BFG540晶体管资料

  • BFG540别名:BFG540三极管、BFG540晶体管、BFG540晶体三极管

  • BFG540生产厂家

  • BFG540制作材料:Si-NPN

  • BFG540性质:表面帖装型 (SMD)_超高频/特高频 (UHF)

  • BFG540封装形式:贴片封装

  • BFG540极限工作电压:20V

  • BFG540最大电流允许值:0.12A

  • BFG540最大工作频率:9GHZ

  • BFG540引脚数:3

  • BFG540最大耗散功率

  • BFG540放大倍数

  • BFG540图片代号:H-17

  • BFG540vtest:20

  • BFG540htest:9000000000

  • BFG540atest:.12

  • BFG540wtest:0

  • BFG540代换 BFG540用什么型号代替

BFG540价格

参考价格:¥0.4500

型号:BFG540 品牌:NXP 备注:这里有BFG540多少钱,2024年最近7天走势,今日出价,今日竞价,BFG540批发/采购报价,BFG540行情走势销售排行榜,BFG540报价。
型号 功能描述 生产厂家&企业 LOGO 操作
BFG540

NPN9GHzwidebandtransistor

DESCRIPTION NPNsiliconplanarepitaxialtransistors,intendedforwidebandapplicationsintheGHzrange,suchasanaloganddigitalcellulartelephones,cordlesstelephones(CT1,CT2,DECT,etc.),radardetectors,satelliteTVtuners(SATV),MATV/CATVamplifiersandrepeateramplifiersinfibre

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BFG540

NPN9GHzwidebandtransistor

DESCRIPTION NPNsiliconplanarepitaxialtransistors,intendedforwidebandapplicationsintheGHzrange,suchasanaloganddigitalcellulartelephones,cordlesstelephones(CT1,CT2,DECT,etc.),radardetectors,satelliteTVtuners(SATV),MATV/CATVamplifiersandrepeateramplifiersinfibre

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BFG540

NPNSILICONRFTRANSISTOR

Feature Highgain:︱S21e︱2TYP.Valueis13dB@VCE=8V,IC=40mA,f=0.9GHz Lownoise:NFTYP.Valueis1.8dB@VCE=10V,IC=10mA,f=0.9GHz fT(TYP.):TYP.Valueis9GHz@VCE=8V,IC=40mA,f=1GHz

SKTECHNOLGYSHIKE Electronics

時科广东時科微实业有限公司

SKTECHNOLGY
BFG540

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BFG540

iscSiliconNPNRFTransistor

DESCRIPTION •LowNoiseFigure NF=1.3dBTYP.@VCE=8V,IC=10mA,f=900MHz •HighGain ︱S21︱2=16dBTYP.@VCE=8V,IC=40mA,f=900MHz •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •Designedforuseinlownoise,h

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
BFG540

NPN9GHzWidebandTransistor

■Features ●Highpowergain ●Lownoisefigure ●Hightransitionfrequency ●Goldmetallizationensuresexcellentreliability.

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN
BFG540

iscSiliconNPNRFTransistor

文件:245.37 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
BFG540

iscSiliconNPNRFTransistor

文件:343.31 Kbytes Page:3 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

NPN9GHzwidebandtransistors

DESCRIPTION NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT143Bplasticpackage. FEATURES •Highpowergain •Lownoisefigure •Hightransitionfrequency •Goldmetallizationensuresexcellentreliability. APPLICATIONS RFfrontendapplicationsintheGHzrange,

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

NPN9GHzwidebandtransistors

DESCRIPTION NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Nplasticpackage. FEATURES •Highpowergain •Lownoisefigure •Hightransitionfrequency •Goldmetallizationensuresexcellentreliability. APPLICATIONS RFfrontendapplicationsintheGHzrange,su

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

NPN9GHzwidebandtransistors

DESCRIPTION NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT143Bplasticpackage. FEATURES •Highpowergain •Lownoisefigure •Hightransitionfrequency •Goldmetallizationensuresexcellentreliability. APPLICATIONS RFfrontendapplicationsintheGHzrange,su

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

NPN9GHzwidebandtransistor

DESCRIPTION NPNsiliconplanarepitaxialtransistors,intendedforwidebandapplicationsintheGHzrange,suchasanaloganddigitalcellulartelephones,cordlesstelephones(CT1,CT2,DECT,etc.),radardetectors,satelliteTVtuners(SATV),MATV/CATVamplifiersandrepeateramplifiersinfibre

