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BC847C价格
参考价格：￥0.1237
型号：BC847C 品牌：Taiwan Semi 备注：这里有BC847C多少钱，2024年最近7天走势，今日出价，今日竞价，BC847C批发/采购报价，BC847C行情走势销售排行榜，BC847C报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
BC847C | NPNgeneralpurposetransistors DESCRIPTION NPNtransistorinaSOT23plasticpackage.PNPcomplements:BC856,BC857andBC858. FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.65V). APPLICATIONS •Generalpurposeswitchingandamplification. | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 |  |   |
BC847C | NPNSURFACEMOUNTSMALLSIGNALTRANSISTOR Features •EpitaxialDieConstruction •IdeallySuitedforAutomaticInsertion •310mWPowerDissipation •ComplementaryPNPTypesAvailable(BC856-BC858) •ForSwitchingandAFAmplifierApplications | TRSYS Transys Electronics |  | |
BC847C | NPNSiliconAFTransistors(ForAFinputstagesanddriverapplicationsHighcurrentgain) NPNSiliconAFTransistors Features ●ForAFinputstagesanddriverapplications ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Lownoisebetween30Hzand15kHz ●Complementarytypes:BC856,BC857,BC859,BC860(PNP) | SIEMENS Siemens Ltd |  | |
BC847C | NPNSMALLSIGNALSURFACEMOUNTTRANSISTOR Features •BVCEO>45V •IC=100mACollectorCurrent •EpitaxialPlanarDieConstruction •Ultra-SmallSurfaceMountPackage •ComplementaryPNPType:MMBT3906T •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •Qualifie | DIODESDiodes Incorporated 达尔科技 |  | |
BC847C | NPNSURFACEMOUNTSMALLSIGNALTRANSISTOR Features •IdeallySuitedforAutomaticInsertion •ComplementaryPNPTypes:BC856–BC858 •ForswitchingandAFAmplifierApplications •TotallyLead-Free&FullyRoHScompliant(Notes1&2) •HalogenandAntimonyFree.GreenDevice(Note3) •QualifiedtoAEC-Q101StandardsforH | DIODESDiodes Incorporated 达尔科技 | | |
BC847C | SurfacemountSi-EpitaxialPlanarTransistors GeneralPurposeTransistors •Powerdissipation250mW •PlasticcaseSOT-23 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled | DiotecDIOTEC 德欧泰克 |  | |
BC847C | NPNSiliconAFTransistors •ForAFinputstagesanddriverapplications •Highcurrentgain •Lowcollector-emittersaturationvoltage •Lownoisebetween30Hzand15kHz •Complementarytypes: BC856...-BC860...(PNP) •Pb-free(RoHScompliant)package1) •QualifiedaccordingAECQ101 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |  | |
BC847C | SMALLSIGNALNPNTRANSISTORS ■SILICONEPITAXIALPLANARNPNTRANSISTORS ■MINIATURESOT-23PLASTICPACKAGEFORSURFACEMOUNTINGCIRCUITS ■TAPEANDREELPACKING ■BC847B-THEPNPCOMPLEMENTARYTYPEISBC857B | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 |  | |
BC847C | GeneralPurposeTransistors GeneralPurposeTransistors NPNSilicon | ETL E-Tech Electronics LTD |  | |
BC847C | GeneralPurposeTransistorNPNSilicon GeneralPurposeTransistor NPNSilicon *MoistureSensitivityLevel:1 *ESDRating-HumanBodyModel:>4000V -MachineModel:>400V | WEITRONWEITRON 威堂電子科技 |  | |
BC847C | 45V,100mANPNgeneral-purposetransistors DESCRIPTION NPNtransistorinaSOT23plasticpackage.PNPcomplements:BC856,BC857andBC858. FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.65V). APPLICATIONS •Generalpurposeswitchingandamplification. | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | |
BC847C | 0.2WattsNPNPlastic-EncapsulateTransistors Features ♦Epitaxialplanardieconstruction ♦Surfacedevicetypemounting ♦Moisturesensitivitylevel1 ♦MatteTin(Sn)leadfinishwithNickel(Ni)underplate ♦PbfreeversionandRoHScompliant ♦Greencompound(Halogenfree)withsuffixGonpackingcodeandprefixGondat | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 |  | |
