位置：首页 > IC中文资料第3081页 > HGT1S20N60C3S9A
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
HGT1S20N60C3S9A | 45A,600V,UFSSeriesN-ChannelIGBT ThisfamilyofMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonly moderately | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  |   |
HGT1S20N60C3S9A产品属性
- 类型
描述
- 型号
HGT1S20N60C3S9A
- 功能描述
IGBT 晶体管 45a 600V N-Ch IGBT UFS Series
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
更新时间：2024-5-16 13:20:00
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
20+ |
SMD |
800 |
原装现货 |
|||
FAIRCHILD |
21+ |
SOT-263 |
50000 |
全新原装正品现货,支持订货 |
|||
INTERSIL |
23+ |
TO-263 |
6000 |
原装正品，支持实单 |
|||
FAIRCHILD |
928 |
199 |
公司优势库存 热卖中! |
||||
onsemi/安森美 |
新批次 |
TO-263AB |
4500 |
||||
23+ |
N/A |
49000 |
正品授权货源可靠 |
||||
FS |
22+ |
NA |
30000 |
原装现货假一罚十 |
|||
onsemi(安森美) |
23+ |
TO-263AB |
1471 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
ONSEMI |
23/22+ |
NA |
9000 |
代理渠道.实单必成 |
|||
FAIRCHILD |
18+;13+ |
SOT-263 |
388 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
HGT1S20N60C3S9A芯片相关品牌
HGT1S20N60C3S9A规格书下载地址
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DdatasheetPDF页码索引
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