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BFG晶体管资料

  • BFG134别名：BFG134三极管、BFG134晶体管、BFG134晶体三极管

  • BFG134生产厂家：荷兰飞利浦公司

  • BFG134制作材料：Si-NPN

  • BFG134性质：超高频/特高频 （UHF）_微波 （MW）

  • BFG134封装形式：贴片封装

  • BFG134极限工作电压：25V

  • BFG134最大电流允许值：0.15A

  • BFG134最大工作频率：7.5GHZ

  • BFG134引脚数：4

  • BFG134最大耗散功率：1W

  • BFG134放大倍数：

  • BFG134图片代号：G-129

  • BFG134vtest：25

  • BFG134htest：7500000000

  • BFG134atest：.15

  • BFG134wtest：1

  • BFG134代换 BFG134用什么型号代替：

BFG价格

参考价格：￥68.1808

型号：BFG.00.100.PCSG 品牌：LEMO 备注：这里有BFG多少钱，2024年最近7天走势，今日出价，今日竞价，BFG批发/采购报价，BFG行情走势销售排行榜，BFG报价。
型号 功能描述 生产厂家&企业 LOGO 操作
BFG10

NPN 2 GHz RF power transistor

DESCRIPTION NPNsiliconplanarepitaxialtransistorencapsulatedinplastic,4-pindual-emitterSOT143package. FEATURES •Highpowergain •Highefficiency •Smallsizediscretepoweramplifier •1.9GHzoperatingarea •Goldmetallizationensuresexcellentreliability. APPLICATIONS •Co

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BFG10

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BFG10

NPN 2 GHz RF power transistor

DESCRIPTION NPNsiliconplanarepitaxialtransistorencapsulatedinplastic,4-pindual-emitterSOT143package. FEATURES •Highpowergain •Highefficiency •Smallsizediscretepoweramplifier •1.9GHzoperatingarea •Goldmetallizationensuresexcellentreliability. APPLICATIONS •Co

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BFG10/X

NPN 2 GHz RF power transistor

DESCRIPTION NPNsiliconplanarepitaxialtransistorencapsulatedinplastic,4-pindual-emitterSOT143package. FEATURES •Highpowergain •Highefficiency •Smallsizediscretepoweramplifier •1.9GHzoperatingarea •Goldmetallizationensuresexcellentreliability. APPLICATIONS •Co

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BFG10/X

NPN 2 GHz RF power transistor

DESCRIPTION NPNsiliconplanarepitaxialtransistorencapsulatedinplastic,4-pindual-emitterSOT143package. FEATURES •Highpowergain •Highefficiency •Smallsizediscretepoweramplifier •1.9GHzoperatingarea •Goldmetallizationensuresexcellentreliability. APPLICATIONS •Co

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BFG10/X

UHF power transistor

DESCRIPTION NPNsiliconplanarepitaxialtransistorencapsulatedinaplastic,4-pindual-emitterSOT343package. FEATURES •Highefficiency •Smallsizediscretepoweramplifier •900MHzand1.9GHzoperatingareas •Goldmetallizationensuresexcellentreliability. APPLICATIONS •Common

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BFG10/X

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BFG10W

UHF power transistor

DESCRIPTION NPNsiliconplanarepitaxialtransistorencapsulatedinaplastic,4-pindual-emitterSOT343package. FEATURES •Highefficiency •Smallsizediscretepoweramplifier •900MHzand1.9GHzoperatingareas •Goldmetallizationensuresexcellentreliability. APPLICATIONS •Common

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BFG10W

UHF power transistor

FEATURES Highefficiency Smallsizediscretepoweramplifier 900MHzand1.9GHzoperating areas Goldmetallizationensures excellentreliability. APPLICATIONS Commonemitterclass-AB operationinhand-heldradio equipmentupto1.9GHz. DESCRIPTION NPNsiliconplanarepi

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BFG10W/X

UHF power transistor

DESCRIPTION NPNsiliconplanarepitaxialtransistorencapsulatedinaplastic,4-pindual-emitterSOT343package. FEATURES •Highefficiency •Smallsizediscretepoweramplifier •900MHzand1.9GHzoperatingareas •Goldmetallizationensuresexcellentreliability. APPLICATIONS •Common

