位置：首页 > IC中文资料第4537页 > BCP
BCP晶体管资料
BCP别名：BCP三极管、BCP晶体管、BCP晶体三极管
BCP生产厂家：
BCP制作材料：Si-PNP
BCP性质：表面帖装型 （SMD）_低频或音频放大 （LF）
BCP封装形式：贴片封装
BCP极限工作电压：40V
BCP最大电流允许值：2A
BCP最大工作频率：100MHZ
BCP引脚数：3
BCP最大耗散功率：
BCP放大倍数：
BCP图片代号：H-100
BCPvtest：40
BCPhtest：100000000
- BCPatest：2
BCPwtest：0
BCP代换 BCP用什么型号代替：2SB1188,
BCP价格
参考价格：￥0.6167
型号：BCP51 品牌：Fairchild 备注：这里有BCP多少钱，2024年最近7天走势，今日出价，今日竞价，BCP批发/采购报价，BCP行情走势销售排行榜，BCP报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
Epitaxial Planar Transistor FEATURES TheBCP1213isdesignedforusinginpoweramplifierapplicationsorpowerswitchingapplications. | SECOS SeCoS Halbleitertechnologie GmbH |  |   | |
Planar High Performance Transistor Description TheBCP156isdesignedforgeneralpurposeswitchingandamplifierapplications. Features *3AmpContinuousCurrent *60VoltVCEO *LowSaturationVoltage | SECOS SeCoS Halbleitertechnologie GmbH | | | |
Medium Power Transistor FEATURES •-60VoltVCEO •3Ampcontinuouscurrent •Lowsaturationvoltage | SECOS SeCoS Halbleitertechnologie GmbH | | | |
NPN Epitaxial Planar Transistor DESCRIPTION TheBCP1766issuitedfortheoutputstageof0.5Waudio,voltageregulator,andrelaydriver. | SECOS SeCoS Halbleitertechnologie GmbH | | | |
NPN Epitaxial Planar Transistor DESCRIPTION TheBCP1898isdesignedforswitchingapplications. | SECOS SeCoS Halbleitertechnologie GmbH | | | |
Planar Medium Power Transistor Description TheBCP194isdesignedformediumpoweramplifierapplications. Features *1AmpContinuousCurrent *60VoltVCEO *ComplementarytoBCP195 | SECOS SeCoS Halbleitertechnologie GmbH | | | |
Medium Power Transistor Description TheBCP195isdesignedformediumpoweramplifierapplications. Features *1AmpContinuousCurrent *-60VVCEO *ComplementaryTOBCP194 | SECOS SeCoS Halbleitertechnologie GmbH | | | |
Epitaxial Planar Transistor DESCRIPTION TheBCP2098isanepitaxialplanartypeNPNsilicontransistor. FEATURES •ExcellentDCCurrentGainCharacteristics •LowSaturationVoltage,TypicallyVCE(SAT)=0.25VAtIC/IB=4A/0.1A | SECOS SeCoS Halbleitertechnologie GmbH | | | |
PNP Silicon Darlington Transistors (For general AF applications High collector current High current gain) PNPSiliconDarlingtonTransistors ●ForgeneralAFapplications ●Highcollectorcurrent ●Highcurrentgain ●Complementarytypes:BCP29/49(NPN) | SIEMENS Siemens Ltd |  | | |
PNP Silicon Darlington Transistors PNPSiliconDarlingtonTransistors ●ForgeneralAFapplications ●Highcollectorcurrent ●Highcurrentgain ●Complementarytypes:BCP29/49(NPN) | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |  | | |
Surface mount Si-Epitaxial PlanarTransistors SurfacemountSi-EpitaxialPlanarTransistors •Powerdissipation1.5W •PlasticcaseSOT-223 •Weightapprox..0.04g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtape | DiotecDIOTEC 德欧泰克 |  | | |
NPN Silicon Darlington Transistors (For general AF applications High collector current High current gain) NPNSiliconDarlingtonTransistors ●ForgeneralAFapplications ●Highcollectorcurrent ●Highcurrentgain ●Complementarytypes:BCP28/48(PNP) | SIEMENS Siemens Ltd | | | |
NPN Silicon Darlington Transistors NPNSiliconDarlingtonTransistors ●ForgeneralAFapplications ●Highcollectorcurrent ●Highcurrentgain ●Complementarytypes:BCP28/48(PNP) | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Surface mount Si-Epitaxial PlanarTransistors •Powerdissipation1.5W •PlasticcaseSOT-223 •Weightapprox.0.04g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled | DiotecDIOTEC 德欧泰克 | | | |
PNP Silicon Darlington Transistors (For general AF applications High collector current High current gain) PNPSiliconDarlingtonTransistors ●ForgeneralAFapplications ●Highcollectorcurrent ●Highcurrentgain ●Complementarytypes:BCP29/49(NPN) | SIEMENS Siemens Ltd | | | |
PNP Silicon Darlington Transistors PNPSiliconDarlingtonTransistors ●ForgeneralAFapplications ●Highcollectorcurrent ●Highcurrentgain ●Complementarytypes:BCP29/49(NPN) | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Surface mount Si-Epitaxial PlanarTransistors SurfacemountSi-EpitaxialPlanarTransistors •Powerdissipation1.5W •PlasticcaseSOT-223 •Weightapprox..0.04g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtape | DiotecDIOTEC 德欧泰克 | | | |
