位置：首页 > IC中文资料第10586页 > IPI90R340C3
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IPI90R340C3 | CoolMOS??PowerTransistor Features •Lowestfigure-of-meritRONxQg •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •WorldwidebestRDS,oninTO262(I2Pak) •Ultralowgatecharge CoolMOS™900Visdesignedfor: | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |  |   |
IPI90R340C3 | CoolMOS??PowerTransistor 文件：347.28 Kbytes Page：10 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | |
CoolMOS??PowerTransistor 文件：347.28 Kbytes Page：10 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
N-ChannelMOSFETTransistor •DESCRIPTION •Highpeakcurrentcapability •Ultralowgatecharge •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.34Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
N-ChannelMOSFETTransistor •DESCRITION •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤340mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
IscN-ChannelMOSFETTransistor •FEATURES •WithTO-220FPackage •DrainSourceVoltage- :VDSS=900V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.34Ω(Max) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplicati | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
CoolMOSPowerTransistor Features •Lowestfigure-of-meritRONxQg •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •WorldwidebestRDS,oninTO220Fullpak •Ultralowgatecharge CoolMOS™900Visdesignedfor: | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
CoolMOS??PowerTransistor Features •Lowestfigure-of-meritRONxQg •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedaccordingtoJEDEC1)forindustrialapplications •Pb-freeleadplating;RoHScompliant •Ultralowgatecharge | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | |
IPI90R340C3产品属性
- 类型
描述
- 型号
IPI90R340C3
- 功能描述
MOSFET N-CH 900V 15A TO-262
- RoHS
是
- 类别
分离式半导体产品 >> FET - 单
- 系列
CoolMOS™
- 标准包装
1,000
- 系列
MESH OVERLAY™ FET
- 型
MOSFET N 通道，金属氧化物 FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
- C
18A 开态Rds（最大）@ Id, Vgs @ 25°
- C
180 毫欧 @ 9A，10V Id 时的
- Vgs(th)（最大）
4V @ 250µA 闸电荷(Qg) @
- Vgs
72nC @ 10V 输入电容(Ciss) @
- Vds
1560pF @ 25V 功率 -
- 最大
40W
- 安装类型
通孔
- 封装/外壳
TO-220-3 整包
- 供应商设备封装
TO-220FP
- 包装
管件
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon/英飞凌 |
21+ |
PG-TO262-3 |
8800 |
公司只作原装正品 |
|||
Infineon Technologies |
24+ |
PG-TO262-3-1 |
30000 |
晶体管-分立半导体产品-原装正品 |
|||
INFINEON/英飞凌 |
24+ |
TO262 |
58000 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
Infineon/英飞凌 |
2023+ |
PG-TO262-3 |
6000 |
全新原装深圳仓库现货有单必成 |
|||
Infineon/英飞凌 |
23+ |
PG-TO262-3 |
25630 |
原装正品 |
|||
Infineon |
23+ |
PG-TO262-3 |
15500 |
英飞凌优势渠道全系列在售 |
|||
Infineon/英飞凌 |
2023+ |
PG-TO262-3 |
6000 |
原装正品现货、支持第三方检验、终端BOM表可配单提供 |
|||
Infineon/英飞凌 |
21+ |
PG-TO262-3 |
6000 |
原装现货正品 |
|||
Infineon/英飞凌 |
23+ |
PG-TO262-3 |
25000 |
原装正品,假一赔十! |
|||
Infineon/英飞凌 |
23+ |
PG-TO262-3 |
12700 |
买原装认准中赛美 |
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IPI90R340C3规格书下载地址
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瀚佳科技(深圳）有限公司： 专业销售集成电路IC.单片机.内存闪存.二三级管模块等电子元器件。
2018-12-30
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