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BFG10W/X

UHF power transistor

FEATURES Highefficiency Smallsizediscretepoweramplifier 900MHzand1.9GHzoperating areas Goldmetallizationensures excellentreliability. APPLICATIONS Commonemitterclass-AB operationinhand-heldradio equipmentupto1.9GHz. DESCRIPTION NPNsiliconplanarepi

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BFG10W-X

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BFG10X

UHF power transistor

DESCRIPTION NPNsiliconplanarepitaxialtransistorencapsulatedinaplastic,4-pindual-emitterSOT343package. FEATURES •Highefficiency •Smallsizediscretepoweramplifier •900MHzand1.9GHzoperatingareas •Goldmetallizationensuresexcellentreliability. APPLICATIONS •Common

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BFG10-X

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BFG11

NPN 2 GHz RF power transistor

DESCRIPTION NPNsiliconplanarepitaxialtransistorsencapsulatedinaplastic,4-pindual-emitterSOT143package. FEATURES •Highpowergain •Highefficiency •Smallsizediscretepoweramplifier •1.9GHzoperatingarea •Goldmetallizationensuresexcellentreliability. APPLICATIONS •

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BFG11/X

NPN 2 GHz RF power transistor

DESCRIPTION NPNsiliconplanarepitaxialtransistorsencapsulatedinaplastic,4-pindual-emitterSOT143package. FEATURES •Highpowergain •Highefficiency •Smallsizediscretepoweramplifier •1.9GHzoperatingarea •Goldmetallizationensuresexcellentreliability. APPLICATIONS •

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BFG11W

NPN 2 GHz power transistor

DESCRIPTION NPNsiliconplanarepitaxialtransistorencapsulatedinaplastic4-pindual-emitterSOT343package. FEATURES •Highpowergain •Highefficiency •Smallsizediscretepoweramplifier •1.9GHzoperatingarea •Goldmetallizationensuresexcellentreliability •Linearandnon-l

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BFG11W/X

NPN 2 GHz power transistor

DESCRIPTION NPNsiliconplanarepitaxialtransistorencapsulatedinaplastic4-pindual-emitterSOT343package. FEATURES •Highpowergain •Highefficiency •Smallsizediscretepoweramplifier •1.9GHzoperatingarea •Goldmetallizationensuresexcellentreliability •Linearandnon-l

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BFG135

NPN 7GHz wideband transistor

DESCRIPTION NPNsiliconplanarepitaxialtransistorinaplasticSOT223envelope,intendedforwidebandamplifierapplications.Thesmallemitterstructures,withintegratedemitter-ballastingresistors,ensurehighoutputvoltagecapabilitiesatalowdistortionlevel. Thedistributionoft

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BFG135

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BFG135A

NPN Silicon RF Transistor (For low-distortion broadband output amplifier stages in antenna and telecommunications)

NPNSiliconRFTransistor •Forlow-distortionbroadbandamplifier stagesinantennaandtelecommunication systemsupto2GHzatcollectorcurrentsfrom 70mAto130mA •PoweramplifiersforDECTandPCNsystems •Integratedemitterballastresistor •fT=6GHz

SIEMENS

Siemens Ltd

SIEMENS
BFG135A

NPN Silicon RF Transistor

NPNSiliconRFTransistor •Forlow-distortionbroadbandamplifier stagesinantennaandtelecommunication systemsupto2GHzatcollectorcurrentsfrom 70mAto130mA •PoweramplifiersforDECTandPCNsystems •Integratedemitterballastresistor •fT=6GHz

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
BFG16

NPN 2 GHz wideband transistor

DESCRIPTION NPNtransistormountedinaplasticSOT223envelope. Itisprimarilyintendedforuseinwidebandamplifiers,aerialamplifiersandverticalamplifiersinhighspeedoscilloscopes. FEATURES •Highpowergain •Goodthermalstability •Goldmetallizationensuresexcellentreliabil

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BFG16A

NPN 2 GHz wideband transistor

DESCRIPTION NPNtransistormountedinaplasticSOT223envelope. Itisprimarilyintendedforuseinwidebandamplifiers,aerialamplifiersandverticalamplifiersinhighspeedoscilloscopes. FEATURES •Highpowergain •Goodthermalstability •Goldmetallizationensuresexcellentreliabil

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BFG17

NPN 3 GHz wideband transistor

DESCRIPTION NPNwidebandtransistorinamicrominiatureplasticSOT143surfacemountingenvelopewithdoubleemitterbonding. ItisintendedforuseinwidebandaerialamplifiersusingSMDtechnology.

