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BFG19晶体管资料
BFG193别名:BFG193三极管、BFG193晶体管、BFG193晶体三极管
BFG193生产厂家:德国西门子AG公司
BFG193制作材料:Si-NPN
BFG193性质:超高频/特高频 (UHF)_宽频带放大 (A)
BFG193封装形式:贴片封装
BFG193极限工作电压:20V
BFG193最大电流允许值:0.08A
BFG193最大工作频率:8GHZ
BFG193引脚数:3
BFG193最大耗散功率:
BFG193放大倍数:
BFG193图片代号:H-99
BFG193vtest:20
BFG193htest:8000000000
- BFG193atest:.08
BFG193wtest:0
BFG193代换 BFG193用什么型号代替:
BFG19价格
参考价格:¥2.7000
型号:BFG198 品牌:NXP 备注:这里有BFG19多少钱,2024年最近7天走势,今日出价,今日竞价,BFG19批发/采购报价,BFG19行情走势销售排行榜,BFG19报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
BFG19 | NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna) •Forlownoise,lowdistortionbroadbandamplifiersinantennaandtelecommunicationssystemsupto1.5GHzatcollectorcurrentsfrom10mAto70mA •CECC-typeavailable:CECC50002/259 | SIEMENS Siemens Ltd | ||
BFG19 | NPN Silicon RF Transistor NPNSiliconRFTransistor •Forlownoise,lowdistortionbroadband amplifiersinantennaand telecommunicationsystemsupto1.5GHz atcollectorcurrentsfrom10mAto70mA | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | ||
NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers) NPNSiliconRFTransistor •Forlownoise,high-gainamplifiersupto2GHz •Forlinearbroadbandamplifiers •fT=8GHz F=1.3dBat900MHz | SIEMENS Siemens Ltd | |||
NPN Silicon RF Transistor NPNSiliconRFTransistor •Forlownoise,high-gainamplifiersupto2GHz •Forlinearbroadbandamplifiers •fT=8GHz F=1.3dBat900MHz | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
Silicon NPN RF Transistor DESCRIPTION •LowNoiseFigure NF=1.3dBTYP.@VCE=8V,IC=10mA,f=900MHz •HighGain ︱S21e︱2=13.5dBTYP.@VCE=8V,IC=30mA,f=900MHz APPLICATIONS •Designedforuseinlownoise,high-gainamplifiersand linearbroadbandamplifiers. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
Low Noise Figure DESCRIPTION •LowNoiseFigure NF=1.3dBTYP.@VCE=8V,IC=10mA,f=900MHz •HighGain ︱S21e︱2=13.5dBTYP.@VCE=8V,IC=30mA,f=900MHz APPLICATIONS •Designedforuseinlownoise,high-gainamplifiersand linearbroadbandamplifiers. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
PNP Silicon RF Transistor (For low distortion broadband amplifiers in antenna and telecommunications) •Forlowdistortionbroadbandamplifiersinantennaandtelecommunicationssystemsupto1.5GHzatcollectorcurrentsfrom20mAto80mA | SIEMENS Siemens Ltd | |||
NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna and telecommunications) NPNSiliconRFTransistor •Forlownoise,lowdistortionbroadbandamplifiersinantennaandtelecommunicationssystemsupto1.5GHzatcollectorcurrentsfrom20mAto80mA •PoweramplifierforDECTandPCNsystems •fT=7.5GHz F=1.5dBat900MHz | SIEMENS Siemens Ltd | |||
NPN Silicon RF Transistor NPNSiliconRFTransistor •Forlownoise,lowdistortionbroadbandamplifiersinantennaandtelecommunicationsystemsupto1.5GHzatcollectorcurrentsfrom20mAto80mA •PoweramplifierforDECTandPCNSystems •fT=7.5GHz F=1.5dBat900GHz | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
NPN 7 GHz wideband transistor DESCRIPTION TheBFG197isasiliconNPNtransistorina4-pin,dual-emitterplasticSOT143envelope.ItisprimarilyintendedforwidebandapplicationsintheGHzrange,suchassatelliteTVsystemsandrepeateramplifiersinfibre-opticsystems. FEATURES •Highpowergain •Lownois | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
NPN 7 GHz wideband transistor DESCRIPTION TheBFG197isasiliconNPNtransistorina4-pin,dual-emitterplasticSOT143envelope.ItisprimarilyintendedforwidebandapplicationsintheGHzrange,suchassatelliteTVsystemsandrepeateramplifiersinfibre-opticsystems. FEATURES •Highpowergain •Lownois | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
