您好,欢迎来到114ic资料网！

芯片资料
  • 芯片资料
  • 库存查询
  • 行业新闻
  • 生产厂家
  • 替换型号
  • 晶体管

位置：首页 > IC中文资料第5896页 > BAV10

BAV10价格

参考价格：￥0.2037

型号：BAV100 品牌：Taiwan Semi 备注：这里有BAV10多少钱，2024年最近7天走势，今日出价，今日竞价，BAV10批发/采购报价，BAV10行情走势销售排行榜，BAV10报价。
型号 功能描述 生产厂家&企业 LOGO 操作
BAV10

Small Signal Devices

SWITCHINGDIODES

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
BAV10

Small Signal Devices

SWITCHINGDIODES

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
BAV10

Small Signal Devices

SWITCHINGDIODES

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
BAV10

High-speed diode

DESCRIPTION TheBAV10isahigh-speedswitchingdiodefabricatedinplanartechnology,andencapsulatedinthehermeticallysealedleadedglassSOD27(DO-35)package. FEATURES •HermeticallysealedleadedglassSOD27(DO-35)package •Highswitchingspeed:max.6ns •Generalapplication •C

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BAV10

HIGH SPEED SWITCHING DIODE

FEATURES: •Highswitchingspeed:max.6ns •Generalapplication •Continuousreversevoltage:max.60V •Repetitivepeakreversevoltage:max.60V •Repetitivepeakforwardcurrent:max.600mA *Pb/RoHSFree

SYNSEMI

SynSemi，Inc.

SYNSEMI
BAV10

HIGH SPEED SWITCHING DIODE

文件：82.16 Kbytes Page：2 Pages

EIC

EIC

EIC
BAV100

Small Signal Diodes

Features •LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignates RoHSCompliant.Seeorderinginformation) ​​​​​​​•MoistureSensitivityLevel1 •SiliconEpitaxialPlanarDiodes •Thesediodesarealsoavailableinothercasestylesincluding:theDO-35case withthetypedesi

MCCMicro Commercial Components

美微科美微科半导体公司

MCC
BAV100

HIGH SPEED SILICON DIODES

HermeticallySealed,GlassSiliconDiodes IntendedforSwitchingandGeneralPurposesinIndustrialEquipmente.g.Oscilloscopes,DigitalVoltmetersandVideoOutputStagesinColourTelevision

CDIL

CDIL

CDIL
BAV100

Silicon Epitaxial Planar Diodes

Features •SiliconEpitaxialPlanarDiodes •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC Applications  •Generalpurposes

VishayVishay Siliconix

威世科技

Vishay
BAV100

Small Signal Diodes

FEATURES ♦SiliconEpitaxialPlanarDiodes ♦Forgeneralpurpose ♦Thesediodesarealsoavailableinother casestylesincluding:theDO-35casewith thetypedesignationsBAV19toBAV21,theSOD-123 casewiththetypedesignationsBAV19WtoBAV21W, andtheSOT-23casewiththe

GE

GE Industrial Company

GE
BAV100

Ultrafast Switching Surface Mount Si-Rectifiers

SuperfastRecoverySMDRectifierDiodes Features PackagecompatibletoSOD-87 Highpowerdissipation ComplianttoRoHS,REACH, ConflictMinerals1) TypicalApplications Rectificationofhigherfrequencies, Highspeedswitching Commercialgrade1) MechanicalData1)

DiotecDIOTEC

德欧泰克

Diotec
BAV100

Ultrafast silicon rectifier diodes

ForwardCurrent:0,2A ReverseVoltage:50to300V Features ●Max.soldertemperature:260°C ●PlasticmaterialhasULclassification94V-0 ●Onegreenringdenotescathodeandultrafastswitchingdevice ●Thetypenumbersarenotedonlyonthelableonthereel

