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APT1002价格
参考价格：￥418.1124
型号：APT10021JFLL 品牌：Microsemi 备注：这里有APT1002多少钱，2024年最近7天走势，今日出价，今日竞价，APT1002批发/采购报价，APT1002行情走势销售排行榜，APT1002报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
PowerMOS7isanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS. PowerMOS7®isanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.BothconductionandswitchinglossesareaddressedwithPowerMOS7®bysignificantlyloweringRDS(ON)andQg.PowerMOS7®combineslowerconductionandswitchinglossesalongwithexceptionally | ADPOW Advanced Power Technology |  |   | |
PowerMOS7isanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS. PowerMOS7®isanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.BothconductionandswitchinglossesareaddressedwithPowerMOS7®bysignificantlyloweringRDS(ON)andQg.PowerMOS7®combineslowerconductionandswitchinglossesalongwithexceptionally | ADPOW Advanced Power Technology | | | |
PowerMOSVITMisanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs PowerMOSVITMisanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs.LowergatechargeisachievedbyoptimizingthemanufacturingprocesstominimizeCissandCrss.LowergatechargecoupledwithPowerMOSVITMoptimizedgatelayout,deliversexceptionally | ADPOW Advanced Power Technology | | | |
PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •FastRecoveryBody | ADPOW Advanced Power Technology | | | |
PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •FasterSwitching | ADPOW Advanced Power Technology | | | |
N-ChannelMOSFET DESCRIPTION ·DrainCurrent-ID=34A@TC=25℃ ·DrainSourceVoltage -VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.25Ω(Max)@VGS=10V APPLICATIONS ·DC-DCconverter ·Highspeedpowerswitch | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •FasterSwitching | ADPOW Advanced Power Technology | | | |
PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS. PowerMOS7®isanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.BothconductionandswitchinglossesareaddressedwithPowerMOS7®bysignificantlyloweringRDS(ON)andQg.PowerMOS7®combineslowerconductionandswitchinglossesalongwithexceptionally | ADPOW Advanced Power Technology | | | |
N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS POWERMOSIVSINGLEDIEISOTOP®PACKAGE N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS | ADPOW Advanced Power Technology | | | |
PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS. PowerMOS7®isanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.BothconductionandswitchinglossesareaddressedwithPowerMOS7®bysignificantlyloweringRDS(ON)andQg.PowerMOS7®combineslowerconductionandswitchinglossesalongwithexceptionallyf | ADPOW Advanced Power Technology | | | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=38A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.26Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS. PowerMOS7®isanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.BothconductionandswitchinglossesareaddressedwithPowerMOS7®bysignificantlyloweringRDS(ON)andQg.PowerMOS7®combineslowerconductionandswitchinglossesalongwithexceptionally | ADPOW Advanced Power Technology | | | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=5.5A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS POWERMOSIV® N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS | ADPOW Advanced Power Technology | | | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=6.5A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=5A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=6A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS POWERMOSIV® N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS | ADPOW Advanced Power Technology | | | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=7A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS POWERMOSIV™ N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS | ADPOW Advanced Power Technology | | | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=5.5A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=7A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
PowerMOS7isanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS. 文件：155.78 Kbytes Page：5 Pages | ADPOW Advanced Power Technology | | | |