NPN 7 GHz wideband transistor DESCRIPTION TheBFG197isasiliconNPNtransistorina4-pin,dual-emitterplasticSOT143envelope.ItisprimarilyintendedforwidebandapplicationsintheGHzrange,suchassatelliteTVsystemsandrepeateramplifiersinfibre-opticsystems. FEATURES •Highpowergain •Lownois | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
NPN 8 GHz wideband transistor DESCRIPTION NPNplanarepitaxialtransistorinaplasticSOT223envelope,intendedforwidebandamplifierapplications. Thedevicefeaturesahighgainandexcellentoutputvoltagecapabilities. | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna) •Forlownoise,lowdistortionbroadbandamplifiersinantennaandtelecommunicationssystemsupto1.5GHzatcollectorcurrentsfrom10mAto70mA •CECC-typeavailable:CECC50002/259 | SIEMENS Siemens Ltd | |||
NPN Silicon RF Transistor NPNSiliconRFTransistor •Forlownoise,lowdistortionbroadband amplifiersinantennaand telecommunicationsystemsupto1.5GHz atcollectorcurrentsfrom10mAto70mA | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
NPN Silicon RF Transistor 文件:62.15 Kbytes Page:6 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
NPN Silicon RF Transistor 文件:62.15 Kbytes Page:6 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
NPN Silicon RF Transistor 文件:62.87 Kbytes Page:6 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
NPN Silicon RF Transistor 文件:62.87 Kbytes Page:6 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
封装/外壳:TO-261-4,TO-261AA 包装:卷带(TR) 描述:RF TRANS NPN 10V 8GHZ SOT223 分立半导体产品 晶体管 - 双极(BJT)- 射频 | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
NPN 8 GHz wideband transistor 文件:83.89 Kbytes Page:12 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | |||
NPN 8 GHz wideband transistor 文件:83.89 Kbytes Page:12 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | |||
NPN Silicon RF Transistor 文件:512.049 Kbytes Page:6 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
NPN Silicon RF Transistor 文件:512.049 Kbytes Page:6 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |
BFG19产品属性
- 类型
描述
- 型号
BFG19
- 制造商
INFINEON
- 制造商全称
Infineon Technologies AG
- 功能描述
NPN Silicon RF Transistor
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
PHILIPS |
2020+ |
223 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
ON |
23+ |
SOT23 |
20000 |
||||
INFINEON |
06+ |
原厂原装 |
26054 |
只做全新原装真实现货供应 |
|||
PHILIPS/飞利浦 |
22+ |
SOT223 |
100000 |
代理渠道/只做原装/可含税 |
|||
NXP/恩智浦 |
23+ |
SOT-143 |
100586 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
NXP |
2023 |
SOT-223 |
4000 |
公司原装现货/支持实单 |
|||
NXP/恩智浦 |
23+ |
SOT223 |
336 |
大批量供应优势库存热卖 |
|||
INFINEON |
2016+ |
SOT-223 |
3500 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
Infineon/Infineon Technologies |
SOT223 |
2000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
||||
PHILIPS |
2339+ |
SOT-223 |
21322 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
BFG19规格书下载地址
BFG19参数引脚图相关
- c9012
- c901
- C80
- c62f
- c430p
- c3055
- c3000
- c2073
- c20001
- c2000
- c188
- c1209
- c1008
- c1000
- bul128a
- bul128
- bu406
- bq5
- biss0001
- bga
- BFG410
- BFG403W
- BFG35
- BFG34
- BFG33X
- BFG33A
- BFG33
- BFG325W
- BFG325
- BFG32
- BFG310W
- BFG310
- BFG31
- BFG25X
- BFG25AX
- BFG25AW
- BFG25A
- BFG25(A,X)
- BFG235
- BFG23
- BFG21W
- BFG19S(A)
- BFG19S
- BFG198
- BFG197XR
- BFG197X
- BFG197
- BFG196
- BFG195
- BFG194
- BFG193
- BFG17A
- BFG17
- BFG16A
- BFG16
- BFG135A(A)
- BFG135A
- BFG135(A)
- BFG135
- BFG134
- BFG11W
- BFG11/X
- BFG11
- BFG10-X
- BFG10X
- BFG10W
- BFG10/X
- BFG10
- BFE520
- BFE505
- BFE215
- BFE214
- BFE196
- BFE193
- BFE183
- BFE182
- BFD88
- BFC63
- BFC62
- BFC61
- BFC520
- BFAP83
- BFAP80
- BFAP59
- BFAP58
- BFAP57
- BFAP15
- BF979(S)
- BF970(A)
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2020-8-5BF998,现货销售,只售原装,兴中扬电子
BF998,现货销售,只售原装,兴中扬电子
2019-11-30
DdatasheetPDF页码索引
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