HEXFETPowerMOSFET

Benefits ●VeryLowRDS(on)at4.5VVGS ●Ultra-LowGateImpedance ●FullyCharacterizedAvalancheVoltageandCurrent ●100TestedforRG Applications ●HighFrequencyPoint-of-LoadSynchronousBuckConverterforApplicationsinNetworking&ComputingSystems.

N-ChannelEnhancementMOSFET

■Features ●VDS(V)=30V ●ID=16A(VGS=10V) ●RDS(ON)

HEXFET

PowerMOSFET

文件：294.49 Kbytes Page：10 Pages

HighFrequencyPoint-of-LoadSynchronousBuckConverterforApplicationsinNetworking&ComputingSystems

文件：275.78 Kbytes Page：10 Pages

HighFrequencyPoint-of-LoadSynchronousBuckConverter

文件：275.78 Kbytes Page：10 Pages

Ultra-LowGateImpedance

文件：275.78 Kbytes Page：10 Pages

HighFrequencyPoint-of-LoadSynchronousBuckConverterforApplicationsinNetworking&ComputingSystems.

文件：270.17 Kbytes Page：10 Pages

Ultra-LowGateImpedance

文件：275.78 Kbytes Page：10 Pages

Industry-standardpinoutSO-8Package

文件：261.04 Kbytes Page：10 Pages

Industry-standardpinoutSO-8Package

文件：261.04 Kbytes Page：10 Pages

HighFrequencyPoint-of-LoadSynchronousBuckConverter

文件：275.78 Kbytes Page：10 Pages

LINEARINTEGRATEDCIRCUITS3-TERMINALVOLATGEREGULATORS

[CODISemiconductor,Inc.] LINEARINTEGRATEDCIRCUITS3-TERMINALVOLATGEREGULATORS

THREETERMINALPOSITIVEVOLTAGEREGULATORS

THREETERMINALPOSITIVEVOLTAGEREGULATORS 5V,6V,7V,8V,9V,10V,12V,15V,18V,20V,24V. FEATURES •InternalThermalOverloadProtection. •InternalShortCircuitCurrentLimiting. •OutputCurrentupto1.5A. •SatisfiesIEC-65Specification.(InternationalElectronicalCommission).

THREE-TERMINALPOSITIVEVOLTAGEREGULATORIC

[CODISemiconductor,Inc.]

Outputcurrentinexcessof1A

文件：16.83 Kbytes Page：2 Pages

VoltageRegulatorinaTO-220PlasticPackage

文件：1.55972 Mbytes Page：6 Pages