SemikronSemikron

赛米控

Semikron
BAV100

SMALL SIGNAL SWITCHING DIODE

VOLTAGERANGE:50-200V CURRENT:250mA FEATURES ◇Siliconepitaxialplanardiode ◇Highspeedswitchingdiode ◇500mWpowerdissipation MECHANICALDATA ◇Case:MINI-MELF,glasscase ◇Polarity:Colorbanddenotescathode ◇Weight:Approx0.031grams

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

BILIN
BAV100

500mW Hermetically Sealed Glass High Voltage Switching Diodes

Features ●—HighVoltageSwitchingDevice —●MiniMelfpackage —●Surfacedevicetypemounting —●Hermeticallysealedglass —●Compressionbondedconstruction —●Allexternalsurfacearecorrosionresistantandleadsarereadilysolderable —●RoHScompliant —●MatteTin(Sn

TSCTaiwan Semiconductor Company, Ltd

台半 台湾半导体股份有限公司

TSC
BAV100

Small Signal Switching Diodes, High Voltage

Features •SiliconEpitaxialPlanarDiodes •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC Applications  •Generalpurposes

VishayVishay Siliconix

威世科技

Vishay
BAV100

HIGH SPEED SWITCHING DIODES

FEATURES: •Switchingspeed:max.50ns •Generalapplication •Continuousreversevoltage:max.50V,100V,150Vand200Vrespectively •Repetitivepeakreversevoltage:max.60V,120V,200Vand250Vrespectively •Repetitivepeakforwardcurrent:max.625mA. •Pb/RoH

SYNSEMI

SynSemi，Inc.

SYNSEMI
BAV100

General purpose diodes

DESCRIPTION TheBAV100toBAV103areswitchingdiodesfabricatedinplanartechnology,andencapsulatedinsmallhermeticallysealedglassSOD80CSMDpackages. FEATURES •SmallhermeticallysealedglassSMDpackage •Switchingspeed:max.50ns •Generalapplication •Continuou

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BAV100

HIGH SPEED SWITCHING DIODES

FEATURES: •Switchingspeed:max.50ns •Generalapplication •Continuousreversevoltage:max.50V,100V,150Vand200Vrespectively •Repetitivepeakreversevoltage:max.60V,120V,200Vand250Vrespectively •Repetitivepeakforwardcurrent:max.625mA. •Pb/RoH

EIC

EIC

EIC
BAV100

Small Signal Diodes

Features •LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignates RoHSCompliant.Seeorderinginformation) ​​​​​​​•MoistureSensitivityLevel1 •SiliconEpitaxialPlanarDiodes •Thesediodesarealsoavailableinothercasestylesincluding:theDO-35case withthetypedesi

MCCMicro Commercial Components

美微科美微科半导体公司

MCC
BAV100

Small Signal Switching Diodes, High Voltage

FEATURES •Siliconepitaxialplanardiode •Materialcategorization: fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912 APPLICATIONS •Generalpurposes

VishayVishay Siliconix

威世科技

Vishay
BAV100_V01

Small Signal Switching Diodes, High Voltage

FEATURES •Siliconepitaxialplanardiode •Materialcategorization: fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912 APPLICATIONS •Generalpurposes

VishayVishay Siliconix

威世科技

Vishay
BAV100-GS08

Small Signal Switching Diodes, High Voltage

Features •SiliconEpitaxialPlanarDiodes •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC Applications  •Generalpurposes

VishayVishay Siliconix

威世科技

Vishay
BAV100-GS18

Small Signal Switching Diodes, High Voltage

Features •SiliconEpitaxialPlanarDiodes •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC Applications  •Generalpurposes

VishayVishay Siliconix

威世科技

Vishay
BAV101

General purpose diodes

DESCRIPTION TheBAV100toBAV103areswitchingdiodesfabricatedinplanartechnology,andencapsulatedinsmallhermeticallysealedglassSOD80CSMDpackages. FEATURES •SmallhermeticallysealedglassSMDpackage •Switchingspeed:max.50ns •Generalapplication •Continuou

