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位置：首页 > IC中文资料第1460页 > IRF53

IRF53价格

参考价格：￥11.7879

型号：IRF530 品牌：Vishay 备注：这里有IRF53多少钱，2024年最近7天走势，今日出价，今日竞价，IRF53批发/采购报价，IRF53行情走势销售排行榜，IRF53报价。
型号 功能描述 生产厂家&企业 LOGO 操作
IRF530

N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR

MotorolaMotorola, Inc

摩托罗拉

Motorola
IRF530

N-CHANNEL ENHANCEMENT-MODE SILICON GATE

PowerFieldEffectTransistor N-ChannelEnhancement-ModeSiliconGate TMOSPOWERFET14AMPERES100VOLTSRDS(on)=0.140Ω

TRSYS

Transys Electronics

TRSYS
IRF530

N-CHANNEL POWER MOSFETS

SamsungSamsung Group

三星三星半导体

Samsung
IRF530

N-Channel Power MOSFETs, 20 A, 60-100 V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighpower,highspeedapplications,suchasswitchingpower,supplies,UPS,ACandDCmotorcontrol,relayandsolenoiddriversandhighenergypulsecircuits. ●LowRDS(on) ●VGSRatedat±20V ●

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
IRF530

N-Channel Power MOSFETs Avalanche Energy Rated

HARRIS

HARRIS corporation

HARRIS
IRF530

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTORS N-channelenhancementmodePOWERMOSfieldeffecttransistors.EasydriveandveryfastswitchingtimesmakethesePOWERMOStransistorsidealforhighspeedswitchingapplications.ApplicationsincludeDC/DCconverters,UPSbatterychargers,s

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
IRF530

Power MOSFET(Vdss=100V, Rds(on)=0.16ohm, Id=14A)

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF530

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipation

VishayVishay Siliconix

威世科技

Vishay
IRF530

N?묬hannel Enhancement?묺ode Silicon Gate

TMOSE−FET.™PowerFieldEffectTransistor N−ChannelEnhancement−ModeSiliconGate ThisadvancedTMOSpowerFETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thisnewenergyefficientdesignalsooffersadrain−to−sourcediodewithafastrecoverytime.Designedfo

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
IRF530

Power MOSFET

FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •175°Coperatingtemperature •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinfor

VishayVishay Siliconix

威世科技

Vishay
IRF530

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=14A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.18Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
IRF530

TO-220-3L Plastic-Encapsulate MOSFETS

FEATURES LowRDS(on) VGSRatedat ± 20V SiliconGateforFastSwitchingSpeed Rugged LowDriveRequirements DESCRITION Designedespeciallyforhighvoltage,highspeedapplications, suchasoff-lineswitchingpowersupplies,UPS,ACandDC motorcontrols,relayandsolenoiddrivers.

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ
IRF530

14A, 100V, 0.160 Ohm, N-Channel Power MOSFETs

TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
IRF530_V01

Power MOSFET

FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •175°Coperatingtemperature •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinfor

VishayVishay Siliconix

威世科技

Vishay
IRF5305

Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieve extremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,pr

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF5305

Advanced Process Technology

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provi

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI
IRF5305L

Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieve extremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedand ruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF5305L

Advanced Process Technology

Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthe highestpowercapabilityandthelowestpossibleonresistanceinanyexistingsurfacemountpackage.TheD2Pakissuitableforhighcurrentapplicationsbecauseofitslowinte

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI
IRF5305LPBF

HEXFET Power MOSFET

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF5305LPBF

Advanced Process Technology

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI
IRF5305PBF

-60V P-Channel MOSFET

Features *VDS(V)=-60V *ID=-31A(VGS=-10V) *RDS(ON)

UMWUMW

友台友台半导体

UMW
IRF5305S

Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieve extremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedand ruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF5305S

Advanced Process Technology

Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthe highestpowercapabilityandthelowestpossibleonresistanceinanyexistingsurfacemountpackage.TheD2Pakissuitableforhighcurrentapplicationsbecauseofitslowinte

