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BFG54晶体管资料
BFG54别名:BFG54三极管、BFG54晶体管、BFG54晶体三极管
BFG54生产厂家:英国Mullard有限公司
BFG54制作材料:Si-PNP
BFG54性质:超高频/特高频 (UHF)_微波 (MW)
BFG54封装形式:贴片封装
BFG54极限工作电压:18V
BFG54最大电流允许值:0.15A
BFG54最大工作频率:4.5GHZ
BFG54引脚数:4
BFG54最大耗散功率:1W
BFG54放大倍数:
BFG54图片代号:G-129
BFG54vtest:18
BFG54htest:4500000000
- BFG54atest:.15
BFG54wtest:1
BFG54代换 BFG54用什么型号代替:
BFG54价格
参考价格:¥0.4500
型号:BFG540 品牌:NXP 备注:这里有BFG54多少钱,2024年最近7天走势,今日出价,今日竞价,BFG54批发/采购报价,BFG54行情走势销售排行榜,BFG54报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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NPN 9 GHz wideband transistor DESCRIPTION NPNsiliconplanarepitaxialtransistors,intendedforwidebandapplicationsintheGHzrange,suchasanaloganddigitalcellulartelephones,cordlesstelephones(CT1,CT2,DECT,etc.),radardetectors,satelliteTVtuners(SATV),MATV/CATVamplifiersandrepeateramplifiersinfibre | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
NPN 9 GHz wideband transistor DESCRIPTION NPNsiliconplanarepitaxialtransistors,intendedforwidebandapplicationsintheGHzrange,suchasanaloganddigitalcellulartelephones,cordlesstelephones(CT1,CT2,DECT,etc.),radardetectors,satelliteTVtuners(SATV),MATV/CATVamplifiersandrepeateramplifiersinfibre | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
NPN SILICON RF TRANSISTOR Feature Highgain:︱S21e︱2TYP.Valueis13dB@VCE=8V,IC=40mA,f=0.9GHz Lownoise:NFTYP.Valueis1.8dB@VCE=10V,IC=10mA,f=0.9GHz fT(TYP.):TYP.Valueis9GHz@VCE=8V,IC=40mA,f=1GHz | SKTECHNOLGYSHIKE Electronics 時科广东時科微实业有限公司 | |||
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
isc Silicon NPN RF Transistor DESCRIPTION •LowNoiseFigure NF=1.3dBTYP.@VCE=8V,IC=10mA,f=900MHz •HighGain ︱S21︱2=16dBTYP.@VCE=8V,IC=40mA,f=900MHz •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •Designedforuseinlownoise,h | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
NPN 9GHz Wideband Transistor ■Features ●Highpowergain ●Lownoisefigure ●Hightransitionfrequency ●Goldmetallizationensuresexcellentreliability. | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | |||
NPN 9 GHz wideband transistor DESCRIPTION NPNsiliconplanarepitaxialtransistors,intendedforwidebandapplicationsintheGHzrange,suchasanaloganddigitalcellulartelephones,cordlesstelephones(CT1,CT2,DECT,etc.),radardetectors,satelliteTVtuners(SATV),MATV/CATVamplifiersandrepeateramplifiersinfibre | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
NPN 9 GHz wideband transistor DESCRIPTION NPNsiliconplanarepitaxialtransistors,intendedforwidebandapplicationsintheGHzrange,suchasanaloganddigitalcellulartelephones,cordlesstelephones(CT1,CT2,DECT,etc.),radardetectors,satelliteTVtuners(SATV),MATV/CATVamplifiersandrepeateramplifiersinfibre | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
NPN 9 GHz wideband transistors DESCRIPTION NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT143Bplasticpackage. FEATURES •Highpowergain •Lownoisefigure •Hightransitionfrequency •Goldmetallizationensuresexcellentreliability. APPLICATIONS RFfrontendapplicationsintheGHzrange, | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
NPN 9 GHz wideband transistors DESCRIPTION NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Nplasticpackage. FEATURES •Highpowergain •Lownoisefigure •Hightransitionfrequency •Goldmetallizationensuresexcellentreliability. APPLICATIONS RFfrontendapplicationsintheGHzrange,su | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
