型号 功能描述 生产厂家&企业 LOGO 操作

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect

文件:986.08 Kbytes Page:23 Pages

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect

文件:986.08 Kbytes Page:23 Pages

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte writeenable(BWE),andbytewrites(BWx) ◆L

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte writeenable(BWE),andbytewrites(BWx) ◆L

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte writeenable(BWE),andbytewrites(BWx) ◆L

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte writeenable(BWE),andbytewrites(BWx) ◆L

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte writeenable(BWE),andbytewrites(BWx) ◆L

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

IDT71V67603S150BG产品属性

  • 类型

    描述

  • 型号

    IDT71V67603S150BG

  • 功能描述

    IC SRAM 9MBIT 150MHZ 119BGA

  • RoHS

  • 类别

    集成电路(IC) >> 存储器

  • 系列

    -

  • 标准包装

    72

  • 系列

    - 格式 -

  • 存储器

    RAM

  • 存储器类型

    SRAM - 同步

  • 存储容量

    9M(256K x 36)

  • 速度

    75ns

  • 接口

    并联

  • 电源电压

    3.135 V ~ 3.465 V

  • 工作温度

    -40°C ~ 85°C

  • 封装/外壳

    100-LQFP

  • 供应商设备封装

    100-TQFP(14x14)

  • 包装

    托盘

  • 其它名称

    71V67703S75PFGI

更新时间:2024-4-29 18:02:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IDT
1525+
BGA
30000
绝对原装进口环保现货可开17%增值税发票
IDT
22+
BGA
5000
全新原装现货!自家库存!
IDT
23+
119-PBGA(14x22)
39257
专业分销产品!原装正品!价格优势!
IDT
23+
BGA
8230
全新原装真实库存含13点增值税票!
IDT
23+
119PBGA (14x22)
9000
原装正品,支持实单
IDT
23+
119-BGA
7576
原装现货
IDT
22+
119PBGA (14x22)
9000
原厂渠道,现货配单
IDT
1923+
BGAQFP
1680
只做进口原装!假一罚十!绝对有货!
IDT
21+
119PBGA (14x22)
13880
公司只售原装,支持实单
IDT
BGA
269
100%原装正品!现货热价热卖!可开17%增值税票!

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