NPN Silicon Darlington Transistors (For general AF applications High collector current High current gain) NPNSiliconDarlingtonTransistors ●ForgeneralAFapplications ●Highcollectorcurrent ●Highcurrentgain ●Complementarytypes:BCP28/48(PNP) | SIEMENS Siemens Ltd | | | |
NPN Silicon Darlington Transistors NPNSiliconDarlingtonTransistors ●ForgeneralAFapplications ●Highcollectorcurrent ●Highcurrentgain ●Complementarytypes:BCP28/48(PNP) | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Surface mount Si-Epitaxial PlanarTransistors •Powerdissipation1.5W •PlasticcaseSOT-223 •Weightapprox.0.04g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled | DiotecDIOTEC 德欧泰克 | | | |
PNP medium power transistors DESCRIPTION PNPmediumpowertransistorinaSOT223plasticpackage.NPNcomplements:BCP54,BCP55andBCP56. FEATURES •Highcurrent(max.1A) •Lowvoltage(max.80V) •Mediumpower(max.1.3W). APPLICATIONS •Audio,telephonyandautomotiveapplications •Thickandthin-filmcircuits | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 |  | | |
PNP Silicon AF Transistors PNPSiliconAFTransistors ●ForAFdriverandoutputstages ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BCP54...BCP56(NPN) | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Surface mount Si-Epitaxial PlanarTransistors SurfaceMountGeneralPurposeSi-Epi-PlanarTransistors •Powerdissipation1.3W •PlasticcaseSOT-223 •Weightapprox.0.04g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled | DiotecDIOTEC 德欧泰克 | | | |
PNP Medium Power Transistors ■Features ●ForAFdriverandoutputstages ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage ●ComplementarytoBCP54,BCP55,BCP56 | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 |  | | |
PNP SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223 Features •BVCEO>-45V,-60V&-80V •IC=-1AHighContinuousCollectorCurrent •ICM=-2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(sat) | DIODESDiodes Incorporated 达尔科技 |  | | |
PNP Silicon AF Transistors (For AF driver and output stages High collector current) PNPSiliconAFTransistors ●ForAFdriverandoutputstages ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BCP54…BCP56(NPN) | SIEMENS Siemens Ltd | | | |
-1A , -45V PNP Plastic Encapsulate Transistor FEATURES ●ForAFdriverandoutputstages ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage | SECOS SeCoS Halbleitertechnologie GmbH | | | |
45 V, 1 A PNP medium power transistors Generaldescription PNPmediumpowertransistorseriesinSurface-MountedDevice(SMD)plasticpackages. Featuresandbenefits ■Highcurrent ■Threecurrentgainselections ■Highpowerdissipationcapability ■Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT10 | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 |  | | |
High Collector Current Features •Highcollectorcurrent •1.3Wpowerdissipation. | SKTECHNOLGYSHIKE Electronics 時科广东時科微实业有限公司 |  | | |
TRANSISTOR (PNP) FEATURES •ForAFdriverandoutputstages •Highcollectorcurrent •Lowcollector-emittersaturationvoltage •Complementarytypes:BCP54...BCP56(NPN) | WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳实业深圳市永而佳实业有限公司 |  | | |
SOT-223 Plastic-Encapsulate Transistors TRANSISTOR(PNP) FEATURES •ForAFdriverandoutputstages •Highcollectorcurrent •Lowcollector-emittersaturationvoltage •Complementarytypes:BCP54...BCP56(NPN) | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd |  | | |
Plastic-Encapsulate Transistors FEATURES •ForAFdriverandoutputstages •Highcollectorcurrent •Lowcollector-emittersaturationvoltage •Complementarytypes:BCP54...BCP56(NPN) | HOTTECHGuangdong Hottech Co. Ltd. 合科泰广东合科泰实业有限公司 |  | | |
PNP Transistors Features ●ForAFdriverandoutputstages ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage ●ComplementarytoBCP54,BCP55,BCP56 | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 |  | | |
SOT-223 Plastic-Encapsulate Transistors FEATURES ForAFdriverandoutputstages Highcollectorcurrent Lowcollector-emittersaturationvoltage Complementarytypes:BCP54...BCP56(NPN) | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | | | |
