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CY14B104NA价格
参考价格：￥142.8307
型号：CY14B104NA-BA25XI 品牌：Cynergy 3 备注：这里有CY14B104NA多少钱，2024年最近7天走势，今日出价，今日竞价，CY14B104NA批发/采购报价，CY14B104NA行情走势销售排行榜，CY14B104NA报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
CY14B104NA | 4Mbit(512Kx8/256Kx16)nvSRAM FunctionalDescription TheCypressCY14B104LA/CY14B104NAisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewo | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 |  |   |
CY14B104NA | 4-Mbit(512Kx8/256Kx16)nvSRAM20ns,25ns,and45nsaccesstimes 文件：961.93 Kbytes Page：25 Pages | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | |
CY14B104NA | 4-Mbit(512K횞8/256K횞16)nvSRAM 文件：991.18 Kbytes Page：24 Pages | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | |
4Mbit(512Kx8/256Kx16)nvSRAM FunctionalDescription TheCypressCY14B104LA/CY14B104NAisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewo | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
4Mbit(512Kx8/256Kx16)nvSRAM FunctionalDescription TheCypressCY14B104LA/CY14B104NAisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewo | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
4Mbit(512Kx8/256Kx16)nvSRAM FunctionalDescription TheCypressCY14B104LA/CY14B104NAisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewo | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
4-Mbit(512Kx8/256Kx16)nvSRAM FunctionalDescription TheCypressCY14B104LA/CY14B104NAisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewo | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
4-Mbit(512Kx8/256Kx16)nvSRAM FunctionalDescription TheCypressCY14B104LA/CY14B104NAisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewo | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
4Mbit(512Kx8/256Kx16)nvSRAM FunctionalDescription TheCypressCY14B104LA/CY14B104NAisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewo | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
4Mbit(512Kx8/256Kx16)nvSRAM FunctionalDescription TheCypressCY14B104LA/CY14B104NAisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewo | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
4-Mbit(512Kx8/256Kx16)nvSRAM FunctionalDescription TheCypressCY14B104LA/CY14B104NAisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewo | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
4-Mbit(512Kx8/256Kx16)nvSRAM FunctionalDescription TheCypressCY14B104LA/CY14B104NAisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewo | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
4Mbit(512Kx8/256Kx16)nvSRAM FunctionalDescription TheCypressCY14B104LA/CY14B104NAisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewo | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
4Mbit(512Kx8/256Kx16)nvSRAM FunctionalDescription TheCypressCY14B104LA/CY14B104NAisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewo | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
4Mbit(512Kx8/256Kx16)nvSRAM FunctionalDescription TheCypressCY14B104LA/CY14B104NAisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewo | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
4-Mbit(512Kx8/256Kx16)nvSRAM FunctionalDescription TheCypressCY14B104LA/CY14B104NAisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewo | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
4-Mbit(512Kx8/256Kx16)nvSRAM FunctionalDescription TheCypressCY14B104LA/CY14B104NAisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewo | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
4Mbit(512Kx8/256Kx16)nvSRAM FunctionalDescription TheCypressCY14B104LA/CY14B104NAisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewo | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
4Mbit(512Kx8/256Kx16)nvSRAM FunctionalDescription TheCypressCY14B104LA/CY14B104NAisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewo | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
4Mbit(512Kx8/256Kx16)nvSRAM FunctionalDescription TheCypressCY14B104LA/CY14B104NAisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewo | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
4Mbit(512Kx8/256Kx16)nvSRAM FunctionalDescription TheCypressCY14B104LA/CY14B104NAisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewo | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
4-Mbit(512Kx8/256Kx16)nvSRAM FunctionalDescription TheCypressCY14B104LA/CY14B104NAisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewo | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
