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BCP51晶体管资料
BCP51别名:BCP51三极管、BCP51晶体管、BCP51晶体三极管
BCP51生产厂家:荷兰飞利浦公司
BCP51制作材料:Si-PNP
BCP51性质:低频或音频放大 (LF)_功率放大 (L)
BCP51封装形式:贴片封装
BCP51极限工作电压:45V
BCP51最大电流允许值:1A
BCP51最大工作频率:<1MHZ或未知
BCP51引脚数:3
BCP51最大耗散功率:1.5W
BCP51放大倍数:β=250
BCP51图片代号:H-99
BCP51vtest:45
BCP51htest:999900
- BCP51atest:1
BCP51wtest:1.5
BCP51代换 BCP51用什么型号代替:
BCP51价格
参考价格:¥0.6167
型号:BCP51 品牌:Fairchild 备注:这里有BCP51多少钱,2024年最近7天走势,今日出价,今日竞价,BCP51批发/采购报价,BCP51行情走势销售排行榜,BCP51报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
BCP51 | PNP medium power transistors DESCRIPTION PNPmediumpowertransistorinaSOT223plasticpackage.NPNcomplements:BCP54,BCP55andBCP56. FEATURES •Highcurrent(max.1A) •Lowvoltage(max.80V) •Mediumpower(max.1.3W). APPLICATIONS •Audio,telephonyandautomotiveapplications •Thickandthin-filmcircuits | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | ||
BCP51 | PNP Silicon AF Transistors PNPSiliconAFTransistors ●ForAFdriverandoutputstages ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BCP54...BCP56(NPN) | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | ||
BCP51 | Surface mount Si-Epitaxial PlanarTransistors SurfaceMountGeneralPurposeSi-Epi-PlanarTransistors •Powerdissipation1.3W •PlasticcaseSOT-223 •Weightapprox.0.04g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled | DiotecDIOTEC 德欧泰克 | ||
BCP51 | PNP Medium Power Transistors ■Features ●ForAFdriverandoutputstages ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage ●ComplementarytoBCP54,BCP55,BCP56 | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | ||
BCP51 | PNP SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223 Features •BVCEO>-45V,-60V&-80V •IC=-1AHighContinuousCollectorCurrent •ICM=-2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(sat) | DIODESDiodes Incorporated 达尔科技 | ||
BCP51 | PNP Silicon AF Transistors (For AF driver and output stages High collector current) PNPSiliconAFTransistors ●ForAFdriverandoutputstages ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BCP54…BCP56(NPN) | SIEMENS Siemens Ltd | ||
BCP51 | -1A , -45V PNP Plastic Encapsulate Transistor FEATURES ●ForAFdriverandoutputstages ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage | SECOS SeCoS Halbleitertechnologie GmbH | ||
BCP51 | 45 V, 1 A PNP medium power transistors Generaldescription PNPmediumpowertransistorseriesinSurface-MountedDevice(SMD)plasticpackages. Featuresandbenefits ■Highcurrent ■Threecurrentgainselections ■Highpowerdissipationcapability ■Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT10 | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | ||
BCP51 | High Collector Current Features •Highcollectorcurrent •1.3Wpowerdissipation. | SKTECHNOLGYSHIKE Electronics 時科广东時科微实业有限公司 | ||
BCP51 | TRANSISTOR (PNP) FEATURES •ForAFdriverandoutputstages •Highcollectorcurrent •Lowcollector-emittersaturationvoltage •Complementarytypes:BCP54...BCP56(NPN) | WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳实业深圳市永而佳实业有限公司 | ||
BCP51 | SOT-223 Plastic-Encapsulate Transistors TRANSISTOR(PNP) FEATURES •ForAFdriverandoutputstages •Highcollectorcurrent •Lowcollector-emittersaturationvoltage •Complementarytypes:BCP54...BCP56(NPN) | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd | ||
BCP51 | Plastic-Encapsulate Transistors FEATURES •ForAFdriverandoutputstages •Highcollectorcurrent •Lowcollector-emittersaturationvoltage •Complementarytypes:BCP54...BCP56(NPN) | HOTTECHGuangdong Hottech Co. Ltd. 合科泰广东合科泰实业有限公司 | ||
BCP51 | PNP Transistors Features ●ForAFdriverandoutputstages ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage ●ComplementarytoBCP54,BCP55,BCP56 | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | ||
BCP51 | SOT-223 Plastic-Encapsulate Transistors FEATURES ForAFdriverandoutputstages Highcollectorcurrent Lowcollector-emittersaturationvoltage Complementarytypes:BCP54...BCP56(NPN) | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | ||
BCP51 | PNP SILICON PLANAR EPITAXIAL TRANSISTORS GeneralPurposeMediumPowerDCApplications ComplementaryBCP54BCP55andBCP56 | CDIL CDIL | ||
BCP51 | PNP Transistors 文件:673.03 Kbytes Page:2 Pages | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | ||
BCP51 | 封装/外壳:TO-261-4,TO-261AA 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS PNP 45V 1.5A SOT223-4 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ||