PowerMOS7isanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS. 文件：155.78 Kbytes Page：5 Pages | ADPOW Advanced Power Technology | | | |
PowerMOS7isanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS. 文件：155 Kbytes Page：5 Pages | ADPOW Advanced Power Technology | | | |
PowerMOS7isanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS. 文件：155 Kbytes Page：5 Pages | ADPOW Advanced Power Technology | | | |
PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. 文件：70.81 Kbytes Page：4 Pages | ADPOW Advanced Power Technology | | | |
PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. 文件：70.81 Kbytes Page：4 Pages | ADPOW Advanced Power Technology | | | |
PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS. 文件：111.52 Kbytes Page：5 Pages | ADPOW Advanced Power Technology | | | |
PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS. 文件：71.49 Kbytes Page：2 Pages | ADPOW Advanced Power Technology | | | |
PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS. 文件：111.52 Kbytes Page：5 Pages | ADPOW Advanced Power Technology | | | |
PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS. 文件：111.12 Kbytes Page：5 Pages | ADPOW Advanced Power Technology | | | |
PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS. 文件：111.12 Kbytes Page：5 Pages | ADPOW Advanced Power Technology | | | |
PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS. 文件：105.47 Kbytes Page：5 Pages | ADPOW Advanced Power Technology | | | |
PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS. 文件：105.47 Kbytes Page：5 Pages | ADPOW Advanced Power Technology | | | |
PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS. 文件：104.77 Kbytes Page：5 Pages | ADPOW Advanced Power Technology | | | |
PowerMOS7isanewgenerationoflowloss,highvoltage,N-Channel 文件：105.61 Kbytes Page：5 Pages | MicrosemiMicrosemi Corporation 美高森美美高森美公司 |  | | |
PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS. 文件：104.77 Kbytes Page：5 Pages | ADPOW Advanced Power Technology | | | |
PowerMOS7isanewgenerationoflowloss,highvoltage,N-Channel 文件：105.61 Kbytes Page：5 Pages | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
PulseTransformers DESCRIPTION The1000seriesareintendedforwidebandandpulseoperations.Theyarealsosuitableforsignalisolationandsmallisolatedpowersupplies.Thecompactfootprintmakesthemidealforapplicationswherespaceisatapremium. FEATURES ■UL94V-0PackageMaterial ■Isolationto2k | CANDD C&D Technologies |  | | |
WILMAR??ProtectiveRelays-1000Series Phasefailurerelaysprotectmotors,equipmentandpersonnelfromdamageorinjurycausedbyopenphase,reversedphasesequence,orlowvoltageinathreephasesystem.Modelsareavailablefor50and60Hzwithvoltagesupto575volts.Motorcontrolswitchboardsareacommonapplication. Opera | MACOM Tyco Electronics |  | | |
Dual1.2MHz,800mASynchronousStep-DownConverter DESCRIPTION TheMP2109containstwoindependent1.2MHzconstantfrequency,currentmode,PWMstep-downconverters.EachconverterintegratesamainswitchandasynchronousrectifierforhighefficiencywithoutanexternalSchottkydiode.TheMP2109isidealforpoweringportableequipmentthatr | MPSMonolithic Power Systems Inc. 美国芯源美国芯源系统有限公司 |  | | |
PulseTransformers 文件：109.19 Kbytes Page：2 Pages | MuRataMurata Manufacturing Co., Ltd. 村田村田制作所 |  | | |
2Watts,35VoltsPulsedAvionicsat960-1215MHz 文件：179.08 Kbytes Page：2 Pages | ADPOW Advanced Power Technology | | |
APT1002产品属性
- 类型
描述
- 型号
APT1002
- 功能描述
TRANSISTOR | MOSFET POWER MODULE | HALF BRIDGE | 1KV V(BR)DSS | 40A I(D)
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
APT |
23+ |
TO247 |
7676 |
原装正品,假一罚十! |
|||
APT |
24+ |
TO264 |
58000 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
APT |
18+ |
TO-3PL |
2050 |
公司大量全新原装 正品 随时可以发货 |
|||
MICROCHIP(美国微芯) |
23+ |
TO2643(TO264AA) |
6000 |
||||
APT |
21+ |
TO-264 |
343 |
原装现货假一赔十 |
|||
APT |
23+ |
TO-264 |
90000 |
只做原装 全系列供应 价格优势 可开增票 |
|||
APT |
TO247 |
68900 |
原包原标签100%进口原装常备现货! |
||||
APT |
08+(pbfree) |
8866 |
|||||
APT |
24+25+/26+27+ |
TO-264 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
APT |
22+ |
原厂原封 |
8200 |
原装现货库存.价格优势!! |
APT1002芯片相关品牌
APT1002规格书下载地址
APT1002参数引脚图相关
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- APS3605
APT1002数据表相关新闻
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2023-2-1APT32F101H6S6
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