位置:首页 > IC中文资料第322页 > IRF1010EZ
IRF1010EZ价格
参考价格:¥5.3421
型号:IRF1010EZLPBF 品牌:International 备注:这里有IRF1010EZ多少钱,2024年最近7天走势,今日出价,今日竞价,IRF1010EZ批发/采购报价,IRF1010EZ行情走势销售排行榜,IRF1010EZ报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
IRF1010EZ | AUTOMOTIVEMOSFET Description ThisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi | IRFInternational Rectifier 英飞凌英飞凌科技公司 | ||
IRF1010EZ | N-ChannelMOSFETTransistor 文件:338.8 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ||
AUTOMOTIVEMOSFET Description ThisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AUTOMOTIVEMOSFET Description ThisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AdvancedProcessTechnology Description ThisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AUTOMOTIVEMOSFET Description ThisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AdvancedProcessTechnology Description ThisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AUTOMOTIVEMOSFET Description ThisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AUTOMOTIVEMOSFET Description ThisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AdvancedProcessTechnology Description ThisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AdvancedProcessTechnology Description ThisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AdvancedProcessTechnology 文件:413.46 Kbytes Page:12 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AdvancedProcessTechnology 文件:413.46 Kbytes Page:12 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
IscN-ChannelMOSFETTransistor 文件:299.58 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
DeadBlowNylonHammers Die-castonepieceheadandhandleofaluminiumalloy.Fittedwithshockabsorbentrubbergrip.Screw-infacesofspecialnylon.Thehollowheadispartiallyfilledwithshotwhichaddstotheweightandpreventsre-bound.Allowingheavyandeffectiveblowswithmaximumimpactcontrol. | THORTHOR communications THOR communications | |||
Voltageratingupto3800V 文件:1.35889 Mbytes Page:5 Pages | NELLSEMINell Semiconductor Co., Ltd 尼爾半導體尼爾半導體股份有限公司 | |||
PhaseControlThyristors 文件:1.3645 Mbytes Page:5 Pages | NELLSEMINell Semiconductor Co., Ltd 尼爾半導體尼爾半導體股份有限公司 | |||
HighFrequency,HighCurrentPowerInductors 文件:327.3 Kbytes Page:3 Pages | COILCRAFTCoilcraft 线艺 | |||
HighlyPredictablePerformancewith100AutomaticPlacementandRouting 文件:2.00904 Mbytes Page:98 Pages | ActelActel Corporation Actel 公司 |
IRF1010EZ产品属性
- 类型
描述
- 型号
IRF1010EZ
- 功能描述
MOSFET N-CH 60V 75A TO-220AB
- RoHS
否
- 类别
分离式半导体产品 >> FET - 单
- 系列
HEXFET®
- 标准包装
1,000
- 系列
MESH OVERLAY™ FET
- 型
MOSFET N 通道,金属氧化物 FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
- C
18A 开态Rds(最大)@ Id, Vgs @ 25°
- C
180 毫欧 @ 9A,10V Id 时的
