HIGH-SPEEDSWITCHINGUSE

HIGH-SPEEDSWITCHINGUSE ●VDSS................................................................................300V ●rDS(ON)(MAX)..............................................................0.41Ω ●ID.......................................................................................

NchPOWERMOSFETHIGH-SPEEDSWITCHINGUSE

HIGH-SPEEDSWITCHINGUSE ●VDSS................................................................................300V ●rDS(ON)(MAX)..............................................................0.41Ω ●ID.......................................................................................

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=16A@TC=25℃ ·DrainSourceVoltage- :VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.41Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

NchPOWERMOSFETHIGH-SPEEDSWITCHINGUSE

HIGH-SPEEDSWITCHINGUSE ●10VDRIVE ●VDSS...............................................................................300V ●rDS(ON)(MAX)..............................................................0.35Ω ●ID......................................................................

MITSUBISHINchPOWERMOSFETHIGH-SPEEDSWITCHINGUSE

HIGH-SPEEDSWITCHINGUSE ●10VDRIVE ●VDSS...............................................................................300V ●rDS(ON)(MAX)..............................................................0.35Ω ●ID......................................................................