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IRF1010E价格
参考价格:¥2.6922
型号:IRF1010EPBF 品牌:INTERNATIONAL 备注:这里有IRF1010E多少钱,2024年最近7天走势,今日出价,今日竞价,IRF1010E批发/采购报价,IRF1010E行情走势销售排行榜,IRF1010E报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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IRF1010E | PowerMOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A? •AdvancedProcessTechnology •UltraLowOn-Resistance •Dynamicdv/dtRating •175°COperatingTemperature •FastSwitching •FullyAvalancheRated Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveex | IRFInternational Rectifier 英飞凌英飞凌科技公司 | ||
IRF1010E | UltraLowOn-Resistance 文件:786.41 Kbytes Page:8 Pages | KERSEMI Kersemi Electronic Co., Ltd. | ||
IRF1010E | N-ChannelMOSFETTransistor 文件:338.48 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ||
PowerMOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A?? Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
HEXFETPowerMOSFET Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
HEXFET짰PowerMOSFET Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor, | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
PowerMOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A?? Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
HEXFETPowerMOSFET Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AUTOMOTIVEMOSFET Description ThisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AUTOMOTIVEMOSFET Description ThisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AUTOMOTIVEMOSFET Description ThisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AdvancedProcessTechnology Description ThisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AUTOMOTIVEMOSFET Description ThisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AdvancedProcessTechnology Description ThisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AUTOMOTIVEMOSFET Description ThisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8.5mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
AdvancedProcessTechnology Description ThisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AUTOMOTIVEMOSFET Description ThisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AdvancedProcessTechnology Description ThisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AdvancedProcessTechnology 文件:227.87 Kbytes Page:11 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AdvancedProcessTechnologyUltraLowOn-Resistance 文件:3.12153 Mbytes Page:8 Pages | KERSEMI Kersemi Electronic Co., Ltd. | |||
iscN-ChannelMOSFETTransistor 文件:263.33 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
AdvancedProcessTechnology 文件:227.87 Kbytes Page:11 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AdvancedProcessTechnology 文件:227.87 Kbytes Page:11 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
N-ChannelMOSFETTransistor 文件:338.8 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
AdvancedProcessTechnology 文件:413.46 Kbytes Page:12 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AdvancedProcessTechnology 文件:413.46 Kbytes Page:12 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
IscN-ChannelMOSFETTransistor 文件:299.58 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
DeadBlowNylonHammers Die-castonepieceheadandhandleofaluminiumalloy.Fittedwithshockabsorbentrubbergrip.Screw-infacesofspecialnylon.Thehollowheadispartiallyfilledwithshotwhichaddstotheweightandpreventsre-bound.Allowingheavyandeffectiveblowswithmaximumimpactcontrol. | THORTHOR communications THOR communications | |||
Voltageratingupto3800V 文件:1.35889 Mbytes Page:5 Pages | NELLSEMINell Semiconductor Co., Ltd 尼爾半導體尼爾半導體股份有限公司 | |||
PhaseControlThyristors 文件:1.3645 Mbytes Page:5 Pages | NELLSEMINell Semiconductor Co., Ltd 尼爾半導體尼爾半導體股份有限公司 | |||
HighFrequency,HighCurrentPowerInductors 文件:327.3 Kbytes Page:3 Pages | COILCRAFTCoilcraft 线艺 | |||
HighlyPredictablePerformancewith100AutomaticPlacementandRouting 文件:2.00904 Mbytes Page:98 Pages | ActelActel Corporation Actel 公司 |
IRF1010E产品属性
- 类型
描述
- 型号
IRF1010E
- 制造商
International Rectifier
- 功能描述
MOSFET N TO-220AB
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
INFINEON |
23+ |
SMD |
918000 |
明嘉莱只做原装正品现货 |
|||
INFINEON/IR |
1907+ |
NA |
2800 |
20年老字号,原装优势长期供货 |
|||
Infineon Technologies |
23+ |
TO-220AB |
30000 |
晶体管-分立半导体产品-原装正品 |
|||
INFINEON/英飞凌 |
23+ |
TO-220 |
76000 |
IR英飞凌VISHAY专做 全新原装进口正品假一赔百,可开13 |
|||
IR |
22+ |
TO220 |
3000 |
十七年VIP会员,诚信经营,一手货源,原装正品可零售! |
|||
INFINEON/英飞凌 |
21+ |
TO-220 |
15972 |
全新、原装 |
|||
Infineon(英飞凌) |
23+ |
NA |
7000 |
原装正品!假一罚十! |
|||
INFINEON/IR |
23+ |
TO-220-3 |
3000 |
原装现货支持送检 |
|||
IR |
23+ |
TO-220 |
20540 |
保证进口原装现货假一赔十 |
|||
IR |
2020+ |
TO-220 |
9600 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
IRF1010E规格书下载地址
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2013-2-8
DdatasheetPDF页码索引
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