NPN 9 GHz wideband transistors DESCRIPTION NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT143Bplasticpackage. FEATURES •Highpowergain •Lownoisefigure •Hightransitionfrequency •Goldmetallizationensuresexcellentreliability. APPLICATIONS RFfrontendapplicationsintheGHzrange,su | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
NPN 9 GHz wideband transistors DESCRIPTION NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Nplasticpackage. FEATURES •Highpowergain •Lownoisefigure •Hightransitionfrequency •Goldmetallizationensuresexcellentreliability. APPLICATIONS RFfrontendapplicationsintheGHzrange,su | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
NPN 9 GHz wideband transistor DESCRIPTION NPNsiliconplanarepitaxialtransistors,intendedforwidebandapplicationsintheGHzrange,suchasanaloganddigitalcellulartelephones,cordlesstelephones(CT1,CT2,DECT,etc.),radardetectors,satelliteTVtuners(SATV),MATV/CATVamplifiersandrepeateramplifiersinfibre | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
NPN 9 GHz wideband transistors DESCRIPTION NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT143Bplasticpackage. FEATURES •Highpowergain •Lownoisefigure •Hightransitionfrequency •Goldmetallizationensuresexcellentreliability. APPLICATIONS RFfrontendapplicationsintheGHzrange,su | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
NPN 9 GHz wideband transistors DESCRIPTION NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT143Bplasticpackage. FEATURES •Highpowergain •Lownoisefigure •Hightransitionfrequency •Goldmetallizationensuresexcellentreliability. APPLICATIONS RFfrontendapplicationsintheGHzrange, | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
NPN 9 GHz wideband transistor DESCRIPTION NPNsiliconplanarepitaxialtransistorsinplastic,4-pindual-emitterSOT343NandSOT343Rpackages. FEATURES •Highpowergain •Lownoisefigure •Hightransitionfrequency •Goldmetallizationensuresexcellentreliability. APPLICATIONS Theyareintend | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
NPN 9 GHz wideband transistor DESCRIPTION NPNsiliconplanarepitaxialtransistors,intendedforwidebandapplicationsintheGHzrange,suchasanaloganddigitalcellulartelephones,cordlesstelephones(CT1,CT2,DECT,etc.),radardetectors,satelliteTVtuners(SATV),MATV/CATVamplifiersandrepeateramplifiersinfibre | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
NPN 9 GHz wideband transistor DESCRIPTION NPNsiliconplanarepitaxialtransistors,intendedforwidebandapplicationsintheGHzrange,suchasanaloganddigitalcellulartelephones,cordlesstelephones(CT1,CT2,DECT,etc.),radardetectors,satelliteTVtuners(SATV),MATV/CATVamplifiersandrepeateramplifiersinfibre | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
NPN 9 GHz wideband transistor DESCRIPTION NPNsiliconplanarepitaxialtransistorsinplastic,4-pindual-emitterSOT343NandSOT343Rpackages. FEATURES •Highpowergain •Lownoisefigure •Hightransitionfrequency •Goldmetallizationensuresexcellentreliability. APPLICATIONS Theyareintend | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
NPN 9 GHz wideband transistor DESCRIPTION NPNsiliconplanarepitaxialtransistorsinplastic,4-pindual-emitterSOT343NandSOT343Rpackages. FEATURES •Highpowergain •Lownoisefigure •Hightransitionfrequency •Goldmetallizationensuresexcellentreliability. APPLICATIONS Theyareintend | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
