HIGH-SPEEDSWITCHINGUSE

HIGH-SPEEDSWITCHINGUSE ●VDSS................................................................................500V ●rDS(ON)(MAX)..............................................................0.80Ω ●ID.......................................................................................

HIGH-SPEEDSWITCHINGUSE

HIGH-SPEEDSWITCHINGUSE ●VDSS................................................................................500V ●rDS(ON)(MAX)..............................................................0.80Ω ●ID.......................................................................................

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=14A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.8Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv

MITSUBISHINchPOWERMOSFET

HIGH-SPEEDSWITCHINGUSE ●VDSS................................................................................500V ●rDS(ON)(MAX)..............................................................0.64Ω ●ID......................................................................................

NchPOWERMOSFETHIGH-SPEEDSWITCHINGUSE

HIGH-SPEEDSWITCHINGUSE ●VDSS................................................................................500V ●rDS(ON)(MAX)..............................................................0.64Ω ●ID......................................................................................