位置：首页 > IC中文资料第3549页 > HGTP12N60A4D
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
HGTP12N60A4D | 600V,SMPSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG12N60A4D,HGTP12N60A4Dand HGT1S12N60A4DSareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-st | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  |   |
HGTP12N60A4D | 600V,SMPSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG12N60A4D,HGTP12N60A4Dand HGT1S12N60A4DSareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-st | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 |  | |
HGTP12N60A4D | 封装/外壳：TO-220-3 包装：管件 描述：IGBT 600V 54A TO220-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  | |
600V,SMPSSeriesN-ChannelIGBTs TheHGTP12N60A4,HGTG12N60A4andHGT1S12N60A4S9AareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-stat | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
600V,SMPSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG12N60A4D,HGTP12N60A4Dand HGT1S12N60A4DSareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-st | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
600V,SMPSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG12N60A4D,HGTP12N60A4Dand HGT1S12N60A4DSareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-st | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
600V,SMPSSeriesN-ChannelIGBT TheHGTP12N60A4,HGTG12N60A4andHGT1S12N60A4SareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-state | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
600V,SMPSSeriesN-ChannelIGBTs TheHGTP12N60A4,HGTG12N60A4andHGT1S12N60A4S9AareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-stat | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | |
HGTP12N60A4D产品属性
- 类型
描述
- 型号
HGTP12N60A4D
- 功能描述
IGBT 晶体管 600V N-Channel IGBT SMPS Series
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FSC |
2016+ |
TO220 |
3000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
FAI |
22+ |
TO-220 |
9150 |
绝对原装现货,价格低,欢迎询购! |
|||
FAIRCHIL |
23+ |
TO-220 |
9960 |
价格优势/原装现货/客户至上/欢迎广大客户来电查询 |
|||
FAI |
2018+ |
26976 |
代理原装现货/特价热卖! |
||||
FAIRCHILD/仙童 |
2048+ |
TO-220 |
9851 |
只做原装正品现货!或订货假一赔十! |
|||
FCS |
22+ |
TO-220 |
30000 |
十七年VIP会员,诚信经营，一手货源，原装正品可零售！ |
|||
FAIRCHILD |
06+ |
原厂原装 |
4416 |
只做全新原装真实现货供应 |
|||
FAIRCHILD |
23+ |
TO-220 |
30000 |
代理全新原装现货,价格优势 |
|||
onsemi(安森美) |
23+ |
TO-220 |
1471 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
FAIRCHILD |
23+ |
TO-220 |
9526 |
HGTP12N60A4D芯片相关品牌
HGTP12N60A4D规格书下载地址
HGTP12N60A4D参数引脚图相关
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HGTP12N60A4D数据表相关新闻
HGTG11N120CND绝对全新原装正品特价销售
HGTG11N120CND绝对全新原装正品特价销售
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2022-6-6HGTG11N120CND保证原装假一赔十
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2020-11-25HHM1517 深圳市得捷芯城电子科技 AVX KEMET 尼康 三洋 钽电容代理商
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2019-8-21
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