BCP51 | PNP Silicon AF Transistors 文件:817.94 Kbytes Page:7 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | ||
BCP51 | TRANSISTOR (PNP) 文件:374.8 Kbytes Page:3 Pages | FS First Silicon Co., Ltd | ||
BCP51 | SOT-223 PIastic-Encapsulate Transistors 文件:1.66704 Mbytes Page:4 Pages | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯电子上海雷卯电子科技有限公司 | ||
BCP51 | SOT-223 Package Outline Dimensions 文件:747.72 Kbytes Page:2 Pages | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | ||
BCP51 | Surface Mount General Purpose Si-Epi-Planar Transistors 文件:108.22 Kbytes Page:2 Pages | DiotecDIOTEC 德欧泰克 | ||
BCP51 | 45 V, 1 A PNP medium power transistors 文件:144.01 Kbytes Page:15 Pages | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | ||
BCP51 | PNP Silicon AF Transistors 文件:498.68 Kbytes Page:6 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | ||
BCP51 | PNP General Purpose Amplifier 文件:40.26 Kbytes Page:3 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | ||
SOT-223 Plastic-Encapsulate Transistors FEATURES ForAFdriverandoutputstages Highcollectorcurrent Lowcollector-emittersaturationvoltage Complementarytypes:BCP54...BCP56(NPN) | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | |||
PNP Silicon AF Transistors (For AF driver and output stages High collector current) PNPSiliconAFTransistors ●ForAFdriverandoutputstages ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BCP54…BCP56(NPN) | SIEMENS Siemens Ltd | |||
PNP Silicon AF Transistors PNPSiliconAFTransistors ●ForAFdriverandoutputstages ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BCP54...BCP56(NPN) | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
PNP Plastic-Encapsulate Transistors Features •ForAFdriverandoutputstages •Highcollectorcurrent •Lowcollector-emittersaturationvoltage •Complementarytypes:BCP54...BCP56(NPN) •LeadFreeFinish/RohsCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammability | MCCMicro Commercial Components 美微科美微科半导体公司 | |||
45 V, 1 A PNP medium power transistors Featuresandbenefits Highcurrent Threecurrentgainselections Highpowerdissipationcapability Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT1061) LeadlessverysmallSMDplasticpackagewithmediumpowercapability(SOT1061) AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
45 V, 1 A PNP medium power transistors Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability •AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
45 V, 1 A NPN medium power transistors Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability •AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
PNP SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223 Features •BVCEO>-45V,-60V&-80V •IC=-1AHighContinuousCollectorCurrent •ICM=-2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(sat) | DIODESDiodes Incorporated 达尔科技 | |||
PNP medium power transistors DESCRIPTION PNPmediumpowertransistorinaSOT223plasticpackage.NPNcomplements:BCP54,BCP55andBCP56. FEATURES •Highcurrent(max.1A) •Lowvoltage(max.80V) •Mediumpower(max.1.3W). APPLICATIONS •Audio,telephonyandautomotiveapplications •Thickandthin-filmcircuits | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
PNP Silicon AF Transistors (For AF driver and output stages High collector current) PNPSiliconAFTransistors ●ForAFdriverandoutputstages ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BCP54…BCP56(NPN) | SIEMENS Siemens Ltd | |||
PNP Silicon AF Transistors PNPSiliconAFTransistors ●ForAFdriverandoutputstages ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BCP54...BCP56(NPN) | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
PNP Plastic-Encapsulate Transistors Features •ForAFdriverandoutputstages •Highcollectorcurrent •Lowcollector-emittersaturationvoltage •Complementarytypes:BCP54...BCP56(NPN) •LeadFreeFinish/RohsCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammability | MCCMicro Commercial Components 美微科美微科半导体公司 | |||
-1A , -45V PNP Plastic Encapsulate Transistor FEATURES ●ForAFdriverandoutputstages ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage | SECOS SeCoS Halbleitertechnologie GmbH | |||
45 V, 1 A PNP medium power transistors Featuresandbenefits Highcurrent Threecurrentgainselections Highpowerdissipationcapability Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT1061) LeadlessverysmallSMDplasticpackagewithmediumpowercapability(SOT1061) AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
