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IRF1405价格
参考价格:¥3.6681
型号:IRF1405PBF 品牌:INTERNATIONAL 备注:这里有IRF1405多少钱,2024年最近7天走势,今日出价,今日竞价,IRF1405批发/采购报价,IRF1405行情走势销售排行榜,IRF1405报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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IRF1405 | PowerMOSFET(Vdss=55V,Rds(on)=5.3mohm,Id=169A?? Description SpecificallydesignedforAutomotiveapplications,thisStripePlanardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtempe | IRFInternational Rectifier 英飞凌英飞凌科技公司 | ||
IRF1405 | ElectricPowerSteering(EPS) Description SpecificallydesignedforAutomotiveapplications,thisStripePlanardesignofHEXFET®PowerMOSFETsutilizesthelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtemp | KERSEMI Kersemi Electronic Co., Ltd. | ||
IRF1405 | N-ChannelMOSFETTransistor 文件:338.97 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ||
IRF1405 | HEXFET짰PowerMOSFET 文件:255.41 Kbytes Page:10 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | ||
AUTOMOTIVEMOSFET Description StripePlanardesignofHEXFET®PowerMOSFETsutilizesthelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveav | KERSEMI Kersemi Electronic Co., Ltd. | |||
PowerMOSFET(Vdss=55V,Rds(on)=5.3mohm,Id=131A?? Description StripePlanardesignofHEXFET®PowerMOSFETsutilizesthelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveav | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AUTOMOTIVEMOSFET(VDSS=55V,RDS(on)=5.3m廓,ID=131A) Description StripePlanardesignofHEXFET®PowerMOSFETsutilizesthelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveav | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AUTOMOTIVEMOSFET VDSS=55V RDS(on)=5.3mΩ ID=169A Description SpecificallydesignedforAutomotiveapplications,thisStripePlanardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOS | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
PowerMOSFET(Vdss=55V,Rds(on)=5.3mohm,Id=131A?? Description StripePlanardesignofHEXFET®PowerMOSFETsutilizesthelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveav | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AUTOMOTIVEMOSFET Description StripePlanardesignofHEXFET®PowerMOSFETsutilizesthelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveav | KERSEMI Kersemi Electronic Co., Ltd. | |||
AUTOMOTIVEMOSFET(VDSS=55V,RDS(on)=5.3m廓,ID=131A) Description StripePlanardesignofHEXFET®PowerMOSFETsutilizesthelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveav | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AUTOMOTIVEMOSFET VDSS=55V RDS(on)=4.9mΩ ID=75A Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemp | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AUTOMOTIVEMOSFET VDSS=55V RDS(on)=4.9mΩ ID=75A Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemp | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AUTOMOTIVEMOSFET VDSS=55V RDS(on)=4.9mΩ ID=120A Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtem | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
HEXFET짰PowerMOSFET(VDSS=55V,RDS(on)=4.9m廓,ID=120A) VDSS=55V RDS(on)=4.9mΩ ID=120A Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtem | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AUTOMOTIVEMOSFET(VDSS=55V,RDS(on)=4.9m廓,ID=75A) VDSS=55V RDS(on)=4.9mΩ ID=75A Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemp | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AUTOMOTIVEMOSFET(VDSS=55V,RDS(on)=4.9m廓,ID=75A) VDSS=55V RDS(on)=4.9mΩ ID=75A Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemp | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AUTOMOTIVEMOSFET VDSS=55V RDS(on)=4.9mΩ ID=75A Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemp | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AUTOMOTIVEMOSFET VDSS=55V RDS(on)=4.9mΩ ID=120A Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtem | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
HEXFET짰PowerMOSFET(VDSS=55V,RDS(on)=4.9m廓,ID=120A) VDSS=55V RDS(on)=4.9mΩ ID=120A Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtem | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AUTOMOTIVEMOSFET(VDSS=55V,RDS(on)=4.9m廓,ID=75A) VDSS=55V RDS(on)=4.9mΩ ID=75A Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemp | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
HEXFET짰PowerMOSFET 文件:255.41 Kbytes Page:10 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AdvancedProcessTechnology 文件:263.89 Kbytes Page:9 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AdvancedProcessTechnology 文件:263.89 Kbytes Page:9 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
iscN-ChannelMOSFETTransistor 文件:263.54 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
AdvancedProcessTechnology 文件:313.75 Kbytes Page:11 Pages | VishayVishay Siliconix 威世科技 | |||
AdvancedProcessTechnology 文件:313.75 Kbytes Page:11 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AdvancedProcessTechnology 文件:313.75 Kbytes Page:11 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
N-ChannelMOSFETTransistor 文件:338.82 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
AdvancedProcessTechnology 文件:401.85 Kbytes Page:12 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AdvancedProcessTechnology 文件:401.85 Kbytes Page:12 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
IscN-ChannelMOSFETTransistor 文件:299.72 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
ACFilmCapacitorsLighting Features ■Self-healingproperties ■Lowdissipationfactor ■Highinsulationresisitance Construction ■Dielectric:polypropylenefilm ■Aluminiumcan ■Softpolyurethanresin ■Internaldischageresistor ■Overpressuredisconnector Typicalapplications Forgeneralsinewaveapplicat | EPCOSEPCOS - TDK Electronics 爱普科斯爱普科斯与TDK元件事业部 | |||
ACTIVE(DIGITAL)DELAYLINES [RCD] Wideselectionofsizes! RCD’sdigitaldelaylineshavebeendesignedtoprovideprecisetapdelayswithallthenecessarydriveandpick-offcircuitry.Allinputsandoutputsareschottky-typeandrequirenoadditionalcomponentstoachievespecifieddelays.Encapsulated/moldedconstructi | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
AnalogMultiplexers/Demultiplexers 文件:169.98 Kbytes Page:12 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
AnalogMultiplexers/Demultiplexers 文件:169.98 Kbytes Page:12 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
ALUMINUMCHASSIS 文件:109.8 Kbytes Page:1 Pages | etc2List of Unclassifed Manufacturers etc2未分类制造商 |
IRF1405产品属性
- 类型
描述
- 型号
IRF1405
- 制造商
International Rectifier
- 功能描述
MOSFET N TO-220
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
INFINEON |
23+ |
NA |
200 |
MOSFET |
|||
INTERNATIONALRECTIFIER |
2046+ |
9852 |
只做原装正品现货!或订货假一赔十! |
||||
IR |
23+ |
TO220 |
2510 |
原厂原装正品 |
|||
IR |
22+ |
TO-263 |
88162 |
||||
IR |
1746+ |
TO263 |
8862 |
深圳公司现货!特价支持工厂客户!提供样品! |
|||
IR |
19+ |
TO-263-7 |
11200 |
||||
IR |
16+ |
原厂封装 |
2000 |
原装现货假一罚十 |
|||
IR |
2305+ |
原厂封装 |
12500 |
15年芯片行业经验/只供原装正品:0755-83267371邹小姐 |
|||
IR |
22+ |
35000 |
OEM工厂,中国区10年优质供应商! |
||||
ADI |
2022+ |
DIP8 |
6000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
IRF1405规格书下载地址
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深圳市科恒伟业电子有限公司深圳市福田区华强北振兴路101号华匀大厦2栋5楼516网站http://www.kehengweiyedz.cn网站http://www.kehengweiye.com邮箱:yulin522@126.com0755-8320005015817287769柯先生
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IRA-S210ST01,全新原装现货当天发货或门市自取0755-82732291.
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DdatasheetPDF页码索引
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