位置：首页 > IC中文资料第3389页 > IRFBC30
IRFBC30价格
参考价格：￥21.3201
型号：IRFBC30 品牌：Vishay 备注：这里有IRFBC30多少钱，2024年最近7天走势，今日出价，今日竞价，IRFBC30批发/采购报价，IRFBC30行情走势销售排行榜，IRFBC30报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFBC30 | iscN-Channel MOSFET Transistor DESCRIPTION •Highcurrent,highspeedswitching •Switchmodepowersupplies •DC-ACconvertersforweldingequipmentandUninterruptiblepowersuppliesandmotorDriver. FEATURES •LowerInputCapacitance •ImprovedGateCharge •ExtendedSafeOperatingArea •RuggedGateOxideTechnolog | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  |   |
IRFBC30 | N - CHANNEL 600V - 1.8 ohm - 3.6A - TO-220 PowerMESH]II MOSFET DESCRIPTION ThePowerMESH™ΙΙistheevolutionofthefirstgenerationofMESHOVERLAY™.ThelayoutrefinementsintroducedgreatlyimprovetheRon*areafigureofmeritwhilekeepingthedeviceattheleadingedgeforwhatconcernsswitchingspeed,gatechargeandruggedness. ■TYPICALRDS(on)= | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 |  | |
IRFBC30 | Power MOSFET(Vdss=600V, Rds(on)=2.2ohm, Id=3.6A)
| IRFInternational Rectifier 英飞凌英飞凌科技公司 |  | |
IRFBC30 | Power MOSFET 文件：780.72 Kbytes Page：8 Pages | VishayVishay Siliconix 威世科技 |  | |
IRFBC30 | SEMICONDUCTORS 文件：2.43533 Mbytes Page：31 Pages | etc2List of Unclassifed Manufacturers etc2未分类制造商 |  | |
IRFBC30 | Power MOSFET 文件：943.73 Kbytes Page：9 Pages | VishayVishay Siliconix 威世科技 | | |
Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A) Benefits ●LowGateChargeQgresultsinSimpleDriveRequirement ●ImprovedGate,Avalancheanddynamicdv/dtRuggedness ●FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ●EffectiveCossspecified(SeeAN1001) Applications ●SwitchModePowerSupply(SMPS) ●Uninterrupt | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
Power MOSFETs FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •LowGateChargeQgResultsinSimpleDrive Requirement •ImprovedGate,AvalancheandDynamicdV/dt Ruggedness •FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent •EffectiveCossSpecified •ComplianttoRo | VishayVishay Siliconix 威世科技 | | | |
Power MOSFETs FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •LowGateChargeQgResultsinSimpleDrive Requirement •ImprovedGate,AvalancheandDynamicdV/dt Ruggedness •FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent •EffectiveCossSpecified •ComplianttoRo | VishayVishay Siliconix 威世科技 | | | |
HEXFET짰 Power MOSFET Benefits ●LowGateChargeQgresultsinSimpleDriveRequirement ●ImprovedGate,Avalancheanddynamicdv/dtRuggedness ●FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ●EffectiveCossspecified(SeeAN1001) Applications ●SwitchModePowerSupply(SMPS) ●Uninterrupt | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
Power MOSFETs FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •LowGateChargeQgResultsinSimpleDrive Requirement •ImprovedGate,AvalancheandDynamicdV/dt Ruggedness •FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent •EffectiveCossSpecified •ComplianttoRo | VishayVishay Siliconix 威世科技 | | | |
Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A) Benefits ●LowGateChargeQgresultsinSimpleDriveRequirement ●ImprovedGate,Avalancheanddynamicdv/dtRuggedness ●FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ●EffectiveCossspecified(SeeAN1001) Applications ●SwitchModePowerSupply(SMPS) ●Uninterrupt | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
Power MOSFETs FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •LowGateChargeQgResultsinSimpleDrive Requirement •ImprovedGate,AvalancheandDynamicdV/dt Ruggedness •FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent •EffectiveCossSpecified •ComplianttoRo | VishayVishay Siliconix 威世科技 | | | |