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI
IRF5305SPBF

HEXFET Power MOSFET

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF5305SPBF

Advanced Process Technology

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI
IRF5305STRL

-55V P-Channel MOSFET

Features *VDS(V)=-55V *ID=-31A(VGS=-10V) *RDS(ON)

UMWUMW

友台友台半导体

UMW
IRF530A

Advanced Power MOSFET

FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■175°COperatingTemperature ■LowerLeakageCurrent:10μA(Max.)@VDS=100V ■LowerRDS(ON):0.092Ω(Typ.)

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
IRF530FI

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTORS N-channelenhancementmodePOWERMOSfieldeffecttransistors.EasydriveandveryfastswitchingtimesmakethesePOWERMOStransistorsidealforhighspeedswitchingapplications.ApplicationsincludeDC/DCconverters,UPSbatterychargers,s

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
IRF530FP

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.12Ω ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100oC ■LOWGATECHARGE ■AVALANCHERUGGEDTECHNOLOGY ■APPLICATIONORIENTEDCHARACTERIZATION ■HIGHCURRENTCAPABILITY ■175oCOPERATINGTEMPERATURE APPLICAT

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
IRF530L

HEXFET Power MOSFET

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF530N

N-channel TrenchMOS transistor

GENERALDESCRIPTION N-channelenhancementmodefield-effectpowertransistorinaplasticenvelopeusing’trench’technology.TheIRF530NissuppliedintheSOT78(TO220AB)conventionalleadedpackage. 1.’Trench’technology 2.Lowon-stateresistance 3.Fastswitching 4.

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
IRF530N

Power MOSFET(Vdss=100V, Rds(on)=90mohm, Id=17A)

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF530N

22A, 100V, 0.064 Ohm, N-Channel Power MOSFET

Features •UltraLowOn-Resistance -rDS(ON)=0.064Ω,VGS=10V •SimulationModels -TemperatureCompensatedPSPICE™andSABER©ElectricalModels -SpiceandSABER©ThermalImpedanceModels -www.intersil.com •PeakCurrentvsPulseWidthCurve •UISRatingCurve

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil
IRF530N

N-Channel MOSFET Transistor

•DESCRITION •reliabledeviceforuseinawidevarietyofapplications •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.09Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperati

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
IRF530NL

HEXFET Power MOSFET

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF530NL

Ultra Low On-Resistance

Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleon-resistanceinanyexistingsurfacemountpackage.TheD2Pakissuitableforhighcurrentapplicationsbecauseofitslowinter

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI
IRF530NL

Isc N-Channel MOSFET Transistor

•FEATURES •WithTo-262package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
IRF530NLPBF

HEXFET Power MOSFET

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF530NLPBF

Advanced Process Technology

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF530NPBF

HEXFET짰 Power MOSFET

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF530NPBF

N-Channel 100-V (D-S) MOSFET

FEATURES •TrenchFET®PowerMOSFET •175°CJunctionTemperature •LowThermalResistancePackage •100RgTested APPLICATIONS •IsolatedDC/DCConverters

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体（台湾）有限公司

VBSEMI
IRF530NS

HEXFET Power MOSFET

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF530NS

Ultra Low On-Resistance

Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleon-resistanceinanyexistingsurfacemountpackage.TheD2Pakissuitableforhighcurrentapplicationsbecauseofitslowinter

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI
IRF530NS

Advanced Process Technology

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF530NS

Isc N-Channel MOSFET Transistor

•FEATURES •WithTo-263(D2PAK)package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
IRF530NS

N-Channel 100-V (D-S) MOSFET

FEATURES •TrenchFET®PowerMOSFET •175°CJunctionTemperature •LowThermalResistancePackage •100RgTested APPLICATIONS •IsolatedDC/DCConverters

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体（台湾）有限公司

VBSEMI
IRF530NSPBF

HEXFET Power MOSFET

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF530NSTRLPBF

Advanced Process Technology

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF530NSTRRPBF

Advanced Process Technology

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF530PBF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipation

