BC338晶体管资料

  • BC338(-16...-40)别名:BC338(-16...-40)三极管、BC338(-16...-40)晶体管、BC338(-16...-40)晶体三极管

  • BC338(-16...-40)生产厂家:德国AEG公司_德国椤茨标准电器公司_英国Mullard有限

  • BC338(-16...-40)制作材料:Si-NPN

  • BC338(-16...-40)性质:通用型 (Uni)_TR

  • BC338(-16...-40)封装形式:直插封装

  • BC338(-16...-40)极限工作电压:30V

  • BC338(-16...-40)最大电流允许值:0.8A

  • BC338(-16...-40)最大工作频率:<1MHZ或未知

  • BC338(-16...-40)引脚数:3

  • BC338(-16...-40)最大耗散功率:0.625W

  • BC338(-16...-40)放大倍数

  • BC338(-16...-40)图片代号:A-23

  • BC338(-16...-40)vtest:30

  • BC338(-16...-40)htest:999900

  • BC338(-16...-40)atest:.8

  • BC338(-16...-40)wtest:.625

  • BC338(-16...-40)代换 BC338(-16...-40)用什么型号代替:BC378,BC738,BC838,BC635,3DK4C,

BC338价格

参考价格:¥0.1669

型号:BC33825TA 品牌:Fairchild 备注:这里有BC338多少钱,2024年最近7天走势,今日出价,今日竞价,BC338批发/采购报价,BC338行情走势销售排行榜,BC338报价。
型号 功能描述 生产厂家&企业 LOGO 操作
BC338

AmplifierTransistor

TheLM337isanadjustable3–terminalnegativevoltageregulatorcapableofsupplyinginexcessof1.5Aoveranoutputvoltagerangeof–1.2Vto–37V.Thisvoltageregulatorisexceptionallyeasytouseandrequiresonlytwoexternalresistorstosettheoutputvoltage.Further,itemploysi

MotorolaMotorola, Inc

摩托罗拉

Motorola
BC338

NPNSiliconEpitaxialPlanarTransistorforswitchingandamplifierapplications???

NPNSiliconEpitaxialPlanarTransistorforswitchingandamplifierapplications

SEMTECH

Semtech Corporation

SEMTECH
BC338

NPNSiliconAFTransistors(HighcurrentgainHighcollectorcurrentLowcollector-emittersaturationvoltage)

●Highcurrentgain ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BC327,BC328(PNP)

SIEMENS

Siemens Ltd

SIEMENS
BC338

SWITCHINGANDAMPLIFIERAPPLICATIONS

SwitchingandAmplifierApplications •SuitableforAF-Driverstagesandlowpoweroutputstages •ComplementtoBC327/BC328

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
BC338

SmallSignalTransistors(NPN)

FEATURES ♦NPNSiliconEpitaxialPlanarTransistors forswitchingandamplifierapplications.Especially suitableforAF-driverstagesandlowpower outputstages. ♦Thesetypesarealsoavailablesubdi videdintothreegroups-16,-25,and-40, accordingtotheirDCcurrent

GE

GE Industrial Company

GE
BC338

EPITAXIALPLANARNPNTRANSISTOR(GENERALPURPOSE,SWITCHING)

GENERALPURPOSEAPPLICATION. SWITCHINGAPPLICATION. FEATURES •HighCurrent:IC=800mA. •DCCurrentGain:hFE=100~630(VCE=1V,Ic=100mA). •ForComplementarywithPNPtypeBC328.

KECKEC CORPORATION

KEC株式会社

KEC
BC338

SWITCHINGANDAMPLIFIERAPPLICATIONS

SWITCHINGANDAMPLIFIERAPPLICATIONS FEATURES *SuitableforAF-Driverstagesandlowpoweroutputstages *ComplementtoUTCBC327/328

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
BC338

AmplifierTransistors

AmplifierTransistorsNPNSilicon Features •Pb−FreePackagesareAvailable*

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
BC338

Si-EpitaxialPlanarTransistors

GeneralPurposeSi-EpitaxialPlanarTransistors •Powerdissipation625mW •PlasticcaseTO-92(10D3) •Weightapprox.0.18g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedinammopack

DiotecDIOTEC

德欧泰克

Diotec
BC338

NPNPlastic-EncapsulateTransistors

FEATURES Powerdissipation PCM:0.625W(Tamb=25℃) Collectorcurrent ICM:0.8A Collector-basevoltage V(BR)CBO:BC33750V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS
BC338

NPNSiliconEpitaxialPlanarTransistor

NPNSiliconEpitaxialPlanarTransistor forswitchingandamplifierapplications Thesetypesaresubdividedintothreegroups-16, -25and-40,accordingtotheirDCcurrentgain.

