page:11 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

Power MOSFET

文件:354.64 Kbytes Page:11 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

Power MOSFET

文件:1.62434 Mbytes Page:11 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

Power MOSFET

文件:1.62434 Mbytes Page:11 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

Power MOSFET

文件:1.62434 Mbytes Page:11 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

Power MOSFET

文件:883.54 Kbytes Page:11 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

HEXFET POWER MOSFET

文件:877.49 Kbytes Page:8 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

isc N-Channel MOSFET Transistor

文件:67.82 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

isc N-Channel MOSFET Transistor

文件:67.82 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

isc N-Channel MOSFET Transistor

文件:170.65 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

isc N-Channel MOSFET Transistor

文件:67.79 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

isc N-Channel MOSFET Transistor

文件:170.22 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

isc N-Channel MOSFET Transistor

文件:67.82 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SEMICONDUCTORS

文件:2.43533 Mbytes Page:31 Pages

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

etc2

isc N-Channel MOSFET Transistor

文件:170.82 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

N-Channel MOSFET Transistor

文件:336.26 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

HEXFETPower MOSFET

文件:325.31 Kbytes Page:8 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

High Efficiency Synchronous Rectification in SMPS

文件:325.31 Kbytes Page:8 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

Isc N-Channel MOSFET Transistor

文件:326.5 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

High Efficiency Synchronous Rectification in SMPS

文件:325.31 Kbytes Page:8 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

High Efficiency Synchronous Rectification in SMPS

文件:325.31 Kbytes Page:8 Pages

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

IRFP45产品属性

  • 类型

    描述

  • 型号

    IRFP45

  • 功能描述

    MOSFET N-Chan 500V 14 Amp

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2024-6-15 19:09:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
FAIRCHILD/仙童
24+
TO 3P
155709
明嘉莱只做原装正品现货
INFINEON/英飞凌
22+
TO-247
1515
专营INFINEON/英飞凌全新原装进口正品
VISHAY/威世
22+
TO-247
7500
只做原装正品假一赔十!正规渠道订货!
VISHAY/威世
21+
TO-247
60000
原装正品进口现货
VISHAY
23+
TO247
20540
保证进口原装现货假一赔十
IR
23+
TO247AC
56000
VISHAY/威世
2024+实力库存
TO-247
517
只做原厂渠道 可追溯货源
VISHAY/威世
24+
TO-247
5715
只做原装 有挂有货 假一罚十
IR
2021+
TO-247
5980
只做原装,优势渠道,可全系列订货开增值税票
IR
22+
TO-247
8145
绝对原装现货,价格低,欢迎询购!

IRFP45芯片相关品牌

  • BANNER
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  • NEL
  • ROHM
  • SANYO
  • SEOUL

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