VishayVishay Siliconix

威世科技

Vishay
IRF530R

N-Channel Power MOSFETs Avalanche Energy Rated

HARRIS

HARRIS corporation

HARRIS
IRF530S

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •SurfaceMount •Availablein

VishayVishay Siliconix

威世科技

Vishay
IRF530S

Power MOSFET(Vdss=100V, Rds(on)=0.16ohm, Id=14A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provi

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF530S

Power MOSFET

FEATURES •Surface-mount •Availableintapeandreel •Dynamicdv/dtrating •Repetitiveavalancherated •175°Coperatingtemperature •Fastswitching •Easeofparalleling •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatas

VishayVishay Siliconix

威世科技

Vishay
IRF530S_V01

Power MOSFET

FEATURES •Surface-mount •Availableintapeandreel •Dynamicdv/dtrating •Repetitiveavalancherated •175°Coperatingtemperature •Fastswitching •Easeofparalleling •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatas

VishayVishay Siliconix

威世科技

Vishay
IRF530SPBF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •SurfaceMount •Availablein

VishayVishay Siliconix

威世科技

Vishay
IRF530STRLPBF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •SurfaceMount •Availablein

VishayVishay Siliconix

威世科技

Vishay
IRF530STRRPBF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •SurfaceMount •Availablein

VishayVishay Siliconix

威世科技

Vishay
IRF531

isc N-Channel Mosfet Transistor

•DESCRITION •Designedespeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. •FEATURES •LowRDS(on) •VGSRatedat±20V •SiliconGateforFastSwitchingSpeed •Rugged •LowDriveRequire

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
IRF531

N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR

MotorolaMotorola, Inc

摩托罗拉

Motorola

IRF53产品属性

  • 类型

    描述

  • 型号

    IRF53

  • 功能描述

    MOSFET N-Chan 100V 9.2 Amp

  • RoHS

    否

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS（导通）

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

IRF53供应商更多...

更新时间：2024-5-30 10:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市宝芯创电子有限公司
IRF530
IR
1516+
TO-220
30449
进口原管现货/50
询价
深圳市河锋鑫科技有限公司
IRF530STRRPBF
Vishay Siliconix
22+
TO2633 D2Pak (2 Leads + Tab) T
9000
原厂渠道,现货配单
询价
深圳市芯福林电子科技有限公司
IRF530STRRPBF
Vishay Siliconix
21+
TO2633 D2Pak (2 Leads + Tab) T
13880
公司只售原装,支持实单
询价
深圳市华来深电子有限公司
IRF530S
IR
23+
TO-263
11846
一级代理商现货批发,原装正品,假一罚十
询价
深圳市湘达电子科技有限公司
IRF530
ON/安森美
22+
TO-220
3800
只做原装,价格优惠,长期供货。
询价
易创佳业科技（深圳）有限公司
IRF530STRRPBF
Vishay Siliconix
23+
TO2633 D2Pak (2 Leads + Tab) T
9000
原装正品，支持实单
询价
深圳市云美电子科技有限公司
IRF5305PBFMOSFET或IGBT开关IC
INFINEON/英飞凌
22+
QFN24
37500
只做原装进口现货
询价
讯运(深圳/上海)电子有限公司
IRF530NPBF
IR
0829+
TO220
50000
深圳现货
询价
深圳市欧立现代科技有限公司
IRF530SPBF
ir
22+
原装
6980
原装现货,可开13%税票
询价
深圳市振鑫微电子科技有限公司
IRF530N
IR
23+
TO-220
589610
新到现货 原厂一手货源 价格秒杀代理!
询价

IRF53芯片相关品牌

  • ACT
  • AME
  • A-POWER
  • Balluff
  • CONEC
  • FESTO
  • Kingbright
  • MCNIX
  • PASTERNACK
  • RSG
  • SUNTSU
  • XPPOWER

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