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

NPN9GHzwidebandtransistor

DESCRIPTION NPNsiliconplanarepitaxialtransistors,intendedforwidebandapplicationsintheGHzrange,suchasanaloganddigitalcellulartelephones,cordlesstelephones(CT1,CT2,DECT,etc.),radardetectors,satelliteTVtuners(SATV),MATV/CATVamplifiersandrepeateramplifiersinfibre

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

NPN9GHzwidebandtransistors

DESCRIPTION NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Nplasticpackage. FEATURES •Highpowergain •Lownoisefigure •Hightransitionfrequency •Goldmetallizationensuresexcellentreliability. APPLICATIONS RFfrontendapplicationsintheGHzrange,su

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

NPN9GHzwidebandtransistor

DESCRIPTION NPNsiliconplanarepitaxialtransistors,intendedforwidebandapplicationsintheGHzrange,suchasanaloganddigitalcellulartelephones,cordlesstelephones(CT1,CT2,DECT,etc.),radardetectors,satelliteTVtuners(SATV),MATV/CATVamplifiersandrepeateramplifiersinfibre

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

NPN9GHzwidebandtransistors

DESCRIPTION NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT143Bplasticpackage. FEATURES •Highpowergain •Lownoisefigure •Hightransitionfrequency •Goldmetallizationensuresexcellentreliability. APPLICATIONS RFfrontendapplicationsintheGHzrange,su

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

NPN9GHzwidebandtransistors

DESCRIPTION NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT143Bplasticpackage. FEATURES •Highpowergain •Lownoisefigure •Hightransitionfrequency •Goldmetallizationensuresexcellentreliability. APPLICATIONS RFfrontendapplicationsintheGHzrange,

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

NPN9GHzwidebandtransistor

DESCRIPTION NPNsiliconplanarepitaxialtransistorsinplastic,4-pindual-emitterSOT343NandSOT343Rpackages. FEATURES •Highpowergain •Lownoisefigure •Hightransitionfrequency •Goldmetallizationensuresexcellentreliability. APPLICATIONS Theyareintend

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

NPN9GHzwidebandtransistor

DESCRIPTION NPNsiliconplanarepitaxialtransistors,intendedforwidebandapplicationsintheGHzrange,suchasanaloganddigitalcellulartelephones,cordlesstelephones(CT1,CT2,DECT,etc.),radardetectors,satelliteTVtuners(SATV),MATV/CATVamplifiersandrepeateramplifiersinfibre

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

NPN9GHzwidebandtransistor

DESCRIPTION NPNsiliconplanarepitaxialtransistorsinplastic,4-pindual-emitterSOT343NandSOT343Rpackages. FEATURES •Highpowergain •Lownoisefigure •Hightransitionfrequency •Goldmetallizationensuresexcellentreliability. APPLICATIONS Theyareintend

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

NPN9GHzwidebandtransistor

DESCRIPTION NPNsiliconplanarepitaxialtransistors,intendedforwidebandapplicationsintheGHzrange,suchasanaloganddigitalcellulartelephones,cordlesstelephones(CT1,CT2,DECT,etc.),radardetectors,satelliteTVtuners(SATV),MATV/CATVamplifiersandrepeateramplifiersinfibre

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

NPN9GHzwidebandtransistor

DESCRIPTION NPNsiliconplanarepitaxialtransistorsinplastic,4-pindual-emitterSOT343NandSOT343Rpackages. FEATURES •Highpowergain •Lownoisefigure •Hightransitionfrequency •Goldmetallizationensuresexcellentreliability. APPLICATIONS Theyareintend

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

NPN9GHzwidebandtransistor

DESCRIPTION NPNsiliconplanarepitaxialtransistors,intendedforwidebandapplicationsintheGHzrange,suchasanaloganddigitalcellulartelephones,cordlesstelephones(CT1,CT2,DECT,etc.),radardetectors,satelliteTVtuners(SATV),MATV/CATVamplifiersandrepeateramplifiersinfibre