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BAV101

Silicon Epitaxial Planar Diodes

Features •SiliconEpitaxialPlanarDiodes •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC Applications  •Generalpurposes

VishayVishay Siliconix

威世科技

Vishay
BAV101

SURFACE MOUNT SWITCHING DIODE

Features ●Case:MiniMELF,Glass ●Terminals:SolderableperMIL-STD-202,Method208 ●Polarity:CathodeBand ●Marking:CathodeBandOnly ●Weight:0.05grams(approx.) MechanicalData ●FastSwitchingSpeed ●SurfaceMountPackageIdeallySuitedforAutomaticInsertion ●ForGeneralPur

DIODESDiodes Incorporated

达尔科技

DIODES
BAV101

Ultrafast Switching Surface Mount Si-Rectifiers

SuperfastRecoverySMDRectifierDiodes Features PackagecompatibletoSOD-87 Highpowerdissipation ComplianttoRoHS,REACH, ConflictMinerals1) TypicalApplications Rectificationofhigherfrequencies, Highspeedswitching Commercialgrade1) MechanicalData1)

DiotecDIOTEC

德欧泰克

Diotec
BAV101

Ultrafast silicon rectifier diodes

ForwardCurrent:0,2A ReverseVoltage:50to300V Features ●Max.soldertemperature:260°C ●PlasticmaterialhasULclassification94V-0 ●Onegreenringdenotescathodeandultrafastswitchingdevice ●Thetypenumbersarenotedonlyonthelableonthereel

SemikronSemikron

赛米控

Semikron
BAV101

HIGH VOLTAGE SURFACE MOUNT SWITCHING DIODES

VOLTAGE120to250VoltsPOWER300mWatts FEATURES •FastswitchingSpeed. •SurfaceMountPackageIdeallySuitedForAutomaticInsertion. •SiliconEpitaxalPlanarConstruction. •IncompliancewithEURoHS2002/95/ECdirectives

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PANJIT
BAV101

500mW Hermetically Sealed Glass High Voltage Switching Diodes

Features ●—HighVoltageSwitchingDevice —●MiniMelfpackage —●Surfacedevicetypemounting —●Hermeticallysealedglass —●Compressionbondedconstruction —●Allexternalsurfacearecorrosionresistantandleadsarereadilysolderable —●RoHScompliant —●MatteTin(Sn

TSCTaiwan Semiconductor Company, Ltd

台半 台湾半导体股份有限公司

TSC
BAV101

SMALL SIGNAL SWITCHING DIODE

VOLTAGERANGE:50-200V CURRENT:250mA FEATURES ◇Siliconepitaxialplanardiode ◇Highspeedswitchingdiode ◇500mWpowerdissipation MECHANICALDATA ◇Case:MINI-MELF,glasscase ◇Polarity:Colorbanddenotescathode ◇Weight:Approx0.031grams

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

BILIN
BAV101

Small Signal Switching Diodes, High Voltage

Features •SiliconEpitaxialPlanarDiodes •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC Applications  •Generalpurposes

VishayVishay Siliconix

威世科技

Vishay
BAV101

Small Signal Diodes

Features •LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignates RoHSCompliant.Seeorderinginformation) ​​​​​​​•MoistureSensitivityLevel1 •SiliconEpitaxialPlanarDiodes •Thesediodesarealsoavailableinothercasestylesincluding:theDO-35case withthetypedesi

MCCMicro Commercial Components

美微科美微科半导体公司

MCC
BAV101

SILICON EPITAXIAL PLANAR DIODES

SILICONEPITAXIALPLANARDIODES HighVoltageGeneralPurposeDiodes

SEMTECH_ELECSEMTECH ELECTRONICS LTD.