NPN 9 GHz wideband transistor DESCRIPTION NPNsiliconplanarepitaxialtransistors,intendedforwidebandapplicationsintheGHzrange,suchasanaloganddigitalcellulartelephones,cordlesstelephones(CT1,CT2,DECT,etc.),radardetectors,satelliteTVtuners(SATV),MATV/CATVamplifiersandrepeateramplifiersinfibre | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
NPN SILICON RF TRANSISTOR Feature Highgain:︱S21e︱2TYP.Valueis13dB@VCE=8V,IC=40mA,f=0.9GHz Lownoise:NFTYP.Valueis1.8dB@VCE=10V,IC=10mA,f=0.9GHz fT(TYP.):TYP.Valueis9GHz@VCE=8V,IC=40mA,f=1GHz | SKTECHNOLGYSHIKE Electronics 時科广东時科微实业有限公司 | |||
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
NPN SILICON RF TRANSISTOR Feature Highgain:︱S21e︱2TYP.Valueis13dB@VCE=8V,IC=40mA,f=0.9GHz Lownoise:NFTYP.Valueis1.8dB@VCE=10V,IC=10mA,f=0.9GHz fT(TYP.):TYP.Valueis9GHz@VCE=8V,IC=40mA,f=1GHz | SKTECHNOLGYSHIKE Electronics 時科广东時科微实业有限公司 | |||
NPN 9 GHz wideband transistor DESCRIPTION NPNsiliconplanarepitaxialtransistor,intendedforwidebandapplicationsintheGHzrange,suchasanaloganddigitalcellulartelephones,cordlesstelephones(CT1,CT2,DECT,etc.),radardetectors,satelliteTVtuners(SATV),MATV/CATVamplifiersandrepeateramplifiersinfibr | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
isc Silicon NPN RF Transistor 文件:245.37 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
isc Silicon NPN RF Transistor 文件:343.31 Kbytes Page:3 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
封装/外壳:TO-253-4,TO-253AA 包装:卷带(TR) 描述:RF TRANS NPN 15V 9GHZ SOT143B 分立半导体产品 晶体管 - 双极(BJT)- 射频 | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
封装/外壳:SOT-143R 包装:卷带(TR) 描述:RF TRANS NPN 15V 9GHZ SOT143R 分立半导体产品 晶体管 - 双极(BJT)- 射频 | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
NPN 9 GHz wideband transistor 文件:138.25 Kbytes Page:16 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | |||
isc Silicon NPN RF Transistor 文件:343.31 Kbytes Page:3 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
isc Silicon NPN RF Transistor 文件:245.37 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
NPN 9 GHz wideband transistor 文件:138.25 Kbytes Page:16 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | |||
NPN 9 GHz wideband transistor 文件:136.6 Kbytes Page:16 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | |||
NPN 9 GHz wideband transistor 文件:136.6 Kbytes Page:16 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | |||
isc Silicon NPN RF Transistor 文件:343.31 Kbytes Page:3 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
NPN 9 GHz wideband transistor 文件:119.42 Kbytes Page:12 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | |||
NPN 9 GHz wideband transistor 文件:119.42 Kbytes Page:12 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 |
BFG54产品属性
- 类型
描述
- 型号
BFG54
- 制造商
PHILIPS
- 制造商全称
NXP Semiconductors
- 功能描述
NPN 9 GHz wideband transistor
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
NXP |
14+ |
SOT343 |
10988 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
NXP/恩智浦 |
2022 |
SOT-343 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
|||
NEXPERIA/安世三极管 |
21+ |
SOT-143 |
18500 |
16年电子元件现货供应商 终端BOM表可配单提供样品 |
|||
NEXPERIA/安世 |
21+ |
SOT-343 |
600000 |
航宇科工半导体-中国航天科工集团战略合作伙伴! |
|||
PHI |
2015+ |
SOT343 |
19889 |
一级代理原装现货,特价热卖! |
|||
NXP/恩智浦 |
23+ |
SOT143 |
30855 |
原装现货 |
|||
NXP |
21+ |
SOT143 |
60000 |
原厂订货价格优势,可开13%的增值税票 |
|||
21+ |
SOP-8 |
63542 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
||||
NXP(PHILIPS) |
2020+ |
SOT343 |
985000 |
100%进口原装正品公司现货库存 |
|||
NXP |
23+ |
SOT143 |
12300 |
BFG54规格书下载地址
BFG54参数引脚图相关
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DdatasheetPDF页码索引
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