PNP SILICON PLANAR EPITAXIAL TRANSISTORS GeneralPurposeMediumPowerDCApplications ComplementaryBCP54BCP55andBCP56 | CDIL CDIL |  | | |
SOT-223 Plastic-Encapsulate Transistors FEATURES ForAFdriverandoutputstages Highcollectorcurrent Lowcollector-emittersaturationvoltage Complementarytypes:BCP54...BCP56(NPN) | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | | | |
PNP Silicon AF Transistors (For AF driver and output stages High collector current) PNPSiliconAFTransistors ●ForAFdriverandoutputstages ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BCP54…BCP56(NPN) | SIEMENS Siemens Ltd | | | |
PNP Silicon AF Transistors PNPSiliconAFTransistors ●ForAFdriverandoutputstages ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BCP54...BCP56(NPN) | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
PNP Plastic-Encapsulate Transistors Features •ForAFdriverandoutputstages •Highcollectorcurrent •Lowcollector-emittersaturationvoltage •Complementarytypes:BCP54...BCP56(NPN) •LeadFreeFinish/RohsCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammability | MCCMicro Commercial Components 美微科美微科半导体公司 |  | | |
45 V, 1 A PNP medium power transistors Featuresandbenefits Highcurrent Threecurrentgainselections Highpowerdissipationcapability Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT1061) LeadlessverysmallSMDplasticpackagewithmediumpowercapability(SOT1061) AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 |  | | |
45 V, 1 A PNP medium power transistors Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability •AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
45 V, 1 A NPN medium power transistors Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability •AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
PNP SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223 Features •BVCEO>-45V,-60V&-80V •IC=-1AHighContinuousCollectorCurrent •ICM=-2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(sat) | DIODESDiodes Incorporated 达尔科技 | | | |
PNP medium power transistors DESCRIPTION PNPmediumpowertransistorinaSOT223plasticpackage.NPNcomplements:BCP54,BCP55andBCP56. FEATURES •Highcurrent(max.1A) •Lowvoltage(max.80V) •Mediumpower(max.1.3W). APPLICATIONS •Audio,telephonyandautomotiveapplications •Thickandthin-filmcircuits | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
PNP Silicon AF Transistors (For AF driver and output stages High collector current) PNPSiliconAFTransistors ●ForAFdriverandoutputstages ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BCP54…BCP56(NPN) | SIEMENS Siemens Ltd | | | |
PNP Silicon AF Transistors PNPSiliconAFTransistors ●ForAFdriverandoutputstages ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BCP54...BCP56(NPN) | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
PNP Plastic-Encapsulate Transistors Features •ForAFdriverandoutputstages •Highcollectorcurrent •Lowcollector-emittersaturationvoltage •Complementarytypes:BCP54...BCP56(NPN) •LeadFreeFinish/RohsCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammability | MCCMicro Commercial Components 美微科美微科半导体公司 | | | |
-1A , -45V PNP Plastic Encapsulate Transistor FEATURES ●ForAFdriverandoutputstages ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage | SECOS SeCoS Halbleitertechnologie GmbH | | | |
45 V, 1 A PNP medium power transistors Featuresandbenefits Highcurrent Threecurrentgainselections Highpowerdissipationcapability Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT1061) LeadlessverysmallSMDplasticpackagewithmediumpowercapability(SOT1061) AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
PNP Silicon Epitaxial Planar Transistor Features ®HighCollectorCurrent ®LowCollector-emitterSaturationVoltage | TECHPUBLICTECH PUBLIC Electronics co LTD 台舟電子台舟電子股份有限公司 |  | | |
45 V, 1 A PNP medium power transistors Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability •AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
45 V, 1 A NPN medium power transistors Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability •AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
