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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
BSC028N06LSG | OptiMOSTM3Power-Transistor 文件：567.65 Kbytes Page：9 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |  |   |
OptiMOSTMPower-Transistor,60V Features •Dual-sidecooledpackagewithlowestJunction-topthermalresistance •175°Crated •OptimizedforhighperformanceSMPS,e.g.sync.rec. •100avalanchetested •Superiorthermalresistance •N-channel •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249- | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
NewOptiMOS??40Vand60V 文件：1.02174 Mbytes Page：2 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
OptiMOSTMPower-Transistor,60V 文件：1.12279 Mbytes Page：12 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
OptiMOS3Power-Transistor Features •Idealforhighfrequencyswitchingandsync.rec. •OptimizedtechnologyforDC/DCconverters •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •Superiorthermalresistance •N-channel,logiclevel •100avalanchetested •Pb-freeplating;RoHSc | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | |
BSC028N06LSG产品属性
- 类型
描述
- 型号
BSC028N06LSG
- 制造商
INFINEON
- 制造商全称
Infineon Technologies AG
- 功能描述
OptiMOSTM3 Power-Transistor
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon/英飞凌 |
TDSON-8 |
9266 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
||||
INFINEON/英飞凌 |
2022+ |
QFN |
45000 |
我司100%原装正品现货,现货众多欢迎加微信 |
|||
INF |
23+ |
NA/ |
3288 |
原装现货,当天可交货,原型号开票 |
|||
INFINEON |
2017+ |
FDSON8 |
54789 |
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票 |
|||
INF |
2048+ |
SOP-8 |
9851 |
只做原装正品现货!或订货假一赔十! |
|||
INFINEON/英飞凌 |
23+ |
QFN8 |
96880 |
只做原装,欢迎来电资询 |
|||
Infineon/英飞凌 |
22+ |
20000 |
全新、原装、现货 |
||||
INFINEON |
22+23+ |
TDSON-8 |
24512 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
INFINEO |
21+ |
FDSON8 |
12588 |
原装正品,自己库存 假一罚十 |
|||
INFINEON/英飞凌 |
QFN8 |
265209 |
假一罚十原包原标签常备现货! |
BSC028N06LSG芯片相关品牌
BSC028N06LSG规格书下载地址
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焕盛达竭诚为您提供一站式配套服务。当天下单，当天发货；
2020-10-9BSC018NE2LS
产品属性属性值搜索类似 制造商:Infineon 产品种类:MOSFET RoHS:详细信息 技术:Si 安装风格:SMD/SMT 封装/箱体:TDSON-8 通道数量:1Channel 晶体管极性:N-Channel Vds-漏源极击穿电压:25V Id-连续漏极电流:100A RdsOn-漏源导通电阻:1.8mOhms Vgs-栅极-源极电压:20V Vgs
2019-10-11
DdatasheetPDF页码索引
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