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IRFP价格
参考价格：￥2.8268
型号：IRFP044NPBF 品牌：INTERNATIONAL 备注：这里有IRFP多少钱，2024年最近7天走势，今日出价，今日竞价，IRFP批发/采购报价，IRFP行情走势销售排行榜，IRFP报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
Power MOSFET(Vdss=60V, Rds(on)=0.028ohm, Id=57A) Description ThirdGenerationHEXFETsfrominternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247packageispreferredforcommercial-industrialapplicationswherehigherpowerlevels | IRFInternational Rectifier 英飞凌英飞凌科技公司 |  |   | |
Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247packageispreferredforcommercial-industrialapplicationswherehigherpowerlevelsprecludet | VishayVishay Siliconix 威世科技 |  | | |
Power MOSFET(Vdss=55V, Rds(on)=0.020ohm, Id=53A) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
N-Channel MOSFET Transistor •DESCRITION •UltraLowOn-resistance •FastSwitching •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤20mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
Advanced Process Technology Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247packageispreferredforcommercial-industrialapplicationswherehigherpowerlevelsprecludet | VishayVishay Siliconix 威世科技 | | | |
Power MOSFET(Vdss=60V, Rds(on)=0.018ohm, Id=70A) Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ●Dynamicdv/dtRating ●IsolatedCentralMountingHole ●175°COperatingTemperature ●Ease | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247ACpackageispreferredforcommercial-industrialapplicationswherehigherpowerlevelspreclude | VishayVishay Siliconix 威世科技 | | | |
Power MOSFET FEATURES •DynamicdV/dtrating •Isolatedcentralmountinghole •175°Coperatingtemperature •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutp | VishayVishay Siliconix 威世科技 | | | |
Power MOSFET FEATURES •DynamicdV/dtrating •Isolatedcentralmountinghole •175°Coperatingtemperature •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutp | VishayVishay Siliconix 威世科技 | | | |
Power MOSFET(Vdss=55V, Rds(on)=0.016ohm, Id=64A) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
N-Channel MOSFET Transistor •DESCRITION •UltraLowOn-resistance •FastSwitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤16mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247ACpackageispreferredforcommercial-industrialapplicationswherehigherpowerlevelspreclude | VishayVishay Siliconix 威世科技 | | | |
Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247ACpackageispreferredforcommercial-industrialapplicationswherehigherpowerlevelspreclude | VishayVishay Siliconix 威世科技 | | | |
Power MOSFET FEATURES •DynamicdV/dtrating •Isolatedcentralmountinghole •175°Coperatingtemperature •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION ThirdgenerationpowerMOSFETsfrom | VishayVishay Siliconix 威世科技 | | | |
Power MOSFET FEATURES •DynamicdV/dtrating •Isolatedcentralmountinghole •175°Coperatingtemperature •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION ThirdgenerationpowerMOSFETsfrom | VishayVishay Siliconix 威世科技 | | | |
Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247ACpackageispreferredforcommercial-industrialapplicationswherehigherpowerlevelspreclude | VishayVishay Siliconix 威世科技 | | | |
Power MOSFET(Vdss=60V, Rds(on)=0.014ohm, Id=70*A) Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247packageispreferredforcommercial-industrialapplicationswherehigherpowerlevels | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247ACpackageispreferredforcommercial-industrialapplicationswherehigherpowerlevelspreclude | VishayVishay Siliconix 威世科技 | | | |
N-Channel MOSFET Transistor DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneralpurposeapplications. FEATURES •DrainCurrent–ID=70A@TC=25℃ •DrainSourceVoltage-:VDSS=60V(Min) •StaticDrain-SourceOn-Resistance:RDS(on)=0.014Ω(Max) •FastSwitching | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
Power MOSFET FEATURES •DynamicdV/dtrating •Isolatedcentralmountinghole •175°Coperatingtemperature •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesi | VishayVishay Siliconix 威世科技 | | | |
Power MOSFET FEATURES •DynamicdV/dtrating •Isolatedcentralmountinghole •175°Coperatingtemperature •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesi | VishayVishay Siliconix 威世科技 | | | |
Power MOSFET(Vdss=55V, Rds(on)=0.012ohm, Id=81A?? Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
