位置：首页 > IC中文资料第6662页 > IDT71V67603S150BGGI
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IDT71V67603S150BGGI | 256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect 文件：986.08 Kbytes Page：23 Pages | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 |  |   |
256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte writeenable(BWE),andbytewrites(BWx) ◆L | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 |  | | |
256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte writeenable(BWE),andbytewrites(BWx) ◆L | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte writeenable(BWE),andbytewrites(BWx) ◆L | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte writeenable(BWE),andbytewrites(BWx) ◆L | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte writeenable(BWE),andbytewrites(BWx) ◆L | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | |
IDT71V67603S150BGGI产品属性
- 类型
描述
- 型号
IDT71V67603S150BGGI
- 功能描述
IC SRAM 9MBIT 150MHZ 119BGA
- RoHS
是
- 类别
集成电路(IC) >> 存储器
- 系列
-
- 标准包装
45
- 系列
- 格式 -
- 存储器
RAM
- 存储器类型
SRAM - 双端口，异步
- 存储容量
128K（8K x 16）
- 速度
15ns
- 接口
并联
- 电源电压
3 V ~ 3.6 V
- 工作温度
0°C ~ 70°C
- 封装/外壳
100-LQFP
- 供应商设备封装
100-TQFP（14x14）
- 包装
托盘
- 其它名称
70V25S15PF
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IDT |
1525+ |
BGA |
30000 |
绝对原装进口环保现货可开17%增值税发票 |
|||
IDT |
22+ |
BGA |
5000 |
全新原装现货!自家库存! |
|||
IDT |
23+ |
119-PBGA(14x22) |
71890 |
专业分销产品!原装正品!价格优势! |
|||
IDT |
23+ |
BGA-165D |
50000 |
全新原装正品现货,支持订货 |
|||
IDT |
21+ |
BGA |
6880 |
只做原装 |
|||
IDT |
23+ |
BGA |
98900 |
原厂原装正品现货!! |
|||
IDT |
23+ |
BGA |
8230 |
全新原装真实库存含13点增值税票! |
|||
IDT |
23+ |
119PBGA (14x22) |
9000 |
原装正品，支持实单 |
|||
IDT |
23+ |
119-BGA |
5319 |
原装现货 |
|||
IDT |
22+ |
BGA-165D |
3000 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
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DdatasheetPDF页码索引
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