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BFG17A

NPN 3 GHz wideband transistor

DESCRIPTION NPNwidebandtransistorinamicrominiatureplasticSOT143surfacemountingenvelopewithdoubleemitterbonding. ItisintendedforuseinwidebandaerialamplifiersusingSMDtechnology.

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BFG19

NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna)

•Forlownoise,lowdistortionbroadbandamplifiersinantennaandtelecommunicationssystemsupto1.5GHzatcollectorcurrentsfrom10mAto70mA •CECC-typeavailable:CECC50002/259

SIEMENS

Siemens Ltd

SIEMENS
BFG19

NPN Silicon RF Transistor

NPNSiliconRFTransistor •Forlownoise,lowdistortionbroadband amplifiersinantennaand telecommunicationsystemsupto1.5GHz atcollectorcurrentsfrom10mAto70mA

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
BFG193

NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers)

NPNSiliconRFTransistor •Forlownoise,high-gainamplifiersupto2GHz •Forlinearbroadbandamplifiers •fT=8GHz F=1.3dBat900MHz

SIEMENS

Siemens Ltd

SIEMENS
BFG193

NPN Silicon RF Transistor

NPNSiliconRFTransistor •Forlownoise,high-gainamplifiersupto2GHz •Forlinearbroadbandamplifiers •fT=8GHz F=1.3dBat900MHz

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
BFG193

Silicon NPN RF Transistor

DESCRIPTION •LowNoiseFigure NF=1.3dBTYP.@VCE=8V,IC=10mA,f=900MHz •HighGain ︱S21e︱2=13.5dBTYP.@VCE=8V,IC=30mA,f=900MHz APPLICATIONS •Designedforuseinlownoise,high-gainamplifiersand linearbroadbandamplifiers.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
BFG193

Low Noise Figure

DESCRIPTION •LowNoiseFigure NF=1.3dBTYP.@VCE=8V,IC=10mA,f=900MHz •HighGain ︱S21e︱2=13.5dBTYP.@VCE=8V,IC=30mA,f=900MHz APPLICATIONS •Designedforuseinlownoise,high-gainamplifiersand linearbroadbandamplifiers.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
BFG194

PNP Silicon RF Transistor (For low distortion broadband amplifiers in antenna and telecommunications)

•Forlowdistortionbroadbandamplifiersinantennaandtelecommunicationssystemsupto1.5GHzatcollectorcurrentsfrom20mAto80mA

SIEMENS

Siemens Ltd

SIEMENS
BFG196

NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna and telecommunications)

NPNSiliconRFTransistor •Forlownoise,lowdistortionbroadbandamplifiersinantennaandtelecommunicationssystemsupto1.5GHzatcollectorcurrentsfrom20mAto80mA •PoweramplifierforDECTandPCNsystems •fT=7.5GHz F=1.5dBat900MHz

SIEMENS

Siemens Ltd

SIEMENS
BFG196

NPN Silicon RF Transistor

NPNSiliconRFTransistor •Forlownoise,lowdistortionbroadbandamplifiersinantennaandtelecommunicationsystemsupto1.5GHzatcollectorcurrentsfrom20mAto80mA •PoweramplifierforDECTandPCNSystems •fT=7.5GHz F=1.5dBat900GHz

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
BFG197

NPN 7 GHz wideband transistor

DESCRIPTION TheBFG197isasiliconNPNtransistorina4-pin,dual-emitterplasticSOT143envelope.ItisprimarilyintendedforwidebandapplicationsintheGHzrange,suchassatelliteTVsystemsandrepeateramplifiersinfibre-opticsystems. FEATURES •Highpowergain •Lownois

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BFG197/X

NPN 7 GHz wideband transistor

DESCRIPTION TheBFG197isasiliconNPNtransistorina4-pin,dual-emitterplasticSOT143envelope.ItisprimarilyintendedforwidebandapplicationsintheGHzrange,suchassatelliteTVsystemsandrepeateramplifiersinfibre-opticsystems. FEATURES •Highpowergain •Lownois

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BFG197/XR

NPN 7 GHz wideband transistor

DESCRIPTION TheBFG197isasiliconNPNtransistorina4-pin,dual-emitterplasticSOT143envelope.ItisprimarilyintendedforwidebandapplicationsintheGHzrange,suchassatelliteTVsystemsandrepeateramplifiersinfibre-opticsystems. FEATURES •Highpowergain •Lownois

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BFG198

NPN 8 GHz wideband transistor

DESCRIPTION NPNplanarepitaxialtransistorinaplasticSOT223envelope,intendedforwidebandamplifierapplications. Thedevicefeaturesahighgainandexcellentoutputvoltagecapabilities.