PNP SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223 Features •BVCEO>-45V,-60V&-80V •IC=-1AHighContinuousCollectorCurrent •ICM=-2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(sat) | DIODESDiodes Incorporated 达尔科技 | | | |
PNP SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223 Features •BVCEO>-45V,-60V&-80V •IC=-1AHighContinuousCollectorCurrent •ICM=-2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(sat) | DIODESDiodes Incorporated 达尔科技 | | | |
PNP Silicon AF Transistors (For AF driver and output stages High collector current) PNPSiliconAFTransistors ●ForAFdriverandoutputstages ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BCP54…BCP56(NPN) | SIEMENS Siemens Ltd | | | |
PNP Silicon AF Transistor (For AF driver and output stages High collector current) PNPSiliconAFTransistor •ForAFdriverandoutputstages •Highcollectorcurrent •Lowcollector-emittersaturationvoltage •Complementarytypes:BCP54M...BCP56M(NPN) | SIEMENS Siemens Ltd | | | |
PNP Silicon AF Transistor (For AF driver and output stages High collector current) PNPSiliconAFTransistor •ForAFdriverandoutputstages •Highcollectorcurrent •Lowcollector-emittersaturationvoltage •Complementarytypes:BCP54M...BCP56M(NPN) | SIEMENS Siemens Ltd | | | |
45 V, 1 A PNP medium power transistors Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability •AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
45 V, 1 A NPN medium power transistors Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability •AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
45 V, 1 A PNP medium power transistors Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability •AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | |
BCP产品属性
- 类型
描述
- 型号
BCP
- 功能描述
达林顿晶体管 NPN Silicn Darlingtn TRANSISTOR
- RoHS
否
- 制造商
Texas Instruments
- 配置
Octal
- 晶体管极性
NPN 集电极—发射极最大电压
- VCEO
50 V 发射极 - 基极电压
- VEBO
集电极—基极电压
- 最大直流电集电极电流
0.5 A
- 最大工作温度
+ 150 C
- 安装风格
SMD/SMT
- 封装/箱体
SOIC-18
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
原厂原装 |
23+ |
模块 |
400 |
价格优势、原装现货、客户至上。欢迎广大客户来电查询 |
|||
NA |
SOT-223 |
15620 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
SeCoS |
589220 |
16余年资质 绝对原盒原盘 更多数量 |
|||||
SeCoS |
20+ |
1000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
||||
SECOS |
2021+ |
SOT-89 |
89963 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
SECOS-喜可士 |
24+25+/26+27+ |
SOT-89-3 |
18800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
SeCoS |
20+ |
SOT-89 |
43000 |
原装优势主营型号-可开原型号增税票 |
|||
SECOS |
23+ |
SOT-89 |
50000 |
原装正品 支持实单 |
|||
SECOS |
22+ |
SOT-89 |
9600 |
原装现货,优势供应,支持实单! |
|||
SeCoS |
2023+ |
700000 |
柒号芯城跟原厂的距离只有0.07公分 |
BCP芯片相关品牌
BCP规格书下载地址
BCP参数引脚图相关
- C80
- c62f
- c430p
- c3055
- c3000
- c2073
- c20001
- c2000
- c188
- c1209
- c1008
- c1000
- bul128a
- bul128
- bu406
- bq5
- biss0001
- bga
- bf419
- BDM
- BCP52/10
- BCP52
- BCP51/16
- BCP51/10
- BCP51
- BCP49
- BCP48
- BCP313
- BCP29
- BCP28
- BCP238
- BCP237
- BCP211
- BCP194
- BCP1898
- BCP1766
- BCP160T
- BCP160C
- BCP157
- BCP156
- BCP149
- BCP148
- BCP147
- BCP1213
- BCP120T
- BCP120C
- BCP109
- BCP108
- BCP107
- BCP080T
- BCP080C
- BCP060T
- BCP060C
- BCP040T
- BCP040C
- BCP030T
- BCP030C
- BCP020T
- BCP020C
- BCN4D
- BCN31L
- BCN31
- BCN21
- BCN168
- BCN164
- BCN10
- BCN_18
- BCN_12
- BCM8727
- BCM8706
- BCM8705
- BCM8704
- BCM8703
- BCM8702
- BCM8603
- BCM856S
- BCM8512
- BCM847
- BCM846S
- BCF93C
- BCF93B
- BCF93
- BCF92C
- BCF92B
- BCF92
- BCF81R
- BCF81
- BCF70R
- BCF70
- BCF39C
- BCF39B
- BCF39
- BCF33R
- BCF33
- BCF32R
- BCF32
- BCF30R
- BCF30
- BCF29R
BCP数据表相关新闻
BCM89811B1AWMLG
BCM89811B1AWMLG
2023-5-16BCM89811B1AWMLG 以太网 IC
BCM89811B1AWMLG以太网ICAutomotiveBroadR-ReachEthernetPHY
2023-3-2BCM89811 1AWMLG 原装正品 仓库现货
www.hfxcom.com
2022-3-17BCP51-16,
BCP51-16,
2020-8-19BCP51-161A45V145MHz45V高端芯片热卖产品质量保证可提供样品
BCP51-161A45V145MHz45V高端芯片热卖产品质量保证可提供样品
2019-2-28BCP5145V145MHz1W高端芯片热卖产品质量保证可提供样品
BCP5145V145MHz1W高端芯片热卖产品质量保证可提供样品
2019-2-28
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
