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HGTG30N60A4D价格
参考价格：￥21.1335
型号：HGTG30N60A4D 品牌：FAIRCHILD 备注：这里有HGTG30N60A4D多少钱，2024年最近7天走势，今日出价，今日竞价，HGTG30N60A4D批发/采购报价，HGTG30N60A4D行情走势销售排行榜，HGTG30N60A4D报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
HGTG30N60A4D | 600V,SMPSSeriesN-ChannelIGBTwith TheHGTG30N60A4DisaMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderat | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  |   |
HGTG30N60A4D | 600V,SMPSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode 600V,SMPSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG30N60A4DisaMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolar | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 |  | |
HGTG30N60A4D | N-ChannelIGBT DESCRIPTION ·LowSaturationVoltage:VCE(sat)=2.6V@IC=30A ·HighCurrentCapability ·HighInputImpedance ·LowConductionLoss APPLICATIONS ·SynchronousRectificationinSMPS ·MotorDrives ·UPS,PFC ·Generalpurposeinverter | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
HGTG30N60A4D | 封装/外壳：TO-247-3 包装：管件 描述：IGBT 600V 75A 463W TO247 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  | |
600V,SMPSSeriesN-ChannelIGBT TheHGTG30N60A4combinesthebestfeaturesofhighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.ThisIGBTisidealformanyhighvoltageswitchingapplicationsoperatingathighfrequencieswherelowconductionlossesareessential.Thisdevicehasbeen | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
600V,SMPSSeriesN-ChannelIGBT TheHGTG30N60A4isaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
600V,SMPSSeriesN-ChannelIGBT TheHGTG30N60A4isaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
600V,SMPSSeriesN-ChannelIGBT TheHGTG30N60A4combinesthebestfeaturesofhighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.ThisIGBTisidealformanyhighvoltageswitchingapplicationsoperatingathighfrequencieswherelowconductionlossesareessential.Thisdevicehasbeen | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
600V,SMPSSeriesN-ChannelIGBTwith TheHGTG30N60A4DisaMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderat | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | |
HGTG30N60A4D产品属性
- 类型
描述
- 型号
HGTG30N60A4D
- 功能描述
IGBT 晶体管 600V N-Channel IGBT SMPS Series
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
21+ |
TO-247-3 |
8800 |
公司只做原装正品 |
|||
TI |
23+ |
NA |
6500 |
全新原装假一赔十 |
|||
ON |
2020+ |
TO247 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
三年内 |
1983 |
纳立只做原装正品13590203865 |
|||||
onsemi(安森美) |
23+ |
TO-247 |
928 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
FAIRCHILD/仙童 |
20+ |
TO-247 |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
ON/安森美 |
23+ |
NA/ |
7249 |
原装现货,当天可交货,原型号开票 |
|||
ON |
1816 |
TO-247 |
164 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
onsemi(安森美) |
23+ |
TO247AC3 |
6000 |
||||
FAIRCHILD/仙童 |
24+ |
TO247 |
58000 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
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HGTG30N60A4D规格书下载地址
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