FDG晶体管资料

  • FDG002别名:FDG002三极管、FDG002晶体管、FDG002晶体三极管

  • FDG002生产厂家:中国大陆半导体企业

  • FDG002制作材料

  • FDG002性质:微波 (MW)_静噪放大 (LN)_宽频带放大 (A)

  • FDG002封装形式:直插封装

  • FDG002极限工作电压:30V

  • FDG002最大电流允许值:0.7A

  • FDG002最大工作频率:<1MHZ或未知

  • FDG002引脚数:4

  • FDG002最大耗散功率:0.7W

  • FDG002放大倍数

  • FDG002图片代号:D-51

  • FDG002vtest:30

  • FDG002htest:999900

  • FDG002atest:.7

  • FDG002wtest:.7

  • FDG002代换 FDG002用什么型号代替

FDG价格

参考价格:¥1.1130

型号:FDG1024NZ 品牌:FAIRCHILD 备注:这里有FDG多少钱,2024年最近7天走势,今日出价,今日竞价,FDG批发/采购报价,FDG行情走势销售排行榜,FDG报价。
型号 功能描述 生产厂家&企业 LOGO 操作
FDG

Axial Vitreous Leaded Wirewound Resistors with CECC Approval

文件:134.6 Kbytes Page:7 Pages

VishayVishay Siliconix

威世科技

Vishay

N-Channel 2.5V Specified PowerTrench MOSFET

GeneralDescription ThisN-ChannelMOSFETisproducedusingFairchildSemiconductorsadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizetheon-stateresistanceandyetmaintainlowgatechargeforsuperiorswitchingperformance.Thesedevicesarewellsuitedforportablee

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

P-Channel 2.5V Specified PowerTrench??MOSFET

GeneralDescription ThisP-ChannelMOSFETisproducedusingFairchildSemiconductorsadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizetheon-stateresistanceandyetmaintainlowgatechargeforsuperiorswitchingperformance.Thesedevicesarewellsuitedforportablee

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

Digital FET, N-Channel

GeneralDescription ThisN-ChannelenhancementmodefieldeffecttransistorisproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance.Thisdevicehasbeendesignedespeciallyforlowvoltage

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

Digital FET, P-Channel

GeneralDescription ThisP-ChannelenhancementmodefieldeffecttransistorisproducedusingFairchildSemiconductor’sproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessistailoredtominimizeonstateresistanceatlowgatedriveconditions.Thisdeviceisdesigned

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

P-Channel Logic Level PowerTrench MOSFET

GeneralDescription ThisP-ChannelLogicLevelMOSFETisproducedusingFairchildSemiconductorsadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizeon-stateresistanceandyetmaintainsuperiorswitchingperformance. Thesedevicesarewellsuitedforlowvoltageandbatte

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

P-Channel 1.8V Specified PowerTrench MOSFET

GeneralDescription ThisP-Channel1.8VspecifiedMOSFETusesFairchild’sadvancedlowvoltagePowerTrenchprocess.Ithasbeenoptimizedforbatterypowermanagementapplications. Features •–1.5A,–20V.RDS(ON)=140mΩ@VGS=–4.5V RDS(ON)=180mΩ@VGS=

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

P-Channel 1.8V Specified PowerTrench MOSFET

GeneralDescription ThisP-Channel1.8VspecifiedMOSFETusesFairchild’sadvancedlowvoltagePowerTrenchprocess.Ithasbeenoptimizedforbatterypowermanagementapplications. Features •–1.5A,–20V.RDS(ON)=140mΩ@VGS=–4.5V RDS(ON)=180mΩ@VGS=

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

20V N-Channel PowerTrench MOSFET

GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers.Ithasbeenoptimizeduseinsmallswitchingregulators,providinganextremelylowRDS(ON)andgatec

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

20V N-Channel PowerTrench MOSFET

GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers.Ithasbeenoptimizeduseinsmallswitchingregulators,providinganextremelylowRDS(ON)andgatec