- Vgs(th)(最大)
4V @ 250µA 闸电荷(Qg) @
- Vgs
72nC @ 10V 输入电容(Ciss) @
- Vds
1560pF @ 25V 功率 -
- 最大
40W
- 安装类型
通孔
- 封装/外壳
TO-220-3 整包
- 供应商设备封装
TO-220FP
- 包装
管件
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
2020+ |
TO-220AB |
16800 |
绝对原装进口现货,假一赔十,价格优势!? |
|||
IR |
2020+ |
TO-263 |
8000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
Infineon Technologies |
23+ |
TO-220AB |
30000 |
晶体管-分立半导体产品-原装正品 |
|||
Infineon(英飞凌) |
23+ |
NA |
7000 |
原装正品!假一罚十! |
|||
IOR |
22+ |
TO-220 |
32350 |
原装正品 假一罚十 公司现货 |
|||
IR |
2016+ |
TO-220 |
6528 |
房间原装进口现货假一赔十 |
|||
IR |
23+ |
TO-220AB |
8600 |
全新原装现货 |
|||
IR |
2022 |
TO-220 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
|||
IR |
TO-262 |
12500 |
只做原装支持实单需要联系Q:235 |
||||
IR |
17+ |
TO-220AB |
31518 |
原装正品 可含税交易 |
IRF1010EZ规格书下载地址
IRF1010EZ参数引脚图相关
- kt250
- kse13005
- ks20
- km710
- ka5q1265rf
- k9f1208
- k310
- k2698
- k233
- k2055
- k2010
- jumper
- jtag接口
- jk触发器
- j111
- j108
- isd1420
- irf630
- irf540n
- irf540
- IRF150
- IRF143
- IRF142
- IRF141
- IRF1407
- IRF1405
- IRF1404
- IRF140
- IRF133
- IRF1324
- IRF132
- IRF1312
- IRF1310NPBF
- IRF131
- IRF1302
- IRF130
- IRF123
- IRF122
- IRF121
- IRF120
- IRF1104PBF
- IRF1104
- IRF1018ESTRLPBF-CUTTAPE
- IRF1018ESTRLPBF
- IRF1018ESPBF
- IRF1018ESLPBF
- IRF1018EPBF
- IRF1010ZSTRLPBF
- IRF1010ZSPBF
- IRF1010ZPBF
- IRF1010ZLPBF
- IRF1010NSTRLPBF
- IRF1010NSPBF
- IRF1010NPBF
- IRF1010EZSTRLP
- IRF1010EZSPBF
- IRF1010EZPBF
- IRF1010EZLPBF
- IRF1010ESTRLPBF
- IRF1010ESPBF
- IRF1010EPBF
- IRF1010
- IRF101
- IRF100B202
- IRF100
- IRF-1
- IRF054
- IRF044
- IRF03ER101K
- IRF03EB101K
- IRF03BH821K
- IRF03BH5R6K
- IRF03BH470K
- IRF03BH3R3K
- IRF03BH390K
- IRF03BH330K
- IRF03BH2R2K
- IRF03BH221K
- IRF03BH220K
- IRF03BH1R0K
- IRF03BH101K
- IRF034
- IRF01ER4R7K
- IRF01BH470K
- IRDM983
- IRDM982
- IRD3913
- IRD3912
- IRD3911
- IRD3910
- IRD3909
- IRD3903
- IRD3902
- IRD3901
- IRD3900
- IRD3899
- IRCZ44
IRF1010EZ数据表相关新闻
IRF1407PBF
IRF1407PBF
2022-7-22IR3899MTRPBF 原装正品.仓库现货
华富芯深圳智能科技有限公司
2022-2-7IRF1404ZPBF
深圳市科恒伟业电子有限公司深圳市福田区华强北振兴路101号华匀大厦2栋5楼516网站http://www.kehengweiyedz.cn网站http://www.kehengweiye.com邮箱:yulin522@126.com0755-8320005015817287769柯先生
2020-4-18IRA-S210ST01
IRA-S210ST01,全新原装现货当天发货或门市自取0755-82732291.
2020-2-17IRF130CHP1100,IRF1310N,IRF1310NL,IRF1310NS,IRF1404PBF
IRF130CHP1100,IRF1310N,IRF1310NL,IRF1310NS,IRF1404PBF
2020-1-12IR51H224-自激式半桥
特点·输出功率MOSFET在半桥配置·高侧栅极驱动器引导操作设计·自举二极管集成包(HD型)·精确的定时控制两个功率MOSFET匹配延迟获得50%的占空比匹配死区的1.2us·内部振荡器具有可编程的频率·15.6V齐纳钳位VCC的离线运行的半桥式输出是用RT淘汰·微功率启动说明该IR51H(四)XXX是完整的高电压,高转速,selfoscillating半桥电路.专有的HVIC和闩锁免疫CMOS技术,随着的HEXFET®功率MOSFET技术,使
2013-2-8
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80