4-Mbit(512Kx8/256Kx16)nvSRAM FunctionalDescription TheCypressCY14B104LA/CY14B104NAisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewo | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
4Mbit(512Kx8/256Kx16)nvSRAM FunctionalDescription TheCypressCY14B104LA/CY14B104NAisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewo | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
4Mbit(512Kx8/256Kx16)nvSRAM FunctionalDescription TheCypressCY14B104LA/CY14B104NAisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewo | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
4Mbit(512Kx8/256Kx16)nvSRAM FunctionalDescription TheCypressCY14B104LA/CY14B104NAisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewo | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
4Mbit(512Kx8/256Kx16)nvSRAM FunctionalDescription TheCypressCY14B104LA/CY14B104NAisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewo | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
4-Mbit(512Kx8/256Kx16)nvSRAM FunctionalDescription TheCypressCY14B104LA/CY14B104NAisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewo | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
4-Mbit(512Kx8/256Kx16)nvSRAM FunctionalDescription TheCypressCY14B104LA/CY14B104NAisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewo | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
4Mbit(512Kx8/256Kx16)nvSRAM FunctionalDescription TheCypressCY14B104LA/CY14B104NAisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewo | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
4Mbit(512Kx8/256Kx16)nvSRAM FunctionalDescription TheCypressCY14B104LA/CY14B104NAisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewo | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
4Mbit(512Kx8/256Kx16)nvSRAM FunctionalDescription TheCypressCY14B104LA/CY14B104NAisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewo | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
4Mbit(512Kx8/256Kx16)nvSRAM FunctionalDescription TheCypressCY14B104LA/CY14B104NAisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewo | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
4-Mbit(512Kx8/256Kx16)nvSRAM FunctionalDescription TheCypressCY14B104LA/CY14B104NAisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewo | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
4-Mbit(512Kx8/256Kx16)nvSRAM FunctionalDescription TheCypressCY14B104LA/CY14B104NAisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewo | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
4Mbit(512Kx8/256Kx16)nvSRAM FunctionalDescription TheCypressCY14B104LA/CY14B104NAisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewo | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
4Mbit(512Kx8/256Kx16)nvSRAM FunctionalDescription TheCypressCY14B104LA/CY14B104NAisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewo | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
4Mbit(512Kx8/256Kx16)nvSRAM FunctionalDescription TheCypressCY14B104LA/CY14B104NAisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewo | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
4Mbit(512Kx8/256Kx16)nvSRAM FunctionalDescription TheCypressCY14B104LA/CY14B104NAisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewo | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
4-Mbit(512Kx8/256Kx16)nvSRAM FunctionalDescription TheCypressCY14B104LA/CY14B104NAisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewo | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
4-Mbit(512Kx8/256Kx16)nvSRAM FunctionalDescription TheCypressCY14B104LA/CY14B104NAisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewo | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
4Mbit(512Kx8/256Kx16)nvSRAM FunctionalDescription TheCypressCY14B104LA/CY14B104NAisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewo | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
4Mbit(512Kx8/256Kx16)nvSRAM FunctionalDescription TheCypressCY14B104LA/CY14B104NAisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewo | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
4Mbit(512Kx8/256Kx16)nvSRAM FunctionalDescription TheCypressCY14B104LA/CY14B104NAisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewo | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
4Mbit(512Kx8/256Kx16)nvSRAM FunctionalDescription TheCypressCY14B104LA/CY14B104NAisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewo | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
