IRFP14价格

参考价格:¥9.0744

型号:IRFP1405PBF 品牌:International 备注:这里有IRFP14多少钱,2024年最近7天走势,今日出价,今日竞价,IRFP14批发/采购报价,IRFP14行情走势销售排行榜,IRFP14报价。
型号 功能描述 生产厂家&企业 LOGO 操作

31A, 100V, 0.077 Ohm, N-Channel Power MOSFET

ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247ACpackageispreferredfor commercial-industrialapplicationswherehigherpowerlevelspreclud

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

iscN-Channel MOSFET Transistor

DESCRIPTION •Designedforapplicationsuchasswitchingregulators,switchingconvertors,motordriversandsoon. FEATURES •DrainCurrent–ID=31A@TC=25℃ •DrainSourceVoltage- :VDSS=100V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.077Ω(Max) •SOAispowerdissipati

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

Power MOSFET

FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Isolatedcentralmountinghole •175°Coperatingtemperature •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Not

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

Power MOSFET

FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Isolatedcentralmountinghole •175°Coperatingtemperature •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Not

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

AUTOMOTIVE MOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimp

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

Advanced Power MOSFET

FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■175°COperatingTemperature ■LowerLeakageCurrent:10μA(Max.)@VDS=100V ■LowerRDS(ON):0.041Ω(Typ.)

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

Power MOSFET(Vdss=100V, Rds(on)=0,052ohm, Id=33A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

33A, 100V, 0.040 Ohm, N-Channel Power MOSFET

Features •UltraLowOn-Resistance -rDS(ON)=0.040Ω,VGS=10V •SimulationModels -TemperatureCompensatedPSPICE™andSABER©ElectricalModels -SpiceandSABER©ThermalImpedanceModels -www.intersil.com •PeakCurrentvsPulseWidthCurve •UISRatingCurve

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

HEXFET Power MOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

Preferred for commercail-industrial applications where higher power levels preclude the use of TO-220 devices.

Description ThirdGenerationHEXFETsfromInternatioalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247packageispreferredforcommercial-industrialapplicationswherehigherpowerlevels

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247ACpackageispreferredfor commercial-industrialapplicationswherehigherpowerlevelspreclud

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

Power MOSFET

文件:1.78938 Mbytes Page:11 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

Power MOSFET

文件:1.76683 Mbytes Page:9 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

Power MOSFET

文件:1.76683 Mbytes Page:9 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

Power MOSFET

文件:1.78938 Mbytes Page:11 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

N-Channel MOSFET Transistor

文件:334.3 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

HEXFET짰 Power MOSFET

文件:222.97 Kbytes Page:10 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

Advanced Process Technology

文件:270.29 Kbytes Page:9 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

Advanced Process Technology

文件:270.29 Kbytes Page:9 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

isc N-Channel MOSFET Transistor

文件:277.59 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

N-Channel MOSFET Transistor

文件:334.21 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

ADVANCED PROCESS TECHNOLOGY

文件:353.99 Kbytes Page:9 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

N-Channel 100-V (D-S) MOSFET

文件:1.68131 Mbytes Page:7 Pages

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

ADVANCED PROCESS TECHNOLOGY

文件:353.99 Kbytes Page:9 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

Power MOSFET

文件:1.78938 Mbytes Page:11 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

isc N-Channel MOSFET Transistor

文件:69.39 Kbytes Page:3 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

isc N-Channel MOSFET Transistor

文件:69.38 Kbytes Page:3 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

isc N-Channel MOSFET Transistor

文件:69.39 Kbytes Page:3 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

isc N-Channel MOSFET Transistor

文件:69.39 Kbytes Page:3 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

IRFP14产品属性

  • 类型

    描述

  • 型号

    IRFP14

  • 功能描述

    MOSFET N-Chan 100V 31 Amp

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2024-6-14 22:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
2020+
TO-247
8000
只做自己库存,全新原装进口正品假一赔百,可开13%增
IR
24+
TO 247
160917
明嘉莱只做原装正品现货
FSC/ON
23+
原包装原封□□
840
原装进口特价供应QQ1304306553更多详细咨询库存
INFINEON/英飞凌
23+
TO-247
76000
IR英飞凌VISHAY专做 全新原装进口正品假一赔百,可开13
IR
23+
TO-247
11020
全新原装现货
21+
SOP
10000
优势代理渠道,原装正品,可全系列订货开增值税票
IR
23+
TO-247
35890
IR
22+
TO-247
9800
只做原装正品假一赔十!正规渠道订货!
IR
23+
TO-3P
5000
原装正品,假一罚十
ixys
2023+
TO-247
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品

IRFP14芯片相关品牌

  • BANNER
  • CHEMI-CON
  • CTMICRO
  • JUXING
  • LINER
  • MCC
  • Microchip
  • MINMAX
  • NEL
  • ROHM
  • SANYO
  • SEOUL

IRFP14数据表相关新闻