型号 功能描述 生产厂家&企业 LOGO 操作
FGB30N6S2D

600V,SMPSIISeriesN-ChannelIGBTwithAnti-ParallelStealthTMDiode

GeneralDescription TheFGH30N6S2D,FGP30N6S2D,andFGB30N6S2DareLowGateCharge,LowPlateauVoltageSMPSIIIGBTscombiningthefastswitchingspeedoftheSMPSIGBTsalongwithlowergatechargeandplateauvoltageandavalanchecapability(UIS).TheseLGCdevicesshortendelaytimes,andre

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
FGB30N6S2D

600V,SMPSIISeriesN-ChannelIGBTwithAnti-ParallelStealthTMDiode

GeneralDescription TheFGH30N6S2D,FGP30N6S2D,andFGB30N6S2DareLowGateCharge,LowPlateauVoltageSMPSIIIGBTscombiningthefastswitchingspeedoftheSMPSIGBTsalongwithlowergatechargeandplateauvoltageandavalanchecapability(UIS).TheseLGCdevicesshortendelaytimes,andre

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

600V,SMPSIISeriesN-ChannelIGBT

GeneralDescription TheFGH30N6S2,FGP30N6S2,andFGB30N6S2areLowGateCharge,LowPlateauVoltageSMPSIIIGBTscombiningthefastswitchingspeedoftheSMPSIGBTsalongwithlowergatechargeandplateauvoltageandavalanchecapability(UIS).TheseLGCdevicesshortendelaytimes,andreduc

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

600V,SMPSIISeriesN-ChannelIGBT

GeneralDescription TheFGH30N6S2,FGP30N6S2,andFGB30N6S2areLowGateCharge,LowPlateauVoltageSMPSIIIGBTscombiningthefastswitchingspeedoftheSMPSIGBTsalongwithlowergatechargeandplateauvoltageandavalanchecapability(UIS).TheseLGCdevicesshortendelaytimes,andreduc

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

600V,SMPSIISeriesN-ChannelIGBT

文件:259.31 Kbytes Page:11 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

600V,SMPSIISeriesN-ChannelIGBTwithAnti-ParallelStealthTMDiode

GeneralDescription TheFGH30N6S2D,FGP30N6S2D,andFGB30N6S2DareLowGateCharge,LowPlateauVoltageSMPSIIIGBTscombiningthefastswitchingspeedoftheSMPSIGBTsalongwithlowergatechargeandplateauvoltageandavalanchecapability(UIS).TheseLGCdevicesshortendelaytimes,andre

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

600V,SMPSIISeriesN-ChannelIGBT

文件:259.31 Kbytes Page:11 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

FGB30N6S2D产品属性

  • 类型

    描述

  • 型号

    FGB30N6S2D

  • 功能描述

    IGBT 晶体管 Dl 600V Size 3 N-Ch

  • RoHS

  • 制造商

    Fairchild Semiconductor

  • 配置

    集电极—发射极最大电压

  • VCEO

    650 V

  • 集电极—射极饱和电压

    2.3 V

  • 栅极/发射极最大电压

    20 V 在25

  • C的连续集电极电流

    150 A

  • 栅极—射极漏泄电流

    400 nA

  • 功率耗散

    187 W

  • 封装/箱体

    TO-247

  • 封装

    Tube

更新时间:2024-5-11 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
FAIRCHILD/仙童
22+
SOT-263
100000
代理渠道/只做原装/可含税
FAIRCHILD
03+
S0T-263
134
一级代理,专注军工、汽车、医疗、工业、新能源、电力
FAIRCHILD
21+
35200
一级代理/放心采购
FAIRCHILD/仙童
24+
TO263
58000
全新原厂原装正品现货,可提供技术支持、样品免费!
FAIRC
23+
原厂原装
25000
专业优势供应
Fairchild仙童
22+
TO263AB
25000
只做原装进口现货,专注配单
Fairchild/ON
21+
TO263AB
13880
公司只售原装,支持实单
FAIRCHILD/仙童
2022
SOT-263
80000
原装现货,OEM渠道,欢迎咨询
FAIRCHILD
22+23+
TO263
24055
绝对原装正品现货,全新深圳原装进口现货
FAIRCHILD/仙童
S0T-263
265209
假一罚十原包原标签常备现货!

FGB30N6S2D芯片相关品牌

  • Allegro
  • ETC1
  • HP
  • IVO
  • LEM
  • MILL-MAX
  • Samsung
  • SII
  • SynQor
  • TOSHIBA
  • Vectron
  • Winchester

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