SEMTECH_ELECSEMTECH ELECTRONICS LTD.

先之科半导体先之科半导体科技(东莞)有限公司

SEMTECH_ELEC
BC338

TO-92Plastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES Powerdissipation PCM:0.625W(Tamb=25℃) Collectorcurrent ICM:0.8A Collector-basevoltage VCBO:BC33750V BC33830V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

JIANGSU
BC338

TO-92Plastic-EncapsulateTransistors(NPN)

TRANSISTOR(NPN) FEATURES ●Powerdissipation

TGS

Tiger Electronic Co.,Ltd

TGS
BC338

NPNSILICONAFMEDIUMPOWERTRANSISTOR

THEBC337,BC338ARENPNSILICONPLANAREPITAXIALTRANSISTORSFORUSEINAFDRIVERANDOUTPUTSTAGES,ASWELLASFORUNIVERSALAPPLICATIONS.THEBC337,BC338ARECOMPLEMENTARYTOTHEPNPTYPEBC327,BC328RESPECTIVELY.

MICRO-ELECTRONICS

Micro Electronics

MICRO-ELECTRONICS
BC338

NPNGeneralPurposeTransistor

WEITRONWEITRON

威堂電子科技

WEITRON
BC338

NPNEpitaxialSiliconTransistor

SwitchingandAmplifierApplications •SuitableforAF-Driverstagesandlowpoweroutputstages •ComplementtoBC327/BC328

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
BC338

SwitchingandAmplifierApplications

SwitchingandAmplifierApplications •SuitableforAF-Driverstagesandlowpoweroutputstages •ComplementtoBC327/BC328

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
BC338

SwitchingandAmplifierApplications

SwitchingandAmplifierApplications •SuitableforAF-Driverstagesandlowpoweroutputstages •ComplementtoBC327/BC328

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
BC338

SwitchingandAmplifierApplications

SwitchingandAmplifierApplications •SuitableforAF-Driverstagesandlowpoweroutputstages •ComplementtoBC327/BC328

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
BC338

SILICONPLANAREPITAXIALTRANSISTORS

SILICONPLANAREPITAXIALTRANSISTORS GeneralPurposeTransistorsBestSuitedforuseinDriverandOutputStagesofAudioAmplifier

CDIL

CDIL

CDIL
BC338

TRANSISTOR(NPN)

FEATURES •HighCurrent:IC=800mA. •DCCurrentGain:hFE=100630(VCE=1V,Ic=100mA). •ForComplementarywithPNPtypeBC327.

FS

First Silicon Co., Ltd

FS
BC338

SEMICONDUCTORS

文件:2.43533 Mbytes Page:31 Pages

etc2List of Unclassifed Manufacturers

etc2未分类制造商

etc2
BC338

TRANSISTOR(NPN)

文件:243.4 Kbytes Page:3 Pages

KOOCHIN

SHENZHEN KOO CHIN ELECTRONICS CO., LTD.

KOOCHIN
BC338

TRANSISTOR(NPN)

文件:128.07 Kbytes Page:1 Pages

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳实业深圳市永而佳实业有限公司

WINNERJOIN
BC338

封装/外壳:TO-226-3,TO-92-3 标准主体(!--TO-226AA) 包装:卷带(TR) 描述:TRANS NPN 25V 0.8A TO92-3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
BC338

SiliconNPNtransistorinaTO-92(R)PlasticPackage

文件:729.81 Kbytes Page:6 Pages

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN
BC338

SWITCHINGANDAMPLIFIERAPPLICATIONS

文件:148.4 Kbytes Page:3 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
BC338

EPITAXIALPLANARNPNTRANSISTOR

文件:343.79 Kbytes Page:2 Pages

KECKEC CORPORATION

KEC株式会社

KEC
BC338

SWITCHINGANDAMPLIFIERAPPLICATIONS

文件:117.48 Kbytes Page:3 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
BC338

GeneralPurposeSi-EpitaxialPlanarTransistors

文件:105.98 Kbytes Page:2 Pages

DiotecDIOTEC

德欧泰克

Diotec
BC338

TECHNICALSPECIFICATIONSOFNPNEPITAXIALPLANARTRANSISTOR

文件:215.03 Kbytes Page:1 Pages

DCCOMDc Components

直流元件直流元件有限公司

DCCOM

SWITCHINGANDAMPLIFIERAPPLICATIONS

SwitchingandAmplifierApplications •SuitableforAF-Driverstagesandlowpoweroutputstages •ComplementtoBC327/BC328