N-Channel MOSFET Transistor •DESCRITION •UltraLowOn-resistance •FastSwitching •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤12mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
Advanced Process Technology Description TheTO-247packageispreferredforcommercial-industrialapplicationswherehigherpowerlevelsprecludetheuseofTO-220devices.TheTO-247issimilarbutsuperiortotheearlierTO-218packagebecauseofitsisolatedmountinghole. ●AdvancedProcessTechnology ●Dynamicdv/dt | KERSEMI Kersemi Electronic Co., Ltd. |  | | |
HEXFET Power MOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247ACpackageispreferredforcommercial-industrialapplicationswherehigherpowerlevelspreclude | VishayVishay Siliconix 威世科技 | | | |
isc N-Channel MOSFET Transistor •FEATURES •WithTO-247packaging •Uninterruptiblepowersupply •Highspeedswitching •Simpledriverequirements •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperationz •APPLICATIONS •Switchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
Power MOSFET(Vdss=60V, Rds(on)=9.0mohm, Id=93A?? Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
HEXFET짰 Power MOSFET ( VDSS = 60V , RDS(on) = 9.0m廓 , ID = 93A ) Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
Power MOSFET(Vdss=60V, Rds(on)=0.009ohm, Id=70*A) DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247packageispreferredforcommercial-industrialapplicationswherehigherpowerlevels | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247ACpackageispreferredforcommercial-industrialapplicationswherehigherpowerlevelspreclude | VishayVishay Siliconix 威世科技 | | | |
Power MOSFET FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Ultralowon-resistance •Verylowthermalresistance •Isolatedcentralmountinghole •175°Coperatingtemperature •Fastswitching •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?9991 | VishayVishay Siliconix 威世科技 | | | |
Power MOSFET FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Ultralowon-resistance •Verylowthermalresistance •Isolatedcentralmountinghole •175°Coperatingtemperature •Fastswitching •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?9991 | VishayVishay Siliconix 威世科技 | | | |
Power MOSFET(Vdss=55V, Rds(on)=0.008ohm, Id=110A?? FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,providesthedesigne | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
HEXFET Power MOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
HEXFET Power MOSFET DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247packageispreferredforcommercial-industrialapplicationswherehigherpowerlevels | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247ACpackageispreferredforcommercial-industrialapplicationswherehigherpowerlevelspreclude | VishayVishay Siliconix 威世科技 | | | |
Power MOSFET(Vdss=60V, Rds(on)=5.5mohm, Id=130A?? VDSS=60V RDS(on)=5.5mΩ ID=130A Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXF | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
HEXFET Power MOSFET Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
N-CHANNEL POWER MOSFETS
| SamsungSamsung Group 三星三星半导体 |  | | |
N-CHANNEL POWER MOSFETS
| SamsungSamsung Group 三星三星半导体 | | | |
N-CHANNEL POWER MOSFETS
| SamsungSamsung Group 三星三星半导体 | | | |
N-CHANNEL POWER MOSFETS
| SamsungSamsung Group 三星三星半导体 | | | |
31A, 100V, 0.077 Ohm, N-Channel Power MOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  | | |
Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247ACpackageispreferredfor commercial-industrialapplicationswherehigherpowerlevelspreclud | VishayVishay Siliconix 威世科技 | | | |
iscN-Channel MOSFET Transistor DESCRIPTION •Designedforapplicationsuchasswitchingregulators,switchingconvertors,motordriversandsoon. FEATURES •DrainCurrent–ID=31A@TC=25℃ •DrainSourceVoltage- :VDSS=100V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.077Ω(Max) •SOAispowerdissipati | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
Power MOSFET FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Isolatedcentralmountinghole •175°Coperatingtemperature •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Not | VishayVishay Siliconix 威世科技 | | | |
Power MOSFET FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Isolatedcentralmountinghole •175°Coperatingtemperature •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Not | VishayVishay Siliconix 威世科技 | | | |