PNP Silicon Epitaxial Planar Transistor Features ®HighCollectorCurrent ®LowCollector-emitterSaturationVoltage | TECHPUBLICTECH PUBLIC Electronics co LTD 台舟電子台舟電子股份有限公司 | |||
45 V, 1 A PNP medium power transistors Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability •AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
45 V, 1 A NPN medium power transistors Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability •AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
PNP SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223 Features •BVCEO>-45V,-60V&-80V •IC=-1AHighContinuousCollectorCurrent •ICM=-2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(sat) | DIODESDiodes Incorporated 达尔科技 | |||
PNP SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223 Features •BVCEO>-45V,-60V&-80V •IC=-1AHighContinuousCollectorCurrent •ICM=-2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(sat) | DIODESDiodes Incorporated 达尔科技 | |||
PNP Silicon AF Transistors (For AF driver and output stages High collector current) PNPSiliconAFTransistors ●ForAFdriverandoutputstages ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BCP54…BCP56(NPN) | SIEMENS Siemens Ltd | |||
PNP Silicon AF Transistor (For AF driver and output stages High collector current) PNPSiliconAFTransistor •ForAFdriverandoutputstages •Highcollectorcurrent •Lowcollector-emittersaturationvoltage •Complementarytypes:BCP54M...BCP56M(NPN) | SIEMENS Siemens Ltd | |||
PNP Silicon AF Transistor (For AF driver and output stages High collector current) PNPSiliconAFTransistor •ForAFdriverandoutputstages •Highcollectorcurrent •Lowcollector-emittersaturationvoltage •Complementarytypes:BCP54M...BCP56M(NPN) | SIEMENS Siemens Ltd | |||
45 V, 1 A PNP medium power transistors Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability •AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
45 V, 1 A NPN medium power transistors Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability •AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
45 V, 1 A PNP medium power transistors Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability •AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
PNP SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223 Features •BVCEO>-45V,-60V&-80V •IC=-1AHighContinuousCollectorCurrent •ICM=-2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(sat) | DIODESDiodes Incorporated 达尔科技 | |||
Surface Mount General Purpose Si-Epi-Planar Transistors 文件:108.22 Kbytes Page:2 Pages | DiotecDIOTEC 德欧泰克 | |||
PNP Silicon AF Transistors 文件:498.68 Kbytes Page:6 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
PNP Silicon AF Transistors 文件:817.94 Kbytes Page:7 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
PNP Silicon Medium Power Transistor 文件:269.78 Kbytes Page:2 Pages | SECOS SeCoS Halbleitertechnologie GmbH | |||
45 V, 1 A PNP medium power transistors 文件:253.85 Kbytes Page:22 Pages | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
PNP Transistors 文件:673.03 Kbytes Page:2 Pages | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | |||
PNP MEDIUM POWER TRANSISTORS IN SOT223 文件:399.5 Kbytes Page:7 Pages | DIODESDiodes Incorporated 达尔科技 | |||
封装/外壳:TO-261-4,TO-261AA 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS PNP 45V 1A SOT223 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
PNP Silicon AF Transistors 文件:817.94 Kbytes Page:7 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |
BCP51产品属性
- 类型
描述
- 型号
BCP51
- 功能描述
两极晶体管 - BJT SOT-223 PNP GP AMP
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
NEXPERIA/安世 |
23+ |
SOT-223 |
100586 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
NXP |
24+ |
SOT-223 |
4860 |
十年信誉,只做全新原装正品现货,以优势说话 !! |
|||
NXP |
2016+ |
SOT223 |
6000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
NXP |
2018+ |
SOT223 |
80000 |
代理进口原装现货假一赔十 |
|||
DIODES/美台 |
21+ |
SOT-223-4 |
4713 |
全新原装现货 |
|||
NXP |
2020+ |
SOT-223 |
4264 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
Nexperia(安世) |
23+ |
SOT-223-4 |
3727 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
PHILIPS |
1803+ |
SOT223 |
790 |
公司原装现货,可来看货! |
|||
PHILIPS |
23+ |
SOT-223 |
1110 |
全新原装 |
|||
FAIRCHILD |
16+ |
SOT-223 |
5000 |
原装现货假一罚十 |
BCP51规格书下载地址
BCP51参数引脚图相关
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DdatasheetPDF页码索引
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