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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
OptiMOSTMPower-Transistor,60V Features •Dual-sidecooledpackagewithlowestJunction-topthermalresistance •175°Crated •OptimizedforhighperformanceSMPS,e.g.sync.rec. •100avalanchetested •Superiorthermalresistance •N-channel •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249- | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |  |   | |
OptiMOSTM3Power-Transistor 文件：567.65 Kbytes Page：9 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
NewOptiMOS??40Vand60V 文件：1.02174 Mbytes Page：2 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
OptiMOSTMPower-Transistor,60V 文件：1.12279 Mbytes Page：12 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
OptiMOS3Power-Transistor Features •Idealforhighfrequencyswitchingandsync.rec. •OptimizedtechnologyforDC/DCconverters •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •Superiorthermalresistance •N-channel,logiclevel •100avalanchetested •Pb-freeplating;RoHSc | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
英飞凌 |
21+ |
PG-WSON-8 |
6000 |
绝对原裝现货 |
|||
Infineon/英飞凌 |
21+ |
PG-WSON-8 |
13880 |
公司只售原装,支持实单 |
|||
Infineon Technologies |
23+ |
PG-TDSON-8-7 |
30000 |
晶体管-分立半导体产品-原装正品 |
|||
Infineon/英飞凌 |
21+ |
PG-WSON-8 |
10000 |
原装,品质保证,请来电咨询 |
|||
INFINEON |
23/22+ |
NA |
2000 |
全线可订货.含税开票 |
|||
Infineon/英飞凌 |
21+ |
PG-WSON-8 |
6000 |
原装现货正品 |
|||
Infineon/英飞凌 |
23+ |
PG-WSON-8 |
10000 |
原装正品，支持实单 |
|||
Infineon/英飞凌 |
23+ |
PG-WSON-8 |
25000 |
原装正品,假一赔十! |
|||
Infineon |
23+ |
PG-WSON-8 |
15500 |
英飞凌优势渠道全系列在售 |
|||
Infineon/英飞凌 |
2022+ |
PG-WSON-8 |
48000 |
只做原装,原装,假一罚十 |
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焕盛达竭诚为您提供一站式配套服务。当天下单，当天发货；
2020-10-9BSC018NE2LS
产品属性属性值搜索类似 制造商:Infineon 产品种类:MOSFET RoHS:详细信息 技术:Si 安装风格:SMD/SMT 封装/箱体:TDSON-8 通道数量:1Channel 晶体管极性:N-Channel Vds-漏源极击穿电压:25V Id-连续漏极电流:100A RdsOn-漏源导通电阻:1.8mOhms Vgs-栅极-源极电压:20V Vgs
2019-10-11
DdatasheetPDF页码索引
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