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

P-Channel 2.5V Specified PowerTrench MOSFET

Description ThisP-Channel2.5VspecifiedMOSFETisproducedinaruggedgateversionofFairchildSemiconductor’sadvancedPowerTrenchprocess.Ithasbeenoptimized forpowermanagementapplicationsforawiderangeofgatedrivevoltages(2.5V–12V). Features •–1.5A,–20V.Rds(on)=0.1

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

20V N-Channel PowerTrench MOSFET

GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers.Ithasbeenoptimizeduseinsmallswitchingregulators,providinganextremelylowRDS(ON)andgatec

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

P-Channel 1.8V Specified PowerTrench MOSFET

GeneralDescription ThisP-Channel1.8VspecifiedMOSFETusesFairchild’sadvancedlowvoltagePowerTrenchprocess.Ithasbeenoptimizedforbatterypowermanagementapplications. Features •–2A,–12V.RDS(ON)=110mΩ@VGS=–4.5VRDS(ON)=150mΩ@VGS=–2.5VRDS(ON)=215mΩ@VGS=–

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

Dual N-Channel, Digital FET

GeneralDescription ThesedualN-ChannellogiclevelenhancementmodefieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance.Thisdevicehasbeendesignedespeci

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

Dual N-Channel MOSFET

■Features ●VDS(V)=25V ●ID=220mA(VGS=4.5V) ●RDS(ON)6kVHumanBodyModel).

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

Dual N-Channel, Digital FET

GeneralDescription ThesedualN-ChannellogiclevelenhancementmodefieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance.Thisdevicehasbeendesignedespeci

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

Dual N-Channel, Digital FET

Features •25V,0.22AContinuous,0.65APeak •RDS(ON)=4Ω@VGS=4.5V, •RDS(ON)=5Ω@VGS=2.7V. •VeryLowLevelGateDriveRequirementsallowingDirectop− Erationin3VCircuits(VGS(th)6kVHumanBodyModel) •CompactIndu

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

Dual P-Channel, Digital FET

GeneralDescription ThesedualP-ChannellogiclevelenhancementmodefieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance.Thisdevicehasbeendesignedespeci

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

Dual P-Channel, Digital FET

GeneralDescription ThesedualP-ChannellogiclevelenhancementmodefieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance.Thisdevicehasbeendesignedespeci

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

Dual N-Channel, Digital FET

GeneralDescription ThesedualN-ChannellogiclevelenhancementmodefieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance.Thisdevicehasbeendesignedespeci

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

Dual N-Channel, Digital FET

GeneralDescription ThesedualN-ChannellogiclevelenhancementmodefieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance.Thisdevicehasbeendesignedespeci

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

Dual P-Channel, Digital FET

GeneralDescription ThesedualP-ChannellogiclevelenhancementmodefieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance.Thisdevicehasbeendesignedespeci

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

Dual P-Channel, Digital FET

GeneralDescription ThesedualP-ChannellogiclevelenhancementmodefieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance.Thisdevicehasbeendesignedespeci

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

P-Channel 2.5V Specified PowerTrench MOSFET

GeneralDescription ThisP-Channel2.5VspecifiedMOSFETusesaruggedgateversionofFairchild’sadvancedPowerTrenchprocess.Ithasbeenoptimizedforpowermanagement applicationswithawiderangeofgatedrivevoltage(2.5V–12V). Features –0.6A,–20V.Rds(on)=420mΩ@VGS=–4.5V

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

P-Channel 1.8V Specified PowerTrench MOSFET

GeneralDescription ThisP-Channel1.8VspecifiedMOSFETusesFairchild’sadvancedlowvoltagePowerTrenchprocess.Ithasbeenoptimizedforbatterypowermanagementapplications. Features •–0.6A,–20V.RDS(ON)=0.40Ω@VGS=–4.5V RDS(ON)=0.55Ω@VGS=–2.5

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

P-Channel 1.8V Specified PowerTrench MOSFET

GeneralDescription ThisP-Channel1.8VspecifiedMOSFETusesFairchild’sadvancedlowvoltagePowerTrenchprocess.Ithasbeenoptimizedforbatterypowermanagementapplications. Features •–0.6A,–20V.RDS(ON)=0.40Ω@VGS=–4.5V RDS(ON)=0.55Ω@VGS=–2.5

