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BFG540晶体管资料
BFG540别名:BFG540三极管、BFG540晶体管、BFG540晶体三极管
BFG540生产厂家:
BFG540制作材料:Si-NPN
BFG540性质:表面帖装型 (SMD)_超高频/特高频 (UHF)
BFG540封装形式:贴片封装
BFG540极限工作电压:20V
BFG540最大电流允许值:0.12A
BFG540最大工作频率:9GHZ
BFG540引脚数:3
BFG540最大耗散功率:
BFG540放大倍数:
BFG540图片代号:H-17
BFG540vtest:20
BFG540htest:9000000000
- BFG540atest:.12
BFG540wtest:0
BFG540代换 BFG540用什么型号代替:
BFG540价格
参考价格:¥0.4500
型号:BFG540 品牌:NXP 备注:这里有BFG540多少钱,2024年最近7天走势,今日出价,今日竞价,BFG540批发/采购报价,BFG540行情走势销售排行榜,BFG540报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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BFG540 | NPN9GHzwidebandtransistor DESCRIPTION NPNsiliconplanarepitaxialtransistors,intendedforwidebandapplicationsintheGHzrange,suchasanaloganddigitalcellulartelephones,cordlesstelephones(CT1,CT2,DECT,etc.),radardetectors,satelliteTVtuners(SATV),MATV/CATVamplifiersandrepeateramplifiersinfibre | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | ||
BFG540 | NPN9GHzwidebandtransistor DESCRIPTION NPNsiliconplanarepitaxialtransistors,intendedforwidebandapplicationsintheGHzrange,suchasanaloganddigitalcellulartelephones,cordlesstelephones(CT1,CT2,DECT,etc.),radardetectors,satelliteTVtuners(SATV),MATV/CATVamplifiersandrepeateramplifiersinfibre | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | ||
BFG540 | NPNSILICONRFTRANSISTOR Feature Highgain:︱S21e︱2TYP.Valueis13dB@VCE=8V,IC=40mA,f=0.9GHz Lownoise:NFTYP.Valueis1.8dB@VCE=10V,IC=10mA,f=0.9GHz fT(TYP.):TYP.Valueis9GHz@VCE=8V,IC=40mA,f=1GHz | SKTECHNOLGYSHIKE Electronics 時科广东時科微实业有限公司 | ||
BFG540 | RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | ||
BFG540 | iscSiliconNPNRFTransistor DESCRIPTION •LowNoiseFigure NF=1.3dBTYP.@VCE=8V,IC=10mA,f=900MHz •HighGain ︱S21︱2=16dBTYP.@VCE=8V,IC=40mA,f=900MHz •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •Designedforuseinlownoise,h | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ||
BFG540 | NPN9GHzWidebandTransistor ■Features ●Highpowergain ●Lownoisefigure ●Hightransitionfrequency ●Goldmetallizationensuresexcellentreliability. | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | ||
BFG540 | iscSiliconNPNRFTransistor 文件:245.37 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ||
BFG540 | iscSiliconNPNRFTransistor 文件:343.31 Kbytes Page:3 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ||
NPN9GHzwidebandtransistors DESCRIPTION NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT143Bplasticpackage. FEATURES •Highpowergain •Lownoisefigure •Hightransitionfrequency •Goldmetallizationensuresexcellentreliability. APPLICATIONS RFfrontendapplicationsintheGHzrange, | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
NPN9GHzwidebandtransistors DESCRIPTION NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Nplasticpackage. FEATURES •Highpowergain •Lownoisefigure •Hightransitionfrequency •Goldmetallizationensuresexcellentreliability. APPLICATIONS RFfrontendapplicationsintheGHzrange,su | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
NPN9GHzwidebandtransistors DESCRIPTION NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT143Bplasticpackage. FEATURES •Highpowergain •Lownoisefigure •Hightransitionfrequency •Goldmetallizationensuresexcellentreliability. APPLICATIONS RFfrontendapplicationsintheGHzrange,su | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
NPN9GHzwidebandtransistor DESCRIPTION NPNsiliconplanarepitaxialtransistors,intendedforwidebandapplicationsintheGHzrange,suchasanaloganddigitalcellulartelephones,cordlesstelephones(CT1,CT2,DECT,etc.),radardetectors,satelliteTVtuners(SATV),MATV/CATVamplifiersandrepeateramplifiersinfibre | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
NPN9GHzwidebandtransistor DESCRIPTION NPNsiliconplanarepitaxialtransistors,intendedforwidebandapplicationsintheGHzrange,suchasanaloganddigitalcellulartelephones,cordlesstelephones(CT1,CT2,DECT,etc.),radardetectors,satelliteTVtuners(SATV),MATV/CATVamplifiersandrepeateramplifiersinfibre | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
