型号 功能描述 生产厂家&企业 LOGO 操作
FGP30N6S2

600V,SMPSIISeriesN-ChannelIGBT

GeneralDescription TheFGH30N6S2,FGP30N6S2,andFGB30N6S2areLowGateCharge,LowPlateauVoltageSMPSIIIGBTscombiningthefastswitchingspeedoftheSMPSIGBTsalongwithlowergatechargeandplateauvoltageandavalanchecapability(UIS).TheseLGCdevicesshortendelaytimes,andreduc

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
FGP30N6S2

600V,SMPSIISeriesN-ChannelIGBT

GeneralDescription TheFGH30N6S2,FGP30N6S2,andFGB30N6S2areLowGateCharge,LowPlateauVoltageSMPSIIIGBTscombiningthefastswitchingspeedoftheSMPSIGBTsalongwithlowergatechargeandplateauvoltageandavalanchecapability(UIS).TheseLGCdevicesshortendelaytimes,andreduc

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
FGP30N6S2

600V,SMPSIISeriesN-ChannelIGBT

文件:259.31 Kbytes Page:11 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
FGP30N6S2

封装/外壳:TO-220-3 包装:管件 描述:IGBT 600V 45A 167W TO220AB 分立半导体产品 晶体管 - UGBT、MOSFET - 单

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

600V,SMPSIISeriesN-ChannelIGBTwithAnti-ParallelStealthTMDiode

GeneralDescription TheFGH30N6S2D,FGP30N6S2D,andFGB30N6S2DareLowGateCharge,LowPlateauVoltageSMPSIIIGBTscombiningthefastswitchingspeedoftheSMPSIGBTsalongwithlowergatechargeandplateauvoltageandavalanchecapability(UIS).TheseLGCdevicesshortendelaytimes,andre

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

600V,SMPSIISeriesN-ChannelIGBTwithAnti-ParallelStealthTMDiode

GeneralDescription TheFGH30N6S2D,FGP30N6S2D,andFGB30N6S2DareLowGateCharge,LowPlateauVoltageSMPSIIIGBTscombiningthefastswitchingspeedoftheSMPSIGBTsalongwithlowergatechargeandplateauvoltageandavalanchecapability(UIS).TheseLGCdevicesshortendelaytimes,andre

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

封装/外壳:TO-220-3 包装:管件 描述:IGBT 600V 45A 167W TO220AB 分立半导体产品 晶体管 - UGBT、MOSFET - 单

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

600V,SMPSIISeriesN-ChannelIGBT

GeneralDescription TheFGH30N6S2,FGP30N6S2,andFGB30N6S2areLowGateCharge,LowPlateauVoltageSMPSIIIGBTscombiningthefastswitchingspeedoftheSMPSIGBTsalongwithlowergatechargeandplateauvoltageandavalanchecapability(UIS).TheseLGCdevicesshortendelaytimes,andreduc

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

600V,SMPSIISeriesN-ChannelIGBT

GeneralDescription TheFGH30N6S2,FGP30N6S2,andFGB30N6S2areLowGateCharge,LowPlateauVoltageSMPSIIIGBTscombiningthefastswitchingspeedoftheSMPSIGBTsalongwithlowergatechargeandplateauvoltageandavalanchecapability(UIS).TheseLGCdevicesshortendelaytimes,andreduc

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

600V,SMPSIISeriesN-ChannelIGBTwithAnti-ParallelStealthTMDiode

GeneralDescription TheFGH30N6S2D,FGP30N6S2D,andFGB30N6S2DareLowGateCharge,LowPlateauVoltageSMPSIIIGBTscombiningthefastswitchingspeedoftheSMPSIGBTsalongwithlowergatechargeandplateauvoltageandavalanchecapability(UIS).TheseLGCdevicesshortendelaytimes,andre

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

600V,SMPSIISeriesN-ChannelIGBT

文件:259.31 Kbytes Page:11 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

600V,SMPSIISeriesN-ChannelIGBT

文件:259.31 Kbytes Page:11 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

FGP30N6S2产品属性

  • 类型

    描述

  • 型号

    FGP30N6S2

  • 功能描述

    IGBT 晶体管 Sgl 600V N-Ch

  • RoHS

  • 制造商

    Fairchild Semiconductor

  • 配置

    集电极—发射极最大电压

  • VCEO

    650 V

  • 集电极—射极饱和电压

    2.3 V

  • 栅极/发射极最大电压

    20 V 在25

  • C的连续集电极电流

    150 A

  • 栅极—射极漏泄电流

    400 nA

  • 功率耗散

    187 W

  • 封装/箱体

    TO-247

  • 封装

    Tube

更新时间:2024-5-15 20:19:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON / FAIRCHILD
1932+
TO-220
290
一级代理,专注军工、汽车、医疗、工业、新能源、电力
FSC
22+
NA
27003
全新原装正品现货
Fairchild/ON
21+
TO220AB
13880
公司只售原装,支持实单
FAIRCHILD
2023+
TO-220
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
FAIRCHILD
05+
原厂原装
5629
只做全新原装真实现货供应
ON/安森美
22+
TO-220
87841
FAIRCHILD/仙童
22+
TO-220
25000
只做原装进口现货,专注配单
FAIRCHILD
22+
35000
OEM工厂,中国区10年优质供应商!
FAIRCHILD/仙童
2310+
TO220
3689
优势代理渠道,原装现货,可全系列订货
FAIRCHILD/仙童
23+
NA/
3500
原装现货,当天可交货,原型号开票

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