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BFG198

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BFG19S

NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna)

•Forlownoise,lowdistortionbroadbandamplifiersinantennaandtelecommunicationssystemsupto1.5GHzatcollectorcurrentsfrom10mAto70mA •CECC-typeavailable:CECC50002/259

SIEMENS

Siemens Ltd

SIEMENS
BFG19S

NPN Silicon RF Transistor

NPNSiliconRFTransistor •Forlownoise,lowdistortionbroadband amplifiersinantennaand telecommunicationsystemsupto1.5GHz atcollectorcurrentsfrom10mAto70mA

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
BFG21W

UHF power transistor

DESCRIPTION NPNdoublepolysiliconbipolarpowertransistorwithburiedlayerforlowvoltagemediumpowerapplicationsencapsulatedinaplastic,4-pindual-emitterSOT343Rpackage. FEATURES •Highpowergain •Highefficiency •1.9GHzoperatingarea •Linearandnon-linearoperation. APP

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BFG21W

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BFG235

NPN Silicon RF Transistor (For low-distortion broadband output amplifier stages in antenna and telecommunications)

NPNSiliconRFTransistor •Forlow-distortionbroadbandoutputamplifier stagesinantennaandtelecommunications systemsupto2GHzatcollectorcurrentsfrom 120mAto250mA •PoweramplifiersforDECTandPCNsystems •Integratedemitterballastresistor •fT=5.5GHz

SIEMENS

Siemens Ltd

SIEMENS
BFG235

NPN Silicon RF Transistor

NPNSiliconRFTransistor ●Forlow-distortionbroadbandoutputamplifier stagesinantennaandtelecommunication systemsupto2GHzatcollectorcurrentsfrom 120mAto250mA ●PoweramplifiersforDECTandPCNsystems ●Integratedemitterballastresistor ●fT=5.5GHz

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
BFG25A

NPN 5 GHz wideband transistor

DESCRIPTION NPNsiliconwidebandtransistorinafour-leaddualemitterSOT143Bplasticpackage(crossemitter). FEATURES •Lowcurrentconsumption(100µAto1mA) •Lownoisefigure •Goldmetallizationensuresexcellentreliability. APPLICATIONS •RFlowpoweramplifiers,suchaspocket

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BFG25A

NPN 5 GHz wideband transistor

DESCRIPTION NPNsiliconwidebandtransistorinafour-leaddualemitterSOT143Bplasticpackage(crossemitter). FEATURES •Lowcurrentconsumption(100µAto1mA) •Lownoisefigure •Goldmetallizationensuresexcellentreliability. APPLICATIONS •RFlowpoweramplifiers,suchaspocket

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BFG25A/X

NPN 5 GHz wideband transistor

DESCRIPTION NPNsiliconwidebandtransistorinafour-leaddualemitterSOT143Bplasticpackage(crossemitter). FEATURES •Lowcurrentconsumption(100µAto1mA) •Lownoisefigure •Goldmetallizationensuresexcellentreliability. APPLICATIONS •RFlowpoweramplifiers,suchaspocket

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BFG25A/X

NPN 5 GHz wideband transistor

DESCRIPTION NPNsiliconwidebandtransistorinafour-leaddualemitterSOT143Bplasticpackage(crossemitter). FEATURES •Lowcurrentconsumption(100µAto1mA) •Lownoisefigure •Goldmetallizationensuresexcellentreliability. APPLICATIONS •RFlowpoweramplifiers,suchaspocket

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BFG25A/X

NPN 5 GHz wideband transistor

FEATURES ·Lowcurrentconsumption (100mAto1mA) ·Lownoisefigure ·Goldmetallizationensures excellentreliability. APPLICATIONS ·RFlowpoweramplifiers,suchas pockettelephones,paging systems,withsignalfrequencies upto2GHz. DESCRIPTION NPNsiliconwidebandtransi