先之科半导体先之科半导体科技（东莞）有限公司

SEMTECH_ELEC
BAV101

HIGH SPEED SWITCHING DIODES

FEATURES: •Switchingspeed:max.50ns •Generalapplication •Continuousreversevoltage:max.50V,100V,150Vand200Vrespectively •Repetitivepeakreversevoltage:max.60V,120V,200Vand250Vrespectively •Repetitivepeakforwardcurrent:max.625mA. •Pb/RoH

EIC

EIC

EIC
BAV101

HIGH SPEED SILICON DIODES

HermeticallySealed,GlassSiliconDiodes IntendedforSwitchingandGeneralPurposesinIndustrialEquipmente.g.Oscilloscopes,DigitalVoltmetersandVideoOutputStagesinColourTelevision

CDIL

CDIL

CDIL
BAV101

Small Signal Diodes

FEATURES ♦SiliconEpitaxialPlanarDiodes ♦Forgeneralpurpose ♦Thesediodesarealsoavailableinother casestylesincluding:theDO-35casewith thetypedesignationsBAV19toBAV21,theSOD-123 casewiththetypedesignationsBAV19WtoBAV21W, andtheSOT-23casewiththe

GE

GE Industrial Company

GE
BAV101

HIGH SPEED SWITCHING DIODES

FEATURES: •Switchingspeed:max.50ns •Generalapplication •Continuousreversevoltage:max.50V,100V,150Vand200Vrespectively •Repetitivepeakreversevoltage:max.60V,120V,200Vand250Vrespectively •Repetitivepeakforwardcurrent:max.625mA. •Pb/RoH

SYNSEMI

SynSemi，Inc.

SYNSEMI
BAV101

SWITCHING DIODE

Features ·FastSwitchingSpeed ·SurfaceMountPackageIdeallySuitedfor AutomaticInsertion ·ForGeneralPurposeSwitchingApplications HighConductance

DAESAN

Daesan Electronics Corp.

DAESAN
BAV101-GS08

Small Signal Switching Diodes, High Voltage

Features •SiliconEpitaxialPlanarDiodes •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC Applications  •Generalpurposes

VishayVishay Siliconix

威世科技

Vishay
BAV101-GS18

Small Signal Switching Diodes, High Voltage

Features •SiliconEpitaxialPlanarDiodes •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC Applications  •Generalpurposes

VishayVishay Siliconix

威世科技

Vishay
BAV102

Single general-purpose switching diodes

Generaldescription Singlegeneral-purposeswitchingdiodes,fabricatedinplanartechnology,andencapsulatedinsmallhermeticallysealedglassSOD80CSurface-MountedDevice(SMD)packages. Features ●Highswitchingspeed:trr≤50ns ●Lowleakagecurrent ●Lowcapacitance:Cd

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BAV102

SMALL SIGNAL SWITCHING DIODE

VOLTAGERANGE:50-200V CURRENT:250mA FEATURES ◇Siliconepitaxialplanardiode ◇Highspeedswitchingdiode ◇500mWpowerdissipation MECHANICALDATA ◇Case:MINI-MELF,glasscase ◇Polarity:Colorbanddenotescathode ◇Weight:Approx0.031grams

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

BILIN
BAV102

500mW Hermetically Sealed Glass High Voltage Switching Diodes

Features ●—HighVoltageSwitchingDevice —●MiniMelfpackage —●Surfacedevicetypemounting —●Hermeticallysealedglass —●Compressionbondedconstruction —●Allexternalsurfacearecorrosionresistantandleadsarereadilysolderable —●RoHScompliant —●MatteTin(Sn

TSCTaiwan Semiconductor Company, Ltd

台半 台湾半导体股份有限公司

TSC
BAV102

SILICON EPITAXIAL PLANAR DIODES

SILICONEPITAXIALPLANARDIODES HighVoltageGeneralPurposeDiodes

SEMTECH_ELECSEMTECH ELECTRONICS LTD.

先之科半导体先之科半导体科技（东莞）有限公司

SEMTECH_ELEC
BAV102

HIGH SPEED SWITCHING DIODES

FEATURES: •Switchingspeed:max.50ns •Generalapplication •Continuousreversevoltage:max.50V,100V,150Vand200Vrespectively •Repetitivepeakreversevoltage:max.60V,120V,200Vand250Vrespectively •Repetitivepeakforwardcurrent:max.625mA. •Pb/RoH

SYNSEMI

SynSemi，Inc.