Power MOSFETs FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •LowGateChargeQgResultsinSimpleDrive Requirement •ImprovedGate,AvalancheandDynamicdV/dt Ruggedness •FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent •EffectiveCossSpecified •ComplianttoRo | VishayVishay Siliconix 威世科技 | | | |
Power MOSFETs FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •LowGateChargeQgResultsinSimpleDrive Requirement •ImprovedGate,AvalancheandDynamicdV/dt Ruggedness •FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent •EffectiveCossSpecified •ComplianttoRo | VishayVishay Siliconix 威世科技 | | | |
Power MOSFET(Vdss=600V, Rds(on)=2.2ohm, Id=3.6A) Description ThirdgenerationHEXFETsfrominternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PakisasurfacemountpowerpackagecapableoftheaccommodatingdiesizesuptoHEX-4.It | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A) Benefits ●LowGateChargeQgresultsinSimpleDriveRequirement ●ImprovedGate,Avalancheanddynamicdv/dtRuggedness ●FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ●EffectiveCossspecified(SeeAN1001) Applications ●SwitchModePowerSupply(SMPS) ●Uninterrupt | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
Power MOSFET FEATURES •Surface-mount(IRFBC30S,SiHFBC30S) •Low-profilethrough-hole(IRFBC30L,SiHFBC30L) •Availableintapeandreel(IRFBC30S, SiHFBC30S) •DynamicdV/dtrating •150°Coperatingtemperature •Fastswitching •Fullyavalancherated •Materialcategorization:fordefinitionsofc | VishayVishay Siliconix 威世科技 | | | |
Power MOSFET(Vdss=600V, Rds(on)=2.2ohm, Id=3.6A) Description ThirdgenerationHEXFETsfrominternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PakisasurfacemountpowerpackagecapableoftheaccommodatingdiesizesuptoHEX-4.It | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
Power MOSFET FEATURES •Surface-mount(IRFBC30S,SiHFBC30S) •Low-profilethrough-hole(IRFBC30L,SiHFBC30L) •Availableintapeandreel(IRFBC30S, SiHFBC30S) •DynamicdV/dtrating •150°Coperatingtemperature •Fastswitching •Fullyavalancherated •Materialcategorization:fordefinitionsofc | VishayVishay Siliconix 威世科技 | | | |
Power MOSFET FEATURES •Surface-mount(IRFBC30S,SiHFBC30S) •Low-profilethrough-hole(IRFBC30L,SiHFBC30L) •Availableintapeandreel(IRFBC30S, SiHFBC30S) •DynamicdV/dtrating •150°Coperatingtemperature •Fastswitching •Fullyavalancherated •Materialcategorization:fordefinitionsofc | VishayVishay Siliconix 威世科技 | | | |
Power MOSFET 文件：943.73 Kbytes Page：9 Pages | VishayVishay Siliconix 威世科技 | | | |
Power MOSFET 文件：155.85 Kbytes Page：8 Pages | VishayVishay Siliconix 威世科技 | | | |
iscN-Channel MOSFET Transistor 文件：328.78 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
Power MOSFET 文件：179.3 Kbytes Page：9 Pages | VishayVishay Siliconix 威世科技 | | | |
Power MOSFET 文件：850.72 Kbytes Page：8 Pages | VishayVishay Siliconix 威世科技 | | | |
Power MOSFET 文件：850.72 Kbytes Page：8 Pages | VishayVishay Siliconix 威世科技 | | | |
Power MOSFET 文件：275.86 Kbytes Page：12 Pages | VishayVishay Siliconix 威世科技 | | | |
Power MOSFET 文件：155.85 Kbytes Page：8 Pages | VishayVishay Siliconix 威世科技 | | | |
Power MOSFET 文件：179.3 Kbytes Page：9 Pages | VishayVishay Siliconix 威世科技 | | | |
Power MOSFET 文件：179.3 Kbytes Page：9 Pages | VishayVishay Siliconix 威世科技 | | | |
Power MOSFET 文件：850.72 Kbytes Page：8 Pages | VishayVishay Siliconix 威世科技 | | | |
Power MOSFET 文件：275.86 Kbytes Page：12 Pages | VishayVishay Siliconix 威世科技 | | | |
Power MOSFET 文件：275.86 Kbytes Page：12 Pages | VishayVishay Siliconix 威世科技 | | | |
Power MOSFET 文件：850.72 Kbytes Page：8 Pages | VishayVishay Siliconix 威世科技 | | | |
Power MOSFET 文件：275.86 Kbytes Page：12 Pages | VishayVishay Siliconix 威世科技 | | | |
Power MOSFET 文件：850.72 Kbytes Page：8 Pages | VishayVishay Siliconix 威世科技 | | | |
