型号 功能描述 生产厂家&企业 LOGO 操作
IRF9Z24L

PowerMOSFET(Vdss=-60V,Rds(on)=0.28ohm,Id=-11A)

Description ThirdGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF9Z24L

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwit

VishayVishay Siliconix

威世科技

Vishay
IRF9Z24L

AdvancedProcessTechnology

Description TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipationlevelstoapproximately50watts.ThelowthermalresistanceandlowpackagecostoftheTO-220contributetoitswideacceptancethroughouttheindustry. ●AdvancedProcessTe

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipa

VishayVishay Siliconix

威世科技

Vishay

POWERMOSFET

Description ThirdGenerationHEXFETsInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissi

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

P-CHANNELPOWERMOSFETs

FEATURES •LowerRDS(ON) •Improvedinductiveruggedness •Fastswitchingtimes •Ruggedpolysilicongatecellstructure •Lowerinputcapacitance •Extendedsafeoperatingarea •Improvedhightmeperaturereliability

SamsungSamsung Group

三星三星半导体

Samsung

PowerMOSFET

文件:277.52 Kbytes Page:9 Pages

VishayVishay Siliconix

威世科技

Vishay

iscN-ChannelMOSFETTransistor

文件:280.77 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwit

VishayVishay Siliconix

威世科技

Vishay

IRF9Z24L产品属性

  • 类型

    描述

  • 型号

    IRF9Z24L

  • 制造商

    IRF

  • 制造商全称

    International Rectifier

  • 功能描述

    Power MOSFET(Vdss=-60V, Rds(on)=0.28ohm, Id=-11A)

更新时间:2024-5-30 11:38:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
23+
TO-262
8600
全新原装现货
IR
1822+
TO-262
9852
只做原装正品假一赔十为客户做到零风险!!
IR
2020+
TO-220
32630
公司代理品牌,原装现货超低价清仓!
IR
21+
TO-220
12588
原装正品,自己库存 假一罚十
IR/VISHAY
20+
TO262
36900
原装优势主营型号-可开原型号增税票
IR
2020+
TO-220
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
IR
21+ROHS
SOT-252
688888
原厂授权一级代理,专业海外优势订货,价格优势、品种
INFINEON/IR
19+
TO-220
74807
原厂代理渠道,每一颗芯片都可追溯原厂;
IOR
22+
TO-220
2987
绝对全新原装现货供应!
IR
2015+
TO-262
12500
全新原装,现货库存长期供应

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