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

NPNSILICONRFTRANSISTOR

Feature Highgain:︱S21e︱2TYP.Valueis13dB@VCE=8V,IC=40mA,f=0.9GHz Lownoise:NFTYP.Valueis1.8dB@VCE=10V,IC=10mA,f=0.9GHz fT(TYP.):TYP.Valueis9GHz@VCE=8V,IC=40mA,f=1GHz

SKTECHNOLGYSHIKE Electronics

時科广东時科微实业有限公司

SKTECHNOLGY

NPNSILICONRFTRANSISTOR

Feature Highgain:︱S21e︱2TYP.Valueis13dB@VCE=8V,IC=40mA,f=0.9GHz Lownoise:NFTYP.Valueis1.8dB@VCE=10V,IC=10mA,f=0.9GHz fT(TYP.):TYP.Valueis9GHz@VCE=8V,IC=40mA,f=1GHz

SKTECHNOLGYSHIKE Electronics

時科广东時科微实业有限公司

SKTECHNOLGY

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

封装/外壳:TO-253-4,TO-253AA 包装:卷带(TR) 描述:RF TRANS NPN 15V 9GHZ SOT143B 分立半导体产品 晶体管 - 双极(BJT)- 射频

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

封装/外壳:SOT-143R 包装:卷带(TR) 描述:RF TRANS NPN 15V 9GHZ SOT143R 分立半导体产品 晶体管 - 双极(BJT)- 射频

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

NPN9GHzwidebandtransistor

文件:138.25 Kbytes Page:16 Pages

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

泉州锦美泉州锦美电子有限公司

JMNIC

iscSiliconNPNRFTransistor

文件:343.31 Kbytes Page:3 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

iscSiliconNPNRFTransistor

文件:245.37 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

NPN9GHzwidebandtransistor

文件:138.25 Kbytes Page:16 Pages

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

泉州锦美泉州锦美电子有限公司

JMNIC

NPN9GHzwidebandtransistor

文件:136.6 Kbytes Page:16 Pages

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

泉州锦美泉州锦美电子有限公司

JMNIC

NPN9GHzwidebandtransistor

文件:136.6 Kbytes Page:16 Pages

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

泉州锦美泉州锦美电子有限公司

JMNIC

iscSiliconNPNRFTransistor

文件:343.31 Kbytes Page:3 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

Pentium4ProcessorsSupportingHyper-ThreadingTechnology

Introduction TheIntel®Pentium®4processoron90nmprocessinthe775-landpackageisafollowontothePentium4processorinthe478-pinpackagewithenhancementstotheIntelNetBurst®microarchitecture.ThePentium4processoron90nmprocessinthe775-landpackageusesFlipChipLandGr

IntelIntel Corporation(Integrated Electronics Corporation)

英特尔英特尔(集成电子公司)

Intel

5MMLED

文件:116 Kbytes Page:5 Pages

HBHB Electronic Components

HB Electronic Components

HB

SILICONRECTIFIER

文件:118.76 Kbytes Page:3 Pages

POWEREX

POWEREX

POWEREX

MISCELLANEOUSHARDWARE-ACCESSORIES

文件:654.22 Kbytes Page:16 Pages

etc2List of Unclassifed Manufacturers

etc2未分类制造商

etc2

TOCHANGEWITHOUTNOTICEACCESSORIES

文件:657.1 Kbytes Page:17 Pages

etc2List of Unclassifed Manufacturers

etc2未分类制造商

etc2

BFG540产品属性

  • 类型

    描述

  • 型号

    BFG540

  • 制造商

    PHILIPS

  • 制造商全称

    NXP Semiconductors

  • 功能描述

    NPN 9 GHz wideband transistor

更新时间:2024-3-29 16:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
2000
全新
PHL
17+
SOT-143
6200
100%原装正品现货
PHI
2020+
SOT-143
16800
绝对原装进口现货,假一赔十,价格优势!?
PHILIPS
22+
SOT-143
3600
绝对原装!现货热卖!
NXP
22+
SOT143
36500
只做进口原装正品假一赔十!
NXP
21+
SOT143
6900
原装正品假一赔十 实单价格可谈
NXP
21+
SOT143
60000
原厂订货价格优势,可开13%的增值税票
NXP
19+
SOT143
66051
原厂代理渠道,每一颗芯片都可追溯原厂;
PHILIPS/飞利浦
2021+
Sot-143
500
PHILIPS
21+
SOT23-4
33146
原装现货假一赔十

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