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FDG晶体管资料
FDG002别名:FDG002三极管、FDG002晶体管、FDG002晶体三极管
FDG002生产厂家:中国大陆半导体企业
FDG002制作材料:
FDG002性质:微波 (MW)_静噪放大 (LN)_宽频带放大 (A)
FDG002封装形式:直插封装
FDG002极限工作电压:30V
FDG002最大电流允许值:0.7A
FDG002最大工作频率:<1MHZ或未知
FDG002引脚数:4
FDG002最大耗散功率:0.7W
FDG002放大倍数:
FDG002图片代号:D-51
FDG002vtest:30
FDG002htest:999900
- FDG002atest:.7
FDG002wtest:.7
FDG002代换 FDG002用什么型号代替:
FDG价格
参考价格:¥1.1130
型号:FDG1024NZ 品牌:FAIRCHILD 备注:这里有FDG多少钱,2024年最近7天走势,今日出价,今日竞价,FDG批发/采购报价,FDG行情走势销售排行榜,FDG报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
FDG | Axial Vitreous Leaded Wirewound Resistors with CECC Approval 文件:134.6 Kbytes Page:7 Pages | VishayVishay Siliconix 威世科技 | ||
N-Channel 2.5V Specified PowerTrench MOSFET GeneralDescription ThisN-ChannelMOSFETisproducedusingFairchildSemiconductorsadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizetheon-stateresistanceandyetmaintainlowgatechargeforsuperiorswitchingperformance.Thesedevicesarewellsuitedforportablee | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
P-Channel 2.5V Specified PowerTrench??MOSFET GeneralDescription ThisP-ChannelMOSFETisproducedusingFairchildSemiconductorsadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizetheon-stateresistanceandyetmaintainlowgatechargeforsuperiorswitchingperformance.Thesedevicesarewellsuitedforportablee | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
Digital FET, N-Channel GeneralDescription ThisN-ChannelenhancementmodefieldeffecttransistorisproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance.Thisdevicehasbeendesignedespeciallyforlowvoltage | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
Digital FET, P-Channel GeneralDescription ThisP-ChannelenhancementmodefieldeffecttransistorisproducedusingFairchildSemiconductor’sproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessistailoredtominimizeonstateresistanceatlowgatedriveconditions.Thisdeviceisdesigned | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
P-Channel Logic Level PowerTrench MOSFET GeneralDescription ThisP-ChannelLogicLevelMOSFETisproducedusingFairchildSemiconductorsadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizeon-stateresistanceandyetmaintainsuperiorswitchingperformance. Thesedevicesarewellsuitedforlowvoltageandbatte | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
P-Channel 1.8V Specified PowerTrench MOSFET GeneralDescription ThisP-Channel1.8VspecifiedMOSFETusesFairchild’sadvancedlowvoltagePowerTrenchprocess.Ithasbeenoptimizedforbatterypowermanagementapplications. Features •–1.5A,–20V.RDS(ON)=140mΩ@VGS=–4.5V RDS(ON)=180mΩ@VGS= | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
P-Channel 1.8V Specified PowerTrench MOSFET GeneralDescription ThisP-Channel1.8VspecifiedMOSFETusesFairchild’sadvancedlowvoltagePowerTrenchprocess.Ithasbeenoptimizedforbatterypowermanagementapplications. Features •–1.5A,–20V.RDS(ON)=140mΩ@VGS=–4.5V RDS(ON)=180mΩ@VGS= | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
20V N-Channel PowerTrench MOSFET GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers.Ithasbeenoptimizeduseinsmallswitchingregulators,providinganextremelylowRDS(ON)andgatec | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
20V N-Channel PowerTrench MOSFET GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers.Ithasbeenoptimizeduseinsmallswitchingregulators,providinganextremelylowRDS(ON)andgatec | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
P-Channel 2.5V Specified PowerTrench MOSFET Description ThisP-Channel2.5VspecifiedMOSFETisproducedinaruggedgateversionofFairchildSemiconductor’sadvancedPowerTrenchprocess.Ithasbeenoptimized forpowermanagementapplicationsforawiderangeofgatedrivevoltages(2.5V–12V). Features •–1.5A,–20V.Rds(on)=0.1 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
