位置：首页 > IC中文资料第4863页 > IDT71V424S10YG
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IDT71V424S10YG | 3.3VCMOSSTATICRAM4MEG(512Kx8-BIT) DESCRIPTION: TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-he-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 |  |   |
3.3VCMOSSTATICRAM4MEG(512Kx8-BIT) DESCRIPTION: TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-he-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | | | |
3.3VCMOSStaticRAM Description TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | | | |
3.3VCMOSStaticRAM4Meg(512Kx8-Bit) Features ◆512Kx8advancedhigh-speedCMOSStaticRAM ◆JEDECCenterPower/GNDpinoutforreducednoise ◆Equalaccessandcycletimes —CommercialandIndustrial:10/12/15ns ◆Single3.3Vpowersupply ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputs | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 |  | | |
3.3VCMOSStaticRAM4Meg(512Kx8-Bit) Features ◆512Kx8advancedhigh-speedCMOSStaticRAM ◆JEDECCenterPower/GNDpinoutforreducednoise ◆Equalaccessandcycletimes —CommercialandIndustrial:10/12/15ns ◆Single3.3Vpowersupply ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputs | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
3.3VCMOSStaticRAM Description TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | | | |
3.3VCMOSStaticRAM Description TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | | |
IDT71V424S10YG产品属性
- 类型
描述
- 型号
IDT71V424S10YG
- 功能描述
IC SRAM 4MBIT 10NS 36SOJ
- RoHS
是
- 类别
集成电路(IC) >> 存储器
- 系列
-
- 标准包装
3,000
- 系列
- 格式 -
- 存储器
EEPROMs - 串行
- 存储器类型
EEPROM
- 存储容量
32K(4K x 8)
- 速度
100kHz，400kHz
- 接口
I²C，2 线串口
- 电源电压
2.5 V ~ 5.5 V
- 工作温度
-40°C ~ 125°C
- 封装/外壳
8-SOIC（0.154，3.90mm 宽）
- 供应商设备封装
8-SOIC
- 包装
带卷(TR)
- 其它名称
CAV24C32WE-GT3OSTR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IDT |
2021+ |
36-BSOJ |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
IDT |
23+ |
36-SOJ |
7750 |
全新原装优势 |
|||
IDT |
22+23+ |
New |
37150 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
IDT |
21+ROHS |
SOJ |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
IDT |
21+ |
SOJ |
6688 |
十年老店,原装正品 |
|||
IDT Integrated Device Technol |
2023+ |
36-SOJ |
244 |
安罗世纪电子只做原装正品货 |
|||
IDT |
23+ |
NA/ |
3314 |
原装现货,当天可交货,原型号开票 |
|||
IDT |
2022 |
SOJ |
80000 |
原装现货,OEM渠道,欢迎咨询 |
|||
IDT |
22+ |
36SOJ |
9000 |
原厂渠道,现货配单 |
|||
IDT |
23+ |
NA |
3230 |
航宇科工半导体-中国航天科工集团战略合作伙伴! |
IDT71V424S10YG芯片相关品牌
IDT71V424S10YG规格书下载地址
IDT71V424S10YG参数引脚图相关
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DdatasheetPDF页码索引
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