200mW,NPNSmallSignalTransistor

Features ◇Epitaxialplanardieconstruction ◇Surfacedevicetypemounting ◇Moisturesensitivitylevel1 ◇MatteTin(Sn)leadfinishwithNickel(Ni)underplate ◇PbfreeversionandRoHScompliant ◇Greencompound(Halogenfree)withsuffixGonpackingcodeandprefixGondatecode

NPNgeneralpurposetransistor

DESCRIPTION NPNtransistorinaSOT23plasticpackage. PNPcomplement:BC807. FEATURES •Highcurrent(max.500mA) •Lowvoltage(max.45V). APPLICATIONS •Generalpurposeswitchingandamplification.

NPNSURFACEMOUNTSMALLSIGNALTRANSISTOR

Features mWPowerDissipation IdeallySuitedforAutomaticInsertion EpitaxialPlanarDieConstruction ForSwitching,AFDriverandAmplifier Applications ComplementaryPNPTypesAvailable(BC807)

NPNSiliconAFTransistors

●ForgeneralAFapplications ●Highcollectorcurrent ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BC807,BC808(PNP)

NPNSURFACEMOUNTSMALLSIGNALTRANSISTOR

Features ●IdeallySuitedforAutomaticInsertion ●EpitaxialPlanarDieConstruction ●ForSwitching,AFDriverandAmplifierApplications ●ComplementaryPNPTypesAvailable(BC807)

45VNPNSMALLSIGNALTRANSISTORINSOT23

Features BVCEO>45V IC=0.5AContinuousCollectorCurrent ICM=1APeakPulseCurrent ComplementaryPNPTypes:BC807-16 IdeallySuitedforAutomaticInsertion EpitaxialPlanarDieConstruction ForSwitchingandAFAmplifierApplications TotallyLead-Free&FullyRoHSComp