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

Si-EpitaxialPlanarTransistors

GeneralPurposeSi-EpitaxialPlanarTransistors •Powerdissipation625mW •PlasticcaseTO-92(10D3) •Weightapprox.0.18g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedinammopack

DiotecDIOTEC

德欧泰克

Diotec

AmplifierTransistor

TheLM337isanadjustable3–terminalnegativevoltageregulatorcapableofsupplyinginexcessof1.5Aoveranoutputvoltagerangeof–1.2Vto–37V.Thisvoltageregulatorisexceptionallyeasytouseandrequiresonlytwoexternalresistorstosettheoutputvoltage.Further,itemploysi

MotorolaMotorola, Inc

摩托罗拉

Motorola

NPNSiliconAFTransistors(HighcurrentgainHighcollectorcurrentLowcollector-emittersaturationvoltage)

●Highcurrentgain ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BC327,BC328(PNP)

SIEMENS

Siemens Ltd

SIEMENS

TO-92Plastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES Powerdissipation PCM:0.625W(Tamb=25℃) Collectorcurrent ICM:0.8A Collector-basevoltage VCBO:BC33750V BC33830V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

JIANGSU

NPNPlastic-EncapsulateTransistors

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •Capableof0.625WattsofPowerDissipation. •Collector-current0.8A •Collector-baseVoltage:VCBO=50V(BC337),VCBO=30V(BC338) •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginform

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

NPNTransistor

SmallSignalProduct Features ◇ForswitchingandAFamplifierapplications ◇Thesetypesaresubdividedintothreegroups-16,-25and-40, accordingtotheirDCcurrentgain ◇Moisturesensitivitylevel1 ◇Drivertransistor ◇PbfreeversionandRoHScompliant ◇Greencompound(Halog

TSCTaiwan Semiconductor Company, Ltd

台半 台湾半导体股份有限公司

TSC

SWITCHINGANDAMPLIFIERAPPLICATIONS

SwitchingandAmplifierApplications •SuitableforAF-Driverstagesandlowpoweroutputstages •ComplementtoBC327/BC328

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

AmplifierTransistor

TheLM337isanadjustable3–terminalnegativevoltageregulatorcapableofsupplyinginexcessof1.5Aoveranoutputvoltagerangeof–1.2Vto–37V.Thisvoltageregulatorisexceptionallyeasytouseandrequiresonlytwoexternalresistorstosettheoutputvoltage.Further,itemploysi

MotorolaMotorola, Inc

摩托罗拉

Motorola

Si-EpitaxialPlanarTransistors

GeneralPurposeSi-EpitaxialPlanarTransistors •Powerdissipation625mW •PlasticcaseTO-92(10D3) •Weightapprox.0.18g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedinammopack

DiotecDIOTEC

德欧泰克

Diotec

NPNSiliconAFTransistors(HighcurrentgainHighcollectorcurrentLowcollector-emittersaturationvoltage)

●Highcurrentgain ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BC327,BC328(PNP)

SIEMENS

Siemens Ltd

SIEMENS

TO-92Plastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES Powerdissipation PCM:0.625W(Tamb=25℃) Collectorcurrent ICM:0.8A Collector-basevoltage VCBO:BC33750V BC33830V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

JIANGSU

NPNTransistor

SmallSignalProduct Features ◇ForswitchingandAFamplifierapplications ◇Thesetypesaresubdividedintothreegroups-16,-25and-40, accordingtotheirDCcurrentgain ◇Moisturesensitivitylevel1 ◇Drivertransistor ◇PbfreeversionandRoHScompliant ◇Greencompound(Halog

TSCTaiwan Semiconductor Company, Ltd

台半 台湾半导体股份有限公司

TSC

AmplifierTransistors

AmplifierTransistorsNPNSilicon Features •Pb−FreePackagesareAvailable*

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

NPNPlastic-EncapsulateTransistors

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •Capableof0.625WattsofPowerDissipation. •Collector-current0.8A •Collector-baseVoltage:VCBO=50V(BC337),VCBO=30V(BC338) •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginform

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

NPNEpitaxialSiliconTransistor

SwitchingandAmplifierApplications •SuitableforAF-Driverstagesandlowpoweroutputstages •ComplementtoBC327/BC328

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

BC337/BC338NPNEpitaxialSiliconTransistor

Features SwitchingandAmplifierApplications SuitableforAF-DriverStagesandLow-PowerOutputStages ComplementtoBC327/BC328