BC847C | NPNgeneralpurposeTransistor FEATURES •Highcurrentgain. •ExcellenthFElinearity. •Lownoisebetween30Hzand15kHz. •ForAFinputstagesanddriverapplications. APPLICATIONS •Generalpurposeswitchingandamplification. | BILINGalaxy Semi-Conductor Holdings Limited 世纪微电子常州银河世纪微电子股份有限公司 |  | |
BC847C | SMDGeneralPurposeTransistor(NPN) Features •NPNSiliconEpitaxialPlanarTransistorforSwitchingandAmplifierApplications | TAITRON TAITRON |  | |
BC847C | NPNGENERALPURPOSETRANSISTORS FEATURES •Generalpurposeamplifierapplications •NPNepitaxialsilicon,planardesign •CollectorcurrentIC=100mA •Pbfreeproductareavailable:99SnabovecanmeetRohsenvironmentsubstancedirectiverequest | PANJITPANJIT International Inc. 强茂強茂股份有限公司 |  | |
BC847C | 45V,100mANPNgeneral-purposetransistors Generaldescription NPNgeneral-purposetransistorsinsmallplasticpackages. Features ■Lowcurrent ■Lowvoltage ■Threedifferentgainselections Applications ■General-purposeswitchingandamplification | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 |  | |
BC847C | NPNGeneralPurposeTransistor ■Features ●Ideallysuitedforautomaticinsertion ●ForswitchingandAFamplifierapplications | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 |  | |
BC847C | BC846A FEATURES •Collectcurrent:0.1A •GeneralPurposeTransistorNPNType •RoHScompliantproduct •OperatingTemp.:-55OC~+150OC | SECOS SeCoS Halbleitertechnologie GmbH |  | |
BC847C | NPNgeneralpurposeTransistor FEATURES •Highcurrentgain. •ExcellenthFElinearity. •Lownoisebetween30Hzand15kHz. •ForAFinputstagesanddriverapplications. APPLICATIONS •Generalpurposeswitchingandamplification. | PFSShenzhen Ping Sheng Electronics Co., Ltd. 平盛电子深圳市平盛电子有限公司 |  | |
BC847C | TRANSISTOR(NPN) FEATURES •Ideallysuitedforautomaticinsertion •ForSwitchingandAFAmplifierApplications | HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd. 金誉半导体深圳市金誉半导体股份有限公司 |  | |
BC847C | NPNSmallSignalTransistor310mW Features •LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •PowerDissipation:0.225W(Tamb=25°C)(Note1) •CollectorCurrent:0.1A •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 | MCCMicro Commercial Components 美微科美微科半导体公司 |  | |
BC847C | NPNGeneralPurposeAmplifier Features •SwitchingandAmplifierApplications •Suitableforautomaticinsertioninthickandthin-filmcircuits •LowNoise:BC849,BC850 •ComplementtoBC856...BC860 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  | |
BC847C | Plastic-EncapsulateTransistors FEATURES ForgeneralAFapplications Highcollectorcurrent Highcurrentgain Lowcollector-emittersaturationvoltage | HOTTECHGuangdong Hottech Co. Ltd. 合科泰广东合科泰实业有限公司 |  | |
BC847C | Plastic-EncapsulateTransistors FEATURES ForgeneralAFapplications Highcollectorcurrent Highcurrentgain Lowcollector-emittersaturationvoltage | OLITECH Olitech Electronics Co.Ltd |  | |
BC847C | SmallSignalTransistors(NPN) FEATURES ♦NPNSiliconEpitaxialPlanarTransistors forswitchingandAFamplifierapplications. ♦Especiallysuitedforautomaticinsertionin thick-andthin-filmcircuits. ♦Thesetransistorsaresubdividedintothree groupsA,BandCaccordingtotheircurrentgain.The typ | GE GE Industrial Company |  | |
BC847C | GeneralPurposeTransistors GeneralPurposeTransistors NPNSilicon | YEASHINYea Shin Technology Co., Ltd 亞昕科技亞昕科技股份有限公司 |  | |
BC847C | EpoxymeetsUL-94V-0flammabilityrating NPNSiliconEpitaxialTransistor forswitchingandamplifierapplications | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯电子上海雷卯电子科技有限公司 |  | |
BC847C | SMDNPNTransistor GeneralPurposeTransistors NPNSilicon Features •MoistureSensitivityLevel:1 •ESDRating–HumanBodyModel:>4000V,MachineModel:>400V •Epitaxialplanachipconstruction •Idealformediumpowerapplicationandswitching •Ascomplementarytype,thePNPtransistor | FORMOSAFormosa MS 美丽微半导体美丽微半导体股份有限公司 |  | |