NPN9GHzwidebandtransistors DESCRIPTION NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Nplasticpackage. FEATURES •Highpowergain •Lownoisefigure •Hightransitionfrequency •Goldmetallizationensuresexcellentreliability. APPLICATIONS RFfrontendapplicationsintheGHzrange,su | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
NPN9GHzwidebandtransistor DESCRIPTION NPNsiliconplanarepitaxialtransistors,intendedforwidebandapplicationsintheGHzrange,suchasanaloganddigitalcellulartelephones,cordlesstelephones(CT1,CT2,DECT,etc.),radardetectors,satelliteTVtuners(SATV),MATV/CATVamplifiersandrepeateramplifiersinfibre | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
NPN9GHzwidebandtransistors DESCRIPTION NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT143Bplasticpackage. FEATURES •Highpowergain •Lownoisefigure •Hightransitionfrequency •Goldmetallizationensuresexcellentreliability. APPLICATIONS RFfrontendapplicationsintheGHzrange,su | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
NPN9GHzwidebandtransistors DESCRIPTION NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT143Bplasticpackage. FEATURES •Highpowergain •Lownoisefigure •Hightransitionfrequency •Goldmetallizationensuresexcellentreliability. APPLICATIONS RFfrontendapplicationsintheGHzrange, | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
NPN9GHzwidebandtransistor DESCRIPTION NPNsiliconplanarepitaxialtransistorsinplastic,4-pindual-emitterSOT343NandSOT343Rpackages. FEATURES •Highpowergain •Lownoisefigure •Hightransitionfrequency •Goldmetallizationensuresexcellentreliability. APPLICATIONS Theyareintend | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
NPN9GHzwidebandtransistor DESCRIPTION NPNsiliconplanarepitaxialtransistors,intendedforwidebandapplicationsintheGHzrange,suchasanaloganddigitalcellulartelephones,cordlesstelephones(CT1,CT2,DECT,etc.),radardetectors,satelliteTVtuners(SATV),MATV/CATVamplifiersandrepeateramplifiersinfibre | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
NPN9GHzwidebandtransistor DESCRIPTION NPNsiliconplanarepitaxialtransistorsinplastic,4-pindual-emitterSOT343NandSOT343Rpackages. FEATURES •Highpowergain •Lownoisefigure •Hightransitionfrequency •Goldmetallizationensuresexcellentreliability. APPLICATIONS Theyareintend | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
NPN9GHzwidebandtransistor DESCRIPTION NPNsiliconplanarepitaxialtransistors,intendedforwidebandapplicationsintheGHzrange,suchasanaloganddigitalcellulartelephones,cordlesstelephones(CT1,CT2,DECT,etc.),radardetectors,satelliteTVtuners(SATV),MATV/CATVamplifiersandrepeateramplifiersinfibre | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
NPN9GHzwidebandtransistor DESCRIPTION NPNsiliconplanarepitaxialtransistorsinplastic,4-pindual-emitterSOT343NandSOT343Rpackages. FEATURES •Highpowergain •Lownoisefigure •Hightransitionfrequency •Goldmetallizationensuresexcellentreliability. APPLICATIONS Theyareintend | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
NPN9GHzwidebandtransistor DESCRIPTION NPNsiliconplanarepitaxialtransistors,intendedforwidebandapplicationsintheGHzrange,suchasanaloganddigitalcellulartelephones,cordlesstelephones(CT1,CT2,DECT,etc.),radardetectors,satelliteTVtuners(SATV),MATV/CATVamplifiersandrepeateramplifiersinfibre | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
NPNSILICONRFTRANSISTOR Feature Highgain:︱S21e︱2TYP.Valueis13dB@VCE=8V,IC=40mA,f=0.9GHz Lownoise:NFTYP.Valueis1.8dB@VCE=10V,IC=10mA,f=0.9GHz fT(TYP.):TYP.Valueis9GHz@VCE=8V,IC=40mA,f=1GHz | SKTECHNOLGYSHIKE Electronics 時科广东時科微实业有限公司 | |||
NPNSILICONRFTRANSISTOR Feature Highgain:︱S21e︱2TYP.Valueis13dB@VCE=8V,IC=40mA,f=0.9GHz Lownoise:NFTYP.Valueis1.8dB@VCE=10V,IC=10mA,f=0.9GHz fT(TYP.):TYP.Valueis9GHz@VCE=8V,IC=40mA,f=1GHz | SKTECHNOLGYSHIKE Electronics 時科广东時科微实业有限公司 | |||
RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
封装/外壳:TO-253-4,TO-253AA 包装:卷带(TR) 描述:RF TRANS NPN 15V 9GHZ SOT143B 分立半导体产品 晶体管 - 双极(BJT)- 射频 | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
封装/外壳:SOT-143R 包装:卷带(TR) 描述:RF TRANS NPN 15V 9GHZ SOT143R 分立半导体产品 晶体管 - 双极(BJT)- 射频 | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
NPN9GHzwidebandtransistor 文件:138.25 Kbytes Page:16 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | |||
iscSiliconNPNRFTransistor 文件:343.31 Kbytes Page:3 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
iscSiliconNPNRFTransistor 文件:245.37 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
NPN9GHzwidebandtransistor 文件:138.25 Kbytes Page:16 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | |||
NPN9GHzwidebandtransistor 文件:136.6 Kbytes Page:16 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | |||
NPN9GHzwidebandtransistor 文件:136.6 Kbytes Page:16 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | |||
iscSiliconNPNRFTransistor 文件:343.31 Kbytes Page:3 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
Pentium4ProcessorsSupportingHyper-ThreadingTechnology Introduction TheIntel®Pentium®4processoron90nmprocessinthe775-landpackageisafollowontothePentium4processorinthe478-pinpackagewithenhancementstotheIntelNetBurst®microarchitecture.ThePentium4processoron90nmprocessinthe775-landpackageusesFlipChipLandGr | IntelIntel Corporation(Integrated Electronics Corporation) 英特尔英特尔(集成电子公司) | |||
5MMLED 文件:116 Kbytes Page:5 Pages | HBHB Electronic Components HB Electronic Components | |||
SILICONRECTIFIER 文件:118.76 Kbytes Page:3 Pages | POWEREX POWEREX | |||
MISCELLANEOUSHARDWARE-ACCESSORIES 文件:654.22 Kbytes Page:16 Pages | etc2List of Unclassifed Manufacturers etc2未分类制造商 | |||
TOCHANGEWITHOUTNOTICEACCESSORIES 文件:657.1 Kbytes Page:17 Pages | etc2List of Unclassifed Manufacturers etc2未分类制造商 |
BFG540产品属性
- 类型
描述
- 型号
BFG540
- 制造商
PHILIPS
- 制造商全称
NXP Semiconductors
- 功能描述
NPN 9 GHz wideband transistor
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
2000 |
全新 |
||||||
PHL |
17+ |
SOT-143 |
6200 |
100%原装正品现货 |
|||
PHI |
2020+ |
SOT-143 |
16800 |
绝对原装进口现货,假一赔十,价格优势!? |
|||
PHILIPS |
22+ |
SOT-143 |
3600 |
绝对原装!现货热卖! |
|||
NXP |
22+ |
SOT143 |
36500 |
只做进口原装正品假一赔十! |
|||
NXP |
21+ |
SOT143 |
6900 |
原装正品假一赔十 实单价格可谈 |
|||
NXP |
21+ |
SOT143 |
60000 |
原厂订货价格优势,可开13%的增值税票 |
|||
NXP |
19+ |
SOT143 |
66051 |
原厂代理渠道,每一颗芯片都可追溯原厂; |
|||
PHILIPS/飞利浦 |
2021+ |
Sot-143 |
500 |
||||
PHILIPS |
21+ |
SOT23-4 |
33146 |
原装现货假一赔十 |
BFG540规格书下载地址
BFG540参数引脚图相关
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- c901
- C80
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- c3055
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- c2073
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- c2000
- c188
- c1209
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- bul128a
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- bu406
- bq5
- biss0001
- bga
- BFL18
- BFG97
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- BFG93AX
- BFG93A
- BFG93(A)XR
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- BFG741
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- BFG67W
- BFG67R
- BFG67/X
- BFG67
- BFG65(T)
- BFG65
- BFG591
- BFG590W
- BFG590
- BFG55
- BFG541
- BFG540XR
- BFG540X
- BFG540W
- BFG54
- BFG520XR
- BFG520X
- BFG520W
- BFG520
- BFG51
- BFG505XR
- BFG505X
- BFG505W
- BFG505
- BFG480W
- BFG480
- BFG425W
- BFG424W
- BFG424F
- BFG410W
- BFG410
- BFG403W
- BFG35
- BFG34
- BFG33X
- BFG33A
- BFG33
- BFG325W
- BFG325
- BFG32
- BFG310W
- BFG310
- BFG31
- BFG25X
- BFG25(A,X)
- BFG235
- BFG23
- BFG19S(A)
- BFG19S
BFG540数据表相关新闻
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2019-11-30
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