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

P-Channel 1.8V Specified PowerTrench MOSFET

GeneralDescription ThisP-Channel1.8VspecifiedMOSFETusesFairchild’sadvancedlowvoltagePowerTrenchprocess.Ithasbeenoptimizedforbatterypowermanagementapplications. Features •–0.7A,–12V.RDS(ON)=270mΩ@VGS=–4.5VRDS(ON)=360mΩ@VGS=–2.5VRDS(ON)=650mΩ@VGS=

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

P-Channel 1.8V Specified PowerTrench MOSFET

GeneralDescription ThisP-Channel1.8VspecifiedMOSFETusesFairchild’sadvancedlowvoltagePowerTrenchprocess.Ithasbeenoptimizedforbatterypowermanagementapplications. Features •–0.7A,–12V.RDS(ON)=270mΩ@VGS=–4.5VRDS(ON)=360mΩ@VGS=–2.5VRDS(ON)=650mΩ@VGS=

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

Dual 20v N-Channel PowerTrench MOSFET

GeneralDescription ThisdualN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers.Ithasbeenoptimizeduseinsmallswitchingregulators,providinganextremelylowRDS(ON)andg

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

Dual P-Channel, Digital FET

GeneralDescription ThesedualP-ChannellogiclevelenhancementmodeMOSFETareproducedusingFairchildSemiconductor’sadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizeon-stateresistance.Thisdevicehasbeendesignedespeciallyforlowvoltageapplicationsasarepl

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

Dual N & P Channel Digital FET

GeneralDescription ThesedualN&P-ChannellogiclevelenhancementmodefieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance.Thisdevicehasbeendesigne

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

Dual N & P Channel Digital FET

GeneralDescription ThesedualN&P-ChannellogiclevelenhancementmodefieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance.Thisdevicehasbeendesigne

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

Dual N & P Channel Digital FET

GeneralDescription ThesedualN&P-ChannellogiclevelenhancementmodefieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance.Thisdevicehasbeendesigne

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

Dual N & P Channel Digital FET

GeneralDescription ThesedualN&P-ChannellogiclevelenhancementmodefieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance.Thisdevicehasbeendesigne

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

Integrated Load Switch

GeneralDescription Thisdeviceisparticularlysuitedforcompactpowermanagementinportableelectronicequipmentwhere2.5Vto8Vinputand0.6Aoutputcurrentcapabilityareneeded.ThisloadswitchintegratesasmallN-ChannelpowerMOSFET(Q1)whichdrivesalargeP-ChannelpowerMOSFET(Q

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

Integrated Load Switch

GeneralDescription Thisdeviceisparticularlysuitedforcompactpowermanagementinportableelectronicequipmentwhere2.5Vto8Vinputand0.6Aoutputcurrentcapabilityareneeded.ThisloadswitchintegratesasmallN-ChannelpowerMOSFET(Q1)whichdrivesalargeP-ChannelpowerMOSFET(Q

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

Integrated Load Switch

GeneralDescription Thisdeviceisintendedtobeconfiguredasaloadswitchandisparticularlysuitedforcompactcomputerperipheralswitchingapplicationswhere3Vto20Vinputand0.6Aoutputcurrentcapabilityareneeded.ThisdevicefeaturesasmallN-ChannelMOSFET(Q1)togetherwithal

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

Integrated Load Switch

GeneralDescription Thisdeviceisparticularlysuitedforcompactpowermanagementinportableelectronicequipmentwhere2.5Vto8Vinputand0.8Aoutputcurrentcapabilityareneeded.ThisloadswitchintegratesasmallN-ChannelpowerMOSFET(Q1)thatdrivesalargeP-ChannelpowerMOSFET(Q2

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

20V N & P-Channel PowerTrench MOSFETs

GeneralDescription TheN&P-ChannelMOSFETsareproducedusingFairchildSemiconductor’sadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizeon-stateresistanceandyetmaintainsuperiorswitchingperformance. Thesedeviceshavebeendesignedtoofferexceptionalpow

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

20V N & P-Channel PowerTrench짰MOSFETs

GeneralDescription TheN&P-ChannelMOSFETsareproducedusingFairchildSemiconductor’sadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizeon-stateresistanceandyetmaintainsuperiorswitchingperformance. Thesedeviceshavebeendesignedtoofferexceptionalpow