BC847C | NPNSILICONPLANAREPITAXIALTRANSISTORS ForuseinDriverStagesofAudioAmplifierinThickandThin-filmHybridCircuits | CDIL CDIL |  | |
BC847C | 45V,100mANPNgeneral-purposetransistors Featuresandbenefits •General-purposetransistors •SMDplasticpackages •Threedifferentgainselections | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 |  | |
BC847C | 封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：散装 描述：TRANS NPN 45V 0.1A SOT23 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | Yangzhou Yangjie Electronic Technology Co.,Ltd Yangzhou Yangjie Electronic Technology Co.,Ltd |  | |
BC847C | Ideallysuitedforautomaticinsertion 文件：450.11 Kbytes Page：6 Pages | RECTRONRECTRON LTD 瑞创深圳市瑞创科技有限公司 |  | |
BC847C | SMDGeneralPurposeNPNTransistors 文件：144.84 Kbytes Page：2 Pages | DiotecDIOTEC 德欧泰克 | | |
BC847C | NPNSiliconPlanarEpitaxialTransistors 文件：146.06 Kbytes Page：1 Pages | FCI Amphenol ICC |  | |
BC847C | NPNgeneralpurposeTransistor 文件：220 Kbytes Page：6 Pages | BILINGalaxy Semi-Conductor Holdings Limited 世纪微电子常州银河世纪微电子股份有限公司 | | |
BC847C | 45V,100mANPNgeneral-purposetransistors 文件：104.72 Kbytes Page：15 Pages | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | |
BC847C | NPNgeneralpurposeTransistor 文件：2.06563 Mbytes Page：4 Pages | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司 |  | |
BC847C | NPNPlastic-EncapsulateTransistors 文件：1.35798 Mbytes Page：5 Pages | JINGHENG Jinan Jing Heng Electronics Co., Ltd. |  | |
BC847C | NPNSiliconEpitaxialGeneralPurposeTransistors 文件：1.84399 Mbytes Page：13 Pages | FUTUREWAFER FutureWafer Tech Co.,Ltd |  | |
BC847C | 45V,100mANPNgeneral-purposetransistors 文件：104.72 Kbytes Page：15 Pages | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | |
BC847C | NPNTransistors 文件：1.66599 Mbytes Page：3 Pages | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | | |
BC847C | NPNSmallSignalTransistor 文件：218.99 Kbytes Page：5 Pages | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | | |
BC847C | NPNTransistors 文件：704.82 Kbytes Page：4 Pages | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 |  | |
BC847C | NPNPlastic-EncapsulateTransistors 文件：226.31 Kbytes Page：2 Pages | MCCMicro Commercial Components 美微科美微科半导体公司 | | |
BC847C | SURFACEMOUNTNPNSILICONTRANSISTOR 文件：345.56 Kbytes Page：2 Pages | CentralCentral Semiconductor Corp 美国中央半导体 |  | |
BC847C | NPNSiliconAFTransistors 文件：183.85 Kbytes Page：19 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | |
BC847C | SOT-23BIPOLARTRANSISTORSTRANSISTOR(NPN) 文件：456.7 Kbytes Page：2 Pages | RECTRONRECTRON LTD 瑞创深圳市瑞创科技有限公司 | | |
BC847C | 45V,100mANPNgeneral-purposetransistors 文件：131.51 Kbytes Page：18 Pages | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | |
SOT23NPNSILICONPLANARGENERALPURPOSETRANSISTORS SOT23NPNSILICONPLANARGENERALPURPOSETRANSISTORS | ETCList of Unclassifed Manufacturers 未分类制造商 |  | | |
SOT23NPNSILICONPLANAR SOT23NPNSILICONPLANARGENERALPURPOSETRANSISTORS | Zetex Zetex Semiconductors |  | | |
NPNSURFACEMOUNTSMALLSIGNALTRANSISTOR Features •IdeallySuitedforAutomaticInsertion •ComplementaryPNPTypes:BC856–BC858 •ForswitchingandAFAmplifierApplications •TotallyLead-Free&FullyRoHScompliant(Notes1&2) •HalogenandAntimonyFree.GreenDevice(Note3) •QualifiedtoAEC-Q101StandardsforH | DIODESDiodes Incorporated 达尔科技 | | | |
NPNSMALLSIGNALSURFACEMOUNTTRANSISTOR Features •BVCEO>45V •IC=100mACollectorCurrent •EpitaxialPlanarDieConstruction •Ultra-SmallSurfaceMountPackage •ComplementaryPNPType:MMBT3906T •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •Qualifie | DIODESDiodes Incorporated 达尔科技 | | | |