20V N-Channel PowerTrench MOSFET GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers.Ithasbeenoptimizeduseinsmallswitchingregulators,providinganextremelylowRDS(ON)andgatec | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
P-Channel 1.8V Specified PowerTrench MOSFET GeneralDescription ThisP-Channel1.8VspecifiedMOSFETusesFairchild’sadvancedlowvoltagePowerTrenchprocess.Ithasbeenoptimizedforbatterypowermanagementapplications. Features •–2A,–12V.RDS(ON)=110mΩ@VGS=–4.5VRDS(ON)=150mΩ@VGS=–2.5VRDS(ON)=215mΩ@VGS=– | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
Dual N-Channel, Digital FET GeneralDescription ThesedualN-ChannellogiclevelenhancementmodefieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance.Thisdevicehasbeendesignedespeci | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
Dual N-Channel MOSFET ■Features ●VDS(V)=25V ●ID=220mA(VGS=4.5V) ●RDS(ON)6kVHumanBodyModel). | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | |||
Dual N-Channel, Digital FET GeneralDescription ThesedualN-ChannellogiclevelenhancementmodefieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance.Thisdevicehasbeendesignedespeci | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
Dual N-Channel, Digital FET Features •25V,0.22AContinuous,0.65APeak •RDS(ON)=4Ω@VGS=4.5V, •RDS(ON)=5Ω@VGS=2.7V. •VeryLowLevelGateDriveRequirementsallowingDirectop− Erationin3VCircuits(VGS(th)6kVHumanBodyModel) •CompactIndu | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
Dual P-Channel, Digital FET GeneralDescription ThesedualP-ChannellogiclevelenhancementmodefieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance.Thisdevicehasbeendesignedespeci | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
Dual P-Channel, Digital FET GeneralDescription ThesedualP-ChannellogiclevelenhancementmodefieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance.Thisdevicehasbeendesignedespeci | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
Dual N-Channel, Digital FET GeneralDescription ThesedualN-ChannellogiclevelenhancementmodefieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance.Thisdevicehasbeendesignedespeci | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
Dual N-Channel, Digital FET GeneralDescription ThesedualN-ChannellogiclevelenhancementmodefieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance.Thisdevicehasbeendesignedespeci | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
Dual P-Channel, Digital FET GeneralDescription ThesedualP-ChannellogiclevelenhancementmodefieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance.Thisdevicehasbeendesignedespeci | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
Dual P-Channel, Digital FET GeneralDescription ThesedualP-ChannellogiclevelenhancementmodefieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance.Thisdevicehasbeendesignedespeci | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
P-Channel 2.5V Specified PowerTrench MOSFET GeneralDescription ThisP-Channel2.5VspecifiedMOSFETusesaruggedgateversionofFairchild’sadvancedPowerTrenchprocess.Ithasbeenoptimizedforpowermanagement applicationswithawiderangeofgatedrivevoltage(2.5V–12V). Features –0.6A,–20V.Rds(on)=420mΩ@VGS=–4.5V | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
P-Channel 1.8V Specified PowerTrench MOSFET GeneralDescription ThisP-Channel1.8VspecifiedMOSFETusesFairchild’sadvancedlowvoltagePowerTrenchprocess.Ithasbeenoptimizedforbatterypowermanagementapplications. Features •–0.6A,–20V.RDS(ON)=0.40Ω@VGS=–4.5V RDS(ON)=0.55Ω@VGS=–2.5 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
P-Channel 1.8V Specified PowerTrench MOSFET GeneralDescription ThisP-Channel1.8VspecifiedMOSFETusesFairchild’sadvancedlowvoltagePowerTrenchprocess.Ithasbeenoptimizedforbatterypowermanagementapplications. Features •–0.6A,–20V.RDS(ON)=0.40Ω@VGS=–4.5V RDS(ON)=0.55Ω@VGS=–2.5 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
