IRF1010E价格

参考价格:¥2.6922

型号:IRF1010EPBF 品牌:INTERNATIONAL 备注:这里有IRF1010E多少钱,2024年最近7天走势,今日出价,今日竞价,IRF1010E批发/采购报价,IRF1010E行情走势销售排行榜,IRF1010E报价。
型号 功能描述 生产厂家&企业 LOGO 操作
IRF1010E

PowerMOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A?

•AdvancedProcessTechnology •UltraLowOn-Resistance •Dynamicdv/dtRating •175°COperatingTemperature •FastSwitching •FullyAvalancheRated Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveex

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF1010E

UltraLowOn-Resistance

文件:786.41 Kbytes Page:8 Pages

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI
IRF1010E

N-ChannelMOSFETTransistor

文件:338.48 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

PowerMOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A??

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

HEXFETPowerMOSFET

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

HEXFET짰PowerMOSFET

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

PowerMOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A??

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

HEXFETPowerMOSFET

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

AUTOMOTIVEMOSFET

Description ThisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

AUTOMOTIVEMOSFET

Description ThisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

AUTOMOTIVEMOSFET

Description ThisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

AdvancedProcessTechnology

Description ThisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

AUTOMOTIVEMOSFET

Description ThisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

AdvancedProcessTechnology

Description ThisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

AUTOMOTIVEMOSFET

Description ThisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8.5mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

AdvancedProcessTechnology

Description ThisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

AUTOMOTIVEMOSFET

Description ThisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

AdvancedProcessTechnology

Description ThisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

AdvancedProcessTechnology

文件:227.87 Kbytes Page:11 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

AdvancedProcessTechnologyUltraLowOn-Resistance

文件:3.12153 Mbytes Page:8 Pages

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

iscN-ChannelMOSFETTransistor

文件:263.33 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

AdvancedProcessTechnology

文件:227.87 Kbytes Page:11 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

AdvancedProcessTechnology

文件:227.87 Kbytes Page:11 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

N-ChannelMOSFETTransistor

文件:338.8 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

AdvancedProcessTechnology

文件:413.46 Kbytes Page:12 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

AdvancedProcessTechnology

文件:413.46 Kbytes Page:12 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

IscN-ChannelMOSFETTransistor

文件:299.58 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

DeadBlowNylonHammers

Die-castonepieceheadandhandleofaluminiumalloy.Fittedwithshockabsorbentrubbergrip.Screw-infacesofspecialnylon.Thehollowheadispartiallyfilledwithshotwhichaddstotheweightandpreventsre-bound.Allowingheavyandeffectiveblowswithmaximumimpactcontrol.

THORTHOR communications

THOR communications

THOR

Voltageratingupto3800V

文件:1.35889 Mbytes Page:5 Pages

NELLSEMINell Semiconductor Co., Ltd

尼爾半導體尼爾半導體股份有限公司

NELLSEMI

PhaseControlThyristors

文件:1.3645 Mbytes Page:5 Pages

NELLSEMINell Semiconductor Co., Ltd

尼爾半導體尼爾半導體股份有限公司

NELLSEMI

HighFrequency,HighCurrentPowerInductors

文件:327.3 Kbytes Page:3 Pages

COILCRAFTCoilcraft

线艺

COILCRAFT

HighlyPredictablePerformancewith100AutomaticPlacementandRouting

文件:2.00904 Mbytes Page:98 Pages

ActelActel Corporation

Actel 公司

Actel

IRF1010E产品属性

  • 类型

    描述

  • 型号

    IRF1010E

  • 制造商

    International Rectifier

  • 功能描述

    MOSFET N TO-220AB

更新时间:2024-5-11 20:29:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INFINEON
23+
SMD
918000
明嘉莱只做原装正品现货
INFINEON/IR
1907+
NA
2800
20年老字号,原装优势长期供货
Infineon Technologies
23+
TO-220AB
30000
晶体管-分立半导体产品-原装正品
INFINEON/英飞凌
23+
TO-220
76000
IR英飞凌VISHAY专做 全新原装进口正品假一赔百,可开13
IR
22+
TO220
3000
十七年VIP会员,诚信经营,一手货源,原装正品可零售!
INFINEON/英飞凌
21+
TO-220
15972
全新、原装
Infineon(英飞凌)
23+
NA
7000
原装正品!假一罚十!
INFINEON/IR
23+
TO-220-3
3000
原装现货支持送检
IR
23+
TO-220
20540
保证进口原装现货假一赔十
IR
2020+
TO-220
9600
百分百原装正品 真实公司现货库存 本公司只做原装 可

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