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

20V N & P-Channel PowerTrench MOSFETs

GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers.Ithasbeenoptimizeduseinsmallswitchingregulators,providinganextremelylowRDS(ON)andgatec

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

包装:袋 描述:MIDPIECE PAIR FOR FDG.1B. 连接器,互连器件 圆形连接器配件

LEMOLEMO

雷莫

LEMO

包装:散装 描述:CONN PLUG MALE 4P GOLD SLDR CUP 连接器,互连器件 圆形连接器组件

LEMOLEMO

雷莫

LEMO

Dual N-Channel PowerTrench짰 MOSFET 20 V, 1.2 A, 175 m廓

文件:298.71 Kbytes Page:7 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

Dual N-Channel 20 V (D-S) MOSFET

文件:932.61 Kbytes Page:7 Pages

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

N-Channel Logic Level PowerTrench MOSFET

文件:81.09 Kbytes Page:5 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

N-Channel Logic Level PowerTrench MOSFET

文件:81.09 Kbytes Page:5 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

Triple-Supply Power Management IC for Powering FPGAs and DSPs

文件:1.31298 Mbytes Page:29 Pages

TITexas Instruments

德州仪器美国德州仪器公司

TI

20V N-Channel PowerTrenchO MOSFET

文件:497.41 Kbytes Page:5 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

20V N-Channel PowerTrenchO MOSFET

文件:497.41 Kbytes Page:5 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

P-Channel PowerTrench짰 MOSFET -20V, -2.6A, 97m廓

文件:458.81 Kbytes Page:6 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

N-Channel 100V Specified PowerTrenchMOSFET

文件:80.82 Kbytes Page:5 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

Single N-Channel PowerTrench짰 MOSFET 20 V, 2.2 A, 70 m廓

文件:289.67 Kbytes Page:7 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

FREQUENCY DOUBLER

文件:135.62 Kbytes Page:1 Pages

MERRIMAC

Merrimac Industries

MERRIMAC

Dual N-Channel, Digital FET

文件:351.8 Kbytes Page:5 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

Dual N-Channel, Digital FET

文件:351.8 Kbytes Page:5 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

Dual N-Channel, Digital FET

文件:413.86 Kbytes Page:5 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

Dual N-Channel 20 V (D-S) MOSFET

文件:931.51 Kbytes Page:7 Pages

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

Dual N-Channel, Digital FET

文件:413.86 Kbytes Page:5 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

Dual N-Channel, Digital FET

文件:58.96 Kbytes Page:5 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

FDG产品属性

  • 类型

    描述

  • 型号

    FDG

  • 功能描述

    环形推拉式连接器 STRAIGHT PLUG LONG VERSION

  • RoHS

  • 制造商

    Hirose Connector

  • 产品类型

    Connectors

  • 系列

    HR10

  • 触点类型

    Socket(Female)

  • 外壳类型

    Receptacle

  • 触点数量

    4

  • 外壳大小

    7

  • 安装风格

    Panel

  • 端接类型

    Solder

  • 电流额定值

    2 A

更新时间:2024-5-15 22:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON
2020+
SC70-6
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
FAIRCHILD/仙童
24+
SOT-363
154682
明嘉莱只做原装正品现货
FAIRCHILD
21+
SOT-363
3731
十年信誉,只做原装,有挂就有现货!
ON/安森美
21+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
FAIRCHILD/仙童
21+
SOT363
20000
全新原装 公司现货 价优
ON
21+
SOT23-6
205101
原装现货假一赔十
FAIRCHILD
21+
SMD
3780
只做原装正品假一赔十!正规渠道订货!
ON/安森美
21+
SC70-6
9080
只做原装,质量保证
FAIRCHILD/仙童
2024+原装现货
SOT363
8950
BOM配单专家,发货快,价格低
ON(安森美)
23+
标准封装
7468
全新原装正品/价格优惠/质量保障

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  • AVAGO
  • DAESAN
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  • LITEON
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  • MMD
  • NJSEMI
  • ROSENBERGER
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