NPNDUALSURFACEMOUNTTRANSISTOR Features •BVCEO>45V •Lowprofile0.4mmhighpackageforthinapplications •Ultra-SmallSurfaceMountPackage •TotallyLead-Free&FullyRoHScompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •QualifiedtoAEC-Q101StandardsforHighReliability | DIODESDiodes Incorporated 达尔科技 | | | |
NPNDUALSURFACEMOUNTTRANSISTOR Features •BVCEO>45V •Lowprofile0.4mmhighpackageforthinapplications •Ultra-SmallSurfaceMountPackage •TotallyLead-Free&FullyRoHScompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •QualifiedtoAEC-Q101StandardsforHighReliability | DIODESDiodes Incorporated 达尔科技 | | | |
DualGeneralPurposeTransistors DualGeneralPurposeTransistors NPNDuals Thesetransistorsaredesignedforgeneralpurposeamplifierapplications.TheyarehousedintheSOT–363/SC–88whichisdesignedforlowpowersurfacemountapplications. | YEASHINYea Shin Technology Co., Ltd 亞昕科技亞昕科技股份有限公司 | | | |
Plastic-EncapsulateTransistors FEATURES Twotransistorsinonepackage Reducesnumberofcomponentsandboardspace Nomutualinterferencebetweenthetransistors | GWSEMIGoodwork Semiconductor Co., Ltd . 唯聖電子唯聖電子有限公司 |  | | |
DualGeneralPurposeTransistors DualGeneralPurposeTransistors NPNDuals Thesetransistorsaredesignedforgeneralpurposeamplifierapplications.TheyarehousedintheSOT–363/SC–88whichisdesignedforlowpowersurfacemountapplications. | ETL E-Tech Electronics LTD | | | |
DualGeneralPurposeTransistors Thesetransistorsaredesignedforgeneralpurposeamplifierapplications.TheyarehousedintheSOT−363/SC−88whichisdesignedforlowpowersurfacemountapplications. Features •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompliant | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  | | |
DualGeneralPurposeTransistors DualGeneralPurposeTransistors NPNDuals Thesetransistorsaredesignedforgeneralpurposeamplifierapplications.TheyarehousedintheSOT−363/SC−88whichisdesignedforlowpowersurfacemountapplications. Features •SandNSVPrefixesforAutomotiveandOtherApplications Requiri | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
DualGeneralPurposeTransistors DualGeneralPurposeTransistors NPNDuals Thesetransistorsaredesignedforgeneralpurposeamplifierapplications.TheyarehousedintheSOT-563whichisdesignedforlowpowersurfacemountapplications. •Lead-FreeSolderPlating | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | |
BC847C产品属性
- 类型
描述
- 型号
BC847C
- 功能描述
两极晶体管 - BJT 1500W 20V 5% UNI TRANSZORB-TVS
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
三年内 |
1983 |
纳立只做原装正品13590203865 |
|||||
onsemi(安森美) |
23+ |
SOT-563 |
3727 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
onsemi |
23+ |
SOT-563,SOT-666 |
30000 |
晶体管-分立半导体产品-原装正品 |
|||
INFINEON/英飞凌 |
22+ |
SOT-23 |
100000 |
代理渠道/只做原装/可含税 |
|||
ON(安森美) |
23+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
|||
ON/安森美 |
14+ |
SOT323 |
2880 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
INFINEON |
23+ |
SOT23 |
20000 |
原厂原装正品现货 |
|||
ON Semiconductor |
2010+ |
N/A |
3503 |
加我qq或微信，了解更多详细信息,体验一站式购物 |
|||
Nexperia(安世) |
23+ |
DFN3(1.1x1) |
6000 |
||||
NXP/恩智浦 |
24+ |
SOT-23 |
98000 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
BC847C芯片相关品牌
BC847C规格书下载地址
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- BC847BV,315
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- BC846UF
BC847C数据表相关新闻
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2023-2-8BC847BVN,115 NXP/恩智浦 21+ SOT-666
https://hfx03.114ic.com/
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焕盛达竭诚为您提供一站式配套服务。当天下单，当天发货；
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深圳市顺德利科技有限公司0755-8272566018128853661（微信75056055）QQ：782954141
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2019-3-28
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