P-Channel 1.8V Specified PowerTrench MOSFET GeneralDescription ThisP-Channel1.8VspecifiedMOSFETusesFairchild’sadvancedlowvoltagePowerTrenchprocess.Ithasbeenoptimizedforbatterypowermanagementapplications. Features •–0.7A,–12V.RDS(ON)=270mΩ@VGS=–4.5VRDS(ON)=360mΩ@VGS=–2.5VRDS(ON)=650mΩ@VGS= | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
P-Channel 1.8V Specified PowerTrench MOSFET GeneralDescription ThisP-Channel1.8VspecifiedMOSFETusesFairchild’sadvancedlowvoltagePowerTrenchprocess.Ithasbeenoptimizedforbatterypowermanagementapplications. Features •–0.7A,–12V.RDS(ON)=270mΩ@VGS=–4.5VRDS(ON)=360mΩ@VGS=–2.5VRDS(ON)=650mΩ@VGS= | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
Dual 20v N-Channel PowerTrench MOSFET GeneralDescription ThisdualN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers.Ithasbeenoptimizeduseinsmallswitchingregulators,providinganextremelylowRDS(ON)andg | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
Dual P-Channel, Digital FET GeneralDescription ThesedualP-ChannellogiclevelenhancementmodeMOSFETareproducedusingFairchildSemiconductor’sadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizeon-stateresistance.Thisdevicehasbeendesignedespeciallyforlowvoltageapplicationsasarepl | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
Dual N & P Channel Digital FET GeneralDescription ThesedualN&P-ChannellogiclevelenhancementmodefieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance.Thisdevicehasbeendesigne | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
Dual N & P Channel Digital FET GeneralDescription ThesedualN&P-ChannellogiclevelenhancementmodefieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance.Thisdevicehasbeendesigne | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
Dual N & P Channel Digital FET GeneralDescription ThesedualN&P-ChannellogiclevelenhancementmodefieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance.Thisdevicehasbeendesigne | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
Dual N & P Channel Digital FET GeneralDescription ThesedualN&P-ChannellogiclevelenhancementmodefieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance.Thisdevicehasbeendesigne | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
Integrated Load Switch GeneralDescription Thisdeviceisparticularlysuitedforcompactpowermanagementinportableelectronicequipmentwhere2.5Vto8Vinputand0.6Aoutputcurrentcapabilityareneeded.ThisloadswitchintegratesasmallN-ChannelpowerMOSFET(Q1)whichdrivesalargeP-ChannelpowerMOSFET(Q | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
Integrated Load Switch GeneralDescription Thisdeviceisparticularlysuitedforcompactpowermanagementinportableelectronicequipmentwhere2.5Vto8Vinputand0.6Aoutputcurrentcapabilityareneeded.ThisloadswitchintegratesasmallN-ChannelpowerMOSFET(Q1)whichdrivesalargeP-ChannelpowerMOSFET(Q | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
Integrated Load Switch GeneralDescription Thisdeviceisintendedtobeconfiguredasaloadswitchandisparticularlysuitedforcompactcomputerperipheralswitchingapplicationswhere3Vto20Vinputand0.6Aoutputcurrentcapabilityareneeded.ThisdevicefeaturesasmallN-ChannelMOSFET(Q1)togetherwithal | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
Integrated Load Switch GeneralDescription Thisdeviceisparticularlysuitedforcompactpowermanagementinportableelectronicequipmentwhere2.5Vto8Vinputand0.8Aoutputcurrentcapabilityareneeded.ThisloadswitchintegratesasmallN-ChannelpowerMOSFET(Q1)thatdrivesalargeP-ChannelpowerMOSFET(Q2 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
20V N & P-Channel PowerTrench MOSFETs GeneralDescription TheN&P-ChannelMOSFETsareproducedusingFairchildSemiconductor’sadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizeon-stateresistanceandyetmaintainsuperiorswitchingperformance. Thesedeviceshavebeendesignedtoofferexceptionalpow | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
