IRF2807价格

参考价格:¥11.3555

型号:IRF2807HR 品牌:International Rectifier 备注:这里有IRF2807多少钱,2024年最近7天走势,今日出价,今日竞价,IRF2807批发/采购报价,IRF2807行情走势销售排行榜,IRF2807报价。
型号 功能描述 生产厂家&企业 LOGO 操作
IRF2807

PowerMOSFET(Vdss=75V,Id=82A??

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF2807

AdvancedProcessTechnology

Description TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipationlevelstoapproximately50watts.ThelowthermalresistanceandlowpackagecostoftheTO-220contributetoitswideacceptancethroughouttheindustry. ●AdvancedProcessTe

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI
IRF2807

SEMICONDUCTORS

文件:2.43533 Mbytes Page:31 Pages

etc2List of Unclassifed Manufacturers

etc2未分类制造商

etc2
IRF2807

N-ChannelMOSFETTransistor

文件:338.77 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

AdvancedProcessTechnology

Description AdvancedMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,providesthede

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

HEXFETPowerMOSFET

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

HEXFETPowerMOSFET

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

HEXFETPowerMOSFET

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

AdvancedProcessTechnologyUltraLowOn-Resistance

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

AdvancedProcessTechnology

Description AdvancedMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,providesthede

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

HEXFETPowerMOSFET

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

HEXFETPowerMOSFET

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

HEXFETPowerMOSFET

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

AdvancedProcessTechnologyUltraLowOn-Resistance

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

AdvancedProcessTechnology

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

AUTOMOTIVEMOSFETAdvancedProcessTechnology

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

AdvancedProcessTechnology

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

AUTOMOTIVEMOSFETAdvancedProcessTechnology

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

AUTOMOTIVEMOSFET(75V,94mOHM,75A)

Description ThisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescomb

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

AUTOMOTIVEMOSFET(75V,94mOHM,75A)

Description ThisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescomb

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

AdvancedProcessTechnology

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

AUTOMOTIVEMOSFETAdvancedProcessTechnology

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

AUTOMOTIVEMOSFET(75V,94mOHM,75A)

Description ThisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescomb

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

IscN-ChannelMOSFETTransistor

文件:300.39 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

AdvancedProcessTechnology

文件:133.54 Kbytes Page:11 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

AdvancedProcessTechnology

文件:3.08673 Mbytes Page:8 Pages

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

AdvancedProcessTechnology

文件:192.22 Kbytes Page:8 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

AdvancedProcessTechnology

文件:239.57 Kbytes Page:8 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

AdvancedProcessTechnology

文件:133.54 Kbytes Page:11 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

IscN-ChannelMOSFETTransistor

文件:189.1 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

AdvancedProcessTechnology

文件:278.55 Kbytes Page:11 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

AdvancedProcessTechnology

文件:133.54 Kbytes Page:11 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

AdvancedProcessTechnology

文件:279.61 Kbytes Page:13 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

N-ChannelMOSFETTransistor

文件:340.21 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

AdvancedProcessTechnology

文件:279.61 Kbytes Page:13 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

IscN-ChannelMOSFETTransistor

文件:301.04 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

AdvancedProcessTechnology

文件:405.08 Kbytes Page:12 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

AdvancedProcessTechnology

文件:405.08 Kbytes Page:12 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

AdvancedProcessTechnology

文件:405.08 Kbytes Page:12 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

AdvancedProcessTechnology

文件:405.08 Kbytes Page:12 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

AdvancedProcessTechnology

文件:279.61 Kbytes Page:13 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

IscN-ChannelMOSFETTransistor

文件:189.76 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

AdvancedProcessTechnology

文件:405.08 Kbytes Page:12 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

AdvancedProcessTechnology

文件:279.61 Kbytes Page:13 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

AdvancedProcessTechnology

文件:405.08 Kbytes Page:12 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

60MHzsurfacemountbandpassfilter

GeneralDescription KR2807isa60MHzsurfacemountbandpassfilter.Thefilterhasa3dBbandwidthof9MHz±1MHz.Othercenterfrequenciesandbandwidthsavailable.Pleaseconsultthefactory. Features •SurfaceMountPackage •SharpTransitiontoStopband •>40dBStopband •50ΩSou

KRKR Electronics, Inc.

KR Electronics, Inc.

KR

Mini-NodeCATVOpticalReceiver

Mini-NodeCATVOpticalReceiver The2807Mini-NodeCATVOpticalReceiver,workingwitheitherthe2804PDSor2805PNStransmitter,providesCATVdistributionheadendoperatorswithanextensivearrayoffeaturesthatofferalow-costsolutiontoincreasesystemperformance.Thereceiverprovide

EMCORE

Emcore Corporation

EMCORE

Mini-NodeCATVOpticalReceiver

Mini-NodeCATVOpticalReceiver The2807Mini-NodeCATVOpticalReceiver,workingwitheitherthe2804PDSor2805PNStransmitter,providesCATVdistributionheadendoperatorswithanextensivearrayoffeaturesthatofferalow-costsolutiontoincreasesystemperformance.Thereceiverprovide

EMCORE

Emcore Corporation

EMCORE

150A竊?5VN-CHANNELMOSFET

文件:378.76 Kbytes Page:7 Pages

KIAGuangdong Keyia Semiconductor Technology Co., Ltd

可易亚半导体广东可易亚半导体科技有限公司

KIA

2807Mini-NodeCATVOpticalReceiver

文件:235.05 Kbytes Page:2 Pages

EMCORE

Emcore Corporation

EMCORE

IRF2807产品属性

  • 类型

    描述

  • 型号

    IRF2807

  • 制造商

    International Rectifier

  • 功能描述

    MOSFET N TO-220AB

  • 制造商

    International Rectifier

  • 功能描述

    Single N-Channel 75 V 230 W 160 nC Hexfet Power Mosfet Flange Mount - TO-220AB

更新时间:2024-4-26 16:56:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
20+/21+
TO-263
9500
全新原装进口价格优势
IOR
21+
N/A
100000
原厂订货价格优势,可开13%的增值税票
IR
23+
TO-220
28855
保证进口原装现货假一赔十
INFINEON/英飞凌
24+
TO220
58000
全新原厂原装正品现货,可提供技术支持、样品免费!
IR
23+
TO-220AB-
7750
全新原装优势
IR
22+23+
TO-263
17819
绝对原装正品全新进口深圳现货
Infineon(英飞凌)
24+
TO-220
690000
支持实单/只做原装
IR
23+
TO-220
18000
INFINEON
2022+
TO-220
95000
100%进口原装正品现货,公司原装现货众多欢迎加微信咨
IR
1950+
TO-263
4856
只做原装正品现货!或订货假一赔十!

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