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型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
IRF9Z24L | PowerMOSFET(Vdss=-60V,Rds(on)=0.28ohm,Id=-11A) Description ThirdGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRFInternational Rectifier 英飞凌英飞凌科技公司 | ||
IRF9Z24L | PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwit | VishayVishay Siliconix 威世科技 | ||
IRF9Z24L | AdvancedProcessTechnology Description TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipationlevelstoapproximately50watts.ThelowthermalresistanceandlowpackagecostoftheTO-220contributetoitswideacceptancethroughouttheindustry. ●AdvancedProcessTe | KERSEMI Kersemi Electronic Co., Ltd. | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipa | VishayVishay Siliconix 威世科技 | |||
POWERMOSFET Description ThirdGenerationHEXFETsInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissi | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
P-CHANNELPOWERMOSFETs FEATURES •LowerRDS(ON) •Improvedinductiveruggedness •Fastswitchingtimes •Ruggedpolysilicongatecellstructure •Lowerinputcapacitance •Extendedsafeoperatingarea •Improvedhightmeperaturereliability | SamsungSamsung Group 三星三星半导体 | |||
PowerMOSFET 文件:277.52 Kbytes Page:9 Pages | VishayVishay Siliconix 威世科技 | |||
iscN-ChannelMOSFETTransistor 文件:280.77 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwit | VishayVishay Siliconix 威世科技 |
IRF9Z24L产品属性
- 类型
描述
- 型号
IRF9Z24L
- 制造商
IRF
- 制造商全称
International Rectifier
- 功能描述
Power MOSFET(Vdss=-60V, Rds(on)=0.28ohm, Id=-11A)
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
23+ |
TO-262 |
8600 |
全新原装现货 |
|||
IR |
1822+ |
TO-262 |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
|||
IR |
2020+ |
TO-220 |
32630 |
公司代理品牌,原装现货超低价清仓! |
|||
IR |
21+ |
TO-220 |
12588 |
原装正品,自己库存 假一罚十 |
|||
IR/VISHAY |
20+ |
TO262 |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
IR |
2020+ |
TO-220 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
IR |
21+ROHS |
SOT-252 |
688888 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
INFINEON/IR |
19+ |
TO-220 |
74807 |
原厂代理渠道,每一颗芯片都可追溯原厂; |
|||
IOR |
22+ |
TO-220 |
2987 |
绝对全新原装现货供应! |
|||
IR |
2015+ |
TO-262 |
12500 |
全新原装,现货库存长期供应 |
IRF9Z24L规格书下载地址
IRF9Z24L参数引脚图相关
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IRF9Z24L数据表相关新闻
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深圳市科恒伟业电子有限公司深圳市福田区华强北振兴路101号华匀大厦2栋5楼516网站http://www.kehengweiyedz.cn网站http://www.kehengweiye.com邮箱:yulin522@126.com0755-8320005015817287769柯先生
2020-4-18IRFB3607PBF
深圳市科恒伟业电子有限公司深圳市福田区华强北振兴路101号华匀大厦2栋5楼516网站http://www.kehengweiyedz.cn网站http://www.kehengweiye.com邮箱:yulin522@126.com0755-8320005015817287769柯先生
2020-4-18
DdatasheetPDF页码索引
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