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

AmplifierTransistors

AmplifierTransistorsNPNSilicon Features •Pb−FreePackagesareAvailable*

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

SWITCHINGANDAMPLIFIERAPPLICATIONS

SwitchingandAmplifierApplications •SuitableforAF-Driverstagesandlowpoweroutputstages •ComplementtoBC327/BC328

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

NPNSiliconAFTransistors(HighcurrentgainHighcollectorcurrentLowcollector-emittersaturationvoltage)

●Highcurrentgain ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BC327,BC328(PNP)

SIEMENS

Siemens Ltd

SIEMENS

AmplifierTransistor

TheLM337isanadjustable3–terminalnegativevoltageregulatorcapableofsupplyinginexcessof1.5Aoveranoutputvoltagerangeof–1.2Vto–37V.Thisvoltageregulatorisexceptionallyeasytouseandrequiresonlytwoexternalresistorstosettheoutputvoltage.Further,itemploysi

MotorolaMotorola, Inc

摩托罗拉

Motorola

Si-EpitaxialPlanarTransistors

GeneralPurposeSi-EpitaxialPlanarTransistors •Powerdissipation625mW •PlasticcaseTO-92(10D3) •Weightapprox.0.18g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedinammopack

DiotecDIOTEC

德欧泰克

Diotec

NPNPlastic-EncapsulateTransistors

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •Capableof0.625WattsofPowerDissipation. •Collector-current0.8A •Collector-baseVoltage:VCBO=50V(BC337),VCBO=30V(BC338) •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginform

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

TO-92Plastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES Powerdissipation PCM:0.625W(Tamb=25℃) Collectorcurrent ICM:0.8A Collector-basevoltage VCBO:BC33750V BC33830V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

JIANGSU

NPNTransistor

SmallSignalProduct Features ◇ForswitchingandAFamplifierapplications ◇Thesetypesaresubdividedintothreegroups-16,-25and-40, accordingtotheirDCcurrentgain ◇Moisturesensitivitylevel1 ◇Drivertransistor ◇PbfreeversionandRoHScompliant ◇Greencompound(Halog

TSCTaiwan Semiconductor Company, Ltd

台半 台湾半导体股份有限公司

TSC

SILICONPLANAREPITAXIALTRANSISTORS

SILICONPLANAREPITAXIALTRANSISTORS GeneralPurposeTransistorsBestSuitedforuseinDriverandOutputStagesofAudioAmplifier

CDIL

CDIL

CDIL

GeneralPurposeSi-EpitaxialPlanarTransistors

GeneralPurposeSi-EpitaxialPlanarTransistors •Powerdissipation625mW •PlasticcaseTO-92(10D3) •Weightapprox.0.18g •PlasticmaterialhasULclassification94V-0 •Specialpackagingbulk

DiotecDIOTEC

德欧泰克

Diotec

EPITAXIALPLANARNPNTRANSISTOR

文件:343.79 Kbytes Page:2 Pages

KECKEC CORPORATION

KEC株式会社

KEC

SWITCHINGANDAMPLIFIERAPPLICATION

文件:177.48 Kbytes Page:3 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

BC338产品属性

  • 类型

    描述

  • 型号

    BC338

  • 功能描述

    两极晶体管 - BJT NPN 25V 800mA HFE/63

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    PNP 集电极—基极电压

  • VCBO

    集电极—发射极最大电压

  • VCEO

    - 40 V 发射极 - 基极电压

  • VEBO

    - 6 V

  • 增益带宽产品fT

    直流集电极/Base Gain hfe

  • Min

    100 A

  • 安装风格

    SMD/SMT

  • 封装/箱体

    PowerFLAT 2 x 2

更新时间:2024-4-26 14:54:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SANKEN
02+
TO92
4985
绝对低价现货!样品可售
HGF/恒光发
2022
TO-92
80000
原装现货,OEM渠道,欢迎咨询
KEC
ROHS
56520
一级代理 原装正品假一罚十价格优势长期供货
SANKEN
22+
TO92
12245
现货,原厂原装假一罚十!
Sanken/Sanken Electric Co Ltd.
21+
TO92
48
优势代理渠道,原装正品,可全系列订货开增值税票
CJ/长电
23+
TO-92
6000
长电旗舰店有售样品.3千种型号.3亿只现货
长电
2022+
TO92
7300
原装现货
SANKEN
21+
TO92
48
原装现货假一赔十
09+
TO-92
50000
GI
2000
4000
原装正品现货供应

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  • TAI-TECH
  • Winbond

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