型号 功能描述 生产厂家&企业 LOGO 操作
IDT71V424S10YGI

3.3VCMOSSTATICRAM4MEG(512Kx8-BIT)

DESCRIPTION: TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-he-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT

3.3VCMOSStaticRAM

Description TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT

3.3VCMOSStaticRAM4Meg(512Kx8-Bit)

Features ◆512Kx8advancedhigh-speedCMOSStaticRAM ◆JEDECCenterPower/GNDpinoutforreducednoise ◆Equalaccessandcycletimes —CommercialandIndustrial:10/12/15ns ◆Single3.3Vpowersupply ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputs

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

3.3VCMOSStaticRAM4Meg(512Kx8-Bit)

Features ◆512Kx8advancedhigh-speedCMOSStaticRAM ◆JEDECCenterPower/GNDpinoutforreducednoise ◆Equalaccessandcycletimes —CommercialandIndustrial:10/12/15ns ◆Single3.3Vpowersupply ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputs

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

3.3VCMOSStaticRAM

Description TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT

3.3VCMOSStaticRAM

Description TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT

IDT71V424S10YGI产品属性

  • 类型

    描述

  • 型号

    IDT71V424S10YGI

  • 功能描述

    IC SRAM 4MBIT 10NS 36SOJ

  • RoHS

  • 类别

    集成电路(IC) >> 存储器

  • 系列

    -

  • 标准包装

    2,000

  • 系列

    MoBL® 格式 -

  • 存储器

    RAM

  • 存储器类型

    SRAM - 异步

  • 存储容量

    16M(2M x 8,1M x 16)

  • 速度

    45ns

  • 接口

    并联

  • 电源电压

    2.2 V ~ 3.6 V

  • 工作温度

    -40°C ~ 85°C

  • 封装/外壳

    48-VFBGA

  • 供应商设备封装

    48-VFBGA(6x8)

  • 包装

    带卷(TR)

更新时间:2024-5-14 17:46:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IDT
23+
NA
3230
航宇科工半导体-中国航天科工集团战略合作伙伴!
IDT
2021+
SOJ
7106
原装正品假一罚十
IDT
21+
SOJ
6688
十年老店,原装正品
IDT/Integrated Device Technolo
21+
SOJ
50
优势代理渠道,原装正品,可全系列订货开增值税票
IDT
21+
36SOJ
13880
公司只售原装,支持实单
IDT
22+
SOJ-36
4650
IDT
20733+
9750
进品原装正品 现货库存带17%增值发票
IDT
20+/21+
PGA
5600
全新原装进口价格优惠
IDT
23+
36-SOJ
71890
专业分销产品!原装正品!价格优势!
IDT
23+
36SOJ
9000
原装正品,支持实单

IDT71V424S10YGI芯片相关品牌

  • BANNER
  • CHEMI-CON
  • CTMICRO
  • JUXING
  • LINER
  • MCC
  • Microchip
  • MINMAX
  • NEL
  • ROHM
  • SANYO
  • SEOUL

IDT71V424S10YGI数据表相关新闻