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BFG25A_V01

NPN 5 GHz wideband transistor

FEATURES ·Lowcurrentconsumption (100mAto1mA) ·Lownoisefigure ·Goldmetallizationensures excellentreliability. APPLICATIONS ·RFlowpoweramplifiers,suchas pockettelephones,paging systems,withsignalfrequencies upto2GHz. DESCRIPTION NPNsiliconwidebandtransi

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BFG25AW

NPN 5 GHz wideband transistors

DESCRIPTION NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Nplasticpackage. FEATURES •Lowcurrentconsumption(100µAto1mA) •Lownoisefigure •Goldmetallizationensuresexcellentreliability. APPLICATIONS WidebandapplicationsinUHFlowpoweramplifiers,

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BFG25AW

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BFG25AW/X

NPN 5 GHz wideband transistors

DESCRIPTION NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Nplasticpackage. FEATURES •Lowcurrentconsumption(100µAto1mA) •Lownoisefigure •Goldmetallizationensuresexcellentreliability. APPLICATIONS WidebandapplicationsinUHFlowpoweramplifiers,

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BFG25AW-X

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BFG25AX

NPN 5 GHz wideband transistor

DESCRIPTION NPNsiliconwidebandtransistorinafour-leaddualemitterSOT143Bplasticpackage(crossemitter). FEATURES •Lowcurrentconsumption(100µAto1mA) •Lownoisefigure •Goldmetallizationensuresexcellentreliability. APPLICATIONS •RFlowpoweramplifiers,suchaspocket

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BFG25A-X

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BFG25X

NPN 5 GHz wideband transistor

DESCRIPTION NPNsiliconwidebandtransistorinafour-leaddualemitterSOT143Bplasticpackage(crossemitter). FEATURES •Lowcurrentconsumption(100µAto1mA) •Lownoisefigure •Goldmetallizationensuresexcellentreliability. APPLICATIONS •RFlowpoweramplifiers,suchaspocket

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BFG31

PNP 5 GHz wideband transistor

DESCRIPTION PNPplanarepitaxialtransistormountedinaplasticSOT223envelope. Itisintendedforwidebandamplifierapplications. NPNcomplementistheBFG97. FEATURES •Highoutputvoltagecapability •Highgainbandwidthproduct •Goodthermalstability •Goldmetallizationensures

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

BFG产品属性

  • 类型

    描述

  • 型号

    BFG

  • 功能描述

    两极晶体管 - BJT NPN Silicon RF Trans DISCONTINUED

  • RoHS

    否

  • 制造商

    STMicroelectronics

  • 晶体管极性

    PNP 集电极—基极电压

  • VCBO

    集电极—发射极最大电压

  • VCEO

    - 40 V 发射极 - 基极电压

  • VEBO

    - 6 V

  • 增益带宽产品fT

    直流集电极/Base Gain hfe

  • Min

    100 A

  • 安装风格

    SMD/SMT

  • 封装/箱体

    PowerFLAT 2 x 2

BFG供应商更多...

更新时间：2024-6-4 16:45:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市近平电子有限公司
BFG10/X
NXP
3000
19+
8000
SOT143
询价
深圳市维尔达电子有限公司
BFG10
PHI
2023+
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
深圳市一线半导体有限公司
BFG10
NXP恩智浦/PHILIPS飞利浦
2008++
SOT-143SOT-23-4
18200
新进库存/原装
询价
深圳市艾宇特电子科技有限公司
BFG10/X
PHILIPS/飞利浦
2048+
SOT-143
9852
只做原装正品现货!或订货假一赔十!
询价
深圳市振宏微科技有限公司
BFG10
SOT-143
23+
NA
15659
振宏微专业只做正品,假一罚百!
询价
深圳市科芯源微电子有限公司
BFG10/X
NXP/恩智浦
23+
SOT-143
100586
全新原厂原装正品现货,可提供技术支持、样品免费!
询价
深圳市汇莱威科技有限公司
BFG10W/X
NXP/恩智浦
SOT343
7906200
询价
深圳市得捷芯城科技有限公司
BFG10
NXP/恩智浦
23+
NA/
3750
原装现货,当天可交货,原型号开票
询价
深圳市华来深电子有限公司
BFG10
PHILIPS
23+
SOT-143
8650
受权代理!全新原装现货特价热卖!
询价
深圳市金华微盛电子有限公司
BFG10W/X
NXP/恩智浦
2019+
SOT343
36000
原盒原包装 可BOM配套
询价

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