DESIGN/PROCESSCHANGENOTIFICATION

Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti

N-ChannelUniFETIIMOSFET?

Description UniFET™IIMOSFETisFairchildSemiconductor®’shighvoltageMOSFETfamilybasedonadvancedplanarstripeandDMOStechnology.ThisadvancedMOSFETfamilyhasthesmalleston-stateresistanceamongtheplanarMOSFET,andalsoprovidessuperiorswitchingperformanceandhigheravalanc

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=11.5A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.52Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

12Amps,500VoltsN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC12N50isanN-channelmodepowerMOSFETusingUTC’sadvancedtechnologytoprovidecustomerswithplanarstripeandDMOStechnology.Thistechnologyallowsaminimumon-stateresistanceandsuperiorswitchingperformance.Italsocanwithstandhighenergypulseintheavalanch

FastSwitching

•FEATURES •DrainCurrentID=12A@TC=25℃ •DrainSourceVoltage- :VDSS=500V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.5Ω(Max) •FastSwitching •APPLICATIONS •Switchmodepowersupply.

PowerMOSFETs

FEATURES •LowFigure-of-MeritRonxQg •100AvalancheTested •GateChargeImproved •Trr/QrrImproved •ComplianttoRoHSDirective2002/95/EC

12A,500VN-CHANNELPOWERMOSFET

文件：167.59 Kbytes Page：6 Pages

N-Channel650V(D-S)MOSFET

文件：1.039369 Mbytes Page：8 Pages