SYNSEMI
BAV102

General purpose diodes

DESCRIPTION TheBAV100toBAV103areswitchingdiodesfabricatedinplanartechnology,andencapsulatedinsmallhermeticallysealedglassSOD80CSMDpackages. FEATURES •SmallhermeticallysealedglassSMDpackage •Switchingspeed:max.50ns •Generalapplication •Continuou

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BAV102

Silicon Epitaxial Planar Diodes

Features •SiliconEpitaxialPlanarDiodes •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC Applications  •Generalpurposes

VishayVishay Siliconix

威世科技

Vishay
BAV102

High Voltage, General Purpose Diode

GeneralDescription: AGeneralPurposediodethatcoupleshighforwardconductancefastswitchingspeedandhighblockingvoltagesinaglassleadlessLL-34SurfaceMountpackage. PlacementoftheExpansionGaphasnorelationshiptothelocationoftheCathodeTerminalwhichisindicatedby

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
BAV102

Small Signal Diodes

FEATURES ♦SiliconEpitaxialPlanarDiodes ♦Forgeneralpurpose ♦Thesediodesarealsoavailableinother casestylesincluding:theDO-35casewith thetypedesignationsBAV19toBAV21,theSOD-123 casewiththetypedesignationsBAV19WtoBAV21W, andtheSOT-23casewiththe

GE

GE Industrial Company

GE
BAV102

Ultrafast Switching Surface Mount Si-Rectifiers

SuperfastRecoverySMDRectifierDiodes Features PackagecompatibletoSOD-87 Highpowerdissipation ComplianttoRoHS,REACH, ConflictMinerals1) TypicalApplications Rectificationofhigherfrequencies, Highspeedswitching Commercialgrade1) MechanicalData1)

DiotecDIOTEC

德欧泰克

Diotec
BAV102

Ultrafast silicon rectifier diodes

ForwardCurrent:0,2A ReverseVoltage:50to300V Features ●Max.soldertemperature:260°C ●PlasticmaterialhasULclassification94V-0 ●Onegreenringdenotescathodeandultrafastswitchingdevice ●Thetypenumbersarenotedonlyonthelableonthereel

SemikronSemikron

赛米控

Semikron
BAV102

HIGH VOLTAGE SURFACE MOUNT SWITCHING DIODES

VOLTAGE120to250VoltsPOWER300mWatts FEATURES •FastswitchingSpeed. •SurfaceMountPackageIdeallySuitedForAutomaticInsertion. •SiliconEpitaxalPlanarConstruction. •IncompliancewithEURoHS2002/95/ECdirectives

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PANJIT
BAV102

HIGH SPEED SWITCHING DIODES

FEATURES: •Switchingspeed:max.50ns •Generalapplication •Continuousreversevoltage:max.50V,100V,150Vand200Vrespectively •Repetitivepeakreversevoltage:max.60V,120V,200Vand250Vrespectively •Repetitivepeakforwardcurrent:max.625mA. •Pb/RoH

EIC

EIC

EIC
BAV102

Small Signal Diodes

Features •LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignates RoHSCompliant.Seeorderinginformation) ​​​​​​​•MoistureSensitivityLevel1 •SiliconEpitaxialPlanarDiodes •Thesediodesarealsoavailableinothercasestylesincluding:theDO-35case withthetypedesi

MCCMicro Commercial Components

美微科美微科半导体公司

MCC
BAV102

SURFACE MOUNT SWITCHING DIODE

Features ●Case:MiniMELF,Glass ●Terminals:SolderableperMIL-STD-202,Method208 ●Polarity:CathodeBand ●Marking:CathodeBandOnly ●Weight:0.05grams(approx.) MechanicalData ●FastSwitchingSpeed ●SurfaceMountPackageIdeallySuitedforAutomaticInsertion ●ForGeneralPur