Power MOSFET 文件：850.72 Kbytes Page：8 Pages | VishayVishay Siliconix 威世科技 | | | |
Power MOSFET 文件：275.86 Kbytes Page：12 Pages | VishayVishay Siliconix 威世科技 | | | |
Power MOSFET 文件：850.72 Kbytes Page：8 Pages | VishayVishay Siliconix 威世科技 | | | |
Power MOSFET 文件：850.72 Kbytes Page：8 Pages | VishayVishay Siliconix 威世科技 | | | |
Power MOSFET 文件：275.86 Kbytes Page：12 Pages | VishayVishay Siliconix 威世科技 | | | |
Power MOSFET 文件：961.84 Kbytes Page：8 Pages | VishayVishay Siliconix 威世科技 | | | |
Power MOSFET 文件：961.84 Kbytes Page：8 Pages | VishayVishay Siliconix 威世科技 | | | |
Power MOSFET 文件：780.72 Kbytes Page：8 Pages | VishayVishay Siliconix 威世科技 | | | |
HEXFET Power MOSFET 文件：1.22876 Mbytes Page：8 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
N-Channel 650 V (D-S) MOSFET 文件：2.0425 Mbytes Page：9 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | | |
Power MOSFET 文件：943.73 Kbytes Page：9 Pages | VishayVishay Siliconix 威世科技 | | | |
Power MOSFET 文件：943.73 Kbytes Page：9 Pages | VishayVishay Siliconix 威世科技 | | | |
Power MOSFET 文件：961.84 Kbytes Page：8 Pages | VishayVishay Siliconix 威世科技 | | | |
Power MOSFET 文件：961.84 Kbytes Page：8 Pages | VishayVishay Siliconix 威世科技 | | | |
Power MOSFET 文件：961.84 Kbytes Page：8 Pages | VishayVishay Siliconix 威世科技 | | |
IRFBC30产品属性
- 类型
描述
- 型号
IRFBC30
- 功能描述
MOSFET N-Chan 600V 3.6 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY |
22+ |
原厂封装 |
15850 |
原装正品，实单请联系 |
|||
VISHAY |
21+ |
TO-220 |
30000 |
全新原装公司现货
|
|||
IR/VISHAY |
23+ |
TO-263 |
12300 |
全新原装真实库存含13点增值税票! |
|||
2017+ |
TO220 |
6528 |
只做原装正品假一赔十! |
||||
23+ |
N/A |
46590 |
正品授权货源可靠 |
||||
IR |
23+ |
TO-220 |
8890 |
价格优势/原装现货/客户至上/欢迎广大客户来电查询 |
|||
IR |
21+ |
TO-220 |
6880 |
只做原装,质量保证 |
|||
VISHAY/威世 |
24+ |
TO-220 |
5715 |
只做原装 有挂有货 假一罚十 |
|||
Vishay Siliconix |
24+ |
D2PAK(TO-263) |
30000 |
晶体管-分立半导体产品-原装正品 |
|||
VISHAY/威世 |
21+ |
TO-220 |
6000 |
原装正品 |
IRFBC30芯片相关品牌
IRFBC30规格书下载地址
IRFBC30参数引脚图相关
- l101
- l100
- ku波段
- kt250
- kse13005
- ks20
- km710
- ka5q1265rf
- k9f1208
- k310
- k2698
- k233
- k2055
- k2010
- jumper
- jtag接口
- jk触发器
- j111
- j108
- isd1420
- IRFD110
- IRFD024
- IRFD022
- IRFD020
- IRFD014
- IRFD012
- IRFD010
- IRFC450
- IRFC350
- IRFC250
- IRFC240
- IRFC150
- IRFBG30
- IRFBG20
- IRFBF30
- IRFBF20
- IRFBE30STRLPBF
- IRFBE30SPBF
- IRFBE30PBF
- IRFBE30LPBF
- IRFBE30
- IRFBE20PBF
- IRFBE20
- IRFBC42
- IRFBC40STRLPBF
- IRFBC40PBF
- IRFBC40LCPBF
- IRFBC40ASTRLPBF
- IRFBC40ASPBF
- IRFBC40APBF
- IRFBC40
- IRFBC30STRLPBF
- IRFBC30SPBF
- IRFBC30PBF
- IRFBC30ASPBF
- IRFBC30APBF
- IRFBC30ALPBF
- IRFBC30A
- IRFBC20SPBF
- IRFBC20PBF
- IRFBC20
- IRFBA90N20DPBF
- IRFBA1405PPBF
- IRFBA1404PPBF
- IRFB9N65APBF
- IRFB9N60APBF
- IRFB812PBF
- IRFB812
- IRFB7787PBF
- IRFB7746PBF
- IRFB7740PBF
- IRFB7734PBF
- IRFB7730PBF
- IRFB7546PBF
- IRFB7545PBF
- IRFB7540PBF
- IRFB7537PBF
- IRFB7534PBF
- IRFB7530PBF
- IRFB260
- IRFAG50
- IRFAG40
- IRFAG30
- IRFAF50
- IRFAF40
- IRFAF30
- IRFAE50
- IRFAE40
- IRFAE30
- IRFAC42
- IRFAC40
- IRFAC30
- IRF9Z34
- IRF9Z32
- IRF9Z30
- IRF9Z24
- IRF9Z22
IRFBC30数据表相关新闻
IRFB7534PBF
原装
2023-3-27IRFB7440PBF
www.hfxcom.com
2021-12-20IRFF130 N沟道场效应管 代理渠道，进口原装。
IRFF130 代理渠道，进口原装。
2020-11-16IRFB7440PBF
深圳市科恒伟业电子有限公司深圳市福田区华强北振兴路101号华匀大厦2栋5楼516网站http://www.kehengweiyedz.cn网站http://www.kehengweiye.com邮箱：yulin522@126.com0755-8320005015817287769柯先生
2020-4-18IRFF433，IRFP462，IRFP9140，IRFP9140S2424，IRFP9141，IRFP9143，IRFP9241，IRFP9242，IRFPC40，IRFPC42，IRFPG42，IRFF9222，IRFF9122，IRFF9123，IRFF9130
IRFF433，IRFP462，IRFP9140，IRFP9140S2424，IRFP9141，IRFP9143，IRFP9241，IRFP9242，IRFPC40，IRFPC42，IRFPG42，IRFF9222，IRFF9122，IRFF9123，IRFF9130
2019-12-17IRFH5220TRPBF公司大量全新原装现货/随时可以发货
瀚佳科技(深圳)有限公司专业为工厂一站式BOM配单服务
2019-5-5
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
