位置：首页 > IC中文资料第542页 > HGT1S7N60
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
600V,SMPSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG7N60A4D,HGTP7N60A4DandHGT1S7N60A4DSareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-state | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  |   | |
600V,SMPSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG7N60A4D,HGTP7N60A4DandHGT1S7N60A4DSareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-state | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 |  | | |
600V,SMPSSeriesN-ChannelIGBT TheHGTD7N60A4S,HGT1S7N60A4S,HGTG7N60A4andHGTP7N60A4areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchlower | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
600V,SMPSSeriesN-ChannelIGBT TheHGT1S7N60A4S9A,HGTG7N60A4andHGTP7N60A4areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statev | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
14A,600V,UFSSeriesN-ChannelIGBTswithAnti-ParallelHyperfastDiode TheHGTP7N60B3DandHGT1S7N60B3DSareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedrop | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
14A,600V,UFSSeriesN-ChannelIGBTswithAnti-ParallelHyperfastDiode TheHGTP7N60B3DandHGT1S7N60B3DSareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedrop | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
14A,600V,UFSSeriesN-ChannelIGBTs TheHGTD7N60B3S,HGT1S7N60B3SandHGTP7N60B3areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevo | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
14A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiodes GeneralDescription TheHGTP7N60C3D,HGT1S7N60C3DSandHGT1S7N60C3DareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
14A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiodes GeneralDescription TheHGTP7N60C3D,HGT1S7N60C3DSandHGT1S7N60C3DareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
14A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiodes GeneralDescription TheHGTP7N60C3D,HGT1S7N60C3DSandHGT1S7N60C3DareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
14A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiodes GeneralDescription TheHGTP7N60C3D,HGT1S7N60C3DSandHGT1S7N60C3DareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
14A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiodes TheHGTP7N60C3DandHGT1S7N60C3DSareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedrop | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
14A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiodes GeneralDescription TheHGTP7N60C3D,HGT1S7N60C3DSandHGT1S7N60C3DareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
600V,SMPSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode 文件：189.45 Kbytes Page：9 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
600V,SMPSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode 文件：189.45 Kbytes Page：9 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
600V,SMPSSeriesN-ChannelIGBT 文件：191.58 Kbytes Page：8 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
600V,SMPSSeriesN-ChannelIGBT 文件：191.58 Kbytes Page：8 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
14A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiodes 文件：547.54 Kbytes Page：9 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
14A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiodes 文件：547.54 Kbytes Page：9 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：管件 描述：IGBT 600V 14A 60W TO263AB 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  | | |
封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：管件 描述：IGBT 600V 14A 60W TO263AB 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | |
HGT1S7N60产品属性
- 类型
描述
- 型号
HGT1S7N60
- 功能描述
IGBT 晶体管 600V N-Ch IGBT SMPS Series HF
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INTERSIL |
23+ |
NA/ |
510 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
FAIRCHILD |
21+ |
35200 |
一级代理/放心采购 |
||||
INTERSIL |
23+ |
TO-263 |
90000 |
只做原厂渠道价格优势可提供技术支持 |
|||
INTERSIL |
TO-263 |
68900 |
原包原标签100%进口原装常备现货! |
||||
Intersil |
08+(pbfree) |
TO-263 |
8866 |
||||
INTERSIL |
23+ |
TO-263 |
12300 |
全新原装真实库存含13点增值税票! |
|||
HARRIS |
24+25+/26+27+ |
车规-晶体管 |
9328 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
FAIRCHILD/仙童 |
23+ |
TO-263 |
8400 |
专注配单,只做原装进口现货 |
|||
INTERSIL |
23+ |
TO-263 |
10000 |
公司只做原装正品 |
|||
INTERSIL |
22+ |
TO-263 |
6000 |
十年配单,只做原装 |
HGT1S7N60芯片相关品牌
HGT1S7N60规格书下载地址
HGT1S7N60参数引脚图相关
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- HGV95
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- HGV195
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- HGV155
- HGV135
- HGV115
- HGT4E30N60C3S
- HGT4E30N60B3S
- HGT4E30N60B3DS
- HGT4E20N60A4DS
- HGT1Y40N60C3D
- HGT1Y40N60B3D
- HGT1S7N60C3DS9A
- HGT1S7N60C3DS
- HGT1S7N60C3D
- HGT1S7N60B3S9A
- HGT1S7N60B3S
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- HGT1S7N60B3D
- HGT1S7N60B3
- HGT1S7N60A4S9A_04
- HGT1S7N60A4S9A
- HGT1S7N60A4S
- HGT1S7N60A4DS9A
- HGT1S7N60A4DS
- HGT1S5N120CNS9A
- HGT1S5N120CNS
- HGT1S5N120CNDS9A
- HGT1S5N120CNDS
- HGT1S5N120BNS9A
- HGT1S5N120BNS
- HGT1S3N60C3DS
- HGT1S3N60C3D
- HGT1S3N60B3S
- HGT1S3N60B3DS
- HGT1S3N60A4S9A
- HGT1S3N60A4S
- HGT1S3N60A4DS9A
- HGT1S3N60A4DS
- HGT1S2N120CNS9A
- HGT1S2N120CNS
- HGT1S2N120CNDS9A
- HGT1S2N120CNDS
- HGT1S2N120CN
- HGT1S2N120BNS9A
- HGQFN28
- HGPJP
- HGPJD
- HGN-375
- HGN-369
- HGN-368
- HGN-365
- HGN-341
- HGN-339
- HGN-337
- HGN-336
- HGL34M
- HGL34K
- HGL34J
- HGL34G
- HGL34D
- HGL34B
- HGL34A
- HGL341M
- HGL341K
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