AUTOMOTIVE MOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimp | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
Advanced Power MOSFET FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■175°COperatingTemperature ■LowerLeakageCurrent:10μA(Max.)@VDS=100V ■LowerRDS(ON):0.041Ω(Typ.) | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
Power MOSFET(Vdss=100V, Rds(on)=0,052ohm, Id=33A) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
33A, 100V, 0.040 Ohm, N-Channel Power MOSFET Features •UltraLowOn-Resistance -rDS(ON)=0.040Ω,VGS=10V •SimulationModels -TemperatureCompensatedPSPICE™andSABER©ElectricalModels -SpiceandSABER©ThermalImpedanceModels -www.intersil.com •PeakCurrentvsPulseWidthCurve •UISRatingCurve | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 |  | | |
HEXFET Power MOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
Preferred for commercail-industrial applications where higher power levels preclude the use of TO-220 devices. Description ThirdGenerationHEXFETsfromInternatioalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247packageispreferredforcommercial-industrialapplicationswherehigherpowerlevels | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247ACpackageispreferredfor commercial-industrialapplicationswherehigherpowerlevelspreclud | VishayVishay Siliconix 威世科技 | | | |
Advanced Power MOSFET FEATURES AvalancheRuggedTechnology RuggedGateOxideTechnology LowerInputCapacitance ImprovedGateCharge ExtendedSafeOperatingArea 175OperatingTemperature LowerLeakageCurrent:10A(Max.)@VDS=100V LowerRDS(ON):0.032Ω(Typ.) | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
Power MOSFET(Vdss=100V, Rds(on)=0.035W, Id=42A) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
HIGH VOLTAGE POWER MOSFET DIE FEATURES: ●Fastswitchingtimes ●LOWRDS(on)HDMOS™process ●Ruggedpolyslllcongatecellstructure ●Excellenthighvoltagestability ●Lowinputcapacitance ●Improvedhightemperaturereliability APPLICATIONS ●Switchingpowersupplies ●Motorcontrols ●AudioAmplifiers ●Inver | IXYS IXYS Integrated Circuits Division |  | | |
Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247ACpackageispreferredforcommercial-industrialapplicationswherehigherpowerlevelspreclude | VishayVishay Siliconix 威世科技 | | |
IRFP产品属性
- 类型
描述
- 型号
IRFP
- 制造商
International Rectifier
- 功能描述
Bulk
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
2016+ |
TO-247 |
6000 |
公司只做原装,假一罚十,可开17%增值税发票! |
|||
IR |
23+ |
TO-3P |
20000 |
全新原装假一赔十 |
|||
Infineon/英飞凌 |
21+ |
TO-247(AC) |
8800 |
公司只作原装正品 |
|||
IR |
2020+ |
TO-247 |
8000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
IR |
1950+ |
TO-247 |
9852 |
只做原装正品现货!或订货假一赔十! |
|||
IR |
1305+ |
TO-3P |
12000 |
公司特价原装现货 |
|||
IR |
22+ |
TO-247 |
89485 |
||||
IR |
24+ |
TO247 |
58000 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
IR |
24+ |
TO 3P |
161468 |
明嘉莱只做原装正品现货 |
|||
IR |
20+ |
TO-247 |
19570 |
原装优势主营型号-可开原型号增税票 |
IRFP芯片相关品牌
IRFP规格书下载地址
IRFP参数引脚图相关
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- l100
- ku波段
- kt250
- kse13005
- ks20
- km710
- ka5q1265rf
- k9f1208
- k310
- k2698
- k233
- k2055
- k2010
- jumper
- jtag接口
- jk触发器
- j111
- j108
- isd1420
- IRFP251
- IRFP250
- IRFP247
- IRFP246
- IRFP245
- IRFP244
- IRFP240
- IRFP21N60LPBF
- IRFP17N50LPBF
- IRFP153
- IRFP152
- IRFP151
- IRFP150PBF
- IRFP150NPBF
- IRFP150MPBF
- IRFP150A
- IRFP150
- IRFP140PBF
- IRFP140NPBF
- IRFP1405PBF
- IRFP140
- IRFP133
- IRFP132
- IRFP131
- IRFP130
- IRFP064PBF
- IRFP064NPBF
- IRFP064
- IRFP054PBF
- IRFP054NPBF
- IRFP054
- IRFP048RPBF
- IRFP048PBF
- IRFP048NPBF
- IRFP048
- IRFP044NPBF
- IRFP044
- IRFNL210BTA_FP001
- IRFNG50
- IRFNG40
- IRFN450
- IRFN440
- IRFN350
- IRFN340
- IRFN250
- IRFN240
- IRFN150
- IRFN140
- IRFN054
- IRFN044
- IRFML8244TRPBF
- IRFMG50SCX
- IRFMG50
- IRFMG40
- IRFM9240
- IRFM540
- IRFM460
- IRFM450
- IRFM440
- IRFM360
- IRFM350
- IRFM250
- IRFM240
- IRFM120ATF
- IRFL9110TRPBF
- IRFL9110PBF
- IRFL9014TRPBF-CUTTAPE
- IRFL9014TRPBF
- IRFL9014PBF
- IRFL9014
- IRFL4315TRPBF
- IRFL4315PBF
- IRFL4310TRPBF
- IRFL4310TR
- IRFL4310PBF
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IRFM064，当天发货0755-82732291全新原装现货或门市自取.
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IRFM360原装正品热卖，价格优惠！欢迎新老客户来电咨询采购！
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IRFM350原装正品现货热卖，欢迎新老客户来电咨询采购！
2019-11-4
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