20V N & P-Channel PowerTrench짰MOSFETs GeneralDescription TheN&P-ChannelMOSFETsareproducedusingFairchildSemiconductor’sadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizeon-stateresistanceandyetmaintainsuperiorswitchingperformance. Thesedeviceshavebeendesignedtoofferexceptionalpow | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
20V N & P-Channel PowerTrench MOSFETs GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers.Ithasbeenoptimizeduseinsmallswitchingregulators,providinganextremelylowRDS(ON)andgatec | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
包装:袋 描述:MIDPIECE PAIR FOR FDG.1B. 连接器,互连器件 圆形连接器配件 | LEMOLEMO 雷莫 | |||
包装:散装 描述:CONN PLUG MALE 4P GOLD SLDR CUP 连接器,互连器件 圆形连接器组件 | LEMOLEMO 雷莫 | |||
Dual N-Channel PowerTrench짰 MOSFET 20 V, 1.2 A, 175 m廓 文件:298.71 Kbytes Page:7 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
Dual N-Channel 20 V (D-S) MOSFET 文件:932.61 Kbytes Page:7 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
N-Channel Logic Level PowerTrench MOSFET 文件:81.09 Kbytes Page:5 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
N-Channel Logic Level PowerTrench MOSFET 文件:81.09 Kbytes Page:5 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
Triple-Supply Power Management IC for Powering FPGAs and DSPs 文件:1.31298 Mbytes Page:29 Pages | TITexas Instruments 德州仪器美国德州仪器公司 | |||
20V N-Channel PowerTrenchO MOSFET 文件:497.41 Kbytes Page:5 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
20V N-Channel PowerTrenchO MOSFET 文件:497.41 Kbytes Page:5 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
P-Channel PowerTrench짰 MOSFET -20V, -2.6A, 97m廓 文件:458.81 Kbytes Page:6 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
N-Channel 100V Specified PowerTrenchMOSFET 文件:80.82 Kbytes Page:5 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
Single N-Channel PowerTrench짰 MOSFET 20 V, 2.2 A, 70 m廓 文件:289.67 Kbytes Page:7 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
FREQUENCY DOUBLER 文件:135.62 Kbytes Page:1 Pages | MERRIMAC Merrimac Industries | |||
Dual N-Channel, Digital FET 文件:351.8 Kbytes Page:5 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
Dual N-Channel, Digital FET 文件:351.8 Kbytes Page:5 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
Dual N-Channel, Digital FET 文件:413.86 Kbytes Page:5 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
Dual N-Channel 20 V (D-S) MOSFET 文件:931.51 Kbytes Page:7 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
Dual N-Channel, Digital FET 文件:413.86 Kbytes Page:5 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
Dual N-Channel, Digital FET 文件:58.96 Kbytes Page:5 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |
FDG产品属性
- 类型
描述
- 型号
FDG
- 功能描述
环形推拉式连接器 STRAIGHT PLUG LONG VERSION
- RoHS
否
- 制造商
Hirose Connector
- 产品类型
Connectors
- 系列
HR10
- 触点类型
Socket(Female)
- 外壳类型
Receptacle
- 触点数量
4
- 外壳大小
7
- 安装风格
Panel
- 端接类型
Solder
- 电流额定值
2 A
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ON |
2020+ |
SC70-6 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
FAIRCHILD/仙童 |
24+ |
SOT-363 |
154682 |
明嘉莱只做原装正品现货 |
|||
FAIRCHILD |
21+ |
SOT-363 |
3731 |
十年信誉,只做原装,有挂就有现货! |
|||
ON/安森美 |
21+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
||||
FAIRCHILD/仙童 |
21+ |
SOT363 |
20000 |
全新原装 公司现货 价优 |
|||
ON |
21+ |
SOT23-6 |
205101 |
原装现货假一赔十 |
|||
FAIRCHILD |
21+ |
SMD |
3780 |
只做原装正品假一赔十!正规渠道订货! |
|||
ON/安森美 |
21+ |
SC70-6 |
9080 |
只做原装,质量保证 |
|||
FAIRCHILD/仙童 |
2024+原装现货 |
SOT363 |
8950 |
BOM配单专家,发货快,价格低 |
|||
ON(安森美) |
23+ |
标准封装 |
7468 |
全新原装正品/价格优惠/质量保障 |
FDG规格书下载地址
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- FDA901
- FD911
- FD869
- FD50E
- FD50A
- FD100E
- FD100A
- FCS9010...9022
- FCS6208...6209
- FCK4D
- FCK4A
- FCK3C
- FCK3A
- FCK2B
- FCK2A
- FCK1C
- FCD400
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DdatasheetPDF页码索引
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