DIODESDiodes Incorporated

达尔科技

DIODES
BAV102

Small Signal Switching Diodes, High Voltage

Features •SiliconEpitaxialPlanarDiodes •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC Applications  •Generalpurposes

VishayVishay Siliconix

威世科技

Vishay
BAV102

HIGH SPEED SILICON DIODES

HermeticallySealed,GlassSiliconDiodes IntendedforSwitchingandGeneralPurposesinIndustrialEquipmente.g.Oscilloscopes,DigitalVoltmetersandVideoOutputStagesinColourTelevision

CDIL

CDIL

CDIL
BAV102

Small Signal Switching Diodes, High Voltage

FEATURES •Siliconepitaxialplanardiode •Materialcategorization: fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912 APPLICATIONS •Generalpurposes

VishayVishay Siliconix

威世科技

Vishay
BAV102

SWITCHING DIODE

Features ·FastSwitchingSpeed ·SurfaceMountPackageIdeallySuitedfor AutomaticInsertion ·ForGeneralPurposeSwitchingApplications HighConductance

DAESAN

Daesan Electronics Corp.

DAESAN

BAV10产品属性

  • 类型

    描述

  • 型号

    BAV10

  • 制造商

    SYNSEMI

  • 制造商全称

    SYNSEMI

  • 功能描述

    HIGH SPEED SWITCHING DIODE

BAV10供应商更多...

更新时间：2024-4-26 18:10:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市振宏微科技有限公司
BAV10
SMD
23+
NA
15659
振宏微专业只做正品,假一罚百!
询价
深圳市环球伟业电子有限公司
BAV100-GS08
VISHAY/威世
LL34
50000
优势代理渠道,原装正品,可全系列订货开增值税票
询价
深圳市明嘉莱科技有限公司
BAV103
NEXPERIA B.V.
23+
SMD
918000
明嘉莱只做原装正品现货
询价
深圳市航润创能电子集团有限公司
BAV1030GS08
VISHAY/威世
21+
NA
152500
只做原装,假一罚十
询价
深圳市蓝山航业科技有限公司
BAV100
ph
22+
500000
行业低价,代理渠道
询价
深圳市胜彬电子有限公司
BAV100-GS08
TEL
22+
LL34
8000
原装正品支持实单
询价
深圳市坤融电子科技有限公司
BAV102-GS08
VISHAY/威世
22+
234457
只做原装进口 免费送样!!
询价
深圳市特顺芯科技有限公司
BAV100
VISHAY
2008++
LL-34SOD-80
6200
新进库存/原装
询价
瀚佳科技(深圳)有限公司
BAV103-GS08
VISHAY
18+
1206
9800
一级代理/全新原装现货/长期供应!
询价
深圳市拓亿芯电子有限公司
BAV103
VISHAY/威世
23+
LL34
15000
代理原装现货,价格优势
询价

BAV10芯片相关品牌

  • ANACHIP
  • BOTHHAND
  • EUROQUARTZ
  • Honeywell
  • MOLEX8
  • MPS
  • nichicon
  • nxp
  • POWERBOX
  • RECTRON
  • TAI-TECH
  • Winbond

BAV10规格书下载地址

BAV10参数引脚图相关

BAV10数据表相关新闻

DdatasheetPDF页码索引

新数据|IC资料索引|IC关键词|IC库存|IC中文资料|关于我们|联系我们

Copyright © 2003-2024 www.114ic.cn All Rights Reserved 网站备案: 粤ICP备05011613号 粤公网安备 44030402000933号

声明：本站所有资料均来自互联网及网友提供，仅供学习和研究使用，无任何商业目的，版权归原作如有侵权请联系QQ：303638005，本站马上更正

字母索引：ABCDEFGHIJKLMNOPQRSTUVWXYZ0123456789

深圳市市场监督管理局企业主体身份公示