4Mbit(512Kx8/256Kx16)nvSRAM FunctionalDescription TheCypressCY14B104LA/CY14B104NAisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewo | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
4Mbit(512Kx8/256Kx16)nvSRAM FunctionalDescription TheCypressCY14B104LA/CY14B104NAisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewo | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
4Mbit(512Kx8/256Kx16)nvSRAM FunctionalDescription TheCypressCY14B104LA/CY14B104NAisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewo | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
4Mbit(512Kx8/256Kx16)nvSRAM FunctionalDescription TheCypressCY14B104LA/CY14B104NAisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewo | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
4-Mbit(512Kx8/256Kx16)nvSRAM FunctionalDescription TheCypressCY14B104LA/CY14B104NAisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewo | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
4-Mbit(512Kx8/256Kx16)nvSRAM FunctionalDescription TheCypressCY14B104LA/CY14B104NAisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewo | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
4Mbit(512Kx8/256Kx16)nvSRAM FunctionalDescription TheCypressCY14B104LA/CY14B104NAisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewo | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
4Mbit(512Kx8/256Kx16)nvSRAM FunctionalDescription TheCypressCY14B104LA/CY14B104NAisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewo | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
4Mbit(512Kx8/256Kx16)nvSRAM FunctionalDescription TheCypressCY14B104LA/CY14B104NAisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewo | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
4Mbit(512Kx8/256Kx16)nvSRAM FunctionalDescription TheCypressCY14B104LA/CY14B104NAisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewo | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
4-Mbit(512Kx8/256Kx16)nvSRAM FunctionalDescription TheCypressCY14B104LA/CY14B104NAisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewo | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
4-Mbit(512Kx8/256Kx16)nvSRAM FunctionalDescription TheCypressCY14B104LA/CY14B104NAisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewo | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
4Mbit(512Kx8/256Kx16)nvSRAM FunctionalDescription TheCypressCY14B104LA/CY14B104NAisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewo | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
4-Mbit(512K횞8/256K횞16)nvSRAM 文件：991.18 Kbytes Page：24 Pages | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
4-Mbit(512Kx8/256Kx16)nvSRAM20ns,25ns,and45nsaccesstimes 文件：961.93 Kbytes Page：25 Pages | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | |
CY14B104NA产品属性
- 类型
描述
- 型号
CY14B104NA
- 制造商
CYPRESS
- 制造商全称
Cypress Semiconductor
- 功能描述
4 Mbit(512K x 8/256K x 16) nvSRAM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CYPRESS/赛普拉斯 |
2022+ |
BGA |
10 |
原厂授权代理 价格绝对优势 |
|||
CYPRESS |
23+ |
44-TSOP |
8000 |
只做原装正品,假一罚十 |
|||
Cypress |
23+ |
BGA |
8650 |
受权代理!全新原装现货特价热卖! |
|||
CYPRESS |
2023+ |
CYPRESS |
9240 |
专注配单,只做原装进口现货 |
|||
CYPRESS |
23+ |
CYPRESS |
8000 |
只做原装现货 |
|||
CYPRESS/赛普拉斯 |
2021+ |
20 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
CYPRESS |
14+ |
BGA |
980 |
全新原装 实单必成 |
|||
Cypress Semiconductor Corp |
24+ |
48-TFBGA |
9350 |
独立分销商,公司只做原装，诚心经营,免费试样正品保证 |
|||
Cypress(赛普拉斯) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
SPANSION(飞索) |
1921+ |
FBGA-48(6x10) |
3575 |
向鸿仓库现货,优势绝对的原装! |
CY14B104NA芯片相关品牌
CY14B104NA规格书下载地址
CY14B104NA参数引脚图相关
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CY14B104NA数据表相关新闻
CXB3590-0000-000N0YAD32Q
產品:WhiteCoBLEDs 安裝風格:SMD/SMT 封裝/外殼:COB-Chip-on-Board 照明色彩:WarmWhite 波長/色溫:3200K 發光強度:- 光通量/輻射通量:9000lm 顯色指數-CRI:93 視角:115deg If-順向電流:2.4A Vf-順向電壓:36V 額定功率:- 長度:34.85mm 寬度:34.85mm 高度:1.7
2020-12-21CY15B108QN-40LPXI
CY15B108QN-40LPXI
2020-11-30CY2071ASC-198 原装正品 贸泽微优势供应
CY2071ASC-198原装正品贸泽微优势供应
2020-11-3CY10C680J，CY10C6R2J，CY10C750J，CY10C820J，CY10C910J
CY10C680J，CY10C6R2J，CY10C750J，CY10C820J，CY10C910J
2020-4-1CXD2163BR
CXD2163BR，全新原装当天发货或门市自取0755-82732291.
2019-12-31CY14B108N-BA25XI进口原装，主营军工级IC
CY14B108N-BA25XIXILINX(赛灵思)，ALTERA（阿尔特拉），军工级IC专业优势渠道
2019-10-18
DdatasheetPDF页码索引
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